Untitled
Abstract: No abstract text available
Text: \| CHNEM ippon f AMORPHOUS CHOKE COIL I-CON| Refe rence sa m p le ^ Di D?: Maximum outer diameter W : Maximum width Total lead length (L )*: 30mm (+3mm, -3mm) Soldering boundary ( a ) ': 0mm (+4mm -omm) 'T he bottom of the core or coil (v)is defined as the base surface.
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p-15T
15502M
F372315M
20102MR
15102M
15302M
30102M
30202M
E1008A
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NIPPON CAPACITORS
Abstract: SM6104 SM6104P SM6104P1 SM6104S SM6104S1
Text: f\JPC SM6104 6-BIT FLASH A/D CONVERTER N IPPON PREC ISION C IR C UITS INC. • OVERVIEW The SM6104 is a 6-bit flash parallel A/D converter based on NPC's proprietary molybedenum gate CMOS technology. It features a high-speed conversion of 20 Msps, and a low current consumption of
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SM6104
SM6104
18-pin
NIPPON CAPACITORS
SM6104P
SM6104P1
SM6104S
SM6104S1
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YM3623B
Abstract: Nippon Gakki 2000P
Text: YAMAHAL o i YM 3623B D ig ita l Audio I n t e r f a c e Receiver DIR • o u t l in e The YM3623B is an LSI device, developed by N ippon G akki, which receives and plays back the Digital Audio Interface Form at signals that are transferred between digital audio equipment.
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YM3623B
YM3623B
4700P
2K-1219
Nippon Gakki
2000P
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Nippon sxe
Abstract: NFC15-48S05 NFC15-48D15 Nippon Chemi-Con sxe capacitor NFC15-48D12 NFC15 VDE0805
Text: ARTESON T E C H N O L O W G I NFC15 SERIES E Single and dual output S • • • • • • • • The NFC15 series o f DC/DC converters are economical 15 Watt, high efficiency, hybrid DC/DC converters that accept input voltages ranging from 20VDC to 72VDC. A constant efficiency of 80% is maintained over the entire input voltage
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NFC15
20VDC
72VDC.
VDE0805/EN60950/IEC950
UL1950
E136005
LR41062C
Nippon sxe
NFC15-48S05
NFC15-48D15
Nippon Chemi-Con sxe capacitor
NFC15-48D12
VDE0805
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Untitled
Abstract: No abstract text available
Text: HN62454BN Series 262144-word x 16-bit CMOS Mask Programmable ROM HITACHI ADE-203-470A Z Rev. 1.0 May. 21, 1996 Description The HN62454BN is a 262144 words by 16 bits CMOS Mask Programmable ROM, featuring page access mode to get very high speed 4-word serial access. A high speed access of 85/100 ns (max) and page
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HN62454BN
262144-word
16-bit
ADE-203-470A
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SK2568 Silicon N-Channel MOS FET HITACHI Preliminary November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • Suitable for switching regulator and DC-DC converter Outline Flange
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2SK2568
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Untitled
Abstract: No abstract text available
Text: 2SK2426 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC-DC converter. Outline
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2SK2426
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Untitled
Abstract: No abstract text available
Text: HVC375B Variable Capacitance Diode for VCO HITACHI ADE-208-625 Z Rev.O Feb. 1, 1999 Features • Low tolerance. • Low series resistance. (rs= l.li2 max) • Good C-V linearity. • Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information
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HVC375B
ADE-208-625
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tc8835
Abstract: No abstract text available
Text: TC8807N/F-0900-1 TOSHIBA 1. ü02mim 133 «tosb • UC/UP bME D GENERAL T C 8807N /I’-0900 is a stan d ard tPARCOR voice synthesis LSI for T elephone A nsw ering m achines and Voice Clock using the E nglish m ale voice. The software of in te rn a l 4b it CPU (TMP42C70) has
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TC8807N/F-0900-1
8807N
TMP42C70)
tTC8835N/F
TC8807N
TC8835
TC8835N/F
IITC8807N/F-0900-23
10172m
002mm
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PJ37
Abstract: motorola assembler L2N3904 00FF M146805 M6805 M68HC05 MC68HC05 Nippon capacitors MC68HC05P8
Text: MC68HC05P8/D MC68HC05P8 TECHNICAL DATA M MOTOROLA MC68HC05P8 HCMOS MICROCONTROLLER UNIT Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Motorola does not assume any liability arising out of
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MC68HC05P8/D
MC68HC05P8
MC68HC05P8
A26575
PJ37
motorola assembler
L2N3904
00FF
M146805
M6805
M68HC05
MC68HC05
Nippon capacitors
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Untitled
Abstract: No abstract text available
Text: Order this data sheet by LM2935T/D MOTOROLA SEMICONDUCTOR LM2935T TECHNICAL DATA P r o d u c t P re v ie w LOW DROPOUT DUAL REGULATOR LOW DROPOUT DUAL REGULATOR SILICON MONOLITHIC INTEGRATED CIRCUIT The LM 2935 is a dual positive 5.0 volt low dropout voltage
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LM2935T/D
LM2935T
2935T
C68066
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Untitled
Abstract: No abstract text available
Text: 2SK2425 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC-DC converter. Outline
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2SK2425
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Untitled
Abstract: No abstract text available
Text: HN62454B Series 262144-word x 16-bit CMOS Mask Programmable ROM HITACHI ADE-203-471A Z Rev. 1.0 May. 10, 1996 Description The HN62454B is a 262144 words by 16 bits CMOS Mask Programmable ROM. A high speed access of 85/100 ns (max) is the most suitable to the system using a high speed micro-computer by 16 bits.
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HN62454B
262144-word
16-bit
ADE-203-471A
HN27C4096G/CC/CP)
HN62454BP-85
HN62454BP-10
HN62454BCP-85
HN62454BGP-10
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1M x 16 16-MBIT DYNAMIC RAM WITH EDO PAGE MODE
Abstract: No abstract text available
Text: HB56HW164DB Series, HB56HW165DB Series 1,048,576-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-699B Z Rev.2.0 Jun. 5, 1997 Description The HB56HW164DB is a 1M x 64 dynamic RAM Small Outline Dual In-line Memory Module (S.O.DIMM), mounted 4 pieces of 16-Mbit DRAM (HM51W16165) sealed in TSOP package and 1 pieces
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HB56HW164DB
HB56HW165DB
576-word
64-bit
ADE-203-699B
16-Mbit
HM51W16165)
24C02)
1M x 16 16-MBIT DYNAMIC RAM WITH EDO PAGE MODE
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HAT1046R
Abstract: No abstract text available
Text: HAT1046R Silicon P Channel Power MOS FET Power Switching HITACHI 2nd. Edition January 1999 Features • Low on-resistance • R Ds onr 3 0 m ii t o ( at v g s = -4V C apable o f -4 V gate drive • Low drive current • H igh density m ounting Outline SOP-8
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HAT1046R
HAT1046R
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Hitachi PF0030
Abstract: No abstract text available
Text: PF0030 Series MOS FET Power Amplifier HITACHI Features • High stability: Load VSWR = 20 : 1 • Low power control current: 400 jlA • Thin package: 5 mmt Ordering Information Type No Operating Frequency A pplica tio n PF0030 824 to 849 MHz AMPS PF0032 872 to 905 MHz
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PF0030
ADE-208-460
PF0032
D-85622
Hitachi PF0030
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Untitled
Abstract: No abstract text available
Text: 2SC2613 K Silicon NPN Triple Diffused HITACHI Application High voltage, high speed and high power switching Outline TO -220AB 2. Collector (Flange) 3. Em itter 2 o Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Ratings Unit Collector to base voltage VCB0
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2SC2613
-220AB
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lvt74
Abstract: No abstract text available
Text: HB56AW873E Series 8,388,608-word x 72-bit High Density Dynamic RAM Module 168-pin JEDEC Standard Outline Buffered 8 byte DIMM HITACHI ADE-203-685A Z Rev. 1.0 Nov. 28, 1996 Description The HB56AW873E belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been
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HB56AW873E
608-word
72-bit
168-pin
ADE-203-685A
64-Mbit
HM5165800ATT)
16-bit
lvt74
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PDF
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Untitled
Abstract: No abstract text available
Text: HM5118160BI Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-580A Z Rev. 1.0 May. 20, 1996 Description The Hitachi HM5118160BI is a CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5118160BI offers
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HM5118160BI
1048576-word
16-bit
ADE-203-580A
576-word
16-bit.
ns/70
ns/80
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Untitled
Abstract: No abstract text available
Text: H B 56S872E S N -6B /7B /8B 8,388,608-word x 72-bit High Density Dynamic RAM Module 168-pin JEDEC Standard Outline Unbuffered 8 byte DIMM HITACHI ADE-203-611 Z Preliminary Rev. 0.0 Jun. 14, 1996 Description The HB56S872ESN belongs to 8 Byte DIMM (Dual In-line Memory M odule) fam ily, and has been
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56S872E
608-word
72-bit
168-pin
ADE-203-611
HB56S872ESN
B56S872ESN
24C02)
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order th is docum ent by MC74LCX244/D SEMICONDUCTOR TECHNICAL DATA Low -Voltage CMOS O ctal Buffer M C74LCX244 With 5V -Tolerant Inputs and Outputs 3 -S ta te , N on-Inverting LCX The MC74LCX244 is a high performance, non-inverting octal buffer
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MC74LCX244/D
MC74LCX244
3PHX32175--
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Untitled
Abstract: No abstract text available
Text: M O r O H O L A MC54/74F125 MC54/74F126 3-STATE QUAD BUFFERS • High Impedance NPN Base Inputs for Reduced Loading QUAD BUFFERS, 3-STATE FAST SHOTTKY TTL MC54/74F125 VCC 40 4A 4Y 30 3A 3Y 14 13 12 11 10 9 8 J SUFFIX CERAMIC CASE 632-08 14 1 2 1C 1A 3 4
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MC54/74F125
MC54/74F126
MC54/74F125
MC54/74F126
51A-02
MC54FXXXJ
MC74FXXXN
MC74FXXXD
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SK2174 L , 2SK2174(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • No Secondary Breakdown • Suitable for Switching regulator, DC-DC converter Outline 2SK2174(L), 2SK2174(S)
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2SK2174
D-85622
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Untitled
Abstract: No abstract text available
Text: 2SK3141 Silicon N Channel MOS FET High Speed Power Switching HITACHI ADE-208-680B Z 3rd. Edition February 1999 Features • Low on-resistance • • R DS(on) = 4 m ii typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline Absolute Maximum Ratings (Ta = 25 °C)
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2SK3141
ADE-208-680B
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