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    Infineon Technologies AG IPP26CN10NGHKSA1

    MOSFET N-CH 100V 35A TO220-3
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    IPP26CN10N G Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IPP26CN10N G Infineon Technologies N-Channel MOSFETs (20V - 250V); Package: PG-TO220-3; Package: TO-220; VDS (max): 100.0 V; RDS (on) (max) (@10V): 26.0 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 35.0 A; Original PDF
    IPP26CN10NG Infineon Technologies Transistor Mosfet N-CH 100V 35A 3PG-TO220-3 Original PDF
    IPP26CN10NGHKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 35A TO-220 Original PDF

    IPP26CN10N G Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) • Very low on-resistance R DS(on) VDS 100 V RDS(on),max (TO252) 25 mW


    Original     		IPB26CN10N IPD25CN10N IPI26CN10N IPP26CN10N IEC61249-2-21 PG-TO263-3 PDF

    26CN10N

    Abstract: IPB26CN10NG IPI26CN10NG IPP26CN10NG PG-TO220-3 IPB26CN10N IPI26CN10N IPP26CN10N
    Text: IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)


    Original     		IPB26CN10N IPD25CN10N IPI26CN10N IPP26CN10N PG-TO263-3 PG-TO252-3 26CN10N IPB26CN10NG IPI26CN10NG IPP26CN10NG PG-TO220-3 PDF

    25CN10N

    Abstract: IPB26CN10NG IPI26CN10NG IPP26CN10NG
    Text: IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G IPU25CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)


    Original     		IPB26CN10N IPD25CN10N IPI26CN10N IPP26CN10N IPU25CN10N 25CN10N IPB26CN10NG IPI26CN10NG IPP26CN10NG PDF

    IPB26CN10NG

    Abstract: IPI26CN10NG IPP26CN10NG
    Text: IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G IPU25CN10N G OptiMOS 2 Power-Transistor Product Summary Features V DS 100 V • N-channel, normal level R DS on ,max (TO252) 25 m: ID 35 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)


    Original     		IPB26CN10N IPD25CN10N IPI26CN10N IPP26CN10N IPU25CN10N IPB26CN10NG IPI26CN10NG IPP26CN10NG PDF

    25CN10N

    Abstract: 26CN10N IPB26CN10N IPU25CN10N IPB26CN10NG IPI26CN10NG IPP26CN10NG IPD25CN10N G IPI26CN10N IPP26CN10N
    Text: IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G IPU25CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)


    Original     		IPB26CN10N IPD25CN10N IPI26CN10N IPP26CN10N IPU25CN10N 25CN10N 26CN10N IPB26CN10NG IPI26CN10NG IPP26CN10NG IPD25CN10N G PDF

    IPB26CN10NG

    Abstract: IPI26CN10NG IPP26CN10NG IEC61249-2-21 IPB26CN10N IPI26CN10N IPP26CN10N ds 1-08 diode
    Text: IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)


    Original     		IPB26CN10N IPD25CN10N IPI26CN10N IPP26CN10N IEC61249-2-21 PG-TO263-3 IPB26CN10NG IPI26CN10NG IPP26CN10NG IEC61249-2-21 ds 1-08 diode PDF

    26CN10N

    Abstract: IPB26CN10NG IPI26CN10NG IPP26CN10NG IPB26CN10N IPI26CN10N IPP26CN10N PG-TO220-3
    Text: IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)


    Original     		IPB26CN10N IPD25CN10N IPI26CN10N IPP26CN10N PG-TO263-3 PG-TO252-3 26CN10N IPB26CN10NG IPI26CN10NG IPP26CN10NG PG-TO220-3 PDF

    26CN10N

    Abstract: IPB26CN10NG IPI26CN10NG IPP26CN10NG 25CN10N IPB26CN10N IPI26CN10N IPP26CN10N IPU25CN10N IPP26CN10N G
    Text: IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G IPU25CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)


    Original     		IPB26CN10N IPD25CN10N IPI26CN10N IPP26CN10N IPU25CN10N 26CN10N IPB26CN10NG IPI26CN10NG IPP26CN10NG 25CN10N IPP26CN10N G PDF

    S 170 MOSFET TRANSISTOR

    Abstract: 8203 dual mosfet S 170 MOSFET SOT323 MOSFET P MOSFET SWITCHING FREQUENCY IPS09N03LA P-channel power mosfet SO-8 TDA21102 mosfet all mosfet equivalent book
    Text: Low Voltage ICs – Discretes: OptiMOS , OptiMOS ®2 Power Management & Supply DC/DC Selection Guide www.infineon.com/power May 2006 Introduction D C / D C C O N V E R S I O N plays a critical role in today’s applications such as desktop and notebook computers, consumer equipment, e.g. DVD players and


    Original     		B152-H8203-G4-X-7600 S 170 MOSFET TRANSISTOR 8203 dual mosfet S 170 MOSFET SOT323 MOSFET P MOSFET SWITCHING FREQUENCY IPS09N03LA P-channel power mosfet SO-8 TDA21102 mosfet all mosfet equivalent book PDF

    ICE3B0365J

    Abstract: ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP
    Text: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Pocket Guide www.infineon.com/powermanagement N-Channel MOSFETs 500V … 900V CoolMOSTM Partnumber RDS on , ID, Qg(typ)


    Original     		SPP21N50C3 SPA21N50C3 SPI21N50C3 SPP16N50C3 SPA16N50C3 SPI16N50C3 SPW21N50C3 SPP12N50C3 SPA12N50C3 SPI12N50C3 ICE3B0365J ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP PDF

    3bs02

    Abstract: 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J
    Text: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Selection Guide www.infineon.com/powermanagement Introduction I n f i n e o n ’ s P o w e r S e mi c o n d u c t o r p h i l o s o p h y is rather


    Original     		Infineo866-95 B152-H8926-G2-X-7600 NB08-1069 3bs02 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J PDF

    PX3544

    Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
    Text: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly


    Original     		lead519 B152-H9345-G2-X-7600 PX3544 PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J PDF

    600V igbt dc to dc buck converter

    Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635
    Text: Infineon Product Catalog for Distribution 2008 Infineon Product Catalog for Distribution 2008 Product Catalog for Distribution Ordering No. B192-H6780-G11-X-7600 Published by Infineon Technologies AG [ www.infineon.com ] [ www.infineon.com/distribution ]


    Original     		B192-H6780-G11-X-7600 SP000008186 VDSL6100i-E 600V igbt dc to dc buck converter TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635 PDF