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    057N08N

    Abstract: 054N08N ipp06cn08n IEC61249-2-21 PG-TO220-3 IPB054N08N3 G
    Text: IPP057N08N3 G IPI057N08N3 G IPB054N08N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) • Very low on-resistance R DS(on) V DS 80 V R DS(on),max (SMD) 5.4 mΩ ID 80 A


    Original     		PDF IPP057N08N3 IPI057N08N3 IPB054N08N3 IPP06CN08N IEC61249-2-21 PG-TO220-3 PG-TO262-3 057N08N 054N08N ipp06cn08n IEC61249-2-21 PG-TO220-3 IPB054N08N3 G

    057N08N

    Abstract: 054n08n DSV80 IPB054N08N3-G ipp06cn08n PG-TO220-3 IPP057N08N3 G IPP057N08N3
    Text: IPP057N08N3 G IPI057N08N3 G IPB054N08N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 80 V R DS(on),max (SMD) 5.4 mΩ ID 80 A • Very low on-resistance R DS(on)


    Original     		PDF IPP057N08N3 IPI057N08N3 IPB054N08N3 IPP06CN08N PG-TO220-3 PG-TO262-3 PG-TO263-3 057N08N 054n08n DSV80 IPB054N08N3-G ipp06cn08n PG-TO220-3 IPP057N08N3 G