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    IPI06 Search Results

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    IPI06 Price and Stock

    Infineon Technologies AG IPI06N03LA

    MOSFET N-CH 25V 50A TO262-3
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    DigiKey IPI06N03LA Tube
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    Infineon Technologies AG IPI06CN10N G

    MOSFET N-CH 100V 100A TO262-3
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    DigiKey IPI06CN10N G Tube 500
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    Leopard Imaging LI-AR1335C-MIPI-061H-AF

    (Alt: LI-AR1335C-MIPI-06)
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    Avnet Americas LI-AR1335C-MIPI-061H-AF 1
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    Mouser Electronics LI-AR1335C-MIPI-061H-AF 1
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    IPI06 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IPI06CN10NG Infineon Technologies OptiMOS 2 Power-Transistor Original PDF
    IPI06CN10NG Infineon Technologies FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 100A TO262-3 Original PDF
    IPI06CN10N G Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 100A TO262-3 Original PDF
    IPI06CNE8NG Infineon Technologies OptiMOS 2 Power-Transistor Original PDF
    IPI06N03LA Infineon Technologies OptiMOS2 Power-Transistor Original PDF
    IPI06N03LA Infineon Technologies OptiMOS 2 Power-Transistor Original PDF

    IPI06 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    J 6920 A

    Abstract: J 6920 06CN10N IPP06CN10N JESD22 PG-TO220-3
    Text: IPB06CN10N G IPI06CN10N G IPP06CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		PDF IPB06CN10N IPI06CN10N IPP06CN10N PG-TO263-3 PG-TO262-3 PG-TO220-3 06CN10N J 6920 A J 6920 06CN10N JESD22 PG-TO220-3

    06CNE8N

    Abstract: No abstract text available
    Text: IPB06CNE8N G IPI06CNE8N G IPP06CNE8N G OptiMOS 2 Power-Transistor Product Summary Features V DS 85 V • N-channel, normal level R DS on ,max (TO263) 6.2 m: ID 100 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		PDF IPB06CNE8N IPI06CNE8N IPP06CNE8N PG-TO263-3 06CNE8N PG-TO262-3 06CNE8N

    IEC61249-2-21

    Abstract: IPP06CNE8N JESD22 PG-TO220-3
    Text: IPB06CNE8N G IPI06CNE8N G IPP06CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		PDF IPB06CNE8N IPI06CNE8N IPP06CNE8N IEC61249-2-21 PG-TO263-3 PG-TO262-3 PG-TO220-3 IEC61249-2-21 JESD22 PG-TO220-3

    06cn10n

    Abstract: J 6920 A J 6920 mJ 6920 IPP06CN10N JESD22 PG-TO220-3 IPP06CN10NG
    Text: IPB06CN10N G IPI06CN10N G IPP06CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		PDF IPB06CN10N IPI06CN10N IPP06CN10N PG-TO263-3 PG-TO262-3 PG-TO220-3 06CN10N 06cn10n J 6920 A J 6920 mJ 6920 JESD22 PG-TO220-3 IPP06CN10NG

    marking 9D

    Abstract: sd marking 8H IPP06CN10N PG-TO220-3 A6c DIODE
    Text: IPB06CN10N G IPI06CN10N G IPP06CN10N G "%&$!"# 2 Power-Transistor Product Summary Features R 492 ?6= ?@ C>2 =6G6= R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E! '  V ;I )( K R  - @ ?>2 I.)     .&* Z" I; )( 7 R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[#


    Original     		PDF IPB06CN10N IPI06CN10N IPP06CN10N 8976BF6 marking 9D sd marking 8H PG-TO220-3 A6c DIODE

    06n03la

    Abstract: IPB06N03LA Q67042-S4146 IPP06N03LA 06N03L
    Text: Preliminary data OptiMOSâ 2 Power-Transistor IPI06N03LA IPP06N03LA,IPB06N03LA Product Summary Feature Ideal for high-frequency dc/dc converters  N-Channel  Logic Level  Excellent Gate Charge x RDS on product (FOM)  Very low on-resistance RDS(on) P- TO262 -3-1


    Original     		PDF IPI06N03LA IPP06N03LA IPB06N03LA IPB06N03LA 06N03LA 06N03LA Q67042-S4148 Q67042-S4146 06N03L

    06cn10n

    Abstract: 06cn10 DIODE D180 06CN IPI06CN10NG DIODE D100 to220
    Text: IPB06CN10N G IPI06CN10N G IPP06CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		PDF IPB06CN10N IPI06CN10N IPP06CN10N PG-TO263-3 06CN10N PG-TO262-3 06cn10n 06cn10 DIODE D180 06CN IPI06CN10NG DIODE D100 to220

    06N03LA

    Abstract: IPB06N03LA IPI06N03LA IPP06N03LA
    Text: IPB06N03LA IPI06N03LA, IPP06N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max (SMD version) 5.9 mΩ ID 50 A • Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPB06N03LA IPI06N03LA, IPP06N03LA P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 Q67042-S4146 06N03LA 06N03LA IPB06N03LA IPI06N03LA IPP06N03LA

    IPP06CNE8N

    Abstract: JESD22 PG-TO220-3
    Text: IPB06CNE8N G IPI06CNE8N G IPP06CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		PDF IPB06CNE8N IPI06CNE8N IPP06CNE8N PG-TO263-3 PG-TO262-3 PG-TO220-3 06CNE8N JESD22 PG-TO220-3

    06N03LA

    Abstract: IPI06N03LA 06N03LA equivalent IPP06N03LA JESD22
    Text: IPI06N03LA, IPP06N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max 6.2 mΩ ID 50 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPI06N03LA, IPP06N03LA PG-TO262-3-1 PG-TO220-3-1 IPI06N03LA 06N03LA PG-TO200-3-1 06N03LA IPI06N03LA 06N03LA equivalent IPP06N03LA JESD22

    Untitled

    Abstract: No abstract text available
    Text: IPI06N03LA, IPP06N03LA OptiMOS 2 Power-Transistor Product Summary Features V DS 25 V • Ideal for high-frequency dc/dc converters R DS on ,max 6.2 m: ID 50 A • Qualified according to JEDEC1) for target applications • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPI06N03LA, IPP06N03LA PG-TO262-3 PG-TO220-3 IPI06N03LA PG-TO262-3 06N03LA 06N03LA

    06CNE8N

    Abstract: No abstract text available
    Text: IPB06CNE8N G IPI06CNE8N G IPP06CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		PDF IPB06CNE8N IPI06CNE8N IPP06CNE8N PG-TO263-3 06CNE8N PG-TO262-3 06CNE8N

    Untitled

    Abstract: No abstract text available
    Text: IPI06N03LA, IPP06N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max 6.2 mΩ ID 50 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPI06N03LA, IPP06N03LA PG-TO262-3-1 PG-TO220-3-1 IPI06N03LA PG-TO262-3-1 PG-TO200-3-1 Q67042-S4147 Q67042-S4148

    IPP06CNE8N

    Abstract: JESD22 PG-TO220-3 06CNE8N
    Text: IPB06CNE8N G IPI06CNE8N G IPP06CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		PDF IPB06CNE8N IPI06CNE8N IPP06CNE8N PG-TO263-3 PG-TO262-3 PG-TO220-3 06CNE8N JESD22 PG-TO220-3 06CNE8N

    06N03LA

    Abstract: IPI06N03LA IPP06N03LA JESD22 IPI06
    Text: IPI06N03LA, IPP06N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max 6.2 mΩ ID 50 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPI06N03LA, IPP06N03LA PG-TO262-3-1 PG-TO220-3-1 IPI06N03LA 06N03LA PG-TO200-3-1 06N03LA IPI06N03LA IPP06N03LA JESD22 IPI06

    06n03la

    Abstract: No abstract text available
    Text: IPB06N03LA IPI06N03LA, IPP06N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target applications V DS 25 V R DS on),max (SMD version) 5.9 mΩ ID 50 A • N-channel - Logic level


    Original     		PDF IPB06N03LA IPI06N03LA, IPP06N03LA P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 IPI06N03LA P-TO263-3-2 06n03la

    06CN10N

    Abstract: IPP06CN10N IEC61249-2-21 JESD22 PG-TO220-3 IPP06CN10NG
    Text: IPB06CN10N G IPI06CN10N G IPP06CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		PDF IPB06CN10N IPI06CN10N IPP06CN10N IEC61249-2-21 PG-TO263-3 PG-TO262-3 PG-TO220-3 06CN10N IEC61249-2-21 JESD22 PG-TO220-3 IPP06CN10NG

    J 6920 A

    Abstract: ds 1-08 diode J 6920 06cn10n IPP06CN10N JESD22 PG-TO220-3
    Text: IPB06CN10N G IPI06CN10N G IPP06CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		PDF IPB06CN10N IPI06CN10N IPP06CN10N PG-TO263-3 PG-TO262-3 PG-TO220-3 06CN10N J 6920 A ds 1-08 diode J 6920 06cn10n JESD22 PG-TO220-3

    Untitled

    Abstract: No abstract text available
    Text: IPI06N03LA, IPP06N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max 6.2 mΩ ID 50 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPI06N03LA, IPP06N03LA PG-TO262-3-1 PG-TO220-3-1 IPI06N03LA PG-TO262-3-1 PG-TO200-3-1 06N03LA 06N03LA

    J 6920

    Abstract: J 6920 A
    Text: IPB06CN10N G IPI06CN10N G IPP06CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		PDF IPB06CN10N IPI06CN10N IPP06CN10N PG-TO263-3 06CN10N PG-TO262-3 J 6920 J 6920 A

    06n03la

    Abstract: 06N03L Q67042-S4146
    Text: IPB06N03LA IPI06N03LA, IPP06N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max (SMD version) 5.9 mW ID 50 A • Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPB06N03LA IPI06N03LA, IPP06N03LA P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 IPI06N03LA P-TO263-3-2 06n03la 06N03L Q67042-S4146

    230v led bulb schematic

    Abstract: KB31RD400 ncl30000 smd transistor t1A 230v dc 6a rectifier diode E27 smd transistor NCL300000 CFL dimmer trailing Leviton 6615 and8448
    Text: AND8463/D 11 Watt TRIAC Dimmable PAR30 LED Lamp Driver Prepared by: Jim Young ON Semiconductor http://onsemi.com APPLICATION NOTE well as electrical requirements for integrated driver within the bulb. One of the key requirements which applies to all bulbs that draw more than 5 watts of power is that the power


    Original     		PDF AND8463/D PAR30 230v led bulb schematic KB31RD400 ncl30000 smd transistor t1A 230v dc 6a rectifier diode E27 smd transistor NCL300000 CFL dimmer trailing Leviton 6615 and8448

    S 170 MOSFET TRANSISTOR

    Abstract: 8203 dual mosfet S 170 MOSFET SOT323 MOSFET P MOSFET SWITCHING FREQUENCY IPS09N03LA P-channel power mosfet SO-8 TDA21102 mosfet all mosfet equivalent book
    Text: Low Voltage ICs – Discretes: OptiMOS , OptiMOS ®2 Power Management & Supply DC/DC Selection Guide www.infineon.com/power May 2006 Introduction D C / D C C O N V E R S I O N plays a critical role in today’s applications such as desktop and notebook computers, consumer equipment, e.g. DVD players and


    Original     		PDF B152-H8203-G4-X-7600 S 170 MOSFET TRANSISTOR 8203 dual mosfet S 170 MOSFET SOT323 MOSFET P MOSFET SWITCHING FREQUENCY IPS09N03LA P-channel power mosfet SO-8 TDA21102 mosfet all mosfet equivalent book

    7408, 7404, 7486, 7432

    Abstract: RF400U functional diagram of 7400 and cd 4011 ls 7404 180 nm CMOS standard cell library TEXAS INSTRUMENTS 74191 4BITS s273 buffer 74374 7408 CMOS cmos 7404
    Text: TGC100 Series CMOS Gate Arrays RELEASE 3.0, REVISED JANUARY 1990 • Twelve Arrays with up to 26K Available Gates • Fast Prototype Turnaround Time • Extensive Design Support - Design Libraries Compatible with Daisy, Valid, and Mentor CAE Systems - Tl Regional ASIC Design Centers


    OCR Scan     		PDF TGC100 20-mA Sink/12mA TDB10LJ 120LJ TDC11LJ TDN11LJ 100MHz 7408, 7404, 7486, 7432 RF400U functional diagram of 7400 and cd 4011 ls 7404 180 nm CMOS standard cell library TEXAS INSTRUMENTS 74191 4BITS s273 buffer 74374 7408 CMOS cmos 7404