Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IPD48 Search Results

    IPD48 Datasheets (24)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IPD48-C40B Innovative Processing AG 40 GHz PIN Diode Chip Original PDF
    IPD48C-40B Innovative Processing AG 40 GHz PIN Diode Original PDF
    IPD48-C40N Innovative Processing AG 40 GHz PIN Diode Chip Original PDF
    IPD48C-40N Innovative Processing AG 40 GHz PIN Diode Original PDF
    IPD48-C40X Innovative Processing AG PIN Diode Original PDF
    IPD48-C45B Innovative Processing AG 45 GHz PIN Diode Chip Original PDF
    IPD48C-45B Innovative Processing AG 45 GHz PIN Diode Original PDF
    IPD48-C45N Innovative Processing AG 45 GHz PIN Diode Chip Original PDF
    IPD48C-45N Innovative Processing AG 45 GHz PIN Diode Original PDF
    IPD48-C45X Innovative Processing AG PIN Diode Original PDF
    IPD48-C60B Innovative Processing AG 60 GHz PIN Diode Chip Original PDF
    IPD48C-60B Innovative Processing AG 60 GHz PIN Diode Original PDF
    IPD48-C60N Innovative Processing AG 60 GHz PIN Diode Chip Original PDF
    IPD48C-60N Innovative Processing AG 60 GHz PIN Diode Original PDF
    IPD48-C60X Innovative Processing AG PIN Diode Original PDF
    IPD48-C80B Innovative Processing AG 80 GHz PIN Diode Chip Original PDF
    IPD48C-80B Innovative Processing AG 80 GHz PIN Diode Original PDF
    IPD48-C80N Innovative Processing AG 80 GHz PIN Diode Chip Original PDF
    IPD48C-80N Innovative Processing AG 80 GHz PIN Diode Original PDF
    IPD48-C80X Innovative Processing AG PIN Diode Original PDF

    IPD48 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    diode all

    Abstract: 4606 C40B C40N OC-768
    Text: IPAG - Innovative Processing AG Data Sheet Lotharstr. 55, D-47057 Duisburg, Germany - phone: +49 203 3792986, fax: +49 (203) 3794094 - www.ipag35.com IPD48_C40Z: 40 GHz PIN Diode Chip Applications The series IPD48 PINs are applicable for building up the next generation of high bit rate optoelectronic receivers for SONET/SDH (OC-768) including FEC and Ethernet applications.


    Original
    PDF D-47057 ipag35 IPD48 OC-768) Power75 DS-IPD48 C40Z-0002 diode all 4606 C40B C40N OC-768

    anti-reflection coating

    Abstract: C45N OC-768
    Text: IPAG - Innovative Processing AG Product Overview Lotharstr. 55, D-47057 Duisburg, Germany - phone: +49 203 3792986, fax: +49 (203) 3794094 - www.ipag35.com Series IPD48 PIN Diode The Series IPD48 PINs are applicable for building the next generation of high bit rate optoelectronic receivers for SONET/SDH


    Original
    PDF D-47057 ipag35 IPD48 IPD48 OC-768) PO-IPD48-0002 anti-reflection coating C45N OC-768

    diode all

    Abstract: 4606 C45B C45N OC-768 IPD48-C45N
    Text: IPAG - Innovative Processing AG Data Sheet Lotharstr. 55, D-47057 Duisburg, Germany - phone: +49 203 3792986, fax: +49 (203) 3794094 - www.ipag35.com IPD48_C45Z: 45 GHz PIN Diode Chip Applications The series IPD48 PINs are applicable for building up the next generation of high bit rate optoelectronic receivers for SONET/SDH (OC-768) including FEC and Ethernet applications.


    Original
    PDF D-47057 ipag35 IPD48 OC-768) Pow75 DS-IPD48 C45Z-0002 diode all 4606 C45B C45N OC-768 IPD48-C45N

    IPD48C-45B

    Abstract: IPD48C-45N OC-768
    Text: IPAG - Innovative Processing AG IPD48C-45z: 45 GHz PIN Diode Applications The series IPD48 PINs are applicable for building up the next generation of high bit rate opto-electronic receivers for SONET/SDH OC-768 including FEC and Ethernet applications. Features


    Original
    PDF IPD48C-45z: IPD48 OC-768) IPD48C-45B IPD48C-45N ipag35 IPD48X-45z IPD48C-45B IPD48C-45N OC-768

    IPD48C-80B

    Abstract: IPD48C-80N OC-768
    Text: IPAG - Innovative Processing AG IPD48C-80z: 80 GHz PIN Diode Applications The series IPD48 PINs are applicable for building up the next generation of high bit rate opto-electronic receivers for SONET/SDH OC-768 including FEC and Ethernet applications. Due to the distinct phase linearity, the highbandwidth IPD48X-80z PINs are suitable


    Original
    PDF IPD48C-80z: IPD48 OC-768) IPD48X-80z 80GHz. IPD48C-80B ipag35 IPD48X-80Z IPD48C-80B IPD48C-80N OC-768

    Innovative Processing AG

    Abstract: 6 GHz PIN diode IPD48C-40B IPD48C-40N OC-768 10 GHz pin diode
    Text: IPAG - Innovative Processing AG IPD48C-40z: 40 GHz PIN Diode Applications The series IPD48 PINs are applicable for building up the next generation of high bit rate opto-electronic receivers for SONET/SDH OC-768 and Ethernet applications. Features • True bandwidth of 40 GHz (-3dB)


    Original
    PDF IPD48C-40z: IPD48 OC-768) IPD48C-40B IPD48C-40N ipag35 IPD48X-40z Innovative Processing AG 6 GHz PIN diode IPD48C-40B IPD48C-40N OC-768 10 GHz pin diode

    60 GHz PIN diode

    Abstract: 4606 diode all C60B C60N C60Z OC-768 IPD48
    Text: IPAG - Innovative Processing AG Data Sheet Lotharstr. 55, D-47057 Duisburg, Germany - phone: +49 203 3792986, fax: +49 (203) 3794094 - www.ipag35.com IPD48_C60Z: 60 GHz PIN Diode Chip Applications The series IPD48 PINs are applicable for building up the next generation of high bit rate optoelectronic receivers for SONET/SDH (OC-768) including FEC and Ethernet applications.


    Original
    PDF D-47057 ipag35 IPD48 OC-768) Power75 DS-IPD48 C60Z-0002 60 GHz PIN diode 4606 diode all C60B C60N C60Z OC-768

    diode all

    Abstract: C80N OC-768
    Text: IPAG - Innovative Processing AG Data Sheet Lotharstr. 55, D-47057 Duisburg, Germany - phone: +49 203 3792986, fax: +49 (203) 3794094 - www.ipag35.com IPD48_C80Z: 80 GHz PIN Diode Chip Applications The series IPD48 PINs are applicable for building up the next generation of high bit rate optoelectronic receivers for SONET/SDH (OC-768) including FEC and Ethernet applications.


    Original
    PDF D-47057 ipag35 IPD48 OC-768) 80GHz. DS-IPD48 C80Z-0002 diode all C80N OC-768

    60 GHz PIN diode

    Abstract: diode PIN 60 Ghz 20 GHz PIN diode IPD48C-60B IPD48C-60N OC-768 pin diode
    Text: IPAG - Innovative Processing AG IPD48C-60z: 60 GHz PIN Diode Applications The series IPD48 PINs are applicable for building up the next generation of high bit rate opto-electronic receivers for SONET/SDH OC-768 including FEC and Ethernet applications. Features


    Original
    PDF IPD48C-60z: IPD48 OC-768) IPD48C-60B IPD48C-60N ipag35 IPD48X-60z 60 GHz PIN diode diode PIN 60 Ghz 20 GHz PIN diode IPD48C-60B IPD48C-60N OC-768 pin diode

    D482445LGW-A70

    Abstract: cwi 1011
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT /¿PD482444, 482445 4M-Bit Dual Port Graphics Buffer 256K-WORD BY 16-BIT D escrip tio n The /iPD482444 and ^PD482445 have a random access port and a serial access port. The random access port has a 4M-bit 262, 144 words x 16 bits memory cell array structure. The serial access port can perform clock


    OCR Scan
    PDF PD482444, 256K-WORD 16-BIT /iPD482444 PD482445 iPD482445 008t8oo2 020tg bM27525 00b3flD D482445LGW-A70 cwi 1011

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET M FC" / _/ MOS INTEGRATED CIRCUIT ¿¿PD482444, 482445 4M-Bit Dual Port Graphics Buffer 256K WORDS BY 16 BITS Description The /iPD482444 and ¿i PD482445 have a random access port and a serial access port. The random access port has a 4M-bit 262,144 words x 16 bits memory cell array structure. The serial access port can perform


    OCR Scan
    PDF PD482444, /iPD482444 PD482445 /PD482445 543taoi! 008to //PD482444, /iPD482444and iPD482444GW 64-Pin

    D482234

    Abstract: No abstract text available
    Text: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT //PD482234, 482235 2M-Bit Dual Port Graphics Buffer 256K-WORD BY 8-BIT D escription The iPD482234 and /iPD482235 have a random access port and a serial access port. The random access port has a 2M-bit 262,144 words x 8 bits memory cell array structure. The serial access port can perform clock operations


    OCR Scan
    PDF uPD482234 uPD482235 256K-WORD jiPD482234 /iPD482235 /tPD482235 PP482234. b427525 00b3flfl3 UPD482234. D482234

    D482234

    Abstract: D482234G5-70 d482235le D482235 icc20 sis 735 k7 TNC 24 mk 2 d482235g5-60 SES N 2402
    Text: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT //PD482234, 482235 2M-Bit Dual Port Graphics Buffer 256K-WORD BY 8-BIT D escription The iPD482234 and /iPD482235 have a random access port and a serial access port. The random access port has a 2M-bit 262,144 words x 8 bits memory cell array structure. The serial access port can perform clock operations


    OCR Scan
    PDF uPD482234 uPD482235 256K-WORD jiPD482234 /iPD482235 /tPD482235 PP482234. b427525 00b3flfl3 UPD482234. D482234 D482234G5-70 d482235le D482235 icc20 sis 735 k7 TNC 24 mk 2 d482235g5-60 SES N 2402

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT LINE BUFFER 5 K-WORD BY 16-BIT/10K-W ORD BY 8-BIT Description The /¿PD485506 is a high speed FIFO First In First Out line buffer. Word organization can be changed either 5,048 words by 16 bits or 10,096 words by 8 bits.


    OCR Scan
    PDF 16-BIT/10K-W uPD485506 PD485506

    NL1031

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /¿ P D 4 8 8 3 0 L 8M-BIT Rambus DRAM 1M-WORD X 8-BIT X 1-BANK Description The 8-Megabit Ram bus DRAM RD R A M ™ is an extremely-high-speed C M O S DRAM organized as 1M w ords by 8 bits and capable of bursting up to 256 bytes of data at 2 ns per byte. The use of Ram bus Signaling


    OCR Scan
    PDF IPD48830L P32G6-65A NL1031

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT ¿¿PD488448, 488488 128/144 M-bit Direct Rambus DRAM Description The Direct Rambus DRAM Direct RDRAM™ is a general purpose high-performance memory device suitable for use in a broad range of applications including com puter memory, graphics, video, and any other application where


    OCR Scan
    PDF PD488448, JUPD488448 128M-bit PD488488 144M-bit 14072EJ1V0D

    Untitled

    Abstract: No abstract text available
    Text: JJPD485506 Line Buffer for Communications Systems NEC Electronics Inc. Description Pin Configurations The /j PD485506 is a 5048-w ord by 16-bit d ual-port line buffer fab ric a te d w ith a silicon-gate CM OS process. T he device is capab le of asynchronous read and w rite


    OCR Scan
    PDF JJPD485506 PD485506 5048-w 16-bit 44-Pin iPD485506 OUT11 OUT12 DOUT13 DOUT14

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /¿PD488170L 18M-BIT Rambus DRAM 1M-WORD X 9-BIT X 2-BANK Description The 18-Megabit Rambus DRAM RDRAM™ is an extrem ely-high-speed CMOS DRAM organized as 2M w o rds by 9 bits and capable o f bursting up to 256 bytes of data at 2 ns per byte. The use o f Rambus S ignaling


    OCR Scan
    PDF PD488170L 18M-BIT 18-Megabit P32G6-65A

    Untitled

    Abstract: No abstract text available
    Text: NEC NEC Electronics Inc. IPD482444, 482445 4M Video RAM Preliminary Information_ Description The ¿/PD482444 fast-page and /UPD482445 hyper-page video RAMs have a random access p o rt and a serial read/write port. The serial read/write p o rt is connected


    OCR Scan
    PDF JLIPD482444, /PD482444 /UPD482445 8192-bit 16-bit 16-bit

    mkph

    Abstract: LG concurrent RDRAM Concurrent RDRAM IIPD488170 IPD488170LVN-A40-9 IPD488170LVN-A50-9 905 nec IC-3384 concurrent rdram NEC NEC RDRAM concurrent
    Text: Rambus DRAM PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT |liP D 4 8 8 1 7 0 18M bit Rambus DRAM 1 Mword x 9bit x 2bank Description H The 18-Megabit Rambus DRAM (RDRAM™) is an extremely-high-speed CMOS DRAM organized asy|M w o r th y 9 bits and capable of bursting up to 256 bytes of data at 2 ns per byte. The use of Rambus Signaling


    OCR Scan
    PDF 18-Megabit PD488170 IIPD488170 ED-7424) mkph LG concurrent RDRAM Concurrent RDRAM IIPD488170 IPD488170LVN-A40-9 IPD488170LVN-A50-9 905 nec IC-3384 concurrent rdram NEC NEC RDRAM concurrent

    UPD482445GW-70

    Abstract: UPD482445
    Text: DATA SHEET MOS INTEGRATED CIRCUIT UPD482444, 482445 4M-Bit Dual Port Graphics Buffer 256K-WORD BY 16-BIT D es crip tio n The ,uPD482444 and ,uPD482445 have a random access port and a serial access port. The random access port has a 4M-bit 262, 144 words x 16 bits memory cell array structure. The serial access port can perform clock


    OCR Scan
    PDF uPD482444 uPD482445 256K-WORD 16-BIT UPD482445GW-70

    uPD488031

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT 8M-BIT Rambus DRAM 1M-WORD X 8-BIT X 1-BANK Description The 8-Megabit Rambus DRAM RDRAM™ is an extremely-high-speed CMOS DRAM organized as 1M words by 8 bits and capable of bursting up to 256 bytes of data at 2 ns per byte. The use of Rambus Signaling Logic (RSL)


    OCR Scan
    PDF 11-OtO P32G6-65A uPD488031

    TA51B

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿ P D 4 8 8 1 3 0 L 16M-BIT Rambus DRAM 1M-WORD X 8-BIT X 2-BANK Description The 16-M egabit Rambus DRAM RDRAM™ is an extrem ely-high-speed CMOS DRAM organized as 2M w ords by 8 bits and capable o f bursting up to 256 bytes of data at 2 ns per byte. The use of Rambus S ignaling


    OCR Scan
    PDF 16M-BIT P32G6-65A TA51B

    D481850

    Abstract: NEC D481850 D481
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT 481850 ¿ ÎP D 8M-bit Synchronous GRAM Description The ¿¿PD481850 is a synchronous graphics memory SGRAM organized as 131,072 words x 32 bits x 2 banks random access port. This device can operate up to 100 MHz by using synchronous interface. Also, it has 8-column Block Write function


    OCR Scan
    PDF uPD481850 100-pin S100GF-65-JBT juPD481850 MPD481850GF-JBT: D481850 NEC D481850 D481