Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /iPD4564441, 4564841 64M-bit Synchronous DRAM 4-bank, LVTTL Description T h e ¿¿PD4564441,4664641 are high-speed 67,108,864-bit s y n c h ro n o u s d y n a m ic ra n d o m -a ccess m em ories, org a n ize d as 4,194,304x4x4 and 2,097,152x8x4 wordxbttxbank , respectively.
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uPD4564441
uPD4564841
64M-bit
PD4564441
864-bit
304x4x4
152x8x4
54-pin
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD4516421, 4516821, 4516161 16M-bit Synchronous DRAM D escrip tio n The /iPD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynam ic random-access m em ories, organized as 2,097,152x4x2, 1,048,576x8x2 and 524,288x16x2 w ordxbitxbank , respectively.
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PD4516421,
16M-bit
/iPD4516421,
216-bit
152x4x2,
576x8x2
288x16x2
44-pin
50-pin
b42755S
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /IPD4502161 2M-bit Synchronous DRAM Description The ¿¡PD4502161 is a high-speed 2,097,152-bit synchronous dynam ic random -access memory, organized as 65,536 x 16 x 2 word x bit x bank , respectively. The synchronous DRAM achieves high-speed data transfer using the pipeline architecture.
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/IPD4502161
PD4502161
152-bit
50-pin
S50G5-80-7JF3
PD4502161
PD4502161.
PD4502161G5-7JF:
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d4564
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ;iPD4564441,4564841,4564163 64M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4, 2,097,152 x 8 x 4, 1,048,576 x16 x 4 word x bit x bank , respectively.
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iPD4564441
64M-bit
uPD4564441
864-bit
54-pin
M12621EJAV0DS00
d4564
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AKR 121
Abstract: 4564821G5 A7 RFTA
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT juPD4564421, 4564821 64M-bit Synchronous DRAM 2-bank, LVTTL Description The /iPD4564421,4564821 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 8,388,608x4x2 and 4,194,304x8x2 wordxbitxbank , respectively.
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uPD4564421
64M-bit
/iPD4564421
864-bit
608x4x2
304x8x2
54-pin
004x0
AKR 121
4564821G5
A7 RFTA
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A8RN
Abstract: uPD4502161 D4502161
Text: DATA SHEET MOS INTEGRATED CIRCUIT ju P D 4 5 0 2 1 6 1 2M-bit Synchronous DRAM Description The /¿PD4502161 is a high-speed 2,097,152-bit synchronous dynamic random-access memory, organized as 65,536 x 16 x 2 word x bit x bank , respectively. The synchronous DRAM achieves high-speed data transfer using the pipeline architecture.
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uPD4502161
152-bit
50-pin
A8RN
D4502161
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A725F
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-454AA725 4M-W ORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-454AA725 is a 4,194,304 w ords by 72 bits synchronous dynamic RAM module on which 18 pieces of 16M SDRAM : /¿PD4516421A are assembled.
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MC-454AA725
72-BIT
MC-454AA725
uPD4516421A
C-454AA725-A80
C-454AA725-A10
A725F
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a1001h
Abstract: C458D
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-458DA724 8M-W ORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE BUFFERED TYPE Description The MC-458DA724 is a 8,388,608 words by 72 bits synchronous dynamic RAM module on which 9 pieces of 64M SDRAM : /¿PD4564841 are assembled.
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MC-458DA724
72-BIT
MC-458DA724
uPD4564841
C-458DA724-A80
C-458D
A724-A10
a1001h
C458D
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c945 TRANSISTOR equivalent
Abstract: 830GT
Text: DATA SHEET NEC BIPOLAR ANALOG INTEGRATED CIRCUIT FILTER-CONTAINING VIDEO CHROMA, SYNCHRONIZING SIGNAL PROCESSING LSI COMPATIBLE WITH NTSC/PAL SYSTEM DESCRIPTION The /¿PC1830 is a filter-containing video chroma, synchronizing signal processing LSI compatible with the NTSC/
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uPC1830
c945 TRANSISTOR equivalent
830GT
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A10B1
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-454AC725 4M-W ORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-454AC725 is a 4,194,304 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 16M
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MC-454AC725
72-BIT
MC-454AC725
uPD4516821A
C-454AC725-A80
-454AC
725-A10
A10B1
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-454CB645 4M-W ORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-454CB645 is a 4,194,304 words by 64 bits synchronous dynamic RAM module on which 4 pieces of 64M
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MC-454CB645
64-BIT
MC-454CB645
uPD4564163
MC-454C
B645-A10
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D45128841G5-A80
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET / - N E C ^ MOS INTEGRATED CIRCUIT _ / /¿ P D 4 5 1 2 8 4 4 1 ,4 5 1 2 8 8 4 1 , 4 5 1 2 8 1 6 3 128 M-bit Synchronous DRAM
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uPD45128441
608x4x4,
304x8x4,
152x16x4
S54G5-80-9JF
PD45128441
PD45128xxx.
juPD45128xxxG5
54-pin
D45128841G5-A80
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT 64M-BIT VIRTUAL CHANNEL SDRAM SINGLE DATA RATE 64M-BIT VIRTUAL CHANNEL SDRAM VERSION 1.1 Description The 64 Mbit Virtual Channel VC SDRAM is implemented to be 100% pin and package compatible to the industry standard SDRAM. It uses the same command protocol and interface as SDRAM. The VC SDRAM command set is a
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64M-BIT
S54G5-80-9JF
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Untitled
Abstract: No abstract text available
Text: DA TA SH EE T NEC MOS INTEGRATED CIRCUIT ¿¿PD4565421,4565821, 4565161 64M-BIT VIRTUAL CHANNEL SDRAM Description The 64M -bit Virtual Channel VC SDRAM is implemented to be 100% pin and package compatible to the industry standard SDRAM. It uses the same command protocol and interface as SDRAM. The VC SDRAM command set is a
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PD4565421
64M-BIT
M13022EJBV0DS00
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Sony CCD-Sensor
Abstract: 11 mm CCD-Sensor CCD-Sensor 640 MN37771PT infrared CCD-Sensor MN37210FP camera interface microcontroller heart pulse rate sensor PAL 007 a audio amplifier ic smd 2d 1002 -reel
Text: Philips Semiconductors Preliminary specification Digital camera USB interface SAA8115HL CONTENTS 1 FEATURES 2 APPLICATIONS 3 GENERAL DESCRIPTION 4 ORDERING INFORMATION 5 QUICK REFERENCE DATA 6 BLOCK DIAGRAM 7 PINNING 8 FUNCTIONAL DESCRIPTION 8.1 8.2 8.3 8.4
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SAA8115HL
Sony CCD-Sensor
11 mm CCD-Sensor
CCD-Sensor 640
MN37771PT
infrared CCD-Sensor
MN37210FP
camera interface microcontroller
heart pulse rate sensor
PAL 007 a audio amplifier ic
smd 2d 1002 -reel
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Untitled
Abstract: No abstract text available
Text: P R E L IM IN A R Y D A T A S H E E T _ NEC MOS INTEGRATED CIRCUIT MC-454AD644 4 M-W ORD BY 64-BIT SYN C H R O N O U S DYNAMIC RAM MODULE U NBUFFERED TYPE Description The M C -454A D644 is a 4,194,304 words by 64 bits synchronous dynamic R A M module on which 16 pieces of 16 M
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MC-454AD644
64-BIT
MC-454AD644
uPD4516821
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d4516161
Abstract: NEC 1216 D451616 4516161 IC-3394 ba6x T8836 D4516161GS d4516 UPD4516161
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD4516421, 4516821, 4516161 16M-bit Synchronous DRAM Description The /¿PD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynamic random-access memories, organized as 2,097,152x4x2, 1,048,576x8x2 and 524,288x16x2 wordxbitxbank , respectively.
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uPD4516421
uPD4516821
uPD4516161
16M-bit
PD4516421,
216-bit
152x4x2,
576x8x2
288x16x2
44-pin
d4516161
NEC 1216
D451616
4516161
IC-3394
ba6x
T8836
D4516161GS
d4516
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NEC uPD 688
Abstract: CQ-111
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /i PD4516421,4516821,4516161 16M bit Synchronous DRAM Description The UPD4516421, UPD4516821, uPD 4516161 are high-speed 16 777 216-bit synchronous dynamic random-access memories, each organized as 2 097 152-word x
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uPD4516421
uPD4516821
uPD4516161
UPD4516421,
UPD4516821,
216-bit
152-word
576-word
288-word
x16-bit
NEC uPD 688
CQ-111
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TCL271
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC / MOS INTEGRATED CIRCUIT / MC-458BA72 8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE BUFFERED TYPE Description T he M C-458B A72 is a 8,388,608 w ords b y 72 bits synchrono us dyna m ic RAM m odule on which 9 pieces of 64 M SD R A M : ¿¿PD4564621 are assem bled.
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MC-458BA72
72-BIT
MC-458BA72
uPD4564621
MC-4588A72-A10
MC-458BA72-A12
TCL271
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC / MOS INTEGRATED CIRCUIT MC-458AB644 3 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-458AB644 is a 8,388,608 words by 64 bits synchronous dynamic RAM module on which 8 pieces of 64 M SDRAM : //PD4564821 are assembled.
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MC-458AB644
64-BIT
MC-458AB644
uPD4564821
MC-458AB644-A10
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC / MOS INTEGRATED CIRCUIT MC-454BA8C 4M-WORD BY 80-BIT SYNCHRONOUS DYNAMIC RAM MODULE BUFFERED TYPE Description The MC-454BA80 is a 4,194,304 words by 80 bits synchronous dynamic RAM module on which 20 pieces of 16 M SDRAM : ¿¿PD4516421 are assembled.
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MC-454BA8C
80-BIT
MC-454BA80
uPD4516421
MC-454BA80-A10
MC-454BA80A12
MC-454BA80
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max100MHZ
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC / MOS INTEGRATED CIRCUIT MC-458AB64S 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The MC-458AB64S is a 8,388,608 words by 64 bits synchronous dynamic RAM module(Small Outline DIMM) on which 8 pieces of 64 M SDRAM : ¿/PD4564821 are assembled.
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MC-458AB64S
64-BIT
MC-458AB64S
uPD4564821
max100MHZ
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-4516CD644 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516CD644 is a 16,777,216 words by 64 bits synchronous dynamic RAM module on which 16 pieces of
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MC-4516CD644
16M-WORD
64-BIT
MC-4516CD644
uPD4564841
C-4516CD644-A10
C-4516C
D644-A12
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT MC-454BC72 4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE BUFFERED TYPE D escription The MC-454BC72 is a 4,194,304 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 16 M
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MC-454BC72
72-BIT
MC-454BC72
iPD4516821
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