Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT /¿PD42S17800,4217800 16 M BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE Description The/iPD42S17800, 4217800 are 2,097,152 words by 8 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.
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uPD42S17800
uPD4217800
The/iPD42S17800,
PD42S17800
28-pin
/jPD42S
juPD42S17800-70
PD42S17800-80,
130su
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Untitled
Abstract: No abstract text available
Text: DATA SHEET M O S INTEGRATED CIRCUIT MC-42S1000LAD32S SERIES 1 M -W ORD BY 32-BIT DYN AM IC RA M M ODULE SO D IM M FAST PAGE MODE Description TheMC-42S1000LAD32S series is a 1,048,576 words by 32 bits dynamic RAM module (Small Outline DIMM) on which 2 pieces of 16 M DRAM: /iPD42S18160L are assembled.
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MC-42S1000LAD32S
32-BIT
TheMC-42S1000LAD32S
/iPD42S18160L
M72S-50A4
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC / _ / MOS INTEGRATED CIRCUIT /iPD42S16400L, 4216400L, 42S17400L, 4217400L 3.3 V OPERATION 16 M BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE Description T h e ¿ P D 42S16400L, 4 21 6 4 0 0 L , 4 2 S 1 7 4 0 0 L , 4 2 1 7 4 0 0 L a re 4 194 3 0 4 w o r d s b y 4 b its d y n a m ic C M O S R A M s .
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/iPD42S16400L,
4216400L,
42S17400L,
4217400L
42S16400L,
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT F/ iPD42S16400L, 4216400L, 42S17400L, 4217400L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE a DESCRIPTION The /¿PD42S16400L, 4216400L, 42S17400L, 4217400L are 4 194 304 words by 4 bits dynamic CMOS RAMs.
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/iPD42S16400L,
4216400L,
42S17400L,
PD42S16400L,
4217400L
uPD42S16400L
42S17400L
26-pin
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nec A2C
Abstract: No abstract text available
Text: MOS INTEGRATED CIRCUIT ju P D 4 2 S 1 6 1 6 5 L , 4 2 1 6 1 6 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The|iPD42S16165L, 4216165Lare 1 048 576 w ords by 16 bits dynamic CMOS RAMs w ith optional hyper page
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16-BIT,
uPD42S16165L
uPD4216165L
/JPD42S16165L,
4216165L
50-pin
42-pin
pPD42S16165L-A60,
4216165L-A60
/iPD42Sl6165L-A70,
nec A2C
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SL680C
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ _ _ _ _ _ _ _ _ _ /¡u P D 42S 16800,4216800,42317800,421780C 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE Description The /iPD42S16800, 4216800, 42S17800, 4217800 are 2,097,152 words by 8 bits CMOS dynamic RAMs. The
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421780C
uPD42S16800
uPD4216800
uPD42S17800
uPD4217800
PD42S16800,
42S17800
28-pin
R35-207-2
SL680C
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D42S17800-70
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT //¿PD42S16800,4216800,42S17800,4217800 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE Description T he /¿PD42S16800, 4216800, 42S17800, 4217800 are 2 097 152 w o rd s b y 8 b its d y n a m ic CMOS RAMs. These d iffe r in refresh cycle and th e /IPD42S16800, 42S17800 can exe cute CAS be fore RAS s e lf refresh.
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uPD42S16800
uPD4216800
uPD42S17800
uPD4217800
PD42S16800,
42S17800,
/IPD42S16800,
42S17800
28-pin
D42S17800-70
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4216100
Abstract: 4216100-70
Text: DATA SHEET MOS INTEGRATED CIRCUIT MD42S16100, 4216100,42S17100,4217100 16 M-BIT DYNAMIC RAM 16 M-WORD BY 1-BIT, FAST PAGE MODE DESCR IPTIO N The /¿PD42S16100, 4216100, 42S17100, 4217100 are 16 777 216 w ords by 1 bit dynam ic CMOS RAMs. These differ in refresh cycle and the /iPD42S16100, 42S17100 can execute CAS before RAS self refresh. They
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MD42S16100,
42S17100
uPD42S16100
uPD4216100
uPD42S17100
uPD4217100
/iPD42S16100,
//PD42S16100,
4216100
4216100-70
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NEC 4216160
Abstract: No abstract text available
Text: MOS INTEGRATED CIRCUIT f iPD42S16160,4216160,42S18160,4218160 16 M -BIT DYNAM IC RAM 1 M -W ORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE DESCRIPTION The mPD42S16160, 4216160, 42S18160, 4218160 are 1 048 576 words by 16 bits dynamic CMOS RAMs. These differ in refresh cycle and the /iPD42S16160, 42S18160 can execute CAS before RAS self refresh (see
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uPD42S16160
uPD4216160
uPD42S18160
uPD4218160
16-BIT,
42S16160,
42S18160,
/iPD42S16160,
42S18160
50-pin
NEC 4216160
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6400L-A5G
Abstract: d4216400
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / ¿¿PD42S16400L, 4216400L, 42S17400L, 4217400L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD B Y 4-BIT, F A S T P A G E M ODE Description The /iPD42S16400L, 4216400L, 42S17400L, 4217400L are 4,194,304 words by 4 bits CMOS dynamic RAMs. The
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uPD42S16400L
uPD4216400L
uPD42S17400L
uPD4217400L
/iPD42S16400L,
4216400L,
42S17400L,
4217400L
JUPD42S16400L,
42S17400L
6400L-A5G
d4216400
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-42S2000LAD32S SERIES 2 M-WORD BY 32-BIT DYNAMIC RAM MODULE SO DIMM FAST PAGE MODE Description The MC-42S2000LAD32S series is a 2,097,152 words by 32 bits dynamic RAM module (Sm all Outline D IM M ) on which 4 pieces of 16 M DRAM: /iPD42S18160L are assembled.
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MC-42S2000LAD32S
32-BIT
uPD42S18160L
M72S-50A3
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT /iPD42S17405, 4217405 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, EDO Description The ¿¡PD42S17405, 4217405 are 4,194,304 words by 4 bits CMOS dynamic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.
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/iPD42S17405,
PD42S17405,
PD42S17405
26-pin
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT /iPD42S17805, 4217805 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, EDO Description The ¿¡PD42S17805, 4217805 are 2,097,152 w ords by 8 bits CMOS dynam ic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.
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/iPD42S17805,
PD42S17805,
PD42S17805
28-pin
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nec A2C
Abstract: 8160l1
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD42S18160L, 4218160L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The /iPD42S18160L, 4218160L are 1,048,576 words by 16 bits CMOS dynamic RAMs. The fast page mode and
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uPD42S18160L
uPD4218160L
16-BIT,
/iPD42S18160L,
4218160L
PD42S18160L
50-pin
42-pin
PD42S18160L-A60,
4218160L-A60
nec A2C
8160l1
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D42S18165
Abstract: No abstract text available
Text: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT ¿ ¿ P D 42S 18165, 4218165 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE Description The /iPD42S18165,4218165 are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional hyper page mode
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16-BIT,
uPD42S18165
uPD4218165
/jPD42S18165
/iPD42S18165,
50-pin
42-pin
016lg
PD42S18165,
D42S18165
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7805L
Abstract: FTO-xx
Text: PRELIMINARY DATA SHEET CMOS INTEGRATED CIRCUIT JEC juPD42S17805L, 4217805L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, HYPER PAGE MODE Description The /iPD42S17805L, 4217805L are 2 097 152 words by 8 bits CMOS dynam ic RAMs w ith optional hyper page
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uPD42S17805L
uPD4217805L
/iPD42S17805L,
4217805L
28-pin
fiPD42S17805L-A70,
4217805L-A70
7805L
FTO-xx
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42S17405
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET CMOS INTEGRATED CIRCUIT ju P D 4 2 S 1 7 4 0 5 , 4 2 1 7 4 0 5 16 M BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, HYPER PAGE MODE Description The /iPD42S17405, 4217405 are 4 194 304 w o rd s by 4 bits CMOS d yn a m ic R AM s w ith o p tio n a l h y p e r page
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uPD42S17405
uPD4217405
fjPD42S17405,
26-pin
/jPD42S
fiPD42S
S26LA-300A
0081o
42S17405
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /iPD42S17405L, 4217405L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, HYPER PAGE MODE EDO Description The /iPD42S17405L, 4217405L are 4,194,304 words by 4 bits CMOS dynamic RAMs with optional hyper page mode (EDO).
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uPD42S17405L
uPD4217405L
PD42S17405L
PD42S17405L,
4217405L
26-pin
/iPD42S17405L-A60,
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4216100
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT r/iPD42S16100 ,4 2 1 6 1 0 0 ,4 2 S 1 7 1 0 0 ,4217100 16M-BIT DYNAMIC RAM 16 M-WORD BY 1-BIT, FAST PAGE MODE DESCRIPTION The juPD42S16100, 4216100, 42S17100, 4217100 are 16 777 216 w ords by 1 bit dynam ic CMOS RAMs. These differ in refresh cycle and the ¿¿PD42S16100, 42S17100 can execute CAS before RAS self refresh. They
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uPD42S16100
uPD4216100
uPD42S17100
uPD4217100
16M-BIT
PD42S16100,
42S17100,
42S17100
4216100
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3217b
Abstract: NEC 4216160 4216160 IC-3217B 4218160
Text: DATA SHEET MOS INTEGRATED CIRCUIT /¿PD42S16160,4216160,42S18160,4218160 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE D escription The /iPD42S16160, 4216160, 42S18160, 4218160 are 1 048 576 words by 16 bits dynamic CMOS RAMs.
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uPD42S16160
uPD4216160
uPD42S18160
uPD4218160
16-BIT,
/iPD42S16160,
42S18160,
PD42S16160,
42S18160
50-pin
3217b
NEC 4216160
4216160
IC-3217B
4218160
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NEC JAPAN 7805
Abstract: D42S17805
Text: PRELIMINARY DATA SHEET CMOS INTEGRATED CIRCUIT JUPD4 2 S 1 7 8 0 5 ,4 2 1 7 8 0 5 16 M BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, HYPER PAGE MODE Description The /iPD42S17805, 4217805 are 2 097 152 words by 8 bits CMOS dynamic RAMs with optional hyper page mode. Hyper page mode is a kind o f the page mode and is useful for the read operation.
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/iPD42S17805,
/1PD42S17805,
28-pin
PD42S
P28LE-400A1
043tS:
i38tg:
016tg
00Slg
NEC JAPAN 7805
D42S17805
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT jU P D 4 2 S 1 6 4 0 5 L , 4 2 1 6 4 0 5 L 3.3 V OPERATION 16 M BIT DYNAMIC RAM 4M-WORD BY 4-BIT, HYPER PAGE MODE Description The /iPD42S16405L, 4216405L are 4,194,304 w ords by 4 bits CMOS dynam ic RAM w ith optional hyper page
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/iPD42S16405L,
4216405L
jiPD42S16405L
26-pin
iPD42S16405L-A70,
421640mit:
b427S5S
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Untitled
Abstract: No abstract text available
Text: NEC MOS INTEGRATED CIRCUIT /¿PD42S16800L, 4216800L, 42S17800L, 4217800L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE DESCRIPTION The /JPD42S16800L, 4216800L, 42S17800L, 4217800L are 2 097 152 w ords by 8 bits dynamic CMOS RAMs. These differ in refresh cycle and the |iPD42S16800L, 42S17800L can execute CAS before RAS self refresh see
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uPD42S16800L
uPD4216800L
uPD42S17800L
uPD4217800L
/JPD42S16800L,
4216800L,
42S17800L,
4217800L
iPD42S16800L,
42S17800L
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st vu
Abstract: cc460 Himax NEC SOI switch 043tg
Text: NEC MOS INTEGRATED CIRCUIT /¿PD42S16800L, 4216800L, 42S17800L, 4217800L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE DESCRIPTION The /JPD42S16800L, 4216800L, 42S17800L, 4217800L are 2 097 152 w ords by 8 bits dynamic CMOS RAMs. These differ in refresh cycle and the |iPD42S16800L, 42S17800L can execute CAS before RAS self refresh see
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uPD42S16800L
uPD4216800L
uPD42S17800L
uPD4217800L
/JPD42S16800L,
4216800L,
42S17800L,
4217800L
iPD42S16800L,
42S17800L
st vu
cc460
Himax
NEC SOI switch
043tg
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