IPB066N06N Search Results

IPB066N06N Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IEC61249-2-21 Abstract: IPB066N06N IPP066N06N C2320 Text: IPB070N06N G IPP070N06N G IPI070N06N G OptiMOS Power-Transistor Product Summary Features V DS • Low gate charge for fast switching applications R DS on ,max • N-channel enhancement - normal level SMDversion ID 60 V 6.7 mΩ 80 A • 175 °C operating temperature	Original	PDF	IPB070N06N IPP070N06N IPI070N06N IEC61249-2-21 IPB066N06N P-TO263-3-2 P-TO263-3 IEC61249-2-21 IPP066N06N C2320
DD 127 D TRANSISTOR Abstract: IPB066N06N IPP066N06N g33 smd 860 Text: IPB070N06N G IPP070N06N G IPI070N06N G OptiMOS Power-Transistor Product Summary Features V DS • Low gate charge for fast switching applications R DS on ,max • N-channel enhancement - normal level SMDversion ID 60 V 6.7 mΩ 80 A • 175 °C operating temperature	Original	PDF	IPB070N06N IPP070N06N IPI070N06N IPB066N06N P-TO263-3 P-TO263-3-2 P-TO220-3 DD 127 D TRANSISTOR IPP066N06N g33 smd 860
DD 127 D TRANSISTOR Abstract: IPP066N06N g33 smd 860 IPB066N06N 066N06N PG-TO220-3 IPB070N06N Text: IPB070N06N G OptiMOS Power-Transistor IPP070N06N G Product Summary Features V DS • Low gate charge for fast switching applications R DS on ,max • N-channel enhancement - normal level SMDversion ID 60 V 6.7 mΩ 80 A • 175 °C operating temperature	Original	PDF	IPB070N06N IPP070N06N IPB066N06N P-TO263-3-2 P-TO220-3-1 066N06N IPP066N06N DD 127 D TRANSISTOR g33 smd 860 066N06N PG-TO220-3
DD 127 D TRANSISTOR Abstract: IPB066N06N IPP066N06N g33 smd 860 Text: IPB070N06N G IPP070N06N G IPI070N06N G OptiMOS Power-Transistor Product Summary Features V DS • Low gate charge for fast switching applications R DS on ,max • N-channel enhancement - normal level SMDversion ID 60 V 6.7 m: 80 A • 175 °C operating temperature	Original	PDF	IPB070N06N IPP070N06N IPI070N06N IPB066N06N PG-TO263-3 P-TO263-3-2 PG-TO220-3 DD 127 D TRANSISTOR IPP066N06N g33 smd 860