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Infineon Technologies AG IPB051NE8NGATMA1 IPB051NE8 - OptlMOS N-Channel Power MOSFET '
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	IPB051NE8NGATMA1		775		1	1 $1.58 10 $1.58 100 $1.49 1000 $1.34 10000 $1.34	Buy Now

IPB051NE8N Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IPB051NE8NG		Infineon Technologies	OptiMOS 2 Power-Transistor		Original	PDF

IPB051NE8N Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
DIODE D100 to220 Abstract: No abstract text available Text: IPB051NE8N G IPI05CNE8N G IPP054NE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO 263) 5.1 mΩ ID 100 A • Very low on-resistance R DS(on)	Original	IPB051NE8N IPI05CNE8N IPP054NE8N PG-TO263-3 051NE8N PG-TO262-3 05CNE8N DIODE D100 to220	PDF
051NE8N Abstract: 054NE8N IEC61249-2-21 IPP054NE8N PG-TO220-3 Text: IPB051NE8N G IPI05CNE8N G IPP054NE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO 263) 5.1 mΩ ID 100 A • Very low on-resistance R DS(on)	Original	IPB051NE8N IPI05CNE8N IPP054NE8N IEC61249-2-21 PG-TO263-3 PG-TO262-3 PG-TO220-3 051NE8N 054NE8N IEC61249-2-21 PG-TO220-3	PDF
054NE8N Abstract: 3210 smd marking 051ne8n ipi054n Text: IPB051NE8N G IPI054NE8N G IPP054NE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max 5.1 mΩ ID 100 A • Very low on-resistance R DS(on) • 175 °C operating temperature	Original	IPB051NE8N IPI054NE8N IPP054NE8N PG-TO263-3 051NE8N PG-TO262-3 054NE8N 054NE8N 3210 smd marking 051ne8n ipi054n	PDF
IPP054NE8N Abstract: FX23L-100S-0.5SV Text: IPB051NE8N G IPI05CNE8N G IPP054NE8N G "%&$!"# 2 Power-Transistor Product Summary Features V ;I R 492 ?6= ?@ C>2 =6G6= R - @ ?>2 I. R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E!) ' I; 0- K -&) Z" )( 7 R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[#	Original	IPB051NE8N IPI05CNE8N IPP054NE8N 8976BF6 FX23L-100S-0.5SV	PDF
051ne8n Abstract: 054NE8N 05CNE8N IPB051NE8NG IPP054NE8N PG-TO220-3 IPI05CNE8NG Text: IPB051NE8N G IPI05CNE8N G IPP054NE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO 263) 5.1 mΩ ID 100 A • Very low on-resistance R DS(on)	Original	IPB051NE8N IPI05CNE8N IPP054NE8N PG-TO263-3 PG-TO262-3 PG-TO220-3 051NE8N 051ne8n 054NE8N 05CNE8N IPB051NE8NG PG-TO220-3 IPI05CNE8NG	PDF
051ne8n Abstract: IPP054NE8N PG-TO220-3 Text: IPB051NE8N G IPI05CNE8N G IPP054NE8N G OptiMOS 2 Power-Transistor Product Summary Features V DS 85 V • N-channel, normal level R DS on ,max (TO 263) 5.1 m: ID 100 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature	Original	IPB051NE8N IPI05CNE8N IPP054NE8N PG-TO263-3 PG-TO262-3 PG-TO220-3 051NE8N 051ne8n PG-TO220-3	PDF
S 170 MOSFET TRANSISTOR Abstract: 8203 dual mosfet S 170 MOSFET SOT323 MOSFET P MOSFET SWITCHING FREQUENCY IPS09N03LA P-channel power mosfet SO-8 TDA21102 mosfet all mosfet equivalent book Text: Low Voltage ICs – Discretes: OptiMOS , OptiMOS ®2 Power Management & Supply DC/DC Selection Guide www.infineon.com/power May 2006 Introduction D C / D C C O N V E R S I O N plays a critical role in today’s applications such as desktop and notebook computers, consumer equipment, e.g. DVD players and	Original	B152-H8203-G4-X-7600 S 170 MOSFET TRANSISTOR 8203 dual mosfet S 170 MOSFET SOT323 MOSFET P MOSFET SWITCHING FREQUENCY IPS09N03LA P-channel power mosfet SO-8 TDA21102 mosfet all mosfet equivalent book	PDF
3bs02 Abstract: 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J Text: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Selection Guide www.infineon.com/powermanagement Introduction I n f i n e o n ’ s P o w e r S e mi c o n d u c t o r p h i l o s o p h y is rather	Original	Infineo866-95 B152-H8926-G2-X-7600 NB08-1069 3bs02 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J	PDF