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    IPB036N12N3 G Search Results

    IPB036N12N3 G Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IPB036N12N3 G Infineon Technologies N-Channel MOSFETs (20V - 250V); Package: PG-TO263-7; Package: D2PAK (TO-263); VDS (max): 120.0 V; RDS (on) (max) (@10V): 3.6 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 180.0 A; Original PDF
    IPB036N12N3GATMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 120V 180A TO263-7 Original PDF

    IPB036N12N3 G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    036N12N

    Abstract: IEC61249-2-21 JESD22 IPB036N12N3 G dd-103
    Text: IPB036N12N3 G OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and DC/DC converters • Excellent gate charge x R DS on product (FOM) V DS 120 V R DS(on),max 3.6 mΩ ID 180 A • Very low on-resistance RDS(on) • N-channel, normal level


    Original     		PDF IPB036N12N3 IEC61249-2-21 PG-TO263-7 036N12N 036N12N IEC61249-2-21 JESD22 IPB036N12N3 G dd-103

    036N12N

    Abstract: IPB036N12N3 G JESD22 STH120 IPB036N12N
    Text: IPB036N12N3 G OptiMOSTM3 Power-Transistor Product Summary Features • Ideal for high frequency switching and DC/DC converters • Excellent gate charge x R DS on product (FOM) V DS 120 V R DS(on),max 3.6 mΩ ID 180 A • Very low on-resistance RDS(on) • N-channel, normal level


    Original     		PDF IPB036N12N3 PG-TO263-7 036N12N 036N12N IPB036N12N3 G JESD22 STH120 IPB036N12N

    55B5

    Abstract: IPB036N12N marking eb5 Diode 9H diode 1D marking G9
    Text: IPB036N12N3 G "%&$!"# 3 Power-Transistor Product Summary Features Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4     3 ? >F5BD5BC Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D &  V 9H *( J R 9H"[Z#$YMd +&. Y" I9 )0( 6 Q. 5BI <? G ? > B5C9CD 1>3 5 + 9H"[Z#


    Original     		PDF IPB036N12N3 65AE5 55B5 IPB036N12N marking eb5 Diode 9H diode 1D marking G9

    Untitled

    Abstract: No abstract text available
    Text: IPB036N12N3 G  3 Power-Transistor Product Summary Features Q฀#451<฀6?B฀8978฀6B5AE5>3I฀CG9D389>7฀1>4฀ ฀3?>F5BD5BC Q฀H35<<5>D฀71D5฀381B75฀H฀R 9H"[Z#฀@B?4E3D฀ & V 9H *( J R 9H"[Z#$YMd +&. Y I9 )0( 6 Q฀.5BI฀<?G฀?> B5C9CD1>35฀฀+9H"[Z#


    Original     		PDF IPB036N12N3 381B75à CG9D389 D5CD54 D1B75Dà 931D9? D85BG9C5à

    PX3544

    Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
    Text: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly


    Original     		PDF lead519 B152-H9345-G2-X-7600 PX3544 PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J

    igbt welding machine scheme

    Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
    Text: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and


    Original     		PDF

    TLE4957C

    Abstract: SLE66R35E7 SAK-XC2060M-104F80L AA ESD204 SAF-XC2268M-72F66L AA xc2336 tle7242 TLE5041 2EDL23N06 BTN7970
    Text: Ask Infineon. Get connected with the answers. Infineon offers its toll-free 0800/4001 service hotline as one central number, available 24/7 in English, Mandarin and German. Our global connection service goes way beyond standard switchboard services by offering qualified support on the phone. Call us!


    Original     		PDF