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    IOR MOSFET Search Results

    IOR MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    IOR MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRL2203N equivalent

    Abstract: C564 c562
    Text: PD - 9.1378B International IOR Rectifier IRLI2203N HEXFET Power MOSFET • • • • • • Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS ® Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated


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    PDF 1378B IRLI2203N O-220 C-563 C-564 IRL2203N equivalent C564 c562

    Untitled

    Abstract: No abstract text available
    Text: PD-9.1069 International ioR R ectifier IRF840LC HEXFET Power MOSFET • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced Ciss, Coss, Crss Extremely High Frequency Operation Repetitive Avalanche Rated


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    PDF IRF840LC D-6380 0021b21

    pal 011

    Abstract: Ultra High Voltage Hexfets Pal011 mosfet ir 250 n ne 555 diode
    Text: PD-9.1070 International ioR Rectifier IRFBC40LC HEXFET Power MOSFET • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced Ciss, Coss, Crss Extremely High Frequency Operation Repetitive Avalanche Rated


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    PDF IRFBC40LC po883) 0718t pal 011 Ultra High Voltage Hexfets Pal011 mosfet ir 250 n ne 555 diode

    f7101

    Abstract: MOSFET IRF7101 f-7101 MS-012AA
    Text: SO-8 MS-012AA EXAMPLE: THIS IS AN IRF7101 (MOSFET) ñ ñ YWW ññ INTERNATIONAL RECTIFIER LOGO IOR xxxx O F7101 yyyy DATE CODE (YWW) Y = LAST DIGIT OF THE YEAR WW = WEEK LOT CODE PART NUMBER


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    PDF MS-012AA) IRF7101 F7101 f7101 MOSFET IRF7101 f-7101 MS-012AA

    irf5305

    Abstract: .C36 marking
    Text: International IOR Rectifier PD 9.1385A PRELIMINARY IRF5305 HEXFET Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175PC Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated Voss = -55V RDS on = 0.060


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    PDF IRF5305 O-220 ----25V irf5305 .C36 marking

    IRF3205 equivalent

    Abstract: No abstract text available
    Text: PD - 9.1374A International IOR Rectifier IRFI3205 PRELIMINARY HEXFET Power MOSFET • • • • • • Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated


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    PDF IRFI3205 0D2454T IRF3205 equivalent

    irfp3710

    Abstract: RFPE30
    Text: PD - 9.1490A International IOR Rectifier IRFP3710 PRELIMINARY HEXFET Power MOSFET • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vdss = "100V ^ D S o n = 0.025Î2


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    PDF IRFP3710 O-247 irfp3710 RFPE30

    IRLZ44N equivalent

    Abstract: MARKING CODE 2B5
    Text: PD -9.1498 International IOR Rectifier IRLIZ44N PRELIMINARY HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated


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    PDF IRLIZ44N O-220 IRLZ44N equivalent MARKING CODE 2B5

    IRL3705N

    Abstract: No abstract text available
    Text: P D - 9.1502 International IOR Rectifier IRL3705NS PRELIMINARY HEXFET Power MOSFET • Logic-Level Gate Drive • Surface Mount • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated


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    PDF IRL3705NS package039) IRL3705N

    1RFP150

    Abstract: 441D IRFP150
    Text: International ior Rectifier PD-9.441D IRFP150 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements


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    PDF IRFP150 O-247 T0-220 O-218 1RFP150 441D

    SMD MARKING XL

    Abstract: No abstract text available
    Text: PD - 9.1380A International IOR Rectifier IRLL2705 HEXFET Power MOSFET • • • • • • • Surface Mount Dynamic dv/dt Rating Logic-Level Gate Drive Fast Switching Ease of Paralleling Advanced Process Technology Ultra Low On-Resistance V dss = 55V


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    PDF IRLL2705 OT-223 C-603 C-604 SMD MARKING XL

    C536

    Abstract: DIODE C536 IOR 536 C535 C538 C537 F C535 B C537 DIODE
    Text: PD - 9.1323B International IOR Rectifier IRL3303S/L HEXFET Power MOSFET • • • • • • • Logic-Level Gate Drive Advanced Process Technology Surface Mount IRL3303S Low-profile through-hole (IRL3303L) 175°C OperatingTemperature Fast Switching


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    PDF IRL3303S) IRL3303L) 1323B IRL3303S/L C-538 C536 DIODE C536 IOR 536 C535 C538 C537 F C535 B C537 DIODE

    Untitled

    Abstract: No abstract text available
    Text: I , .• I International PD 9.1402 PRELIMINARY IOR Rectifier IRFR/U5305 HEXFET Power MOSFET • • • • • • Ultra Low On-Resistance Surface Mount IRFR5305 Straight Lead (IRFU5305) Advanced Process Technology Fast Switching Fully Avalanche Rated


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    PDF IRFR/U5305 IRFR5305) IRFU5305) 4B55452 QQ243b2

    5S45S

    Abstract: No abstract text available
    Text: Provisional Data Sheet No. PD 9.1295A International IOR Rectifier IRFY9240CM HEXFET POWER MOSFET P-CHANNEL -200Volt, 0.51Î2 HEXFET Product Summary International Rectifier’s HEXFET technology is the key to its advanced line of power MOSFET transistors.The effi­


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    PDF IRFY9240CM -200Volt, 5545S DD24541 5S45S

    Untitled

    Abstract: No abstract text available
    Text: 4655452 DQmSflM Q4R • INR PD-9.455D International ioR R ectifier _ IRC830 INTERNATIONAL RECTIFIER HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Current Sense Fast Switching Ease of Paralleling Simple Drive Requirements


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    PDF IRC830

    smd diode GW

    Abstract: diode ESM 315 K451
    Text: PD - 9.1647 International IOR Rectifier IRF7523D1 PRELIMINARY FETKY MOSFET and Schottky Diode • Co-packaged HEXFET Power MOSFET and Schottky Diode • N-Channel HEXFET • Low Vp Schottky Rectifier • Generation V T echnology • Micro8 Footprint VDSS =


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    PDF IRF7523D1 Rf7523d1 smd diode GW diode ESM 315 K451

    1RF540

    Abstract: IRF540S 1RF540S smd diode 2ba smd diode JD 103S AN-994 SMD-220 smd marking JD marking AI
    Text: PD-9.898 International ioR Rectifier IRF540S HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling Description


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    PDF IRF540S SMD-220 50KtJ 1RF540 1RF540S smd diode 2ba smd diode JD 103S AN-994 smd marking JD marking AI

    S4BV

    Abstract: irl3103s
    Text: PD -9.1338D International IOR Rectifier IRL3103S PRELIMINARY HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated VDSS = 30V


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    PDF 1338D IRL3103S S4BV irl3103s

    Untitled

    Abstract: No abstract text available
    Text: PD-9.1005 International ioR R ectifier IRF634S HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Description


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    PDF IRF634S SMD-220 SMD-220 D-6380

    Untitled

    Abstract: No abstract text available
    Text: « PD - 9.1378A International IOR Rectifier IRLI2203N PRELIMINARY HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated


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    PDF IRLI2203N 6598C

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1326B International IOR Rectifier IRL2505S PRELIM IN ARY HEXFET Power MOSFET • • • • • • • • Logic-Level Gate Drive Advanced Process Technology Surface Mount Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature


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    PDF 1326B IRL2505S 4A55452

    SD 57A

    Abstract: ior 446h fa57sa50lc max5736 SD57a ir 446h
    Text: PD-9.1650 International IOR Rectifier FA57SA50LC HEXFET Power MOSFET • Fully Isolated Package • Easy to Use and Parallel • Low On-Resistance • Dynamic dv/dt Rating • Fully Avalanche Rated • Simple Drive Requirements • Low Gate Charge Device


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    PDF OT-227 T-227contributeto FA57SA50LC SD 57A ior 446h fa57sa50lc max5736 SD57a ir 446h

    U5305

    Abstract: ior 481 mosfet 476 16q
    Text: I , ,• I International IOR Rectifier PRELIMINARY PD 9.1402 IRFR/U5305 HEXFET Power MOSFET • • • • • • Vdss = "55 V Ultra Low On-Resistance Surface Mount IRFR5305 Straight Lead (IRFU5305) Advanced Process Technology Fast Switching Fully Avalanche Rated


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    PDF IRFR/U5305 IRFR5305) IRFU5305) f-481 EIA-541. U5305 ior 481 mosfet 476 16q

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1360 International Rectifier IOR IRL2703S PRELIM INARY HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated V dss RüS on


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    PDF IRL2703S