IRF 544 N MOSFET
Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no
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International Rectifier IRF520
Abstract: No abstract text available
Text: International i«R Rectifier MÔ55452 0 0 m b 4 4 343 m i N R HEXFET Power MOSFET • • • • • • PD-9.313K IRF520 INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling
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IRF520
O-220
S54S2
International Rectifier IRF520
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Untitled
Abstract: No abstract text available
Text: 4ÛSS4SS G 0 m ti5 0 b47 H I N R PD-9.896 International @sæ]Rectifier IRF520S HEXFET Power MOSFET • • • • • • • INTERNATIONAL RECTIFIER Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature
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IRF520S
0-27Q
SMD-220
SS452
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irf*234 n
Abstract: IRFBE40 IRF540 p-channel MOSFET IRFBG40 irf540 800v irfz24 mosfet IRFCG50 IRFC034 HEXFET Guide international rectifier d10
Text: INTERNATIONAL RECTIFIER 2bE D International S S Rectifier • 4flSS455 OOIQIOO b ■ HEXFET Die T-3J'?0 . Electrical Probe Specifications for N-Channel HEXFET ill Power MOSFET Die Recommended Bond Wire Size Closest Packaged Part Number Die Figure Number 5
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4flSS455
irf*234 n
IRFBE40
IRF540 p-channel MOSFET
IRFBG40
irf540 800v
irfz24 mosfet
IRFCG50
IRFC034
HEXFET Guide
international rectifier d10
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F9530
Abstract: diode C339 IRF9530 C337 W 63 complementary of irf9530 C337 W IRF9530 complementary diode c341 IRF9532 IR 9530
Text: HE 0 I 4A5S452 000 fl5âfl fi | Data Sheet No. PD-9.320F INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER IOR HEXFET TRANSISTORS IRFS530 IRF9531 P-Channel IRFS532 IRFS533 -100 Volt, 0.3 Ohm HEXFET T0-220AB Plastic Package Features: The HEXFET® technology is the key to International Rectifier’s
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T0-220AB
C-341
43S54S2
IRF9530,
IRF9531,
IRF9532,
IRF9533
T-39-21
C-342
F9530
diode C339
IRF9530
C337 W 63
complementary of irf9530
C337 W
IRF9530 complementary
diode c341
IRF9532
IR 9530
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Untitled
Abstract: No abstract text available
Text: International i ^ Reclifier PD91340 IRF520NS preliminary HEXFET Power MOSFET • • • • • • Advanced Process Technology Surface Mount Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D escriptio n Fifth Generation HEXFETs from International Rectifier
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IRF520NS
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1rf634
Abstract: IRFZ25 international rectifier 9509 9374 9313 irf635 IRF71Q 9327
Text: IO R PLASTIC PACKAGE HEXFETs INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER 5bE D 4 Ô SS 4S E O G I D S S S 3 TO-220 Package '- • N-CHANNEL Types Vos V fifl OU Po pulsed max Ü A A W 210 190 120 100 60 56 40 33 150 150 90 90 60 60 36 36 28.0 25.0 14.0
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O-220
IRFZ44
IRFZ45
IRFZ34
IRFZ35
IRFZ24
IRFZ25
IRFZ14
IRFZ15
IRF541
1rf634
international rectifier 9509
9374
9313
irf635
IRF71Q
9327
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irf1010e equivalent
Abstract: irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent
Text: International Rectifier MOSFETs MOSFETs Continued HEXFETª Power MOSFETs Ñ TO-220AB (continued) N-Channel (continued) Mfr.Õs Type IRFZ24N* IRF1010E* IRFZ44E* IRFZ34E* IRFZ14* IRF2807* IRF3710* IRF1310N* IRF540N* IRF530N* IRF520N* IRF510* IRF3415* IRF640N
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O-220AB
O-220
IRFZ24N*
IRFIZ24N
IRFD024
IRF1010E*
IRFI1310N
IRFD014
IRFZ44E*
IRFI540N
irf1010e equivalent
irfp250n equivalent
IRF744 equivalent
IRFP260n equivalent
IRF9540N equivalent
IRF730A equivalent
IRFBE30 equivalent
irfp260n
IRF4905 equivalent
IRFU9120 equivalent
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IRF520 application note
Abstract: IRF52Q Irf520 spice irf522 AN975 A44B irf521
Text: HE D I Data Sheet No. PD-9.313J 40 55 4 5 5 □□00 44 2 2 | T-39-11 INTERNATIONAL RE CT IFIER INTERNATIONAL RECTIFIER I I O R I REPETITIVE AVALANCHE AND dv/dt RATED* LOWER ON STATE RESISTANCE, 175°C OPERATING TEMPERATURE HEXFET TRANSISTORS IRF52Q IRFS21
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T-39-11
IRF52Q
IRFS21
IRFS23
T0-220AB
C-197
IRF520,
IRF521,
IRF522,
IRF523
IRF520 application note
Irf520 spice
irf522
AN975
A44B
irf521
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Untitled
Abstract: No abstract text available
Text: PD-91340A International IÖR Rectifier IRF520NS/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF520NS • Low-profile through-hole (IRF520NL) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated V dss = 100 V
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IRF520NS)
IRF520NL)
PD-91340A
IRF520NS/L
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IRF520NPBF
Abstract: IRF1010 4.5v to 100v input regulator
Text: PD - 94818 IRF520NPbF Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 0.20Ω G Description ID = 9.7A S Fifth Generation HEXFETs from International Rectifier
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IRF520NPbF
O-220
O-220AB.
O-220AB
IRF1010
IRF520NPBF
IRF1010
4.5v to 100v input regulator
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IRF1010
Abstract: IRF520NPBF 4.5v to 100v input regulator
Text: PD - 94818 IRF520NPbF Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 0.20Ω G Description ID = 9.7A S Fifth Generation HEXFETs from International Rectifier
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IRF520NPbF
O-220
O-220AB.
O-220AB
IRF1010
IRF1010
IRF520NPBF
4.5v to 100v input regulator
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IRF1010
Abstract: irf1010 MOSFET
Text: PD - 94818 IRF520NPbF Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 0.20Ω G Description ID = 9.7A S Fifth Generation HEXFETs from International Rectifier
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IRF520NPbF
O-220
O-220AB.
O-220AB
IRF1010
IRF1010
irf1010 MOSFET
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Untitled
Abstract: No abstract text available
Text: PD - 94818 IRF520NPbF HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 0.20Ω G Description ID = 9.7A S Fifth Generation HEXFETs from International Rectifier
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IRF520NPbF
O-220
O-220AB.
O-220AB
IRF1010
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IRFP460Z
Abstract: IRF3205 application IRF3205 equivalent power MOSFET IRFP460z irfp4004 IRF3808 equivalent irfz44v equivalent IRF1405 equivalent IRLL014N IRF3205
Text: Switch and I/O Reliability Report March, 2003 International Rectifier Table Of Contents 1.0 Introduction 2.0 Environmental Stress And Failure Modes 3.0 The Matrix Qualification Philosophy 4.0 Summary Of Long Term Reliability Test 4.1 Transistors 4.1.1 HTRB
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O-220
IRFP460Z
IRF3205 application
IRF3205 equivalent
power MOSFET IRFP460z
irfp4004
IRF3808 equivalent
irfz44v equivalent
IRF1405 equivalent
IRLL014N
IRF3205
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IRF540 n-channel MOSFET
Abstract: GES 9515 irf740,irf840 IRC540 equivalent RTV3140 IRF540 mosfet with maximum VDS 30 V IRF540 p-channel MOSFET IRLC120 AN964 IRFC9140R
Text: I R , „-riJ- L . ,», IGBT, HEXFET, HEXSense and Logic Level Die in t e r n a t io n a l - INTERNATIONAL R E C T I F I E R StE D • QD102tib ? ■ IGBTs, HEXFET, HEXSENSE and LOGIC LEVEL HEXFET DIE ^ - q/-OS~ International Rectifier now support Die and Wafer sales from their European Headquarters at Oxted, England.
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QD102t
IRF540 n-channel MOSFET
GES 9515
irf740,irf840
IRC540 equivalent
RTV3140
IRF540 mosfet with maximum VDS 30 V
IRF540 p-channel MOSFET
IRLC120
AN964
IRFC9140R
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IRF520N
Abstract: specifications Irf520N 7A, 100v fast recovery diode
Text: PD - 91339A IRF520N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.20Ω G Description ID = 9.7A S Fifth Generation HEXFETs from International Rectifier
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1339A
IRF520N
O-220
IRF520N
specifications Irf520N
7A, 100v fast recovery diode
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DIODE d3s 57
Abstract: D3S 57 diode
Text: PD - 9.1362A International TOR Rectifier IRFI 520 N PRELIMINARY HEXFET Power MOSFET • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS D • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated Description
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IRF520N
Abstract: U120 AN-994 IRFR120 IRFR120N IRFU120N
Text: PD - 9.1365 IRFR/U120N PRELIMINARY HEXFET Power MOSFET Surface Mount IRFR120N Straight Lead (IRFU120N) Advanced Process Technology Fast Switching Fully Avalanche Rated VDSS = 100V RDS(on) = 0.21Ω ID = 9.1A Description Fifth Generation HEXFETs from International Rectifier
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IRFR/U120N
IRFR120N)
IRFU120N)
252AA
IRF520N
U120
AN-994
IRFR120
IRFR120N
IRFU120N
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IRF520N
Abstract: specifications Irf520N
Text: PD - 91339A IRF520N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.20Ω G Description ID = 9.7A S Fifth Generation HEXFETs from International Rectifier
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1339A
IRF520N
O-220
IRF520N
specifications Irf520N
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Untitled
Abstract: No abstract text available
Text: PD - 91339A IRF520N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.20Ω G Description ID = 9.7A S Fifth Generation HEXFETs from International Rectifier
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1339A
IRF520N
O-220
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1RF520
Abstract: AVW smd smd ht1 AN-994 IRF520 IRF520S SMD-220 ScansUX1012
Text: PD-9.313K International raR Rectifier IRF520 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements ^ dss - 100 V R DS on “ 0 -2 7 Î2
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IRF520
T0-220
1RF520
AVW smd
smd ht1
AN-994
IRF520S
SMD-220
ScansUX1012
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tt 93 n 08
Abstract: No abstract text available
Text: PD - 9.1365A HEXFET Power MOSFET • • • • • Surface Mount IRFR120N Straight Lead (IRFU120N) Advanced Process Technology Fast Switching Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the
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IRFR120N)
IRFU120N)
tt 93 n 08
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sumida 94V-0
Abstract: inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET
Text: International Rectifier The IGBT SIP & HEXPak Navigator Effective 8 September, EXISTING Products NEW Products UPCOMING Products POTENTIAL Products released to production in last 6-9 months to be released within next 3-4 months no current plans. see bus.mgmt.
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IRFK2D054
IRFK2F054
CPV362M4U
CPV363M4U
CPV364M4U
CPV362M4F
CPV363M4F
CPV364M4F
CPV362M4K
CPV363M4K
sumida 94V-0
inverter using irfz44n
MOSFET IRF9430
IRF7414
irfp460 dc welding circuit diagram
IRFP264 inverter circuits
IRFP450 inverter
Three phase inverter using irfp450 mosfet Diagram
Sumida ul94v-0 inverter
IRF 544 N MOSFET
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