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    F9530

    Abstract: diode C339 IRF9530 C337 W 63 complementary of irf9530 C337 W IRF9530 complementary diode c341 IRF9532 IR 9530
    Text: HE 0 I 4A5S452 000 fl5âfl fi | Data Sheet No. PD-9.320F INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER IOR HEXFET TRANSISTORS IRFS530 IRF9531 P-Channel IRFS532 IRFS533 -100 Volt, 0.3 Ohm HEXFET T0-220AB Plastic Package Features: The HEXFET® technology is the key to International Rectifier’s


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    PDF T0-220AB C-341 43S54S2 IRF9530, IRF9531, IRF9532, IRF9533 T-39-21 C-342 F9530 diode C339 IRF9530 C337 W 63 complementary of irf9530 C337 W IRF9530 complementary diode c341 IRF9532 IR 9530

    2N7268

    Abstract: IRHM7150 IRHM8150 h206 h208 IRHM7150U
    Text: Data Sheet No. PD-9.675A INTERNATIONAL RECTIFIER l I O R REPETITIVE AVALANCHE AND dv/dt RATED IRHM7150 IRHM8150 HEXFET TRANSISTORS N-CHANNEL SN7868 JANSRSN7S68 JANSHSN7S68 MEGA RAD HARD 100 Volt, 0.065Q, MEGA RAD HARD HEXFET Product Summary International Rectifier's MEGA RAD HARD Technology HEXFETs


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    PDF IRHM7150 IRHM815Q IRHM8150 JANSRSN7S68 1x106 1x105 IRHM71500 IRHM7150U 2N7268 h206 h208

    1RFZ34

    Abstract: STM TO-220 marking IRFZ34 IRFZ34 international
    Text: International ioR Rectifier HEXFET Power MOSFET • • • • • 4Û5S452 0Q1577Ö STM « I N R PD-9.509B IRFZ34 bSE D INTERNATIONAL RECTIFIER Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements


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    PDF 5S452 0Q1577Ö IRFZ34 O-220 S5452 1RFZ34 STM TO-220 marking IRFZ34 IRFZ34 international

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet No. PD-9.819A INTERNATIONAL RECTIFIER IO R AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRHN7450 IRHN8450 N-CHANNEL MEGA RAD HARD 500 Volt, 0.45Í2, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability


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    PDF IRHN7450 IRHN8450 1x106 H-333 IRHN7450, IRHN8450 5S452 H-334

    Untitled

    Abstract: No abstract text available
    Text: International BUlRectifier IRGPC50S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT PD - 9.694A Features • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz See Fig. 1 for Current vs. Frequency curve


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    PDF IRGPC50S 400Hz) O-247AC 5S452

    Untitled

    Abstract: No abstract text available
    Text: International [ï^l Rectifier • 1,1551,55 DGl,H* 013 " INR PD9390D IR F9510 HEXFET Power M O S F E T • • • • • • • INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature Fast Switching


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    PDF F9510 -100V

    ST203C

    Abstract: No abstract text available
    Text: Bulletin 125176/A International S Rectifier ST203C.C s e r ie s INVERTER GRADE THYRISTORS Hockey Puk Version Features • M e ta l c a s e w ith c e ra m ic in s u la to r ■ In te rn a tio n a l s ta n d a rd c a s e T 0 -2 0 0 A B A -P U K ■ A ll d iffu s e d d e s ig n


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    PDF 125176/A ST203C. 204AS5452 002730b D-538 DD273DÃ ST203C

    M6SS

    Abstract: No abstract text available
    Text: Bulletin 127094 rev. A 09/97 International IQR Rectifier IRK.L240 S E R IE S FAST RECOVERY DIODES MAGN-A-pak Power Modules Features • Fa st re c o v e ry tim e c h a ra c te ris tic s ■ E le c tric a lly is o la te d b a se p la te ■ In d u s tria l s ta n d a rd p a c k a g e


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    PDF 25-FrequencyCharacteristics M6SS

    wiring VDG 13 relay

    Abstract: IR6000 "international rectifier" ir6000 wiring VDG 14 relay driver injectors 24V 8 pins DIP relay pinout diagram R6000 DDE1363 SS452 D-6380
    Text: r ì Preliminary Data Sheet 6.025 INTERNATIONAL RECTIFIER IO R IR 6 0 0 0 INTELLIGENT HIGH-SIDE □IN/IOS POWER SWITCH Avalanche Rated 60 Volts/1 OOmQ Product Summary General Description The IR6000 is a monolithic, fully self protected high side DMOS switch. Designed primarily for solenoid and


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    PDF IR6000 R6000 IR6000 D-6380 wiring VDG 13 relay "international rectifier" ir6000 wiring VDG 14 relay driver injectors 24V 8 pins DIP relay pinout diagram DDE1363 SS452

    Hirect

    Abstract: IRGPC50U c687
    Text: International ^Rectifier PD - 9.685A IRGPC50U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve Vces = 600V


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    PDF IRGPC50U O-247AC C-692 SS452 Hirect c687

    2N7335

    Abstract: IRFG110 IRFG9110 JANTX2N7335 JANTXV2N7335
    Text: Data Sheet No. PD-9.397E INTERNATIONAL RECTIFIER IÖ R IRFG9110 2N7335 JANTXSN7335 JANTXVSN7335 HEXFET TRANSISTORS 4P CHANNEL POWER MDBFETs 14 L E A D D U A L -IN -L IN E Q U A D C E R A M IC S ID E B R A Z E D PAC KAG E [REF: MIL-S-19500/599] Product Summary


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    PDF IRFG9110 JANTX2N7335 JANTXV2N7335 MIL-S-19500/599] I-243 2N7335 IRFG110 JANTXV2N7335

    Untitled

    Abstract: No abstract text available
    Text: Provisional Data Sheet No. PD - 9.1224B international I@R Rectifier dv/dt R A T E D HEXFET TRANSISTOR IRHM7360SE R E P E T IT IV E A V A L A N C H E A N D N -C H A N N E L S IN G L E E V E N T E F F E C T S E E R A D H A R D 400Volt, 0.20Q, (SEE) RAD HARD HEXFET


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    PDF 1224B IRHM7360SE 400Volt, 4A5S452

    Untitled

    Abstract: No abstract text available
    Text: UNR International Rectifier MflSSMSB 0015030 ATT HEXFET Pow er M O S F E T INTERNATIONAL RECTIFIER PD-9.561C IRL520 Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at V g s =4V & 5V 175°C Operating Temperature Fast Switching


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    PDF IRL520

    TRANSISTOR C483

    Abstract: IRGPH50MD2
    Text: International S Rectifier PD - 9.1047A IRGPH50MD2 Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • V ces — 1200V Short circuit rated -1 0 j s @125°C, VGe= 15V Switching-loss rating includes all "tail" losses


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    PDF IRGPH50MD2 10kHz) O-247AC 5SM52 C-488 TRANSISTOR C483 IRGPH50MD2

    transistor C618

    Abstract: c618 diode c617 transistor
    Text: International jajRectffier_ IRGB420UD2 p d INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE -# .« » UltraFast CoPack IGBT Features V ces = 500V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes


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    PDF IRGB420UD2 O-22QAB transistor C618 c618 diode c617 transistor

    Untitled

    Abstract: No abstract text available
    Text: 4055432 0014722 bb3 • INR International i“R Rectifier PD-9.901 IRF630S INTERNATIONAL RECTIFIER HEXFET Power MOSFET • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements


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    PDF IRF630S SMD-220

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1325A International l R Rectifier IRL2505 PRELIMINARY HEXFET Power MOSFET • • • • • • • Logic-Level Gate Drive Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated


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    PDF IRL2505 4A5S452 GG247bd

    Untitled

    Abstract: No abstract text available
    Text: International S Rectifier PD - 9.1258A IR LM L2803 PRELIMINARY HEXFET Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance N-Channel M O SFET SO T-23 Footprint Low Profile < 1.1 mm Available in Tape and Reel Fast Switching


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    PDF L2803 IRLML2803 4A5S452

    Untitled

    Abstract: No abstract text available
    Text: Bulletin 125153/B International [^Rectifier i s i PHASE CONTROL THYRISTORS r k i s e r i e Stud Version 180A Features • Hermetic glass-metal seal ■ dv/dt > 1000V/|js option ■ International standard case T0-209AB TO-93 ■ Threaded studs UNF 3/4 - 16UNF2A


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    PDF 125153/B T0-209AB 16UNF2A 181RKI D-232 181RKI D-233

    Untitled

    Abstract: No abstract text available
    Text: Bulletin 12092/B International S Rectifier s d 553C.ssol s e r ie s FAST RECOVERY DIODES Hockey Puk Version Features • High pow er FAST recovery diode series ■ 6.0 ps recovery tim e ■ High voltage ratings up to 4500V 560A ■ High current ca p a bility


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    PDF 12092/B SD553C. 19-MaximumTotal

    Untitled

    Abstract: No abstract text available
    Text: PD -9.1677A International IOR Rectifier IRG4BC10UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating up to 80 kHz in hard switching, >200 kHz in resonant mode


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    PDF IRG4BC10UD O-220AB

    IR8200B

    Abstract: No abstract text available
    Text: INTERNATIONAL RECTIFIER b5E D • 4ß55452 QQlfllbS 413 ■ INR Data Sheet No. PD-6.012A INTERNATIONA!. RECTIFIER I O R IR8200B 3A, 5 5 V DMOS H-BRIDGE POWER INTEGRATED CIRCUIT 11-PIN MOLDED SIP General Description Features The IR8200B is a 3A H-Bridge designed for motion


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    PDF IR8200B 11-PIN IR8200B LM3525A 5SM52 QG1S172

    Untitled

    Abstract: No abstract text available
    Text: Il International ü g Rectifier MflSSMSE ÜOm71G TMl • INR IRF624 INTERNATIONAL RECTIFIER HEXFET Power MOSFET • • • • • PD-9.472B Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements bSE ]>


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    PDF Om71G IRF624

    Untitled

    Abstract: No abstract text available
    Text: International IggRectifier P D - 9.1022 IRGPC20F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve


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    PDF IRGPC20F 10kHz) O-247AC