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    INTERFET CORPORATION Search Results

    INTERFET CORPORATION Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

    INTERFET CORPORATION Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Application Papers

    Abstract: No abstract text available
    Text: Databook.fxp 1/13/99 2:10 PM Page H-13 H-13 01/99 Titles of Device Application Papers Abstracts and complete text available from InterFET upon request JFET for Completely Depleted High Resistivity Silicon V. Radeka, P. Rehak, S. Rescia Brookhaven National


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Databook.fxp 1/13/99 2:09 PM Page iv iv 01/99 High-Reliability Process Flows I nterFET Corporation has served the military and industrial highreliability junction field effect transistor market since 1984. There are standard high-reliability processing options available on most


    Original     		PDF MIL-STD-883, MIL-S-19500 dev006 PB-TS-EL01 PB-FT-0000 QB-IN-GN04

    IFND89

    Abstract: No abstract text available
    Text: 04/2009 B-XX IFND89 N-Channel JFET with Integrated Back to Back Diodes PACKAGE: Absolute maximum ratings at TA = 25°C Reverse Gate Source & Gate Drain Voltage Gate Current, IG Continuous Device Power Dissipation Power Derating Operating Junction Temperature, TJ


    Original     		PDF IFND89 SC70-5: IFND89

    IFND89

    Abstract: bvg4 JFET hearing aids amplifiers Diode DR 25 SC70-5 n-channel 600 volts dr 25 diode cgs diode
    Text: 04/2009 B-XX IFND89 N-Channel JFET with Integrated Back to Back Diodes Absolute maximum ratings at TA = 25°C Reverse Gate Source & Gate Drain Voltage Gate Current, IG Continuous Device Power Dissipation Power Derating Operating Junction Temperature, TJ Storage Temperature


    Original     		PDF IFND89 SC70-5: IFND89 bvg4 JFET hearing aids amplifiers Diode DR 25 SC70-5 n-channel 600 volts dr 25 diode cgs diode

    Digital Oscilloscope Preamp

    Abstract: Philips RF PREAMP L6518S 2n5911 2N591 L6518SQ
    Text: LMH6518 LMH6518 900 MHz, Digitally Controlled, Variable Gain Amplifier Literature Number: SNOSB21A LMH6518 900 MHz, Digitally Controlled, Variable Gain Amplifier General Description Features The LMH6518 is a digitally controlled variable gain amplifier whose total gain can be varied from −1.16 dB to 38.8 dB for


    Original     		PDF LMH6518 LMH6518 SNOSB21A Digital Oscilloscope Preamp Philips RF PREAMP L6518S 2n5911 2N591 L6518SQ

    Digital Oscilloscope Preamp

    Abstract: L6518S interfet L6518SQ LMH6518 LMH6518SQ LMH6518SQE LMH6518SQX SQA16A InterFET Corporation
    Text: LMH6518 900 MHz, Digitally Controlled, Variable Gain Amplifier General Description Features The LMH6518 is a digitally controlled variable gain amplifier whose total gain can be varied from −1.16 dB to 38.8 dB for a 40 dB range in 2 dB steps. The −3 dB bandwidth is 900 MHz


    Original     		PDF LMH6518 LMH6518 Digital Oscilloscope Preamp L6518S interfet L6518SQ LMH6518SQ LMH6518SQE LMH6518SQX SQA16A InterFET Corporation

    bpw21 op

    Abstract: 2SK147 ir photodiode amplifier BPW21 fast photodiode amplifier FD1500W low noise ir photodiode amplifier tp 0401 2SK147 equivalent SFH213
    Text: advertisement LT1806: 325MHz Low Noise Rail-to-Rail SOT-23 Op Amp Saves Board Space – Design Note 254 Glen Brisebois The new tiny LT 1806 combines 325MHz gain bandwidth, 3.5nV/√Hz voltage noise, 100µV input offset voltage and rail-to-rail inputs and outputs in a SOT-23 package.


    Original     		PDF LT1806: 325MHz OT-23 LT1806 BPW34B 390kHz ODD45W 170pF bpw21 op 2SK147 ir photodiode amplifier BPW21 fast photodiode amplifier FD1500W low noise ir photodiode amplifier tp 0401 2SK147 equivalent SFH213

    SD5200

    Abstract: SST177 Amplifier k thermocouple texas j177 TRANSISTOR SD5400-2 ALD4201 74HC137 CS5525 CS5526 AN75
    Text: AN75 Application Note Using the CS5525/CS5526 in Multiplexed Applications By Jerome Johnston The CS5525/CS5526 A/D converter is optimized for the measurement of thermocouples. It is designed with a single analog input, but includes four digital output pins to control analog switches and


    Original     		PDF CS5525/CS5526 74HC137 74HC237 CS5525/CS5526 74HC237s. ALD4201 AN75REV2 J177/SST177 SD5200 SST177 Amplifier k thermocouple texas j177 TRANSISTOR SD5400-2 CS5525 CS5526 AN75

    JRC 45600

    Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
    Text: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES


    OCR Scan     		PDF ZOP033 ZOP035 ZOP036 ZOP037 ZOP038 ZOP039 ZOP045 ZOP042 ZOP041 ZOP043 JRC 45600 YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541