ansaldo
Abstract: press-pack igbt igbt 1500v 5500W AGB1200 ANSALDO press pack diode 1500V Ansaldo Trasporti press-pack
Text: ANSALDOBREDA Via N. Lorenzi 8 - I 16152 GENOVA - ITALY Tel. int. +39/ 0 10 6556549 - (0)10 6556488 Fax Int. +39/(0)10 6442510 Tx 270318 ANSUSE I - Ansaldo Trasporti s.p.a. Unita' Semiconduttori PRESS-PACKED IGBT AGB1200 1700 V 1200 A Collector-emitter Voltage
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AGB1200
AGB1200
ansaldo
press-pack igbt
igbt 1500v
5500W
ANSALDO press pack
diode 1500V
Ansaldo Trasporti
press-pack
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Untitled
Abstract: No abstract text available
Text: VSKL300-08PbF www.vishay.com Vishay Semiconductors INT-A-PAK Power Module Thyristor/Diode, 300 A FEATURES • Electrically isolated base plate • 3000 VRMS isolating voltage • Industrial standard package • Simplified mechanical designs, rapid assembly
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VSKL300-08PbF
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VS-VSKL300/08PbF www.vishay.com Vishay Semiconductors INT-A-PAK Power Module Thyristor/Diode, 300 A FEATURES • Electrically isolated base plate • 3000 VRMS isolating voltage • Industrial standard package • Simplified mechanical designs, rapid assembly
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VS-VSKL300/08PbF
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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SCR 2140
Abstract: VSKL300
Text: VSKL300-08PbF Vishay High Power Products INT-A-PAK Power Module Thyristor/Diode, 300 A FEATURES • Electrically isolated base plate • 3000 VRMS isolating voltage RoHS COMPLIANT • Industrial standard package • Simplified mechanical designs, rapid assembly
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VSKL300-08PbF
18-Jul-08
SCR 2140
VSKL300
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SCR 2140
Abstract: E78996 scr thyristor battery charger VSKL300
Text: VSKL300-08PbF Vishay High Power Products INT-A-PAK Power Module Thyristor/Diode, 300 A FEATURES • Electrically isolated base plate • 3000 VRMS isolating voltage • Industrial standard package • Simplified mechanical designs, rapid assembly • High surge capability
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VSKL300-08PbF
E78996
2002/95/EC
214lectual
18-Jul-08
SCR 2140
E78996 scr
thyristor battery charger
VSKL300
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Untitled
Abstract: No abstract text available
Text: Bulletin I27304 01/07 IRK.166, .196, .236.PbF SERIES STANDARD RECOVERY DIODES NEW INT-A-pak Power Modules Features High Voltage Electrically Isolated by DBC Ceramic Al 2O 3 3500 V RMS Isolating Voltage Industrial Standard Package High Surge Capability
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I27304
E78996
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236PB
Abstract: No abstract text available
Text: Bulletin I27304 01/07 IRK.166, .196, .236.PbF SERIES STANDARD RECOVERY DIODES NEW INT-A-pak Power Modules Features High Voltage Electrically Isolated by DBC Ceramic Al 2O 3 3500 V RMS Isolating Voltage Industrial Standard Package High Surge Capability
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I27304
E78996
100merchantability,
12-Mar-07
236PB
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SCR 2140
Abstract: No abstract text available
Text: VSKL300-08PbF Vishay High Power Products INT-A-PAK Power Module Thyristor/Diode, 300 A FEATURES • Electrically isolated base plate • 3000 VRMS isolating voltage • Industrial standard package • Simplified mechanical designs, rapid assembly • High surge capability
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VSKL300-08PbF
E78996
2002/95/EC
11-Mar-11
SCR 2140
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MPW1032
Abstract: MPW1027 MPW1000 MPW1021 MPW1022 MPW1023 MPW1024 MPW1026 MPW1031 MPW1036
Text: TOTAL POWER INT’L MPW1000 25 ~ 30 Watts 2:1 Wide Input Range DC/DC Converters Single Outputs Key Features: . . . . . . . . . High-Efficiency High Power Density 2:1 Input Range I/O Isolation 1500VDC Industry Standard Pinout SMT Technology Short Circuit Protection
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MPW1000
1500VDC
EN55022
MPW1021
MPW1022
MPW1023
MPW1024
MPW1026
MPW1027
MPW1031
MPW1032
MPW1027
MPW1021
MPW1022
MPW1023
MPW1024
MPW1026
MPW1031
MPW1036
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Untitled
Abstract: No abstract text available
Text: Bulletin I27304 01/07 IRK.166, .196, .236.PbF SERIES STANDARD RECOVERY DIODES NEW INT-A-pak Power Modules Features High Voltage Electrically Isolated by DBC Ceramic Al 2O 3 3500 V RMS Isolating Voltage Industrial Standard Package High Surge Capability
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I27304
E78996
12-Mar-07
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IRK E78996 701819-303ac
Abstract: IRK E78996 p432 W08K K196
Text: I27096 rev. C 10/06 IRK. SERIES INT-A-pak ™ Power Modules STANDARD RECOVERY DIODES Features 165 A 195 A 230 A High voltage Electrically isolated base plate 3000 VRMS isolating voltage Industrial standard package Simplified mechanical designs, rapid assembly
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I27096
E78996
IRK E78996 701819-303ac
IRK E78996 p432
W08K
K196
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SFP70N06
Abstract: DSA00102119
Text: SFP70N06 Wisdom Technologies Int’l N-Channel MOSFET Features Low RDS on (0.015Ω )@VGS=10V • Low Gate Charge (Typical 65nC) Low Crss (Typical 150pF) Improved dv/dt Capability 100% Avalanche Tested Maximum Junction Temperature Range (175°C) ■ ■ ■
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SFP70N06
150pF)
O-220
SFP70N06
DSA00102119
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Untitled
Abstract: No abstract text available
Text: VSKL300-08PbF Vishay High Power Products INT-A-PAK Power Module Thyristor/Diode, 300 A FEATURES • Electrically isolated base plate • 3000 VRMS isolating voltage • Industrial standard package • Simplified mechanical designs, rapid assembly • High surge capability
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VSKL300-08PbF
E78996
2002/95/EC
11-Mar-11
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IRK E78996 701819-303ac
Abstract: E78996 datasheet full bridge IRK E78996 IRK E78996 p432 E78996 datasheet bridge High Voltage Busbar IRF E78996 IRK 91 6600k
Text: Bulletin I27096 rev. A 09/97 IRK. SERIES INT-A-pakä Power Modules STANDARD RECOVERY DIODES Features 165 A 195 A 230 A High voltage Electrically isolated base plate 3500 V RMS isolating voltage Industrial standard package Simplified mechanical designs, rapid assembly
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I27096
E78996
IRK E78996 701819-303ac
E78996 datasheet full bridge
IRK E78996
IRK E78996 p432
E78996 datasheet bridge
High Voltage Busbar
IRF E78996
IRK 91
6600k
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VSKD 236
Abstract: vskj 56 9517
Text: VSK.166.PbF, VSK.196.PbF, VSK.236.PbF Series Vishay Semiconductors Standard Recovery Diodes, 165 A to 230 A INT-A-PAK Power Modules FEATURES • High voltage • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage • Industrial standard package
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E78996
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
VSKD 236
vskj 56
9517
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Untitled
Abstract: No abstract text available
Text: VSK.166.PbF, VSK.196.PbF, VSK.236.PbF Series Vishay Semiconductors Standard Recovery Diodes, 165 A to 230 A INT-A-PAK Power Modules FEATURES • High voltage • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage • Industrial standard package
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E78996
2002/95/EC
18-Jul-08
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tp200
Abstract: Thyristor Modules MTC200TS120 MTC200
Text: PRELIMINARY Thyristor Modules INT -A -PAK MTC200TS120/180 Features _International standard package With DBC ceramic base plate Planar passivated chips High surge capability UL recongnition pending _ _ _ VRRM =1200V- 1800V IFAVM =2x200A IFRMS=2x320A
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MTC200TS120/180
2x200A
2x320A
tp200
Thyristor Modules
MTC200TS120
MTC200
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Untitled
Abstract: No abstract text available
Text: VS-VSK.166.PbF, VS-VSK.196.PbF, VS-VSK.236.PbF Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes, 165 A to 230 A INT-A-PAK Power Modules FEATURES • High voltage • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage
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Original
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PDF
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E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: VS-VSK.166.PbF, VS-VSK.196.PbF, VS-VSK.236.PbF Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes, 165 A to 230 A INT-A-PAK Power Modules FEATURES • High voltage • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage
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Original
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PDF
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E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: QBH-126 Amplifier P erform ance Specifications Specifications Min/Max +25 °C Frequency MHz Gain (dB) Gain Flatness (dB) Noise Figure (dB) Power Out (dBm) 3rd Order Int (dBm) 2nd Order Int (dBm) Reverse Isolation (dB) Input VSWR Output VSWR DC Current (mA)
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OCR Scan
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PDF
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QBH-126
E52-1
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Untitled
Abstract: No abstract text available
Text: QBH-119 Amplifier P erform ance Specifications Specifications Min/Max +25 °C Frequency MHz Gain (dB) Gain Flatness (dB) Noise Figure (dB) Power Out (dBm) 3rd Order Int (dBm) 2nd Order Int (dBm) Reverse Isolation (dB) Input VSWR Output VSWR DC Current (mA)
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OCR Scan
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PDF
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QBH-119
E52-1
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Untitled
Abstract: No abstract text available
Text: QB H -102 Amplifier P erform ance Specifications Specifications Min/Max +25 °C Frequency MHz Gain (dB) Gain Flatness (dB) Noise Figure (dB) Power Out (dBm) 3rd Order Int (dBm) 2nd Order Int (dBm) Reverse Isolation (dB) Input VSWR Output VSWR DC Current (mA)
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OCR Scan
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PDF
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E52-1
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QBH-101
Abstract: No abstract text available
Text: QBH-101 Amplifier P e rfo rm a n c e Specifications Specifications Min/Max +25 °C Frequency MHz Gain (dB) Gain Flatness (dB) Noise Figure (dB) Power Out (dBm) 3rd Order Int (dBm) 2nd Order Int (dBm) Reverse Isolation (dB) Input VSWR Output VSWR DC Current (mA)
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OCR Scan
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PDF
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QBH-101
E52-1
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c531 diode
Abstract: diode C531 C532 diode C529 DIODE IRGTIN025M12 C529
Text: International kjrJRectifier PD-9.1166 IRGTIN025M12 Low conduction loss IGBT "HALF-BRIDGE" IGBT INT-A-PAK •Rugged Design .Simple gate-drive .Switching-Loss Rating includes all “tail" losses .Short circuit rated Description IR's advanced IGBT technology is the key
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IRGTIN025M12
4ASS452
100nH
0Q20324
c531 diode
diode C531
C532 diode
C529 DIODE
IRGTIN025M12
C529
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