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    Untitled

    Abstract: No abstract text available
    Text: Amplifiers for infrared detectors C4159/C5185 series C3757-02 Low noise amplifiers for infrared detector InSb, InAs, InGaAs, MCT, PbS, PbSe Accessories Instruction manual Power cable (one end with 4-pin connector for connection to amplifier and the other end unterminated, 2 m) A4372-02


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    PDF C4159/C5185 C3757-02 A4372-02 C4159 C5185 E3620A, E3630A SE-171 KIRD1011E10

    c4159 e

    Abstract: No abstract text available
    Text: Amplifiers for infrared detectors C4159/C5185 series C3757-02 Low noise amplifiers for infrared detector InSb, InAs, InGaAs, MCT, PbS, PbSe Accessories Instruction manual Power cable (one end with 4-pin connector for connection to amplifier and the other end unterminated, 2 m) A4372-02


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    PDF C4159/C5185 C3757-02 A4372-02 C4159 C5185 SE-171 KIRD1011E09 c4159 e

    transistor C4159

    Abstract: C4159 C4159-03 4-Pin HIROSE hr10 Dewar C5185 P3981 C3757-02 C4159-01 C4159-04
    Text: Amplifiers for infrared detectors C4159/C5185 series C3757-02 Low noise amplifiers for infrared detector InSb, InAs, InGaAs, MCT, PbS, PbSe Accessories Instruction manual Power cable (one end with 4-pin connector for connection to amplifier and the other end unterminated, 2 m) A4372-02


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    PDF C4159/C5185 C3757-02 A4372-02 C4159 C5185 E3620A, E3630A SE-171 KIRD1011E11 transistor C4159 C4159-03 4-Pin HIROSE hr10 Dewar P3981 C3757-02 C4159-01 C4159-04

    Untitled

    Abstract: No abstract text available
    Text: Amplifiers for infrared detectors C4159/C5185 series C3757-02 Low noise amplifiers for infrared detector InSb, InAs, InGaAs, MCT, PbS, PbSe Accessories Instruction manual Power cable (one end with 4-pin connector for connection to amplifier and the other end unterminated, 2 m) A4372-02


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    PDF C4159/C5185 C3757-02 A4372-02 C4159 C5185 SE-171 KIRD1011E08

    Untitled

    Abstract: No abstract text available
    Text: Amplifier for infrared detector C4159/C5185 series C3757-02 Low noise amplifiers for infrared detector InSb, InAs, InAsSb, InGaAs, MCT, PbS, PbSe Accessories Instruction manual Power cable (one end with 4-pin connector for connection to amplifier and the other end unterminated, 2 m) A4372-02


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    PDF C4159/C5185 C3757-02 A4372-02 C4159 C5185 E3620A, E3630A SE-171 KIRD1011E13

    Untitled

    Abstract: No abstract text available
    Text: Amplifier for infrared detector C4159/C5185 series C3757-02 Low noise amplifiers for infrared detector InSb, InAs, InAsSb, InGaAs, MCT, PbS, PbSe Accessories Instruction manual Power cable (one end with 4-pin connector for connection to amplifier and the other end unterminated, 2 m) A4372-02


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    PDF C4159/C5185 C3757-02 A4372-02 C4159 C5185 E3620A, E3630A SE-171 KIRD1011E13

    Infrared detectors

    Abstract: dark detector application ,uses and working
    Text: Compound semiconductor photosensors 1 InGaAs/GaAs PIN photodiodes 1-1 Characteristics 1-2 How to use 2 InGaAs APD 2-1 Operating principle 2-2 Characteristics 2-3 How to use CHAPTER 06 8 MCT HgCdTe photovoltaic detectors 8-1 Characteristics 8-2 How to use


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    Selection guide

    Abstract: Infrared detectors P13243-011MA
    Text: Selection guide - March 2015 Infrared Detectors Covering a broad spectral range in the infrared region INFRARED DETECTORS HAMAMATSU PHOTONICS K.K. Infrared detectors Infrared detectors are widely used in diverse field including measurement, analysis, indust r y, c o m m u n i c a t i o n , a g r i c u l tu r e , m e d i c i n e ,


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    PDF KIRD0001E08 Selection guide Infrared detectors P13243-011MA

    Untitled

    Abstract: No abstract text available
    Text: 化合物光半導体 受光素子 1 InGaAs/GaAs PINフォトダイオード 1-1 1-2 特性 使い方 2 InGaAs APD 2-1 2-2 2-3 動作原理 特性 使い方 第 章 6 8 MCT HgCdTe 光起電力素子 8-1 8-2 特性 使い方 9 複合素子 10 オプション


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    metal detector circuit diagram

    Abstract: circuits metal detector HEAT DETECTOR DIAGRAM C3871 power supply C1103 INSB PHOTODIODE on-off valve infrared detector 1/metal detector circuit diagram A4372-05
    Text: INFRARED DETECTOR Infrared detector Accessory Wide lineups of accessories for infrared detection Temperature controller C1103 series C1103 series is a temperature controller designed for thermoelectrically cooled infrared detectors. C1103 series allows easy but accurate


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    PDF C1103 C1103-04 C1103-05 C1103-07 SE-171 KACC1062E04 metal detector circuit diagram circuits metal detector HEAT DETECTOR DIAGRAM C3871 power supply INSB PHOTODIODE on-off valve infrared detector 1/metal detector circuit diagram A4372-05

    METAL DETECTOR circuit for make

    Abstract: metal detector circuit diagram metal detector diagram circuits metal detector to3 HEATSINK C4696 infrared detector infrared detectors A4372-05 C1103
    Text: Accessories for infrared detectors Temperature controllers Heatsinks for TE-cooled detector Chopper, etc. Wide lineups of accessories for infrared detector HAMAMATSU provides temperature controllers, heatsinks for TE-cooled detector, chopper and cables, etc as accessories for infrared


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    PDF A3179 C4159/C5185 C3757-02 C4696) C4696 SE-171 KACC1062E09 METAL DETECTOR circuit for make metal detector circuit diagram metal detector diagram circuits metal detector to3 HEATSINK C4696 infrared detector infrared detectors A4372-05 C1103

    Untitled

    Abstract: No abstract text available
    Text: Accessories for infrared detectors Temperature controllers Heatsinks for TE-cooled detector Chopper, etc. Wide lineups of accessories for infrared detector HAMAMATSU provides temperature controllers, heatsinks for TE-cooled detector, chopper and cables, etc as accessories for infrared detectors.


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    PDF C4696 A3179 C4159/C5185 C3757-02 C4696) SE-171 KACC1062E11

    quadrant detector hgcdte

    Abstract: J15QUAD quadrant photodiode j10quad j16quad quadrant photodiode preamplifier
    Text: J ^ E G zG JUDSON q Figure 29-1 Position S ensor D etector C onfiguration J16PS, J12PS, J10PS Position Sensors A Ge, InAs, or InSb position sensor consists of a single element photodiode with a quadrupole electrode geometry. These devices can provide linear X-Y


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    PDF J16PS, J12PS, J10PS J16QUAD, J10QUAD, J15QUAD UAD-8D6-R02M J16QU AD-8D6-R05M J10QUA quadrant detector hgcdte J15QUAD quadrant photodiode j10quad j16quad quadrant photodiode preamplifier

    thermistor inas

    Abstract: INSB PHOTODIODE 101 thermistor InSb spectral response insb detector preamplifier c4159
    Text: InAs, InSb Photovoltaic Detectors Photovoltaic detectors with high­ speed response and low noise • Long cooling hold time: 8 hours A large capacity glass dewar cooled by liquid nitrogen is used for standard detector package. It allows for 8-hour continuous cooling.


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    PDF KI80A0055EA 0G0470 P394A, P3226-02 P791-11 P3207-04 P4115 K1713-01, K3413-01, P3981-01, thermistor inas INSB PHOTODIODE 101 thermistor InSb spectral response insb detector preamplifier c4159

    photodiode ge

    Abstract: INSB PHOTODIODE HgCdTe J16QUAD-8D6-R02M J16PS 4 quadrant InSb quadrant detector InSb metal detector sensor j10quad
    Text: E G zG J U D S O N * * — — «ï fflb . *V ÌV '#3é ¿.fi, ir Figure 29-2 Example of Position Linearity Figure 29-1 Position Sensor Detector Configuration - J16PS, J12PS, J10PS — '3 Î fc* i l '»ti'*.«'* Po sitio n S en sors A Ge, InAs, or InSb position sensor


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    PDF J16PS, J12PS, J10PS J16QUAD, J10QUAD, J15QUAD J16Quad 10x10 J12PS-8B12-S05M J10PS-M204-S05M photodiode ge INSB PHOTODIODE HgCdTe J16QUAD-8D6-R02M J16PS 4 quadrant InSb quadrant detector InSb metal detector sensor j10quad

    Glossary terms used in this catalog

    Abstract: detector ingaas photodiode InGaAs NEP InSb spectral response GE capacitor CATALOG Semiconductor Radiation Detector
    Text: Glossary of Terms used in This Catalog D ark R esistance: Rd This is the resistance of a photoconductive device PbS, PbSe, MCT etc. in the dark state. D ark Current: Id The dark current is the small current which flows when a reverse voltage is applied to a photovoltaic detector (InGaAs, Ge, InAs, InSb etc.) under


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    B5170

    Abstract: B5170-05 P5172-200 P27S0
    Text: Infrared Detectors Ge Photodiodes Type No. .On.ess etherise notea ftclme Am» Paekag« 1 mm B 1720-02 T O -18 ¥>&ak Ssecfcai «estons# “ te g ' fC>: Sensrtivity U/-au«lnru^th n s V iW ^ i) ip Short Circuit (h o * te , • v m w W & aap8% • m li’ ’


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    PDF B192O-01 B2614-05 B5170-05 3x10s 1x10s P5171 P5172-200 P27S0 K1713 B5170 B5170-05

    APD InGaAs array

    Abstract: Photodiodes Pyroelectric Detectors Image Sensors Photodiode apd amplifier VISIBLE Photodiode Array Detectors INSB PHOTODIODE Avalanche cmos detector H4741
    Text: Selection Guide Types and Applications of Hamamatsu Opto-semiconductors. 2, 3 Si Photodiodes S1226, S1227 Series UV to Visible Light, for Precision Photometry, Suppressed IR Sensitivity 4 S1336, S1337 Series (UV to IR, for Precision Photometry) .4


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    PDF S1226, S1227 S1336, S1337 S2386, S2387 C2719, C6386 H4741, H3651, APD InGaAs array Photodiodes Pyroelectric Detectors Image Sensors Photodiode apd amplifier VISIBLE Photodiode Array Detectors INSB PHOTODIODE Avalanche cmos detector H4741

    Photodiodes

    Abstract: Infrared photodiode preamplifier photodiode preamplifier
    Text: Selection Guide Types and Applications of Hamamatsu O pto-sem , 3 Silicon Photodiodes S1226, S1227 Series UV to visible light, for precision photometry, Suppressed IR Sensitivity 4 S1336, S1337 Series (UV to IR, for precision photom


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    PDF S1226, S1227 S1336, S1337 S2386, S2387 Photodiodes Infrared photodiode preamplifier photodiode preamplifier

    Untitled

    Abstract: No abstract text available
    Text: Infrared Detectors with Built-in Preamplifiers Dewar Types Easy-to-use, high performance de­ vices with the ultimate in responsivity These devices combine a dewar type detector with a matched pream­ plifier into a metal case. Simply by connecting to a DC power supply,


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    PDF P3357-02) P3226-02 P394A, P3207-04 P791-11 P4115 P3981-01, K3413-01, K1713-01, KIRDA0041EA

    Photodiodes

    Abstract: GaAsP Laser Diode PHOTO SENSORS insb diode led uv
    Text: Types and Applications of Hamamatsu Opto-semiconductors Products ' Hiqh fcneigy Particles Si Photodiodes — UV 1— Visible I Hiqti Ene'sy P h /s « i lAJtinai MediCirt liviustrial w ^ u n n g tn rw ra ritc UV Enhanced Si Photodiodes Pollution Anaiv/t's,. ‘¿ pat iroptwlorr,ôtera


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    pyroelectric PZT

    Abstract: No abstract text available
    Text: Construction and Operating Characteristics Infrared radiation, discovered in 1800 by Sir William H erchel, is •QUANTUM TYPE DETECTORS electrom agnetic waves in th e w avelength range extending from Q uantum type detectors feature high detectivity and high-speed


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    PDF KIRDB0114EA KIRDB0115EA KIRDB0116EA KIRDB0117EA pyroelectric PZT

    nitrogen coupling

    Abstract: INSB PHOTODIODE high metal detector all Metal Detector
    Text: Handling Precautions Storage 1 6 Always store the infrared detector in dark places at a room tem­ perature and humidity. Avoid leaving the detector in locations where it would be exposed to sunlight, strong UV or visible light, as this may result in degradation of the detector characteristics.


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    Untitled

    Abstract: No abstract text available
    Text: Glossary of Terms Used in This Catalog Dark R e sista n ce Rd T his is the resistance o f a photoconductive device (PbS. PbSe, M C T etc.) in the dark state. Dark Current (I d ) T he dark current is the sm all current w hich flow s w hen a reverse volt­


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