Infrared detectors
Abstract: dark detector application ,uses and working
Text: Compound semiconductor photosensors 1 InGaAs/GaAs PIN photodiodes 1-1 Characteristics 1-2 How to use 2 InGaAs APD 2-1 Operating principle 2-2 Characteristics 2-3 How to use CHAPTER 06 8 MCT HgCdTe photovoltaic detectors 8-1 Characteristics 8-2 How to use
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Abstract: No abstract text available
Text: 化合物光半導体 受光素子 1 InGaAs/GaAs PINフォトダイオード 1-1 1-2 特性 使い方 2 InGaAs APD 2-1 2-2 2-3 動作原理 特性 使い方 第 章 6 8 MCT HgCdTe 光起電力素子 8-1 8-2 特性 使い方 9 複合素子 10 オプション
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HgCdTe
Abstract: IA-0025 IA-010 IA-020 IS-0025 IS-010 IS-020 IS-030 IS-040 InSb photodetector
Text: NIR-MIR PHOTODETECTOR COMPONENTS EOS offers a complete product line of photodetector components for the 1.0 to 5.5 micron wavelength range. The variety of detectors allows the potential user to achieve optimum performance/price for a given application. The following table is a representative list of our standard configurations. All components can be customized
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IA-0025
HgCdTe
IA-0025
IA-010
IA-020
IS-0025
IS-010
IS-020
IS-030
IS-040
InSb photodetector
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Light Detector laser
Abstract: short distance measurement ir infrared diode
Text: Opto-semiconductors Condensed Catalog HAMAMATSU PHOTONICS K.K. Our unique photonics technology delivers highly sophisticated opto-semiconductors with high-sensitivity and high-speed response. Hamamatsu Photonics has been at the cutting edge of photonics technology for 60 years. In that
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KOTH0001E15
Light Detector laser
short distance measurement ir infrared diode
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Selection guide
Abstract: United Detector Technology PSD
Text: Selection guide - September 2013 Opto-semiconductor Modules Related products and circuits that enable semiconductor elements to operate at peak performance. A broad range of customization is available. HAMAMATSU PHOTONICS K.K. Opto-semiconductor Modules Related products and circuits that enable
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KACC0001E02
Selection guide
United Detector Technology PSD
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Untitled
Abstract: No abstract text available
Text: 2007 Vol.1 NEWS Belgium / Denmark / France / Germany / Italy / Netherlands / North Europe & CIS / 16 models with different spectral response, resolution, sensitivity, etc. Select a model that fits your application 4 MPPC Multi-Pixel Photon Counter 8 10 Gbps ROSA
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Russian diode Transistor
Abstract: LASER DIODE DRIVER ldd-9 Spectra-Physics 476 russian diode High Vacuum Distillation furnace ATC-2430 Spectra-Physics 20 watt laser module breast pump russian diodes Rittal
Text: ATC-SD Home Page High power laser diode manufacturer Most high-tech companies keep their know-how in secret and sell only ready products. We have the opposite strategy. Our main product is know-how. There is equipment and Equipment. We offer you Equipment which is fully adapted for real A3B5
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induction furnace circuit diagram
Abstract: INCOMING RAW MATERIAL INSPECTION REPORT FOR COLD FORGING
Text: THE ELECTROMAGNET Visible Micro Gamma Rays Wavelength Frequency, Hz: 0.1Å X-Rays U.V. Infrared EHF 10Å 100Å 0.1µ 1Å 1µ 10µ 100µ 0.1cm 1cm 3x1019 3x1018 3x1017 3x1016 3x1015 3x1014 3x1013 3x1012 3x1011 3x1 cycles per second VISIBLE SHORT WAVELENGTH
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3x1019
3x1018
3x1017
3x1016
3x1015
3x1014
3x1013
3x1012
3x1011
induction furnace circuit diagram
INCOMING RAW MATERIAL INSPECTION REPORT FOR COLD FORGING
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GDDD117
Abstract: T018 InSb spectral response HgCdTe InSb photodetector detector inas
Text: ELECTRO-OPTICAL SYSTEMS E57T is E M • 3 1 1 3 0 7 0 0 0 0 0 1 1 3 ÔT2 * E O S TWO-COLOR DETECTOR CAPABILITY EOS manuf a c t u r e s a line of s a n d w i c h - t y p e , t w o - c o l o r detector systems. These consist of two detectors, each w i t h a different
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OCR Scan
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D00D113
Gfi70
215-W5-8548
GDDD117
T018
InSb spectral response
HgCdTe
InSb photodetector
detector inas
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SPECTRONICS
Abstract: spx 1404 transistor scr
Text: Introduction Spectronics offers industry’s broadest range of optoelectronic products. They include: •LEDs •Silicon photodetectors Transistor, SCR and 1C •Optically coupled isolators •Transmissive switches • Reflective switches •V/LED and I/LED displays
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APY12
Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Text: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP
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Edition-1978)
Ausgabe-1978)
BS3934
SO-26
OT-114
NS371
APY12
BYY32
ac176
AEY26
BAV77
bby20
BD545B
BAV27
transistor KT 209 M
AF367
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