InSb
Abstract: HW-101A jvc motor H130-8 TO92 hall effect output offset voltages
Text: EMCORE’s Indium Antimonide InSb Hall Device EMCORE InSb Hall Device (Preliminary Information) EMCORE introduces its InSb Hall device designed to provide a costeffective and accurate solution for a wide variety of consumer electronic, automotive and industrial magnetic sensing applications.
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SOT23 hall
Abstract: InSb nj TRANSISTOR High precision bipolar Hall IC solid state switch ic SOLID STATE SWITCH
Text: EMCORE’s Indium Antimonide InSb Hall/IC Precision Switch Preliminary Information - Product Release Scheduled for April, 2000 EMCORE’s InSb Hall/IC is a fully integrated solid state switch, which is turned on and off by a change in magnetic field applied vertically to the surface of the device package. Combining EMCORE’s highly sensitive InSb Hall
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rev01
SOT23 hall
InSb
nj TRANSISTOR
High precision bipolar Hall IC
solid state switch ic
SOLID STATE SWITCH
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Untitled
Abstract: No abstract text available
Text: Technologies GmbH & Co. KG CYTY108A InSb HALL-EFFECT ELEMENT Hall-effect element CYTY108A is made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall-effect principle. It can convert a magnetic flux density signal linearly into voltage
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CYTY108A
CYTY108A
10sec
300g/30sec
200pF,
D-85464
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Untitled
Abstract: No abstract text available
Text: Technologies GmbH & Co. KG CYTY105A InSb HALL-EFFECT ELEMENT Hall-effect element CYTY105A is made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall-effect principle. It can convert a magnetic flux density signal linearly into voltage
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CYTY105A
CYTY105A
10sec
300g/30sec
200pF,
D-85464
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Untitled
Abstract: No abstract text available
Text: Technologies GmbH & Co. KG CYTY302B InSb HALL-EFFECT ELEMENT Hall-effect element CYTY302B is made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall-effect principle. It can convert a magnetic flux density signal linearly into voltage
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CYTY302B
CYTY302B
D-85464
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Untitled
Abstract: No abstract text available
Text: ChenYang Technologies GmbH & Co. KG CYTY SERIES InSb HALL-EFFECT ELEMENTS CYTY series Hall-effect elements are made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall Effect principle. It can convert a magnetic flux density signal linearly into
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CYTY320,
CYTY300B-CS)
CYTY211)
D-85464
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CYSH12AF
Abstract: ssf hall CYSH12 CYTY101A hall ssd HR100 3060S 1000HR sse hall
Text: Technologies GmbH & Co. KG CYSH12AF InSb HALL-EFFECT ELEMENT Hall-effect element CYSH12AF is made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall-effect principle. It can convert a magnetic flux density signal linearly into voltage output. It
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CYSH12AF
CYSH12AF
CYTY101A.
30CYCLE
10sec
300g/30sec
200pF,
D-85464
ssf hall
CYSH12
CYTY101A
hall ssd
HR100
3060S
1000HR
sse hall
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Untitled
Abstract: No abstract text available
Text: Technologies GmbH & Co. KG CYTY108A InSb HALL-EFFECT ELEMENT Hall-effect element CYTY108A is made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall-effect principle. It can convert a magnetic flux density signal linearly into voltage
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CYTY108A
CYTY108A
40DERING
10sec
300g/30sec
200pF,
D-85464
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Untitled
Abstract: No abstract text available
Text: Technologies GmbH & Co. KG CYTY302B InSb HALL-EFFECT ELEMENT Hall-effect element CYTY302B is made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall-effect principle. It can convert a magnetic flux density signal linearly into voltage
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CYTY302B
CYTY302B
40LDERING
10sec
300g/30sec
200pF,
D-85464
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Untitled
Abstract: No abstract text available
Text: Technologies GmbH & Co. KG CYTY300B InSb HALL-EFFECT ELEMENT Hall-effect element CYTY300B is made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall-effect principle. It can convert a magnetic flux density signal linearly into voltage
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CYTY300B
CYTY300B
D-85464
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Untitled
Abstract: No abstract text available
Text: Technologies GmbH & Co. KG CYTY300B InSb HALL-EFFECT ELEMENT Hall-effect element CYTY300B is made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall-effect principle. It can convert a magnetic flux density signal linearly into voltage
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CYTY300B
CYTY300B
D-85464
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Untitled
Abstract: No abstract text available
Text: Technologies GmbH & Co. KG CYTY300B InSb HALL-EFFECT ELEMENT Hall-effect element CYTY300B is made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall-effect principle. It can convert a magnetic flux density signal linearly into voltage
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CYTY300B
CYTY300B
D-85464
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HW-105A
Abstract: No abstract text available
Text: InSb Hall Element HW-105A •High-sensitivity InSb Hall element. •Super mini-mold SMT package fits SOT343 land pattern . •Shipped in packet-tape reel (5000pcs per reel). •Absolute Maximum Ratings Item Symbol Limit Unit Max. Input Current Ic 20 mA Operating Temp. Range
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HW-105A
OT343
5000pcs
HW-105A
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Untitled
Abstract: No abstract text available
Text: ChenYang Technologies GmbH & Co. KG CYTY SERIES InSb HALL-EFFECT ELEMENTS CYTY series Hall-effect elements are made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall Effect principle. It can convert a magnetic flux density signal linearly into
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CYTY108A,
CYTY320,
CYTY300B-CS)
CYTY211)
D-85464
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Untitled
Abstract: No abstract text available
Text: Technologies GmbH & Co. KG CYTY322B InSb HALL-EFFECT ELEMENT Hall-effect element CYTY322B is made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall-effect principle. It can convert a magnetic flux density signal linearly into voltage
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CYTY322B
CYTY322B
40LDERING
10sec
300g/30sec
200pF,
D-85464
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Untitled
Abstract: No abstract text available
Text: Technologies GmbH & Co. KG CYSH12AF InSb HALL-EFFECT ELEMENT Hall-effect element CYSH12AF is made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall-effect principle. It can convert a magnetic flux density signal linearly into voltage output. It
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CYSH12AF
CYSH12AF
CYTY101A.
10sec
300g/30sec
200pF,
D-85464
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HW-104A
Abstract: hw104
Text: InSb Hall Element HW-104A •High-sensitivity InSb Hall element. •SMT package with inserting pin. •Shipped in bulk 500pcs per pack . •Absolute Maximum Ratings Item Symbol Limit Unit Max. Input Current Ic 20 mA Operating Temp. Range Topr. –40 to +110
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HW-104A
500pcs
HW-104A
hw104
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HW-109A
Abstract: HW109A
Text: InSb Hall Element HW-109A •High-sensitivity InSb Hall element. •SMT package with sensing area leaned 45˚. •Shipped in packet-tape reel 5000pcs per reel . •Absolute Maximum Ratings Item Symbol Limit Unit Max. Input Current Ic 20 mA Operating Temp. Range
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HW-109A
5000pcs
274urrent
HW-109A
HW109A
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HW300A
Abstract: HW-300A
Text: InSb Hall Element HW-300A •High-sensitivity InSb Hall element. •DIP package. •Shipped in bulk 500pcs per pack . •Absolute Maximum Ratings Item Symbol Limit Unit Max. Input Current Ic 20 mA Operating Temp. Range Topr. –40 to +110 ˚C Storage Temp. Range
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HW-300A
500pcs
HW300A
HW-300A
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HW-302B
Abstract: hall ic 550 HW302B 302b
Text: InSb Hall Element HW-302B •High-sensitivity InSb Hall element. •Thin SIP package. •Shipped in bulk 500pcs per pack . •Absolute Maximum Ratings Item Symbol Limit Unit Max. Input Current Ic 20 mA Operating Temp. Range Topr. –40 to +110 ˚C Storage Temp. Range
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HW-302B
500pcs
HW-302B
hall ic 550
HW302B
302b
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Untitled
Abstract: No abstract text available
Text: ChenYang Technologies GmbH & Co. KG CYTY SERIES InSb HALL-EFFECT ELEMENTS CYTY series Hall-effect elements are made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall Effect principle. It can convert a magnetic flux density signal linearly into
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RanCYTY108A,
CYTY320,
CYTY108A,
CYTY300B-CS)
CYTY211)
D-85464
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CYSH12AF
Abstract: No abstract text available
Text: Technologies GmbH & Co. KG CYSH12AF InSb HALL-EFFECT ELEMENT Hall-effect element CYSH12AF is made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall-effect principle. It can convert a magnetic flux density signal linearly into voltage output. It
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CYSH12AF
CYSH12AF
CYTY101A.
10sec
300g/30sec
200pF,
D-85464
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HW-101A
Abstract: hw101a hw101
Text: InSb Hall Element HW-101A •High-sensitivity InSb Hall element. •Mini-mold SMT package fits SOT143 land pattern . •Shipped in packet-tape reel (3000pcs per reel). •Absolute Maximum Ratings Item Symbol Limit Unit Max. Input Current Ic 20 mA Operating Temp. Range
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HW-101A
OT143
3000pcs
HW-101A
hw101a
hw101
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SLP-290B-51
Abstract: 00145B SKS100 msg06 SHS361
Text: Trigger Devices Sensors Hall sensors lc max mA Vc max tV) PD (mW) VH (mV) Rio (12) SHS1Ì0 InSb linear 12 - 200 21 to 55 (1 V/1 kG) 500 to 1500 DP4 SHS210 InSb linear 10 - 150 21 to 55 (1 V/1 kG) 500 to 1500 CP4 SHS211 InSb linear 20 - 150 50 10 85 (1 V/1
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SHS210
SHS211
SHS220
SHS230
SHS260
SHS263
SHS264
SHS311
SHS320
SHS330
SLP-290B-51
00145B
SKS100
msg06
SHS361
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