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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Technologies GmbH & Co. KG CYTY322B InSb HALL-EFFECT ELEMENT Hall-effect element CYTY322B is made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall-effect principle. It can convert a magnetic flux density signal linearly into voltage	Original	PDF	CYTY322B CYTY322B 40LDERING 10sec 300g/30sec 200pF, D-85464

Catalog Datasheet

MFG & Type

PDF

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Untitled

Abstract: No abstract text available
Text: Technologies GmbH & Co. KG CYTY322B InSb HALL-EFFECT ELEMENT Hall-effect element CYTY322B is made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall-effect principle. It can convert a magnetic flux density signal linearly into voltage

Original

PDF

CYTY322B CYTY322B 40LDERING 10sec 300g/30sec 200pF, D-85464