Untitled
Abstract: No abstract text available
Text: PRESSURE AND INFRARED INSTRUMENTATION OS540 Infrared Thermometer Laser Sight Model Configurations Ideal Applications: Diesel and Fleet Maintenance, Electrical, Asphalt, Measure Ink and Dryer Temp. Screen Printing , HVAC/R Automotive, In-Process Temperature Measurement, Fire and
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OS540
OS540
102mm
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Untitled
Abstract: No abstract text available
Text: INFRARED OS540 Infrared Thermometer OS540 Ideal Applications: Diesel and Fleet Maintenance, Electrical, Asphalt, Measure Ink and Dryer Temp. Screen Printing , HVAC/R Automotive, In-Process Temperature Measurement, Fire and Safety, Plastics Molding, Marine and RV, Food Safety
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OS540
OS540
675nm
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L8446
Abstract: L8446-04 L8446-06 LLD1010E01 CW laser diode
Text: INFRARED CW LASER DIODE L8446 SERIES Figure1 Radiant Output Power vs. Forward Current Typ. (Tc=25˚c) (Tc=25˚c) PRELIMINARY DATA 100 RELATIVE RADIANT OUTPUT POWER (%) 1.0 0.5 High optical power of 1W under CW operation 80 60 FEATURES High optical power : 1W
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L8446
L8446-04
L8446,
SE-171-41
L8446-06
LLD1010E01
L8446-04
L8446-06
LLD1010E01
CW laser diode
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BPW34 application note
Abstract: No abstract text available
Text: VSMS3700 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 950 nm • High reliability • Angle of half intensity: ϕ = ± 60°
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VSMS3700
VEMT3700
J-STD-020
VSMS3700
AEC-Q101
2002/95/EC
2002/95/EC.
2011/65/EU.
JS709A
BPW34 application note
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lux meter chip
Abstract: IR Diodes BPW41N IR DATA 80085 short distance measurement ir infrared diode wi41g
Text: VSMY1850 Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology FEATURES • Package type: surface mount • Package form: 0805 • Dimensions L x W x H in mm : 2 x 1.25 x 0.85 • Peak wavelength: λp = 850 nm • High reliability
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VSMY1850
J-STD-020
2002/95/EC
2002/96/EC
VSMY1850
2002/95/EC.
2011/65/EU.
JS709A
lux meter chip
IR Diodes
BPW41N IR DATA
80085
short distance measurement ir infrared diode
wi41g
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BPW41 circuit application
Abstract: OSRAM IR emitter
Text: VSMG3700 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 850 nm • High reliability
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VSMG3700
J-STD-020
AEC-Q101
2002/95/EC
2002/96/EC
VSMG3700
2002/95/EC.
2011/65/EU.
JS709A
BPW41 circuit application
OSRAM IR emitter
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BPW34 osram
Abstract: wi41g BPW34 application note
Text: VSMY1850X01 Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology FEATURES • Package type: surface mount • Package form: 0805 • Dimensions L x W x H in mm : 2 x 1.25 x 0.85 • AEC-Q101 qualified • Peak wavelength: p = 850 nm
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VSMY1850X01
AEC-Q101
J-STD-020
2002/95/EC
2002/96/EC
VSMY1850X01
2002/95/EC.
2011/65/EU.
JS709A
BPW34 osram
wi41g
BPW34 application note
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OSRAM IR emitter
Abstract: BPW34 application note solar cell transistor infrared lux meter calibration application luxmeter
Text: VSMG2700 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 830 nm • High reliability
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VSMG2700
J-STD-020
AEC-Q101
2002/95/EC
2002/96/EC
2002/95/EC.
2011/65/EU.
JS709A
OSRAM IR emitter
BPW34 application note
solar cell transistor infrared
lux meter calibration
application luxmeter
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Untitled
Abstract: No abstract text available
Text: KTLP250 Series 8PIN IGBT GATE DRIVE PHOTOCOUPLER cosmo Description Schematic The KTLP250 series consists of an GaAlAs Light emitter diode and an integrated. This unit is 1 8 2 7 3 6 4 5 8-lead DIP package. KTLP250 series is suitable for gate driving circuit of IGBT or power
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KTLP250
2500Vrms
69P51007
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Untitled
Abstract: No abstract text available
Text: KTLP350 Series 8PIN IGBT GATE DRIVE PHOTOCOUPLER cosmo Description Schematic The KTLP350 series consists of an GaAlAs light emitter diode and an integrated. This unit is 1 8 2 7 3 6 4 5 8-lead DIP package. KTLP350 series is suitable for gate driving circuit of IGBT or power
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KTLP350
5000Vrms
69P51008
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BPW34 smd
Abstract: smd resistor 8606 BPW34 application note
Text: VSMF4710 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 870 nm • High reliability
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VSMF4710
J-STD-020
AEC-Q101
2002/95/EC
2002/96/EC
2002/95/EC.
2011/65/EU.
JS709A
BPW34 smd
smd resistor 8606
BPW34 application note
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BPW34 application note
Abstract: APPLICATION NOTE BpW34 lux meter calibration RB94
Text: VSMF4720 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 870 nm • High reliability
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VSMF4720
VSMF4720
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
BPW34 application note
APPLICATION NOTE BpW34
lux meter calibration
RB94
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bpw 75
Abstract: near IR photodiodes with daylight filter BPW 23 nf ir headphone BPW34 application note
Text: VSML3710 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 940 nm • High reliability
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VSML3710
VEMT3700
VSML3710
J-STD-020
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
bpw 75
near IR photodiodes with daylight filter
BPW 23 nf
ir headphone
BPW34 application note
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BPW34 application note
Abstract: APPLICATION NOTE BpW34 BPW41 remote control
Text: VSMF3710 Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 890 nm • High reliability
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VSMF3710
VSMF3710
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
BPW34 application note
APPLICATION NOTE BpW34
BPW41 remote control
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Untitled
Abstract: No abstract text available
Text: O r i Ü c L l C I R o H IC S INTRODUCTION INFRARED-LIGHT-EMITTING DIODES Phototriacs The infrared—light—emitting diode emits radiation in the near infrared region when forward bias current Ip flows through the PN junction. The light output power (Po) is a
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OCR Scan
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Untitled
Abstract: No abstract text available
Text: O K I electronic components 0 LP226 Infrared LED with Collimator Lens GENERAL DESCRIPTION The OLD226 is a high-output GaAlAs infrared light emission micro-diode sealed with collimator lens in a TO-18 metal can package. High uniform ity of light distribusion and collimator lens enable
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LP226
OLD226
b724240
OLD222H
OLD226
7E4E40
2048C
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CLED291A
Abstract: CLED291B CLED291C
Text: 40E 3> FASCO INDS/ SENISYS SMTiTBâ 000131Ö t • I SENI ICEEESai CLED291 Series Aluminum Gallium Arsenide Infrared Emitting Diodes Features Absolute Maximum Ratings Ta = 25°C unless otherwise stated. 880 nm wavelength T-13/< package wide radiation angla
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CLED291
T-13A<
If-20mA
100mA,
CLED291A
CLED291B
CLED291C
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1100C
Abstract: CLED166A CLED166B CLED166C CLED166D CLT506
Text: FASCO INDS/ SENISYS 4DE D 34=1=3730 0DG1314 E M SENI icHzzaaafl CLED166 Series T4UI Gallium Arsenide Infrared Emitting Diodes Features Absolute Maximum Ratings Ta = 25°C unless otherwise stated. • • § • Storage to + 100“C
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CLED166
0DG1314
1100C
CLED166A
CLED166B
CLED166C
CLED166D
CLT506
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Untitled
Abstract: No abstract text available
Text: FASCO INKS/ SENISYS 40E D B 341=1736 000131b b B S E N I CLED191 Series_ Gallium Arsenide Infrared Emitting Diodes Features Absolute Maximum Ratings Ta = 25°C unless otherwise stated. • • • • Storage +100°C
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000131b
CLED191
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0ld222
Abstract: rotary potentiometer with led OPA2048CA
Text: E2P0020-27-: O K I electronic components OLD226 Infrared LED with Collimator Lens GENERAL DESCRIPTION The OLD226 is a high-output GaAlAs infrared light emitting diode sealed with a collimator lens in a T O l 8 metal can package. High uniformity of the light distribution and the collimator lens enable
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E2P0020-27-:
OLD226
OLD226
0LD222
OLD222H
0LD226
0LD226
OPA2048CA)
0ld222
rotary potentiometer with led
OPA2048CA
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Untitled
Abstract: No abstract text available
Text: FASCO INDS/ SENISYS 40E 3> m 34T=i73a 0001316 T El SEN! CLED291 Series Aluminum Gallium Arsenide Infrared Emitting Diodes Features Absolute Maximum Ratings Ta = 25°C unless otherwise stated. • • • • Storage Temperature .to + 100°G
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CLED291
T-13/
100mA,
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quantum dot
Abstract: CLT400 CLED400 CLED400A CLED400B CLED400C
Text: FASCO INKS/ SE NI SY S 40E 34^730 D D G Q 1 3 2 Q fi S E N I i iiraym aii • CLED400 Series Gallium Arsenide Infrared Emitting Diodes 1 X 0 .0 8 5 C2.163 r 0 .0 7 6 C1.933 L DIMENSIONS ARE IN INCHES CHILLINETERSJ 0 .4 2 5 [1 0 ,8 0 ] 0 .3 2 5 C 8 .2 6 Í
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CLED400
quantum dot
CLT400
CLED400A
CLED400B
CLED400C
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c3781
Abstract: CLED191A CLED191B CLED191C CLT590 L004 2s43
Text: * FASCO INDS/ SE N I S Y S 34^730 40E D 000131b hr^SENI IEEEQI3B CLED191 Series m -U Gallium Arsenide Infrared Emitting Diodes Features Absolute M axim um Ratings Ta = 25°C unless otherwise stated. • • • • Storage Temperature. -40°C to +100°C
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CLED191
000131b
T-13/4
c3781
CLED191A
CLED191B
CLED191C
CLT590
L004
2s43
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Untitled
Abstract: No abstract text available
Text: 0.O PT EK Infrared Emitting Diodes Optek remains unchallenged as the industry’s most complete high quality source for infrared emitters. The latest state-of-the-art solution grown epitaxial techniques are used to produce the high quality G aAs and GaAIAs diode material required to make Optek infrared emitting
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