QEB363
Abstract: No abstract text available
Text: QSB363 Subminiature Plastic Silicon Infrared Phototransistor Features Description • NPN Silicon Phototransistor The QSB363 is a silicon phototransistor encapsulated in a black infrared transparent T-3/4 package. ■ T-3/4 2mm Surface Mount Package ■ Medium Wide Beam Angle, 24°
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QSB363
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QEB373
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Infrared Phototransistor
Abstract: c 5802 7402 ic configuration QSB363 QEB363 QEB373 IC 7402
Text: QSB363 Subminiature Plastic Silicon Infrared Phototransistor Features Description • NPN Silicon Phototransistor The QSB363 is a silicon phototransistor encapsulated in a black infrared transparent T-3/4 package. ■ T-3/4 2mm Surface Mount Package ■ Medium Wide Beam Angle, 24°
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QSB363
QSB363
QEB363
QEB373
Infrared Phototransistor
c 5802
7402 ic configuration
QEB373
IC 7402
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QEB363
Abstract: QEB373 QSB363 QSB363C Infrared Phototransistor
Text: QSB363C Subminiature Plastic Silicon Infrared Phototransistor Features Description • NPN Silicon Phototransistor The QSB363 is a silicon phototransistor encapsulated in a clear infrared T-3/4 package. ■ T-3/4 2mm Surface Mount Package ■ Medium Wide Beam Angle, 24°
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QSB363C
QSB363
QEB363
QEB373
QSB363C
QEB373
Infrared Phototransistor
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Untitled
Abstract: No abstract text available
Text: QSB363C Subminiature Plastic Silicon Infrared Phototransistor Features Description • NPN Silicon Phototransistor The QSB363 is a silicon phototransistor encapsulated in a clear infrared T-3/4 package. ■ T-3/4 2mm Surface Mount Package ■ Medium Wide Beam Angle, 24°
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QSB363C
QSB363
QEB363
QEB373
QSB363C
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Untitled
Abstract: No abstract text available
Text: 3.5x2.8mm PHOTOTRANSISTOR Part Number: AA3528P3S Description Features z Mechanically and spectrally matched to the infrared emitting Made with NPN silicon phototransistor chips. LED lamp. z Package : 2000pcs / reel. z Moisture sensitivity level : level 3.
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AA3528P3S
2000pcs
DSAL0864
SEP/01/2012
SAL0864
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QSB363
Abstract: QEB363 QEB373 "infrared phototransistor"
Text: QSB363 Subminiature Plastic Silicon Infrared Phototransistor • Daylight Filter ■ Tape & Reel Option See Tape & Reel Specifications ■ Lead Form Options: Gullwing, Yoke, Z-Bend Features ■ ■ ■ ■ ■ NPN Silicon Phototransistor T-3/4 (2mm) Surface Mount Package
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QSB363
QEB363
QEB373
QSB363
QEB373
"infrared phototransistor"
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7402 ic configuration
Abstract: QSB363
Text: QSB363 Subminiature Plastic Silicon Infrared Phototransistor • Daylight Filter ■ Tape & Reel Option See Tape & Reel Specifications ■ Lead Form Options: Gullwing, Yoke, Z-Bend Features ■ ■ ■ ■ ■ NPN Silicon Phototransistor T-3/4 (2mm) Surface Mount Package
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QSB363
QEB363
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7402 ic configuration
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QEB363
Abstract: QEB373 QSB363C Infrared Phototransistor 01060
Text: QSB363C Subminiature Plastic Silicon Infrared Phototransistor • Tape & Reel Option See Tape & Reel Specifications ■ Lead Form Options: Gullwing, Yoke, Z-Bend Features ■ ■ ■ ■ ■ NPN Silicon Phototransistor T-3/4 (2mm) Surface Mount Package Medium Wide Beam Angle, 24°
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QSB363C
QEB363
QEB373
QSB363C
QEB373
Infrared Phototransistor
01060
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QEB363
Abstract: No abstract text available
Text: QSB363C Subminiature Plastic Silicon Infrared Phototransistor • Tape & Reel Option See Tape & Reel Specifications ■ Lead Form Options: Gullwing, Yoke, Z-Bend Features ■ ■ ■ ■ ■ NPN Silicon Phototransistor T-3/4 (2mm) Surface Mount Package Medium Wide Beam Angle, 24°
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QSB363C
QEB363
QEB373
QSB363
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Untitled
Abstract: No abstract text available
Text: 3.5x2.8 mm INFRARED EMITTING DIODE Part Number: AA3528F3S Features Description z Mechanically and spectrally matched to the phototransistor. F3 Made with Gallium Arsenide Infrared Emitting diodes. z Package : 1500pcs / reel. z Moisture sensitivity level : level 3.
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AA3528F3S
1500pcs
DSAL0863
APR/09/2011
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AA3528F3S
Abstract: smd diode f3
Text: 3.5x2.8 mm INFRARED EMITTING DIODE Part Number: AA3528F3S Features Description z Mechanically and spectrally matched to the phototransistor. F3 Made with Gallium Arsenide Infrared Emitting diodes. z Package : 1500pcs / reel. z Moisture sensitivity level : level 3.
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AA3528F3S
1500pcs
DSAL0863
SEP/06/2010
W2010
AA3528F3S
smd diode f3
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Untitled
Abstract: No abstract text available
Text: 3.5x2.8 mm INFRARED EMITTING DIODE Part Number: AA3528F3S Features Description z Mechanically and spectrally matched to the phototransistor. F3 Made with Gallium Arsenide Infrared Emitting diodes. z Package : 2000pcs / reel. z Moisture sensitivity level : level 3.
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AA3528F3S
2000pcs
DSAL0863
SEP/01/20120863
SEP/01/2012
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Untitled
Abstract: No abstract text available
Text: BPW85 Vishay Semiconductors Silicon NPN Phototransistor Description BPW85 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a T-1 Ø 3 mm clear, plastic package. It is sensitive for visible and near infrared radiation. 20815
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BPW85
BPW85
2002/95/EC
2002/96/EC
BPW85A
BPW85B
BPW85C
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Untitled
Abstract: No abstract text available
Text: BPW85 Vishay Semiconductors Silicon NPN Phototransistor Description BPW85 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a T-1 Ø 3 mm clear, plastic package. It is sensitive for visible and near infrared radiation. 20815
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BPW85
BPW85
2002/95/EC
2002/96/EC
BPW85A
BPW85B
BPW85C
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Untitled
Abstract: No abstract text available
Text: T-1 3/4 5mm INFRARED EMITTING DIODE Part Number: L-7113SF4BT Features Description z Mechanically and spectrally matched to the phototransistor. SF4 Made with Gallium Aluminum Arsenide Infrared Emit- z RoHS compliant. ting diodes. Package Dimensions Notes:
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L-7113SF4BT
DSAE2821
APR/09/2013
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Untitled
Abstract: No abstract text available
Text: T-1 3/4 5mm INFRARED EMITTING DIODE Part Number: L-7113SF4C Features Description z Mechanically and spectrally matched to the phototransistor. SF4 Made with Gallium Aluminum Arsenide Infrared Emit- z RoHS compliant. ting diodes. Package Dimensions Notes:
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L-7113SF4C
DSAB7704
APR/09/2013
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WP7113F3
Abstract: WP7113F3C
Text: T-1 3/4 5mm INFRARED EMITTING DIODE Part Number: WP7113F3C Features Description z MECHANICALLY AND SPECTRALLY MATCHED TO F3 Made with Gallium Arsenide Infrared Emitting diodes. THE PHOTOTRANSISTOR. z WATER CLEAR LENS. z RoHS COMPLIANT. Package Dimensions
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WP7113F3C
DSAF8808
MAY/21/2007
WP7113F3
WP7113F3C
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Untitled
Abstract: No abstract text available
Text: T-1 3/4 5mm INFRARED EMITTING DIODE Part Number: L-7113SF6BT Features Description z Mechanically and spectrally matched to the phototransistor. SF6 Made with Gallium Aluminum Arsenide Infrared Emit- z RoHS compliant. ting diodes. Package Dimensions Notes:
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L-7113SF6BT
DSAE2822
APR/13/2013
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Untitled
Abstract: No abstract text available
Text: T-1 3/4 5mm INFRARED EMITTING DIODE Part Number: L-7113SF6C Features Description z Mechanically and spectrally matched to the phototransistor. SF6 Made with Gallium Aluminum Arsenide Infrared Emit- z RoHS compliant. ting diodes. Package Dimensions Notes:
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L-7113SF6C
DSAD6220
APR/09/2013
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L-51P3C
Abstract: W53SF7BT L51P3C
Text: T-1 3/4 5mm INFRARED EMITTING DIODE W53SF7BT Features Description TO THE L-51P3C PHOTOTRANSISTOR. Emitting diodes. lMECHANICALLY AND SPECTRALLY MATCHED l BOTH WATER CLEAR LENS AND BLUE TRANSPARENT SF7 made with Gallium Aluminum Arsenide infrared LENS AVAILABLE
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W53SF7BT
L-51P3C
DSAD2238
APR/29/2003
W53SF7BT
L51P3C
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Untitled
Abstract: No abstract text available
Text: T-1 3/4 5mm INFRARED EMITTING DIODE Part Number: L-7113SF7BT Features Description z Mechanically and spectrally matched to the phototransistor. SF7 Made with Gallium Aluminum Arsenide Infrared Emit- z Blue transparent lens. ting diodes. z RoHS compliant.
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L-7113SF7BT
DSAE2823
APR/09/2013
1101T
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Untitled
Abstract: No abstract text available
Text: TLP813 TO SH IBA TOSHIBA PHOTO-INTERRUPTER INFRARED LED + PHOTOTRANSISTOR TLP81 3 IMAGE SCANNERS, HANDHELD COPIERS COPIERS, FAX MACHINES PHOTO-ELECTRIC COUNTERS FOR DETECTING VARIOUS OBJECTS The TLP813 photo-interrupter combines a GaAs infrared LED with an Si phototransistor, and is
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TLP813
TLP81
TLP813
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Untitled
Abstract: No abstract text available
Text: Sidelooker Phototransistor TECHNOLOGIES QSE112/113/114 DESCRIPTION The QSE11X family is a silicon phototransistor encapsulated in a wide angle, infrared transparent, dark blue, plastic sidelooker shell package. FEATURES * Tight production distribution with 3:1
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QSE112/113/114
QSE11X
EE113
QEE123
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Untitled
Abstract: No abstract text available
Text: dJUALITY TECHNOLOGIES CORP QUALITY TECHNOLOGIES 27E D • 74tibfiSl Q003541 T PHOTOTRANSISTOR OPTOCOUPLER T -4 1 -8 3 MCT274 PACKAGE DIMENSIONS [f t DESCRIPTION The MCT274 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is
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74tibfiSl
Q003541
MCT274
MCT274
C2090
C2079
MCT9001
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