Untitled
Abstract: No abstract text available
Text: www.Amprobe.com IR-450 Pocket Infrared Thermometer 3-in-1 Infrared Thermometer, Laser Pointer, and Flashlight A must have tool for everyday applications, the Amprobe 3-in-1 Pocket Infrared Thermometer, Laser Pointer, and LED Flashlight offers a uniquely small and convenient
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IR-450
IR-450
877-AMPROBE
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LED740-66-16100
Abstract: 740nm high intensity IR led
Text: LED740-66-16100 TECHNICAL DATA SUPER HIGH POWER INFRARED LED Structure: 16 power LED chips, 4 x 4 parallel array Peak Wavelength: typ. 740 nm Optical Output Power: typ. 450 mW cw @ 1.4 A Package: TO-66 with silicone + epoxy resin 1 = anode 2 = cathode Absolute Maximum Ratings Tc = 25°C
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LED740-66-16100
LED740-66-16100
740nm
high intensity IR led
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BPW16N
Abstract: CQY36N
Text: CQY36N Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : ∅ 1.8 • Peak wavelength: λp = 950 nm • High reliability • Angle of half intensity: ϕ = ± 55°
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CQY36N
BPW16N
2002/95/EC
2002/96/EC
CQY36N
18-Jul-08
BPW16N
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CQY37N
Abstract: 7922 diode BPW17 Infrared Emitting Diode BPW17N
Text: CQY37N Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : ∅ 1.8 • Peak wavelength: λp = 950 nm • High reliability • Angle of half intensity: ϕ = ± 12°
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CQY37N
BPW17N
2002/95/EC
2002/96/EC
CQY37N
18-Jul-08
7922 diode
BPW17
Infrared Emitting Diode
BPW17N
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BPW17N
Abstract: CQY37N
Text: CQY37N Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • Peak wavelength: p = 950 nm • High reliability • Angle of half intensity: = ± 12° • Low forward voltage
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CQY37N
BPW17N
2002/95/EC
2002/96/EC
CQY37N
11-Mar-11
BPW17N
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Untitled
Abstract: No abstract text available
Text: CQY37N Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • Peak wavelength: p = 950 nm • High reliability • Angle of half intensity: = ± 12° • Low forward voltage
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CQY37N
BPW17N
2002/95/EC
2002/96/EC
CQY37N
2002/95/EC.
2011/65/EU.
JS709A
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12109
Abstract: No abstract text available
Text: CQY37N Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • Peak wavelength: p = 950 nm • High reliability • Angle of half intensity: = ± 12° • Low forward voltage
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CQY37N
BPW17N
2002/95/EC
2002/96/EC
CQY37N
950trademarks
2011/65/EU
2002/95/EC.
12109
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Untitled
Abstract: No abstract text available
Text: CQY36N Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • Peak wavelength: p = 950 nm • High reliability • Angle of half intensity: = ± 55°
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CQY36N
BPW16N
2002/95/EC
2002/96/EC
CQY36N
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: CQY36N Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • Peak wavelength: p = 950 nm • High reliability • Angle of half intensity: = ± 55°
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CQY36N
BPW16N
2002/95/EC
2002/96/EC
CQY36N
2002/95/EC.
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: CQY36N Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • Peak wavelength: p = 950 nm • High reliability • Angle of half intensity: = ± 55°
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CQY36N
BPW16N
2002/95/EC
2002/96/EC
CQY36N
2011/65/EU
2002/95/EC.
2011/65/EU.
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TSSF4500
Abstract: No abstract text available
Text: TSSF4500 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero FEATURES • Package type: leaded • Package form: side view • Dimensions L x W x H in mm : 4.5 x 4 x 4.8 • Peak wavelength: λp = 890 nm
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TSSF4500
TSSF4500
18-Jul-08
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TSSF4500
Abstract: No abstract text available
Text: TSSF4500 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero FEATURES • Package type: leaded • Package form: side view • Dimensions L x W x H in mm : 4.5 x 4 x 4.8 • Peak wavelength: λp = 890 nm
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TSSF4500
TSSF4500
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: IR-Lumineszenzdiode 850 nm mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4255 This data sheet is under PCN-revision (OS-PCN-2009-021-A2). Not to be used for design-in. PCN data sheet can be provided on request.
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OS-PCN-2009-021-A2)
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GPLY6724
Abstract: OHLA0687
Text: IR-Lumineszenzdiode 850 nm mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4252 Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Infrarot LED mit sehr hoher Ausgangsleistung
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Untitled
Abstract: No abstract text available
Text: IR-Lumineszenzdiode 850 nm mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4255 Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Infrarot LED mit sehr hoher Ausgangsleistung
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GPLY6880
Abstract: OHLA0687
Text: IR-Lumineszenzdiode 850 nm mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4255 Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Infrarot LED mit sehr hoher Ausgangsleistung
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OSRAM IR emitter
Abstract: infrared temperature measure datasheet LED infrared high power infrared LEd infrared LED 850 nm LED ir led IR LED infrared led 60825-1 IEC 62471 osram
Text: IR-Lumineszenzdiode 850 nm mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4255 Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Infrarot LED mit sehr hoher Ausgangsleistung
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GPLY6724
Abstract: OHLA0687
Text: IR-Lumineszenzdiode 850 nm mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4252 Nicht für Neuentwicklungen / Not for new designs Wesentliche Merkmale Features • Infrarot LED mit sehr hoher Ausgangsleistung
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Q65110A2467
Abstract: GPLY6880
Text: IR-Lumineszenzdiode 850 nm mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4255 Wesentliche Merkmale Features • Infrarot LED mit sehr hoher Ausgangsleistung • Kurze Schaltzeiten • High Power Infrared LED
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Untitled
Abstract: No abstract text available
Text: TSFF5510 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • 21061 Package type: leaded Dimensions: T-1¾ ∅ 5 mm Peak wavelength: λp = 870 nm High reliability
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TSFF5510
2002/95/EC
2002/96/EC
TSFF5510
08-Apr-05
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SFH4255
Abstract: GPLY6880
Text: IR-Lumineszenzdiode 850 nm mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4255 Wesentliche Merkmale Features • Infrarot LED mit sehr hoher Ausgangsleistung • Kurze Schaltzeiten • High Power Infrared LED
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720-SFH4255-Z
4255-Z
SFH4255
GPLY6880
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Untitled
Abstract: No abstract text available
Text: Si PHOTODIODES S6428, S6429, S6430 HAMAMATSU Single color sensors FEATURES • For RGB red, green, and blue detection S6428: for blue (A,p=450 nm) S6429: for green (A.p=550 nm) S6430: for red (A.p=600 nm) • Non-senstivity in infrared region • Plastic packages: (6x8 mm)
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S6428,
S6429,
S6430
S6428:
S6429:
S6430:
S-164
1013E
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Untitled
Abstract: No abstract text available
Text: LED nm Chart Peak Wavelenght Chip Material Typical Forward Voltage @ 20mA Radiation Color 940 G q AIAs 1.2 Infrared 880 GaAIAs/GaAs 1.3 Infrared 850 GaAIAs 2.0 Infrared 830 G q AIAs 1.8 Infrared 697 GaP 2.0 Deep Red 660 G q AIAs 1.8 Ultra Red 650 GaAsP 1.7
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PP506-1
Abstract: pp-506-1 DN304 "Co Sensor" CN106 PP506 PP701 BN202 CN501 KR311
Text: •SU PER INTENSITY VISIBLE LED I INFRARED LED I PHOTO DETECTOR ■ Stanley super-intensity visible and infrared LEDs 660 nm to 925 nm are suitable as light sources for optical comm unications, bar-code readers and sensors. The package of the [ID -311, CD-511 and □□-1011 series used for light sourcing and reception can be easily combined with
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DD-S11
FH1011
DN511
FH511
BN511
NR312
NR403AF
NR513
PP506-1
pp-506-1
DN304
"Co Sensor"
CN106
PP506
PP701
BN202
CN501
KR311
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