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    INFINEON TRANSISTOR MARKING Search Results

    INFINEON TRANSISTOR MARKING Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    INFINEON TRANSISTOR MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BFP720ESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-10-15 RF & Protection Devices Edition 2012-10-15 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BFP720ESD OT343 OT343-PO OT343-FP BFP720ESD: OT323-TP

    Untitled

    Abstract: No abstract text available
    Text: BFP640FESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.2, 2012-09-19 RF & Protection Devices Edition 2012-09-19 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BFP640FESD BFP640FESD:

    RF TRANSISTOR 10GHZ

    Abstract: BFP720F C166 MHz MIPI
    Text: BFP720F SiGe:C Heterojunction Wideband RF Bipolar Transistor Data Sheet Revision 1.0, 2009-03-13 RF & Protection Devices Edition 2009-03-13 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		PDF BFP720F BFP720F: RF TRANSISTOR 10GHZ BFP720F C166 MHz MIPI

    Untitled

    Abstract: No abstract text available
    Text: BFP450 High Linearity Silicon Bipolar RF Transistor Datasheet Revision 1.1, 2012-09-11 RF & Protection Devices Edition 2012-09-11 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		PDF BFP450 OT343 OT343-PO OT343-FP BFP450: OT323-TP

    gummel poon model parameter HBT

    Abstract: 726-BFP640FESDH6327 Germanium Transistor
    Text: BFP640FESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.1, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BFP640FESD BFP640FESD: 726-BFP640FESDH6327 640FESD H6327 gummel poon model parameter HBT Germanium Transistor

    spice gummel

    Abstract: bfp840 Germanium Transistor LNA ku-band
    Text: BFP840ESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.2, 2013-03-28 RF & Protection Devices Edition 2013-03-28 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BFP840ESD OT343 OT343-PO OT343-FP BFP840ESD: OT323-TP spice gummel bfp840 Germanium Transistor LNA ku-band

    BFP840ESD

    Abstract: LNA ku-band bfp840 transistor RF S-parameters
    Text: BFP840ESD Robust low noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-07-11 RF & Protection Devices Edition 2012-07-11 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BFP840ESD OT343 OT343-PO OT343-FP BFP840ESD: OT323-TP BFP840ESD LNA ku-band bfp840 transistor RF S-parameters

    BFP842

    Abstract: BFP842ESD
    Text: BFP842ESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.0, 2012-08-03 RF & Protection Devices Edition 2012-08-03 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BFP842ESD OT343 OT343-PO OT343-FP BFP842ESD: OT323-TP BFP842 BFP842ESD

    RF TRANSISTOR 10GHZ

    Abstract: BFP740ESD NXP Bluetooth IC C166 JESD22-A114 NF50 vxWORKS Germanium Transistor gummel transistor RF S-parameters
    Text: BFP740ESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.0, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BFP740ESD OT343 OT343-PO OT343-FP BFP740ESD: OT323-TP RF TRANSISTOR 10GHZ BFP740ESD NXP Bluetooth IC C166 JESD22-A114 NF50 vxWORKS Germanium Transistor gummel transistor RF S-parameters

    BFP740FESD

    Abstract: gummel poon model parameter HBT C166 JESD22-A114 NF50 2.4ghz lnb Germanium Transistor transistor RF S-parameters infineon RF
    Text: BFP740FESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.1, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BFP740FESD BFP740FESD: BFP740FESD gummel poon model parameter HBT C166 JESD22-A114 NF50 2.4ghz lnb Germanium Transistor transistor RF S-parameters infineon RF

    Untitled

    Abstract: No abstract text available
    Text: BFP720 SiGe:C Heterojunction Wideband RF Bipolar Transistor Data Sheet Revision 1.0, 2009-01-20 RF & Protection Devices Edition 2009-01-20 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		PDF BFP720 OT343-PO OT343 OT343-FP BFP720: OT323-TP

    Untitled

    Abstract: No abstract text available
    Text: BFP640FESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.1, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BFP640FESD BFP640FESD:

    Untitled

    Abstract: No abstract text available
    Text: BFP842ESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.0, 2012-08-03 RF & Protection Devices Edition 2012-08-03 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BFP842ESD 42ESD OT343 OT343-PO OT343-FP BFP842ESD: OT323-TP

    Untitled

    Abstract: No abstract text available
    Text: BFP740FESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.2, 2012-10-11 RF & Protection Devices Edition 2012-10-11 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BFP740FESD BFP740FESD:

    BFP450

    Abstract: marking ANs sdars NF50 AN077 C166
    Text: BFP450 High Linearity Low Noise Si NPN RF Transistor Data Sheet Revision 1.0, 2010-10-22 RF & Protection Devices Edition 2010-10-22 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		PDF BFP450 OT343 OT343-PO OT343-FP BFP450: OT323-TP BFP450 marking ANs sdars NF50 AN077 C166

    Untitled

    Abstract: No abstract text available
    Text: BFR720L3RH Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 2.0, 2012-09-03 RF & Protection Devices Edition 2012-09-03 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		PDF BFR720L3RH

    Untitled

    Abstract: No abstract text available
    Text: BFP750 High Linearity Low Noise SiGe:C NPN RF Transistor Data Sheet Revision 1.0, 2010-10-22 RF & Protection Devices Edition 2010-10-22 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		PDF BFP750 OT343 OT343-PO OT343-FP BFP750: OT323-TP

    BFP650

    Abstract: No abstract text available
    Text: BFP650 High Linearity Low Noise SiGe:C NPN RF Transistor Data Sheet Revision 1.0, 2010-10-22 RF & Protection Devices Edition 2010-10-22 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		PDF BFP650 OT343 OT343-PO OT343-FP BFP650: OT323-TP BFP650

    Untitled

    Abstract: No abstract text available
    Text: BFR843EL3 Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor Data Sheet Revision 1.0, 2014-06-04 RF & Protection Devices Edition 2014-06-04 Published by Infineon Technologies AG 81726 Munich, Germany 2014 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BFR843EL3 TSLP-3-10-PO TSLP-3-10-FP BFR843EL3: TSLP-3-10-TP

    Untitled

    Abstract: No abstract text available
    Text: BFP720F Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-10-25 RF & Protection Devices Edition 2012-10-25 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		PDF BFP720F BFP720F:

    RF TRANSISTOR 10GHZ

    Abstract: bipolar transistor ghz s-parameter tv sirius RF NPN POWER TRANSISTOR C 10-12 GHZ DSP 10 ghz DSP frequency 10 ghz MIPI omnivision RF TRANSISTOR 10GHZ low noise sdars ARM926EJ-S
    Text: BFP720F SiGe:C Heterojunction Wideband RF Bipolar Transistor Data Sheet Revision 1.0, 2009-03-13 Industrial & Multimarket Edition 2009-03-13 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		PDF BFP720F BFP720F: RF TRANSISTOR 10GHZ bipolar transistor ghz s-parameter tv sirius RF NPN POWER TRANSISTOR C 10-12 GHZ DSP 10 ghz DSP frequency 10 ghz MIPI omnivision RF TRANSISTOR 10GHZ low noise sdars ARM926EJ-S

    Germanium Transistor

    Abstract: BFP842
    Text: BFP842ESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2013-04-11 RF & Protection Devices Edition 2013-04-11 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BFP842ESD OT343 OT343-PO OT343-FP BFP842ESD: OT323-TP Germanium Transistor BFP842

    BFP640FESD

    Abstract: MIPI spec C166 JESD22-A114 NF50 X-GOLD RF Bipolar Transistor XPOSYS Germanium Transistor
    Text: BFP640FESD Robust SiGe:C Wideband RF Bipolar Transistor Data Sheet Revision 1.0, 2010-04-08 RF & Protection Devices Edition 2010-04-08 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		PDF BFP640FESD BFP640FESD: BFP640FESD MIPI spec C166 JESD22-A114 NF50 X-GOLD RF Bipolar Transistor XPOSYS Germanium Transistor

    BFP720F

    Abstract: BFP720FESD C166 JESD22-A114 NF50 BFP720 Germanium Transistor spice gummel
    Text: BFP720FESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.1, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BFP720FESD BFP720FESD: BFP720F BFP720FESD C166 JESD22-A114 NF50 BFP720 Germanium Transistor spice gummel