Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    INFINEON MARKING CODE L2 Search Results

    INFINEON MARKING CODE L2 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54LS42/BEA Rochester Electronics LLC 54LS42 - DECODER, BCD-TO-DECIMAL - Dual marked (M38510/30703BEA) Visit Rochester Electronics LLC Buy
    5446/BEA Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) Visit Rochester Electronics LLC Buy
    5447/BEA Rochester Electronics LLC 5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy

    INFINEON MARKING CODE L2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ADM6993

    Abstract: ADM6992 Tx/Fx Media Converter fibre to ethernet converter TS-1000 TS1000 Tx/Fx ethernet switch 100M 4 port
    Text: Product Brief ADM6993 Fiber-to-Fast Ethernet Converters The ADM6993 consists of Fiber to Fast Ethernet converters on a single chip, integrating two 10/100 Mbps MDIX TX/FX transceivers with a two-port 10/100M Ethernet L2 switch controller. Features include an OAM engine for


    Original     		PDF ADM6993 ADM6993 10/100M TS1000 10Base-T/100Base-TX 100Baion B000-H0000-X-X-7600 ADM6992 Tx/Fx Media Converter fibre to ethernet converter TS-1000 Tx/Fx ethernet switch 100M 4 port

    infineon marking L2s

    Abstract: BCR402U 402U BCW66H SC74
    Text: BCR402U LED Driver • Supplies stable bias current even at low battery voltage 4 3 5 • Ideal for stabilizing bias current of LEDs 2 6 1 • Negative temperature coefficient protects LEDs against thermal overload • Suitable for 12V automotive applications


    Original     		PDF BCR402U infineon marking L2s BCR402U 402U BCW66H SC74

    CSC74

    Abstract: No abstract text available
    Text: BCR402U LED Driver • Supplies stable bias current even at low battery voltage 4 3 5 • Ideal for stabilizing bias current of LEDs 2 6 1 • Negative temperature coefficient protects LEDs against thermal overload • Suitable for 12V automotive applications


    Original     		PDF BCR402U CSC74

    infineon marking L2s

    Abstract: CSC74
    Text: BCR402U LED Driver • Supplies stable bias current even at low battery voltage 4 3 5 • Ideal for stabilizing bias current of LEDs 2 6 1 • Negative temperature coefficient protects LEDs against thermal overload • Suitable for 12V automotive applications


    Original     		PDF BCR402U infineon marking L2s CSC74

    BCR402UE6182

    Abstract: infineon marking L2s infineon marking code L2s
    Text: BCR402UE6182 LED Driver Preliminary data • Supplies stable bias current even at low battery voltage 4 3 5 • Ideal for stabilizing bias current of LEDs 2 6 1 • Negative temperature coefficient protects LEDs against thermal overload • Suitable for 12V automotive applications,


    Original     		PDF BCR402UE6182 BCR402UE6182 infineon marking L2s infineon marking code L2s

    infineon marking L2s

    Abstract: infineon marking code L2s CSC74
    Text: BCR402U LED Driver • Supplies stable bias current even at low battery voltage 4 3 5 • Ideal for stabilizing bias current of LEDs 2 6 1 • Negative temperature coefficient protects LEDs against thermal overload • Suitable for 12V automotive applications


    Original     		PDF BCR402U infineon marking L2s infineon marking code L2s CSC74

    marking FC

    Abstract: No abstract text available
    Text: BFR380L3 NPN Silicon RF Transistor Preliminary data  High current capability and low figure for 3 wide dynamic range application  Low voltage operation  Ideal for low phase noise oscillators up to 3.5 GHz 1 2  Low noise figure: 1.1 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR380L3 marking FC

    igbt welding machine scheme

    Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
    Text: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: BFR193L3 NPN Silicon RF Transistor Preliminary data  For low noise, high-gain amplifiers up to 2 GHz 3  For linear broadband amplifiers  fT = 8 GHz 1 F = 1.2 dB at 900 MHz 2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type


    Original     		PDF BFR193L3

    marking FA

    Abstract: No abstract text available
    Text: BFR340L3 NPN Silicon RF Transistor Preliminary data  Low voltage/ Low current operation 3  Transition frequency of 14 GHz  High insertion gain 1  Ideal for low current amplifiers and oscillators 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR340L3 marking FA

    SMD MARKING CODE f2

    Abstract: No abstract text available
    Text: BGA231N7 Silicon Germanium GNSS Low Noise Amplifier Data Sheet Revision 1.0, 2013-01-29 RF & Protection Devices Edition 2013-01-29 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		PDF BGA231N7 SMD MARKING CODE f2

    Untitled

    Abstract: No abstract text available
    Text: BGA231N7 Silicon Germanium GNSS Low Noise Amplifier Data Sheet Revision 1.0, 2013-01-30 RF & Protection Devices Edition 2013-01-30 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		PDF BGA231N7

    marking FA

    Abstract: BFR340T
    Text: BFR340T NPN Silicon RF Transistor* • Low voltage/ low current operation • Transition frequency of 14 GHz 2 3 1 • High insertion gain • Ideal for low current amplifiers and oscillators * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR340T marking FA BFR340T

    Untitled

    Abstract: No abstract text available
    Text: BFR181T NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 2 3 1 • fT = 8 GHz, F = 0.9 dB at 900 MHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR181T

    TRANSISTOR MARKING NK

    Abstract: BCR108T BFR949T SC75 SC79 SCD80 BFR94
    Text: BFR949T NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 2 3 • fT = 9 GHz, F = 1 dB at 1 GHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution!


    Original     		PDF BFR949T TRANSISTOR MARKING NK BCR108T BFR949T SC75 SC79 SCD80 BFR94

    infineon Marking L1

    Abstract: No abstract text available
    Text: BFR380T NPN Silicon RF Transistor* • High current capability and low figure for wide dynamic range application 2 3 1 • Low voltage operation • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz * Short term description


    Original     		PDF BFR380T infineon Marking L1

    ua 722 fc

    Abstract: BCR847BF MARKING rks BFR94
    Text: BFR949F NPN Silicon RF Transistor Preliminary data For low noise, high-gain broadband amplifiers at 2 3 collector currents from 1 mA to 20 mA  fT = 9 GHz 1 F = 1 dB at 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type


    Original     		PDF BFR949F ua 722 fc BCR847BF MARKING rks BFR94

    marking FB

    Abstract: No abstract text available
    Text: BFR360T NPN Silicon RF Transistor* • Low voltage/ low current operation • For low noise amplifiers 2 3 1 • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR360T marking FB

    BCR402U

    Abstract: infineon marking L2s bcr402 402U AN077 AN101 BC817SU BCX68-25 SC74 adjustable current source LED
    Text: BCR402U LED Driver Features • LED drive current of 20mA • Output current adjustable up to 65mA with external resistor 4 3 5 • Supply voltage up to 40V 2 6 • Easy paralleling of drivers to increase current 1 • Low voltage overhead of 1.4V • High current accuracy at supply voltage variation


    Original     		PDF BCR402U 750mW SC-74 BCR402U infineon marking L2s bcr402 402U AN077 AN101 BC817SU BCX68-25 SC74 adjustable current source LED

    Germanium power

    Abstract: No abstract text available
    Text: Data Sheet, Version 1.2, March 2006 BGA615L7 Silicon Germanium GPS Low Noise Amplifier Automotive and Industrial Silicon Discretes N e v e r s t o p t h i n k i n g . Edition 2006-03-27 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München


    Original     		PDF BGA615L7 D-81541 BGA615L7 BGA619 Germanium power

    infineon marking L2

    Abstract: BFR193L3
    Text: BFR193L3 NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 3 1 • fT = 8 GHz, F = 1 dB at 900 MHz 2 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR193L3 infineon marking L2 BFR193L3

    BFR193L3

    Abstract: BFR380L3 marking FC
    Text: BFR380L3 NPN Silicon RF Transistor* • High current capability and low figure for wide dynamic range application 3 1 • Low voltage operation 2 • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz * Short term description


    Original     		PDF BFR380L3 BFR193L3 BFR380L3 marking FC

    BFR949T

    Abstract: MA457 MARKING C6 BFR94
    Text: BFR949T NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 2 3 1 • fT = 9 GHz, F = 1 dB at 1 GHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type BFR949T Marking


    Original     		PDF BFR949T BFR949T MA457 MARKING C6 BFR94

    BFR360T

    Abstract: BCR108T E6327 SC75 TRANSISTOR MARKING NK infineon marking code L2 fbs MARKING TRANSISTOR transistor marking code 325
    Text: BFR360T NPN Silicon RF Transistor 3 Preliminary data  Low voltage/ low current operation  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm 2  Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR360T VPS05996 BFR360T BCR108T E6327 SC75 TRANSISTOR MARKING NK infineon marking code L2 fbs MARKING TRANSISTOR transistor marking code 325