B78310
Abstract: B78310P1583A005 FIN0144-I FIN0145-Q FIN0151-R SIPB 20233 N198 MH323 epcos
Text: ISDN Transformers EF 16 AC/DC Converter B78310P1583A005 Application 24 max. • Matched to Infineon SIPB 20233 Features ■ According to EN 60950: FRAME5.5 16,4 max. 20 max. 4,4 max. Marking ■ Manufacturer, middle block of ordering code, date code Packing
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B78310P1583A005
FIN0144-I
04-01\ISDN
FIN0151-R
FIN0145-Q
B78310
B78310P1583A005
FIN0144-I
FIN0145-Q
FIN0151-R
SIPB 20233
N198
MH323
epcos
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MARKING SMD IC CODE
Abstract: Motorola transistor smd marking codes PSB 21493 Motorola semiconductor smd marking codes MARKING SMD IC CODE 10 pin PEB 22622 SOCRATES ef 16 transformer ic SMD MARKING CODE ad 5.9 PEF 22622 EPCOS B82793
Text: Inductors for Telecommunications Data Sheet Collection 2002 Inductors for Telecommunications The race on the digital information highway is already underway. Growing data traffic volumes are demanding increasingly higher transmission rates. And multimedia services, such as radio and television on the Internet, audio and video streaming, videoconferencing, video-on-demand, e-commerce, etc. require data speeds that far outstrip the rates used by analog technology. Only digital
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3bs02
Abstract: 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J
Text: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Selection Guide www.infineon.com/powermanagement Introduction I n f i n e o n ’ s P o w e r S e mi c o n d u c t o r p h i l o s o p h y is rather
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Infineo866-95
B152-H8926-G2-X-7600
NB08-1069
3bs02
2bs01
08P06P
TDA 16888
ICE2pcs02
tda16846
ICE3B1565J
mosfet 18p06p
TDA4605
ICE3B0365J
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Untitled
Abstract: No abstract text available
Text: BCR401U LED Driver • Supplies stable bias current even at low battery voltage • Ideal for stabilizing bias current of LEDs 4 3 5 • Negative temperature coefficient protects 2 6 1 LEDs against thermal overload • Suitable for 12 V automotive applications
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BCR401U
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BCR401U
Abstract: BCW66H SC74
Text: BCR401U LED Driver • Supplies stable bias current even at low battery voltage • Ideal for stabilizing bias current of LEDs 4 3 5 • Negative temperature coefficient protects 2 6 1 LEDs against thermal overload • Suitable for 12 V automotive applications
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BCR401U
BCR401U
BCW66H
SC74
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LNA marking CODE R0
Abstract: No abstract text available
Text: BGA715N7 Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems GNSS Data Sheet Revision 1.0, 2013-01-29 Preliminary RF & Protection Devices Edition 2013-01-29 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG
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BGA715N7
LNA marking CODE R0
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marking FC
Abstract: No abstract text available
Text: BFR380L3 NPN Silicon RF Transistor Preliminary data High current capability and low figure for 3 wide dynamic range application Low voltage operation Ideal for low phase noise oscillators up to 3.5 GHz 1 2 Low noise figure: 1.1 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFR380L3
marking FC
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igbt welding machine scheme
Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
Text: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and
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Untitled
Abstract: No abstract text available
Text: BFR193L3 NPN Silicon RF Transistor Preliminary data For low noise, high-gain amplifiers up to 2 GHz 3 For linear broadband amplifiers fT = 8 GHz 1 F = 1.2 dB at 900 MHz 2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type
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BFR193L3
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marking FA
Abstract: No abstract text available
Text: BFR340L3 NPN Silicon RF Transistor Preliminary data Low voltage/ Low current operation 3 Transition frequency of 14 GHz High insertion gain 1 Ideal for low current amplifiers and oscillators 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFR340L3
marking FA
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SMD MARKING CODE f2
Abstract: No abstract text available
Text: BGA231N7 Silicon Germanium GNSS Low Noise Amplifier Data Sheet Revision 1.0, 2013-01-29 RF & Protection Devices Edition 2013-01-29 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
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BGA231N7
SMD MARKING CODE f2
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Untitled
Abstract: No abstract text available
Text: Electronic Component Distributor. Source:Infineon Technologies P.N:BGA524N6E6327XTSA1 Desc:IC AMP SI-MMIC Web:http://www.hotenda.cn E-mail:sales@hotenda.cn Phone: +86 075583794354 BGA524N6 Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems (GNSS)
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BGA524N6E6327XTSA1
BGA524N6
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Untitled
Abstract: No abstract text available
Text: BGA231N7 Silicon Germanium GNSS Low Noise Amplifier Data Sheet Revision 1.0, 2013-01-30 RF & Protection Devices Edition 2013-01-30 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
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BGA231N7
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marking FA
Abstract: BFR340T
Text: BFR340T NPN Silicon RF Transistor* • Low voltage/ low current operation • Transition frequency of 14 GHz 2 3 1 • High insertion gain • Ideal for low current amplifiers and oscillators * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!
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BFR340T
marking FA
BFR340T
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Untitled
Abstract: No abstract text available
Text: BFR183T NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 2 3 1 • fT = 8 GHz, F = 0.9 dB at 900 MHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!
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BFR183T
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TRANSISTOR MARKING NK
Abstract: BCR108T BFR949T SC75 SC79 SCD80 BFR94
Text: BFR949T NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 2 3 • fT = 9 GHz, F = 1 dB at 1 GHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution!
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BFR949T
TRANSISTOR MARKING NK
BCR108T
BFR949T
SC75
SC79
SCD80
BFR94
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infineon Marking L1
Abstract: No abstract text available
Text: BFR380T NPN Silicon RF Transistor* • High current capability and low figure for wide dynamic range application 2 3 1 • Low voltage operation • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz * Short term description
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BFR380T
infineon Marking L1
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ua 722 fc
Abstract: BCR847BF MARKING rks BFR94
Text: BFR949F NPN Silicon RF Transistor Preliminary data For low noise, high-gain broadband amplifiers at 2 3 collector currents from 1 mA to 20 mA fT = 9 GHz 1 F = 1 dB at 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type
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BFR949F
ua 722 fc
BCR847BF
MARKING rks
BFR94
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marking FB
Abstract: No abstract text available
Text: BFR360T NPN Silicon RF Transistor* • Low voltage/ low current operation • For low noise amplifiers 2 3 1 • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!
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BFR360T
marking FB
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Germanium power
Abstract: No abstract text available
Text: Data Sheet, Version 1.2, March 2006 BGA615L7 Silicon Germanium GPS Low Noise Amplifier Automotive and Industrial Silicon Discretes N e v e r s t o p t h i n k i n g . Edition 2006-03-27 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München
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BGA615L7
D-81541
BGA615L7
BGA619
Germanium power
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infineon marking L2
Abstract: BFR193L3
Text: BFR193L3 NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 3 1 • fT = 8 GHz, F = 1 dB at 900 MHz 2 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!
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BFR193L3
infineon marking L2
BFR193L3
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BFR193L3
Abstract: BFR380L3 marking FC
Text: BFR380L3 NPN Silicon RF Transistor* • High current capability and low figure for wide dynamic range application 3 1 • Low voltage operation 2 • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz * Short term description
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BFR380L3
BFR193L3
BFR380L3
marking FC
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BFR949T
Abstract: MA457 MARKING C6 BFR94
Text: BFR949T NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 2 3 1 • fT = 9 GHz, F = 1 dB at 1 GHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type BFR949T Marking
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BFR949T
BFR949T
MA457
MARKING C6
BFR94
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BFR360T
Abstract: BCR108T E6327 SC75 TRANSISTOR MARKING NK infineon marking code L2 fbs MARKING TRANSISTOR transistor marking code 325
Text: BFR360T NPN Silicon RF Transistor 3 Preliminary data Low voltage/ low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm 2 Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFR360T
VPS05996
BFR360T
BCR108T
E6327
SC75
TRANSISTOR MARKING NK
infineon marking code L2
fbs MARKING TRANSISTOR
transistor marking code 325
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