infineon power cycling igbt3
Abstract: IGBT4 snap-off diode infineon igbt3 1200v infineon power cycling curves infineon igbt4 1200v Measurement of stray inductance for IGBT 2003N igbt simulation IGBT2
Text: 1200V IGBT4 -High Power- a new Technology Generation with Optimized Characteristics for High Current Modules M. Bäßler1, P.Kanschat1, F.Umbach2, C. Schaeffer3 1 Infineon Technologies AG, Max Planck Str.5, D-59581 Warstein Germany, Tel +49-2902-764-2290,
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D-59581
200V-Trench-
1998-Kyoto
2003N
00V-IGBT³
2004-N
infineon power cycling igbt3
IGBT4
snap-off diode
infineon igbt3 1200v
infineon power cycling curves
infineon igbt4 1200v
Measurement of stray inductance for IGBT
igbt simulation
IGBT2
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FS300R12OE4P
Abstract: FS450R12OE4P FP06R12W1T4 F3L400R12PT4 bt 1690 scr fp150r07n3e4 F3L300R12PT4 Eupec thyristors catalog FF150R12RT4 Dz800S17ke3
Text: Short Form Catalog 2012 High Power Semiconductors for Industrial Applications www.infineon.com/highpower Auch mit dem KuKa Kurzkatalog 2012 bieten wir Ihnen wieder einen Überblick über dieses Spektrum mit vielen Details. Durch ständigen Dialog mit unseren Kunden haben wir auch in
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igbt infineon
Abstract: Easy-750 The field stop IGBT FS IGBT infineon igbt reliability IGBT inverter design by microcontroller A-9500 infineon igbt die 1200V igbt3 igbt2 infineon infineon igbt3 rg easypim igbt
Text: 600 V IGBT³-Technology in New Low Cost Modules for Consumer Drives Applications P. Kanschat1, T. Stolze1, T. Passe1, H. Rüthing2, F. Umbach2, O. Hellmund3 1 eupec GmbH, Max-Planck-Str. 5, D-59581 Warstein, Germany Infineon Technologies AG, St. Martin-Str. 76, D-81541 München, Germany
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D-59581
D-81541
Easy750
6ED004E06"
igbt infineon
Easy-750
The field stop IGBT FS IGBT
infineon igbt reliability
IGBT inverter design by microcontroller
A-9500
infineon igbt die 1200V
igbt3 igbt2 infineon
infineon igbt3 rg
easypim igbt
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6.5kV IGBT
Abstract: 6.5kV IGBT loss igbt 6.5kv igbt3 igbt2 infineon L280N A-9500 igbt2 infineon infineon igbt3 ohm HIGH VOLTAGE DIODE 3.3kv 3.3kv diode
Text: 6.5kV IGBT and FWD with Trench and VLD Technology for reduced Losses and high dynamic Ruggedness 1 2) 2) 3) 3) Thomas Duetemeyer , Josef-Georg Bauer , Elmar Falck , Carsten Schaeffer , G. Schmidt , 1) Burkhard Stemmer , 1 Infineon Technologies AG, Max-Planck-Straße 5, D-59581 Warstein Germany
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D-59581
D-85579
6.5kV IGBT
6.5kV IGBT loss
igbt 6.5kv
igbt3 igbt2 infineon
L280N
A-9500
igbt2 infineon
infineon igbt3 ohm
HIGH VOLTAGE DIODE 3.3kv
3.3kv diode
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3rd Generation of 1200V IGBT Modules
Abstract: transorb 200v transorb diode igbt failure infineon technologies formerly siemens siemens igbt infineon igbt3 1200v IGBT infineon IGBT structure infineon igbt3 ohm
Text: 3rd Generation of 1200V IGBT Modules M. Hierholzer, Th. Laska, M. Münzer, F. Pfirsch, C. Schäffer, Th. Schmidt IGBT-modules are the most frequently used semiconductors for power applications. The markets demand for higher power integration in one module is limited by the chip losses and the housings
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IGBT DRIVER SCHEMATIC chip
Abstract: The field stop IGBT FS IGBT infineon igbt3 1200v IGBT3 infineon IGBT DRIVER SCHEMATIC AN2003-03 igbt3 rg EICEDRIVER 4kA IGBT IGBT CHIP 1700V
Text: APPLICATION NOTE Seite 1 von 6 Datum:2003-04-08 AN-Nummer: AN2003-03 Switching behavior and optimal driving of IGBT3 modules 1. Chip Technology The IGBT chip of the third generation IGBT3 has a trench structure and combines the advantages of PT and NPT technologies thanks to an additional n-doped layer, known as the Field Stop (FS) layer, within the NPT
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AN2003-03
2ED300C17-S
IGBT DRIVER SCHEMATIC chip
The field stop IGBT FS IGBT
infineon igbt3 1200v
IGBT3 infineon
IGBT DRIVER SCHEMATIC
AN2003-03
igbt3 rg
EICEDRIVER
4kA IGBT
IGBT CHIP 1700V
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Untitled
Abstract: No abstract text available
Text: APTCV60HM45RT3G Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full bridge + rectifier bridge CoolMOS & Trench + Field Stop IGBT3 Power Module CoolMOS Q2, Q4: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C Application • Solar converter
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APTCV60HM45RT3G
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Untitled
Abstract: No abstract text available
Text: APTCV60HM45RT3G Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full bridge + rectifier bridge CoolMOS & Trench + Field Stop IGBT3 Power Module CoolMOS Q2, Q4: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C Application • Solar converter
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APTCV60HM45RT3G
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IGD515EI
Abstract: IGBT Power Module siemens ag FS450R17KE3 FF400R17KE3 igbt 1200v 150a trench field stop ECONOPACK FF800R17KE3 FF300R17KE3 FZ3600R17KE3 FZ400R17KE3
Text: 1700V Trench IGBT Modules * R. Mallwitz, R. Tschirbs , M. Pfaffenlehner, A. Mauder (*) (*) (*) (*) , C. Schaeffer (*) eupec GmbH, Max-Planck Straße 5, D-59581 Warstein-Belecke Infineon Technologies AG, Balanstraße 73, D-81541 Munich Infineon Technologies AG, Siemensstraße 2, A-9500 Villach
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D-59581
D-81541
IGD515EI
IGBT Power Module siemens ag
FS450R17KE3
FF400R17KE3
igbt 1200v 150a trench field stop
ECONOPACK
FF800R17KE3
FF300R17KE3
FZ3600R17KE3
FZ400R17KE3
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Untitled
Abstract: No abstract text available
Text: APTCV60HM70RT3G Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full bridge + rectifier bridge CoolMOS & Trench + Field Stop IGBT3 Power Module CoolMOS Q2, Q4: VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C Application • Solar converter
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APTCV60HM70RT3G
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Untitled
Abstract: No abstract text available
Text: APTCV50H60T3G Full - Bridge NPT & Trench + Field Stop IGBT3 Power module 13 14 Q3 • Solar converter CR3 18 11 19 10 22 7 23 8 Q2 Q4 26 4 27 3 29 31 30 CoolMOS Q2, Q4: VCES = 600V ; IC = 49A @ Tc = 25°C Application Q1 CR1 Trench & Field Stop IGBT3 Q1, Q3:
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APTCV50H60T3G
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Untitled
Abstract: No abstract text available
Text: SIGC186T170R3E IGBT3 Power Chip Features: • 1700V Trench & Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC186T170R3E VCE IC 1700V 150A This chip is used for: • power modules
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SIGC186T170R3E
L7791T,
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tsc 1003
Abstract: No abstract text available
Text: SIGC101T170R3E IGBT3 Power Chip Features: • 1700V Trench & Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling This chip is used for: • power modules C Applications: • drives
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SIGC101T170R3E
L7771T,
tsc 1003
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Untitled
Abstract: No abstract text available
Text: IGC82T170S8RM IGBT3 Power Chip Features: • 1700V Trench + Field stop technology • low switching losses • soft turn off • positive temperature coefficient • easy paralleling This chip is used for: • power modules C Applications: • drives G Chip Type
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IGC82T170S8RM
L7763O,
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Untitled
Abstract: No abstract text available
Text: SIGC12T120E IGBT3 Power Chip Features: • 1200V Trench + Field Stop technology low turn-off losses short tail current positive temperature coefficient easy paralleling This chip is used for: power modules C Applications: drives G Chip Type
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SIGC12T120E
L7621M,
L7621T,
L7621E,
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Untitled
Abstract: No abstract text available
Text: APTCV60HM70RT3G Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full bridge + rectifier bridge CoolMOS & Trench + Field Stop IGBT3 Power Module CoolMOS Q2, Q4: VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C Application • Solar converter
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APTCV60HM70RT3G
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Abstract: No abstract text available
Text: APTCV60HM45RCT3G Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full bridge + rectifier bridge CoolMOS & Trench + Field Stop IGBT3 Power Module CoolMOS Q2, Q4: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C Application • Solar converter
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APTCV60HM45RCT3G
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Untitled
Abstract: No abstract text available
Text: IGC114T170S8RH IGBT3 Power Chip Features: • 1700V Trench + Field stop technology • low switching losses and saturation losses • soft turn off • positive temperature coefficient • easy paralleling Chip Type IGC114T170S8RH VCE IC 1700V 100A This chip is used for:
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IGC114T170S8RH
L7783N,
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Untitled
Abstract: No abstract text available
Text: APTCV60HM45RCT3G Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full bridge + rectifier bridge CoolMOS & Trench + Field Stop IGBT3 Power Module CoolMOS Q2, Q4: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C Application • Solar converter
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APTCV60HM45RCT3G
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Untitled
Abstract: No abstract text available
Text: SIGC32T120R3E IGBT3 Power Chip Features: • 1200V Trench + Field Stop technology low turn-off losses short tail current positive temperature coefficient easy paralleling This chip is used for: power modules C Applications: drives G
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SIGC32T120R3E
L7641M,
L7641T,
L7641E,
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Untitled
Abstract: No abstract text available
Text: SIGC109T120R3E IGBT3 Power Chip Features: • 1200V Trench & Field Stop technology low turn-off losses short tail current positive temperature coefficient easy paralleling Chip Type SIGC109T120R3E VCE IC 1200V 100A This chip is used for: power modules
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SIGC109T120R3E
L7688M,
L7688T,
L7688E,
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Untitled
Abstract: No abstract text available
Text: SIGC101T170R3E IGBT3 Power Chip Features: • 1700V Trench & Field Stop technology low turn-off losses short tail current positive temperature coefficient easy paralleling This chip is used for: power modules C Applications: drives
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SIGC101T170R3E
L7777M,
L7777T,
L7777E,
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Untitled
Abstract: No abstract text available
Text: SIGC41T120R3E IGBT3 Power Chip FEATURES: • 600V Trench & Field Stop technology low turn-off losses short tail current positive temperature coefficient easy paralleling Chip Type SIGC41T120R3E VCE 1200V IC 35A This chip is used for: power module
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SIGC41T120R3E
L7651M,
L7651T,
L7651E,
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IKW40N60H3
Abstract: IKW40N60 L7448
Text: IGC19T60Q High Speed IGBT3 Chip Features: • 600V Trench & Field Stop technology high speed switching series third generation low VCE sat low EMI low turn-off losses positive temperature coefficient qualified according to JEDEC for target
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IGC19T60Q
L7448C,
IKW40N60H3
IKW40N60
L7448
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