circuit diagram of moving LED message display
Abstract: MVL-663UOLK-S
Text: ELLIPSE 4.7 X 5.7 High Performance AllnGaP LED Lamps MVL-663UOLK-S Description Package Dimensions The MVL-663UOLK-S , utilizes the latest absorbing Unit: mm ( inches ) φ4.70 (.191) substrate Aluminum Indium Gallium Phosphide 4.7 (.191) (AllnGaP) LED technology. This LED material
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MVL-663UOLK-S
circuit diagram of moving LED message display
MVL-663UOLK-S
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MVL-663TUYLK-S
Abstract: No abstract text available
Text: ELLIPSE 4.7 X 5.7 High Performance AllnGaP LED Lamps Description MVL-663TUYLK-S Package Dimensions The MVL-663TUYLK-S, utilizes the latest transparent Unit: mm ( inches ) φ4.70 (.191) substrate Aluminum Indium Gallium Phosphide 4.7 (.191) (AllnGaP) LED technology. This LED material
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MVL-663TUYLK-S
MVL-663TUYLK-S,
00MIN.
54TYP.
MVL-663TUYLK-S
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circuit diagram of moving LED message display
Abstract: MVL-663TUOLK-S
Text: ELLIPSE 4.7 X 5.7 High Performance AllnGaP LED Lamps MVL-663TUOLK-S Description Package Dimensions The MVL-663TUOLK-S , utilizes the latest transparent Unit: mm ( inches ) φ4.70 (.191) substrate Aluminum Indium Gallium Phosphide (AllnGaP) LED technology. This LED material
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MVL-663TUOLK-S
circuit diagram of moving LED message display
MVL-663TUOLK-S
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MVL-663UYLK-S
Abstract: No abstract text available
Text: ELLIPSE 4.7 X 5.7 High Performance AllnGaP LED Lamps MVL-663UYLK-S Description Package Dimensions Unit: mm ( inches ) φ4.70 (.191) The MVL-663UYLK-S, utilizes the latest absorbing 4.7 (.191) substrate Aluminum Indium Gallium Phosphide (AllnGaP) LED technology. This LED material
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MVL-663UYLK-S
MVL-663UYLK-S,
00MIN.
54TYP.
MVL-663UYLK-S
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Untitled
Abstract: No abstract text available
Text: InGaAs area image sensor G11097-0606S Image sensor with 64 x 64 pixels developed for two-dimensional infrared imaging The G11097-0606S has a hybrid structure consisting of a CMOS readout circuit ROIC: readout integrated circuit and backilluminated InGaAs photodiodes. Each pixel is made up of an InGaAs photodiode and a ROIC electrically connected by an
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G11097-0606S
G11097-0606S
KMIR1016E03
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G11097-0606S
Abstract: package TO8-16
Text: InGaAs area image sensor G11097-0606S Image sensor with 64 x 64 pixels developed for two-dimensional infrared imaging The G11097-0606S has a hybrid structure consisting of a CMOS readout circuit ROIC: readout integrated circuit and backilluminated InGaAs photodiodes. Each pixel is made up of an InGaAs photodiode and a ROIC electrically connected by an
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G11097-0606S
G11097-0606S
KMIR1016E03
package TO8-16
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Untitled
Abstract: No abstract text available
Text: InGaAs area image sensor G12460-0606S Image sensor with 64 x 64 pixels developed for two-dimensional infrared imaging The G12460-0606S has a hybrid structure consisting of a CMOS readout circuit ROIC: readout integrated circuit and backilluminated InGaAs photodiodes. Each pixel is made up of an InGaAs photodiode and a ROIC electrically connected by an
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G12460-0606S
G12460-0606S
KMIR1023E01
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Untitled
Abstract: No abstract text available
Text: InGaAs area image sensor G11097-0606S Image sensor with 64 x 64 pixels developed for two-dimensional infrared imaging The G11097-0606S has a hybrid structure consisting of a CMOS readout circuit ROIC: readout integrated circuit and backilluminated InGaAs photodiodes. Each pixel is made up of an InGaAs photodiode and a ROIC electrically connected by an
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G11097-0606S
G11097-0606S
KMIR1016E04
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ECG009
Abstract: C100 MCH185A560JK E4432B 60-000346-000B SS 1091
Text: PRELIMINARY DATA SHEET ECG009 BROADBAND HIGH OIP3 AMPLIFIER DC - 2500 MHz Features Applications DC to 2500 MHz 41 dBm Typical OIP3 at 1900 MHz Highly Reliable InGaP HBT 19.0 dB Typical Gain at 900 MHz 24.0 dBm Typical P1dB at 1900 MHz 24.0 dBm Typical P1dB at 2170 MHz
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ECG009
900MHz
OT-89
ECG009
OT-89
AP-000192-000
AP-000194-000
AP-000487-000
AP-000515-000
C100
MCH185A560JK
E4432B
60-000346-000B
SS 1091
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9-GHz
Abstract: TOP MARKING C1 ROHM C100 ECG009 JESD22-A113-B MCH185A560JK marking c7 sot-89 JESD22-A108-A ROHM SOT89 MARKING resistor de 27k ohm
Text: PRODUCTION DATA SHEET ECG009 BROADBAND HIGH OIP3 AMPLIFIER DC - 2500 MHz Features Applications DC to 2500 MHz 41 dBm Typical OIP3 at 1900 MHz Highly Reliable InGaP HBT 19.0 dB Typical Gain at 900 MHz 24.0 dBm Typical P1dB at 1900 MHz 24.0 dBm Typical P1dB at 2170 MHz
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ECG009
900MHz
OT-89
ECG009
OT-89
AP-000192-000
AP-000194-000
AP-000487-000
AP-000515-000
AP-000516-000
9-GHz
TOP MARKING C1 ROHM
C100
JESD22-A113-B
MCH185A560JK
marking c7 sot-89
JESD22-A108-A
ROHM SOT89 MARKING
resistor de 27k ohm
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ROHM SOT89 MARKING
Abstract: ECG009B-1000 ECG009 311 SOT89
Text: PRODUCTION DATA SHEET ECG009 BROADBAND HIGH OIP3 AMPLIFIER DC - 2500 MHz Features Applications DC to 2500 MHz 41 dBm Typical OIP3 at 1900 MHz Highly Reliable InGaP HBT 19.0 dB Typical Gain at 900 MHz 24.0 dBm Typical P1dB at 1900 MHz 24.0 dBm Typical P1dB at 2170 MHz
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ECG009
900MHz
OT-89
ECG009
OT-89
AP-000192-000
AP-000194-000
AP-000487-000
AP-000515-000
ROHM SOT89 MARKING
ECG009B-1000
311 SOT89
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M68EZ328ADS
Abstract: heart beat monitor pc lcd interface microtek service manual 68EZ328 application for lcyp 68EC000 MAX1249 MAX723 MC68681 MC68EZ328
Text: Motorola, Inc. M68EZ328ADS Application Development System User’s Manual Revision 1.0 Nov 14, 1997 Motorola reserves the right to make changes without further notice to any product herein to improve reliability, function, or design. Motorola does not assume any liability arising out of the application or
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M68EZ328ADS
M68EZ328ADS
heart beat monitor pc lcd interface
microtek service manual
68EZ328
application for lcyp
68EC000
MAX1249
MAX723
MC68681
MC68EZ328
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deuterium lamp l2524-01
Abstract: deuterium lamp circuit
Text: Xenon lamp, Xenon flash lamp, Mercury-Xenon lamp, Deuterium lamp and Hollow cathode lamp Long Life High Stability L I G H T S O U R C E CONTENTS Selection guide by applications Product introduction by application . 3 Light measurement technology is utilized in many
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SE-164
TLSZ0001E01
deuterium lamp l2524-01
deuterium lamp circuit
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C1383 NPN transistor collector base and emitter
Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,
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10-foot
C1383 NPN transistor collector base and emitter
NPN transistor c1383
C1383 transistor
C1383 NPN transistor
Light-Dependent Resistor specification
c1983 transistor
pin configuration of C1383 transistor
LHI968
lhi878
c1383
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STM8T143
Abstract: ufdfpn8 footprint ufdfpn8 pcb footprint STM8T142 MARKING 54 dongle bluetooth stm8t st an2869 91/157/AET
Text: STM8T143 Single-channel capacitive sensor for touch and proximity detection Features • Touch and short range proximity detection ■ Internal sampling capacitor ■ On-chip integrated voltage regulator ■ Automatic electrode tuning AET ■ Electrode parasitic capacitance compensation
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STM8T143
STM8T143
ufdfpn8 footprint
ufdfpn8 pcb footprint
STM8T142
MARKING 54
dongle bluetooth
stm8t
st an2869
91/157/AET
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ufdfpn8 footprint
Abstract: ufdfpn8 pcb footprint ufdfpn8 thermal resistance marking XN 8pin STM8T143 dongle bluetooth STM8T143AM62T 91/157/AET
Text: STM8T143 Single-channel capacitive sensor for touch and proximity detection Datasheet −production data Features • Touch and short range proximity detection ■ Internal sampling capacitor ■ On-chip integrated voltage regulator ■ Automatic electrode tuning AET
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STM8T143
STM8T143
ufdfpn8 footprint
ufdfpn8 pcb footprint
ufdfpn8 thermal resistance
marking XN 8pin
dongle bluetooth
STM8T143AM62T
91/157/AET
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91/157/AET
Abstract: ufdfpn8 footprint
Text: STM8T143 Single-channel capacitive sensor for touch and proximity detection Datasheet −production data Features • Touch and short range proximity detection ■ Internal sampling capacitor ■ On-chip integrated voltage regulator ■ Automatic electrode tuning AET
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ufdfpn8 footprint
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atmel 524 8 pin
Abstract: QTAN00
Text: Atmel AT42QT1060 Six-channel QTouch Touch Sensor IC DATASHEET Features Configurations: Can be configured as a combination of keys and input/output lines Number of QTouch® Keys: Two to six Number of I/O Lines: Seven, configurable for input or output, with PWM control for LED driving
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AT42QT1060
atmel 524 8 pin
QTAN00
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91/157/AET
Abstract: No abstract text available
Text: STM8T143 Single-channel capacitive sensor for touch and proximity detection Datasheet - production data • Ear-head detection for MP3/walkman ear buds and Bluetooth headsets • On/off touch sensing button such as GPS system home button • User hands detection for mouse/keyboards
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DocID18315
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ufdfpn8 footprint
Abstract: dfn8 tray ufdfpn8 ufdfpn8 thermal resistance 91/157/AET
Text: STM8T143 Single-channel capacitive sensor for touch and proximity detection Datasheet - production data Applications • Ear-face proximity detection for smart phone devices SO8 narrow • Companion device for navigation joystick/optical track pad UFDFPN8
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DocID18315
ufdfpn8 footprint
dfn8 tray
ufdfpn8
ufdfpn8 thermal resistance
91/157/AET
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91/157/AET
Abstract: No abstract text available
Text: STM8T143 Single-channel capacitive sensor for touch and proximity detection Datasheet - production data Applications • Ear-face proximity detection for smart phone devices SO8 narrow • Companion device for navigation joystick/optical track pad UFDFPN8
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Untitled
Abstract: No abstract text available
Text: AN11267 EMC and system level ESD design guidelines for LCD drivers Rev. 1 — 11 February 2013 Application note Document information Info Content Keywords LCD, LCD driver, COG, Chip-On-Glass, EMC, EMI, ESD, Electro Magnetic Compatibility, Electro Magnetic Interference, Electrostatic
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AN11267
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Untitled
Abstract: No abstract text available
Text: Y3K SUNLIGHT VISIBLE YELLOW LEDs USD' LEDTRONICS PART NO. 4 C H IP THRU 18 C H IP M U LTIC H IP LEDS LED COLOR 1 S T o p r/ I Tstg 1 , 1 / see \ 1 ^ notes f ABSOLUTE MAX. RATINGS Ta=25’ C Pd mW Ifp mA If mA F ELECTRO-OPTICAL CHARACTERISTICS Ta=25*C Vr V
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L264CWY3K
SH2370S
INDGAL02
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IAO5 Sharp
Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
Text: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The
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Q60103-
thS10
to3530
to4600
to4600
IAO5 Sharp
free transistor equivalent book 2sc
siemens transistor asy 27
Diode BAY 61
TRANSISTOR BJ 131-6
tesla typ 202 thyristor
Tesla
z1072
HALL EFFECT 21E
z1071
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