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    IN64 Price and Stock

    Transforming Technologies DK-IN6430

    IONIZER AIR GUN WALL 100-240VAC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DK-IN6430 Bag 10 1
    • 1 $955.32
    • 10 $955.32
    • 100 $955.32
    • 1000 $955.32
    • 10000 $955.32
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    Transforming Technologies IN6430FL

    IONIZER AIR GUN WALL 100-240VAC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IN6430FL Box 5 1
    • 1 $1255.8
    • 10 $1193.01
    • 100 $1155.336
    • 1000 $1155.336
    • 10000 $1155.336
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    Schneider Electric NSYPIN64

    CRN INNER DOOR 600X400
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NSYPIN64 Box 1
    • 1 $135.54
    • 10 $135.54
    • 100 $135.54
    • 1000 $135.54
    • 10000 $135.54
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    Adam Technologies Inc DIN-64MR-L32-A1C3

    DIN 41612 Connectors CONNECTOR, DIN 41612 CONNECTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics DIN-64MR-L32-A1C3
    • 1 -
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    • 10000 $1.33
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    Adam Technologies Inc DIN-64FS-L32-A1C3

    DIN 41612 Connectors CONNECTOR, DIN 41612 CONNECTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics DIN-64FS-L32-A1C3
    • 1 -
    • 10 -
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    • 1000 $1.67
    • 10000 $1.63
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    Find more IN64 price and stock on Findchips.com

    IN64 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IN6461 Microsemi HIGH SUGRE CAPACITY PROVIDES TRANSIENT PROTECTION FOR MOST CRITICAL CIRCUITS. Scan PDF

    IN64 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    microDIMM 214

    Abstract: 240 pin DIMM DDR2 connector JEDEC HYS64T64020EM
    Text: March 2008 HYS64T64020EM–2.5–B2 HYS64T64020EM–[3/3S]–B2 HYS64T64020EM–3.7–B2 HYB64T64020EM–5–B2 214-Pin Unbuffered DDR2 SDRAM MicroDIMM Modules MDIMM SDRAM RoHS Compliant Internet Data Sheet Rev. 1.10 Internet Data Sheet HYS64T64020EM–[2.5/3/3S/3.7/5]–B2


    Original     		PDF HYS64T64020EM HYS64T64020EM­ HYB64T64020EM 214-Pin microDIMM 214 240 pin DIMM DDR2 connector JEDEC

    OCX1601

    Abstract: in107 OCX160 OCX256 IN118 rca 645 iN92 tms 1601
    Text: OCX Register Programming Manual Revision 2.1 February 2003 Revision History Revision 1.0, March 2001—Preliminary Release. Revision 2.0, May 2002—Fairchild Semiconductor Preliminary Release. Revision 2.1, February 2003—Corrected references to OCX160.


    Original     		PDF 2001--Preliminary 2002--Fairchild 2003--Corrected OCX160. OCX1601 in107 OCX160 OCX256 IN118 rca 645 iN92 tms 1601

    diode in58

    Abstract: OMRON POWER RELAY MP2 DMT 98 ATEX G 001 honeywell dcs manual Yokogawa Transducer ABB inverter motor fault code pdt 908
    Text: Interface Technology and Switching Devices 2013 / 2014 7 PCB connection technology and electronics housing • PCB terminal blocks and plug-in connectors • Electronics housing Connection technology for field devices • Plug-in connectors • Cables and connectors


    Original     		PDF unitB-FLK50/0 VIP-CAB-FLK50/0 VIP-CAB-FLK50/FR/OE/0 diode in58 OMRON POWER RELAY MP2 DMT 98 ATEX G 001 honeywell dcs manual Yokogawa Transducer ABB inverter motor fault code pdt 908

    39T0167

    Abstract: U-558 Socket AM2 ADP3205 rome 455D NO10V 1D93 ibm rome BI 335A
    Text: A B C D E F G H J K L M N DATE REL 9 EC NO. 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. 20. 21. 22. 23. 24. 25. 26. 27. 28. 29. 30. 31. 32. 33. 34. 35. 36. 37. 38. 39. 40. 41. 42. 43. 44. 7 6 5 4 3 2 1 TITLE PAGE EC HISTORY CPU 1/3


    Original     		PDF DEC/07/04 J79495 39T0167 1/16W R1003 R1002 LMV431 R1004 39T0167 U-558 Socket AM2 ADP3205 rome 455D NO10V 1D93 ibm rome BI 335A

    IN64

    Abstract: IN1-IN64 switched integrator
    Text: 0431-S0264-00 1/23 TI Internal Data—Signed NDA Required for Distribution - Draft Cycle 7 - 5/13/09 DDC264 DD C2 64 www.ti.com. SBAS368A – MAY 2006 – REVISED MAY 2009


    Original     		PDF 0431-S0264-00 DDC264 SBAS368A 64-Channel, DDC264 20-bit, IN64 IN1-IN64 switched integrator

    cctv dvr circuit diagram

    Abstract: AD8112 AD8113 CCTV DISTRIBUTION NETWORK diagram Audio Power Amplifier 4 chanel cctv dvr circuit board diagram cctv dvr schematic CCTV 4 channel DVR circuit diagram
    Text: Audio/Video, 60 MHz, 16 x 8, Gain of +2 Crosspoint Switch AD8112 FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM SER/PAR D0 D1 D2 D3 D4 A0 A1 A2 CLK 80-BIT SHIFT REGISTER WITH 5-BIT PARALLEL LOADING 40 RESET 40 NO CONNECT DECODE 8 × 5:16 DECODERS AD8112 128


    Original     		PDF AD8112 80-BIT AD8113) MS-026-BED 51706-A 100-Lead ST-100) AD8112JSTZ AD8112-EVALZ1 cctv dvr circuit diagram AD8112 AD8113 CCTV DISTRIBUTION NETWORK diagram Audio Power Amplifier 4 chanel cctv dvr circuit board diagram cctv dvr schematic CCTV 4 channel DVR circuit diagram

    dad2000

    Abstract: dlp dad2000 DRV777 block diagram of mri scanner block diagram of ultrasound scanner dmd 0.95 1080p doppler radar circuit for speed sensing wifi ecg machine ecg semiconductors replacement guide DDC4100
    Text: imaging TI HealthTech Engineering components for life. 2013 www.ti.com/healthtech TI HealthTech ➔ Table of Contents Disclaimer TI products are not authorized for use in safety-critical applications such as life support where a failure of the TI product would reasonably be expected


    Original     		PDF

    N38 transistor

    Abstract: w38 transistor AR33 crosspoint 256 x 256 ocx 256 E23 transistor AB-39
    Text: OCX256 Crosspoint Switch Advanced Data Sheet Features • • • • 667 Mb/s port data bandwidth, >85Gb/s aggregate bandwidth Low power CMOS, 2.5V and 3.3V power supply SRAM-based, in-system programmable 256 configurable I/O ports – 128 dedicated differential input ports


    Original     		PDF OCX256 85Gb/s all2593, MKT-OCX256-DS N38 transistor w38 transistor AR33 crosspoint 256 x 256 ocx 256 E23 transistor AB-39

    Untitled

    Abstract: No abstract text available
    Text: OCX256 Crosspoint Switch Advanced Data Sheet Features • • • • 667 Mb/s port data bandwidth, >85Gb/s aggregate bandwidth Low power CMOS, 2.5V and 3.3V power supply SRAM-based, in-system programmable LVDS I/O OCX256L and LVPECL I/O (OCX256P) versions


    Original     		PDF OCX256 85Gb/s OCX256L) OCX256P)

    Scan AV6

    Abstract: No abstract text available
    Text: OCX256 Crosspoint Switch Advanced Data Sheet Features • • • • 667 Mb/s port data bandwidth, >85Gb/s aggregate bandwidth Low power CMOS, 2.5V and 3.3V power supply SRAM-based, in-system programmable LVDS I/O OCX256L and LVPECL I/O (OCX256P) versions


    Original     		PDF OCX256 85Gb/s OCX256L) OCX256P) Scan AV6

    IN50P

    Abstract: in60p
    Text: OCX1601 Crosspoint Switch Advanced Data Sheet Features • • • • 1.6 Gb/s port data bandwidth, >128Gb/s aggregate bandwidth Low power CMOS, 2.5V and 3.3V power supply SRAM-based, in-system programmable 160 configurable I/O ports – 80 dedicated differential input ports


    Original     		PDF OCX1601 128Gb/s routes93, IN50P in60p

    IN126P

    Abstract: AA-38 AH36 AR24
    Text: OCX256 Crosspoint Switch Advanced Data Sheet Features • • • • 667 Mb/s port data bandwidth, >85Gb/s aggregate bandwidth Low power CMOS, 2.5V and 3.3V power supply SRAM-based, in-system programmable LVDS I/O OCX256L and LVPECL I/O (OCX256P) versions


    Original     		PDF OCX256 85Gb/s OCX256L) OCX256P) IN126P AA-38 AH36 AR24

    Untitled

    Abstract: No abstract text available
    Text: 1N645UR-1 CDLL645 • AVAILABLE INJAN, JANTX AND JANTXV PER MIL-PRF-19500/240 • SILICON RECTIFIER • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 400 mA @ 25ºC


    Original     		PDF 1N645UR-1 CDLL645 MIL-PRF-19500/240 IN645UR-1

    diode in48

    Abstract: IN58 diode SN105125
    Text: User's Guide SBAU186 – March 2011 DDC264EVM User's Guide DDC264EVM This user's guide describes the characteristics, operation, and use of the DDC264EVM. This evaluation module EVM is an evaluation kit for evaluating the DDC264, a 64-channel, current input, 20-bit


    Original     		PDF SBAU186 DDC264EVM DDC264EVM DDC264EVM. DDC264, 64-channel, 20-bit DDC264 DDC264EVMm diode in48 IN58 diode SN105125

    IN6284

    Abstract: IN6282 IN647 2190 ctv IN6286A
    Text: SENSITRON SEMICONDUCTOR 2000 CATALOG TVS 1500 Watt Transient Voltage Suppressor Uni-Directional Diodes 5.6 to 54.0Volts SERIES TYPE BREAKDOWN VOLTAGE V(BR)1 AT I(BR) TEST CURRENT I(BR) WORKING PEAK REVERSE VOLTAGE V 1500W 1N6469 1N6470 IN6471 1N6472 1N6473


    OCR Scan     		PDF 1N6469 1N6470 IN6471 1N6472 1N6473 1N6474 1N6475 1N6476 IN6284 IN6282 IN647 2190 ctv IN6286A

    diode oa202

    Abstract: IN647 OA200 diode TID125 CA500 1S121 1S131 TID140N BY401 IN645
    Text: Diodes and Arrays Hi Device Case Type Outline 1S111 1S113 1S120 1S121 1S130 1S131 1S132 1S134 1S920 1S921 1S922 1S923 1 S924 O A200 O A202 IN645 IN 646 IN647 BY401 BY402 BY403 BY404 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 D O-7 DO-7 DO-35 DO-35 DO-35 DO-35 D O-35 DO-7


    OCR Scan     		PDF 1S111 1S113 1S120 1S121 1S130 1S131 1S132 1S134 1S920 DO-35 diode oa202 IN647 OA200 diode TID125 CA500 TID140N BY401 IN645

    MIH SERIES

    Abstract: IN6476
    Text: IN6461 thr IN 6468and IN6469 thru IN6476 Mierosemi Corp. SANTA A N A. CA h o i mort- in In r m i ? id y " Q - s 2 : o at ton call: TRANSIENT SUPPRESSORS FEATURES - HIGH SURGE CAPACITY PROVIDES TRANSIENT PROTECTION FOR M OST CRITICAL CIRCUITS. • TRIPLE LAYER PASSIVATION.


    OCR Scan     		PDF IN6461 6468and IN6469 IN6476 MIL-S-19500/551. 150DW 1N6461 1N6468 1N6469 1N6476 MIH SERIES IN6476

    Untitled

    Abstract: No abstract text available
    Text: IN6461 thr IN6468 and IN6469 thru IN6476 Microsemi Corp. ? Thp diode experts i SANTA A N A , CA F o r m o r e i n f o r m a t i o n call: 714 9 7 9 -8 2 2 0 TRANSIENT SUPPRESSORS FEATURES • HIGH SURGE CAPACITY PROVIDES TRANSIENT PROTECTION FOR M O ST CRITICAL CIRCUITS.


    OCR Scan     		PDF IN6461 IN6468 IN6469 IN6476 MIL-S-19500/551, 1N6461 1N6468 1N6469 1N6476 1000ilsec

    Untitled

    Abstract: No abstract text available
    Text: IN6461 thri IN6468 and IN6469 thru IN6476 SA.\ IA I V I . C l For more inforni 714 979-8220 I P i l l i FEATURES TRANSIENT SUPPRESSORS • HIGH S U R G E CAP AC ITY PR OV IDES T R A N S IE N T P R O T EC TIO N FOR M O ST C R ITIC A L CIR C U ITS . • T R IP LE LA YER PASSIVATION.


    OCR Scan     		PDF IN6461 IN6468 IN6469 IN6476 MIL-S-19500/551, 00G3711 1N6461 1N6468 1N6469 1N6476

    IN6463

    Abstract: IN6475 IN6464 IN6476 IN6466
    Text: IN6461 thru IN6468 and IN6469 thru IN6476 Microsemi Corp. Y The dio d e experts SANTA ANA, CA SCOTTSDALE, AZ F o r m o re in fo rm a tio n call: 714 979-8220 TRANSIENT SUPPRESSORS FEATURES • HIGH SURGE CAPACITY PROVIDES TRANSIENT PROTECTION FOR M O ST CRITICAL CIRCUITS.


    OCR Scan     		PDF IN6461 IN6468 IN6469 IN6476 MIL-S-I9500/551. 1N6461 1N6468 1N6469 1N6476 IN6463 IN6475 IN6464 IN6476 IN6466

    CV7040

    Abstract: cv8790 OA202 equivalent BY 225 diode IS920 DO-35 silicon Rectifier diodes CV8617 CV7875 CV7332 10 35 DIODE
    Text: Diodes and Arrays Hi Device Case Type Outline 1S111 1S113 1S120 1S121 1S130 1S131 1S132 1S134 1S920 1S921 1S922 1S923 1 S924 O A200 O A202 IN645 IN 646 IN647 BY401 BY402 BY403 BY404 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 D O-7 DO-7 DO-35 DO-35 DO-35 DO-35 D O-35 DO-7


    OCR Scan     		PDF 1S111 1S113 1S120 1S121 1S130 1S131 1S132 1S134 1S920 DO-35 CV7040 cv8790 OA202 equivalent BY 225 diode IS920 DO-35 silicon Rectifier diodes CV8617 CV7875 CV7332 10 35 DIODE

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    M63001FP

    Abstract: No abstract text available
    Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    OCR Scan     		PDF REV9806027 m63001fp \300mA V300mA REV9806027 M63001FP

    IN6478-IN6484

    Abstract: No abstract text available
    Text: COMPLETELY ENCAPSULATED BRAZED CONSTRUCTION CAVITY-FREE OPAQUE GLASSPASSIVATED JUNCTION SOLID BRAZING. LOW RESISTANCE EXCELLENT SURGE CAPABILITIES BRAZED-TEMP > 600°C 'G lass-plastic encapsulation technique is covered by PatentNo. 3,996,602 of 1976; brazed -lead assembly b Patent No. 3,930,306 ol 1976 and glass


    OCR Scan     		PDF IN6478-IN6484 GL41A-GL41M)