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    IN1206A

    Abstract: No abstract text available
    Text: 1N1199A R THRU 1N3673A(R) DACO SEMICONDUCTOR CO., LTD. STANDARD RECOVERY DIODES STUD TYPE 12A Features 12Amp Rectifier 50-1000 Volts High Surge Capability Types up to 1000V V RRM DO-4 B Maximum Ratings N Operating Temperature: -65 C to +200 Storage Temperature: -65 C to +200


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    PDF 1N1199A 1N3673A 12Amp IN1199A IN1200A IN1202A IN1204A IN1206A IN3671A IN3673A

    TIC2260

    Abstract: C10601 SC141D IN5829 IN3492 in540i IN1190 IN3493 IN1183A IN1184
    Text: G EN ERA L PURPOSE R ECTIFO SS 0 2 5 8 3 5 4 ADVANCED SEMICONDUCTOR 82 ÍE1 02553511 n""""35 11 I 820 00035 o r~ Of-o / lo AVERAGE RECTIFIED FORWARD CURRENT AMPERES VRRM 50 100 150 200 300 400 500 600 700 800 900 1000 1200 IFSM VFM Ca s é 3 3 5 6 MR500


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    PDF DDQD035 MR500 IN5400 IN1612 IN1341A MR750 IN1199A IN3208 IN248B IN1191A TIC2260 C10601 SC141D IN5829 IN3492 in540i IN1190 IN3493 IN1183A IN1184

    in1200A

    Abstract: IN4506 IN1206A IN1204A IN3671A IN3909 IN4507 IN1202 in1198a IN1202A
    Text: RICHARDSON/ SILICON DIODES N A T I O N A L EL LZE D • 773^17 0 0 D D 7Q 7 3m ■ NAT sir JE D E C TY P E IN1200A-1206A IN3670A-73A IN5331 IN3890-93 IN4510-11 IN3899 IN3903 N A T IO N A L T Y P E NO. IN1192A-98A IN3909-13 A25 I f m AV Max. average forward


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    PDF IN1200A-1206A IN3670A-73A IN5331 IN3890-93 IN4510-11 IN3899 IN3903 IN1192A-98A IN3909-13 IN3910 in1200A IN4506 IN1206A IN1204A IN3671A IN3909 IN4507 IN1202 in1198a IN1202A

    TIC2260

    Abstract: t25000 IN1190 IN5829 IN3492 IN1184A sc1430 jb33 IN2158 in5834
    Text: G E K E R A LP U R P O S E R EC TïFISR S 0258354 A D VA N CED S E M IC O N D U C T O R 82 tEl Q25a3Sl<0000035 ° I 82D 00035 o r - o / - o f lo AV ER A G E R ECTIFIED FORW ARD C U R R EN T AM PERES VRRM 50 100 150 200 300 400 500 600 700 800 900 1000 1200


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    PDF MR500 IN5400 IN1612 IN1341A MR750 IN1199A IN3208 IN248B IN1191A IN2154 TIC2260 t25000 IN1190 IN5829 IN3492 IN1184A sc1430 jb33 IN2158 in5834

    SD5115

    Abstract: IN3492 in1615 IN1202A IN5829 IN3495 IN3491 in3493 IN3880 2N15
    Text: GENERAL PURPOSE RECTIFOSS 0 2 5 8 3 5 4 ADVANCED SEMICONDUCTOR 82 ÍE102553511 n""""35 11I 820 00035 o r ~ O f - o / lo A V ER A G E REC TIFIED FORW ARD C U R R EN T AM PERES VRRM 50 100 150 200 300 400 500 600 700 800 900 1000 1200 IFSM V FM Ca s é 3 3


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    PDF MR500 MR501 MR502 MR504 MR506 MR508 MR510 IN3491 IN3492 IN3493 SD5115 in1615 IN1202A IN5829 IN3495 IN3880 2N15

    T35W

    Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
    Text: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,


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    PDF 10DB2P 10DB4P 10DB6P 180B6A T35W transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d

    TIC2260

    Abstract: IN3491 IN1202 IN3492 IN5829 IN1204 IN1190 IN1184 SC141D IN3495
    Text: r lo AVERAGE RECTIFIED FORWARD CURRENT AMPERES VRRM 50 100 150 200 300 400 500 600 700 800 900 1000 1200 IFSM VFM Ca s é 3 3 5 6 MR500 MR501 IN5400 IN5401 ÍN1612 IN1613 MR502 IN5402 IN1614 IN1341A IN1342A IN1343A IN1344A MR504 IN5404 ¡N1615 MR506 IN5406


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    PDF MR500 IN5400 IN1612 IN1341A MR750 IN1199A IN3208 IN248B IN1191A N2154 TIC2260 IN3491 IN1202 IN3492 IN5829 IN1204 IN1190 IN1184 SC141D IN3495