IMI6000
Abstract: IMI6080 IMI6140 IMI6170 IMI6270 IMI6330 IMI6430 IMI6620 IM16140
Text: • ■ ■ ■ ■ PRODUCT FEATURES P R O D U C T D E S C R IP T IO N 2.0 micron CMOS Oxide-Isolated silicon-gate process Dual level metalization Fully autoroutable 820 to 6200 2-input NAND equivalents The IMI6000 family of gate arrays from International
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IMI6000
IMI6080
IMI6140
IMI6170
IMI6270
IMI6330
IMI6430
IMI6620
IM16140
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Untitled
Abstract: No abstract text available
Text: PRO DUCT DESCRIPTIO N PRO DUCT FEATURES 2.0 micron CMOS The IMI6000 family of gate arrays from International M icrocircuits is fabricated from an advanced 2.0 micron double metal oxide-isolated CMOS process. This process is unmatched for speed and density
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IMI6000
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Pioneer SSA 40
Abstract: G4060 LT 6732 IMI6140 G4420
Text: /y INTERNATIONAL MICROCIRCUITS INCORPORATED ^ G io v o o /i/û o o f / V ^ u y I r ’; ~ j> LTj _ < ¿6 ' >L ^ '- i-G -p - PRODUCT FEATURES IM I DESIGN CYCLE FLOWCHART 2.0 and 3.5 Micron CMOS Single and Dual Level Metal cr~ Up to 6200 2-input NAND equivalents ^
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885-10K
Pioneer SSA 40
G4060
LT 6732
IMI6140
G4420
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Untitled
Abstract: No abstract text available
Text: INTL. MICROCIRCUITS INC 73 Î Ë J 4 0 5 0 4 1 6 0 0 0 0 2 5 5 PR O D U C T D E S C R IP TIO N PR O D U C T FEATURES 2.0 micron CMOS Oxide-Isolated silicon-gate process Dual level metal ization Fully autoroutable 820 to 6200 2-input NAND equivalents Up to 158 I/O connections
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T-42-ll-09
IMI6000
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