Untitled
Abstract: No abstract text available
Text: IBM0164165B IBM0164165P P re lim in a ry 4M X 16 13/9 E D O DRAM Features • 4 ,194,304 word by 16 bit organization Dual C A S Byte R ead/W rite • Single 3.3 ± 0.3V pow er supply Perform ance: • Extended Data O ut H yper Page Mode • CAS before RAS Refresh
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IBM0164165B
IBM0164165P
104ns
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Untitled
Abstract: No abstract text available
Text: IBM0164405B IBM0164405P Preliminary 16M x 4 13/11 EDO DRAM i¡‘.a b rm ta t ¡n w itm 'H iA K ui » K i u n s M X 'i K a B M n Features • 16,777,216 w ord by 4 bit organization • R ead-M odify-W rite • S ingle 3.3 ± 0.3V pow er supply • Perform ance:
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IBM0164405B
IBM0164405P
104ns
IBM0164405P
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Untitled
Abstract: No abstract text available
Text: IBM0165405B IBM0165405P 16M x 4 12/12 EDO DRAM Features • Read-Modlfy-Write 16,777,216 word by 4 bit organization Performance: • Single 3.3 ± 0.3V power supply • Extended Data Out Hyper Page Mode CAS before RAS Refresh - 4096 cycles/Retention Time
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IBM0165405B
IBM0165405P
104ns
145ma
155ma
135ma
130ma
27H6250
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Untitled
Abstract: No abstract text available
Text: IBM0164400B 16M X 4 DRAM Features • 1 6 ,7 7 7 ,2 1 6 w ord by 4 bit organization • Single 3 .3 ± 0 .3 V pow er supply Low P ow er Dissipation - Active: 3 9 6 m W /3 6 0 m W m ax - S tandby (L V T TL Inputs): 7 .2 m W (m ax) - S tandby (L V C M O S Inputs): 7 2 0 m W (m ax)
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IBM0164400B
110ns
ilx875m
H0000
MMDD44DSU-01
06H0000
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TSOP 54 PIN
Abstract: No abstract text available
Text: IBM0164160B 4M x 16 DRAM A d van ce Features • 4 ,1 9 4 ,3 0 4 word by 16 bit organization • Single 3 .3 ± 0 .3 V pow er supply • Low P ow er Dissipation - Active: 3 9 6 m W /3 6 0 m W /3 2 4 m W m ax - S tandby (L V T TL Inputs): 7 .2 m W (m ax)
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IBM0164160B
cles/128m
ilx875m
110ns
130ns
06H0004
MMDD48DSU-01
TSOP 54 PIN
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