Untitled
Abstract: No abstract text available
Text: Quality Conformance Inspection of Finished Products 4. Q u a lity C o n fo rm a n c e In s p e c tio n o f Finished P ro du cts T he im portance of cre a tin g quality a n d reliability in sem iconductor products d u rin g the design an d m a n u fa c tu rin g p ha se s h a s been described. In order to check for com pliance in th e q u a lity control
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Assurance-16
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MW131
Abstract: 3N243 3N243R 3N244 3N244R 3N245 3N245R
Text: OPTEK TE C HN OL OG Y INC ObE D | bVTâSâD GOODMEh 3 J O p to e le c tro n ic s D iv is io n f# ? fV T R W Electronic Camponents Group fto d u c t Bulletin S23S January 1985 High R eliab ility O p tic a lly Coupled Isolators Types 3N243R, 3N244R, 3N245R r ~ .n iaa.lf i 4 lEADS - G0U1 PU' TED * 0VAR
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3N243R.
3N244R,
3N245R
MIL-S-19500/486
3N243R,
3N245R
MW131
3N243
3N243R
3N244
3N244R
3N245
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JAN2N2222A
Abstract: Q002 complementary npn-pnp 2N2222A 026 2N2907A surface mount Power Transisitor 100V 2A Transistor 2N2222A 2N2222A 2N2907A HCT700
Text: OPTEK Product Bulletin HCT700 May 1993 Surface Mount NPN/PNP Complementary Transistors Type HCT700 Features • C e ra m ic surface mount package • Miniature package to minimize circuit board area • Electrical performance sim ilar to 2 N 2222A and 2N 2 9 0 7 A
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HCT700
HCT700
2N2222A
2N2907A
MIL-S-19500
JANTX2N4854U)
Q00233S
JAN2N2222A
Q002
complementary npn-pnp
2N2222A 026
2N2907A surface mount
Power Transisitor 100V 2A
Transistor 2N2222A
2N2907A
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400v 20 amp mosfet
Abstract: OM9001SS OM9002SS OM9003SS OM9004SS
Text: OM9001SS OM9003SS OM9002SS OM9004SS POWER MOSFET AND HIGH EFFICIENCY RECTIFIER IN A SINGLE HERMETIC ISOLATED SIP PACKAGE 100V Thru 500V, Up To 30 Amp, N-Channel MOSFET With Back To Back Zener Gate Clamp Protection And Uncommitted Ultra-Fast Recovery 35 To 50 nsec Rectifier
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OM9001SS
OM9003SS
OM9002SS
OM9004SS
MIL-S-19500,
150DIA-
400v 20 amp mosfet
OM9004SS
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Untitled
Abstract: No abstract text available
Text: 1N6478 I n t e r n a t io n a l S e m ic o n d u c t o r , I n c . thru 1N6484 SURFACE MOUNT, GLASS PASSIVATED 1.0 Amp SILICON RECTIFIER DIODE FEATURES: Plastic material has Underwriters Laboratory S G1 Flammability Classification 94 V -0 Low Leakage Glass Passivated Junction
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1N6478
1N6484
IL-S-19500
IL-STD-202,
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LB 122 transistor
Abstract: 2N2907A surface mount 2N2907A HCT2907A JAN2N2907A ma131
Text: OPTEK TEC H NO LO GY INC 4flE » • L^SSaO 000145 1 110 ■ Product Bulletin OTK _ £>j OPTEK M a y 1989 Surface Mount PNP General Purpose Transistor Type HCT2907A Features T 2/7 -Q°i Absolute Maximum Ratings TA = 25°C unless otherwise noted) • Surface mountable on ceramic or printed
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HCT2907A
2N2907A
MIL-S-19500
LB 122 transistor
2N2907A surface mount
2N2907A
JAN2N2907A
ma131
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2N7236
Abstract: 2N7236 JANTXV 2N7236 JANTX KIV* diode CCII APPLICATION me 555 IRFM9140 D 1380 Transistor
Text: Data Sheet No. PD-9.495D INTERNATIONAL RECTIFIER | I R | REPETITIVE AVALANCHE RATED AND dv/dt RATED •RFM914Q SN7S36 JAIMSSN7S36 JANTXSN7S36 JAIMTXVSN7S36 TRANSISTOR Il P-CHANNEL [REF: M IL-S-19500/S9B ] -100 Volt, 0.20 Ohm HEXFET Product Summary The HEXFET technology is the key to International
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IRFMS14Q
JANSSN7S36
JANTXSN7S36
JANTXVSN7S36
MIL-S-19500/S9B]
IRFM9140O.
IRFM9140U
O-254
MIL-S-19500
2N7236
2N7236 JANTXV
2N7236 JANTX
KIV* diode
CCII APPLICATION
me 555
IRFM9140
D 1380 Transistor
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1N6392 JANTX
Abstract: 75HQ045 1N6392 JANTX1N6392 1N6392 75HQ045 DO-203AB JAN1N6392 JANTXV1N6392
Text: International HH Rectifier 75S1 JAN1N6392 JANTX1N6392 JANTXV1N6392 [ M IL-S-19500/554] SCHOTTKY RECTIFIER 60 Amp Major Ratings and Characteristics Characteristics 'f a v Rectangular Description/Features 1N6392 Units 60* A 45* V waveform V RWM 'fs m 60Hz
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JAN1N6392
JANTX1N6392
JANTXV1N6392
MIL-S-19500/554]
1N6392
60Apk
TJ-25Â
75HQ045,
1N6392,
1N6392 JANTX
75HQ045 1N6392
75HQ045
DO-203AB
JANTXV1N6392
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2N7224 JANTXV
Abstract: 3000CL 2N7224 IRFM150
Text: Data Sheet No. PD-9.487C INTERNATIONAL RECTIFIER IOR REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM150 SN7SS4 JANTXSN7SS4 JANTXV2N7224 ;n N-CHANNEL [REF: M IL-S-19500/59S] Product Summary 100 Volt, 0.07 Ohm HEXFET The HEXFET® technology is the key to International
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IRFM150
MIL-S-19500/595]
IRFM150D
IRFM150U
O-254
MIL-S-19500
S5M52
2N7224 JANTXV
3000CL
2N7224
IRFM150
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Untitled
Abstract: No abstract text available
Text: MH 66004, 66005 H IG H V O LTA G E O PTO -ISO LA TO R S C - ! O L IF C IR O N IC P R O R O C S DIVISION 40,000 V FEATURES 3LEADS DIA' BLACK DOT 2 • High temperature operation+125°C • Hermetic ceramic packaging • High surge protection / LEADS RED DOT
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Mil-66004
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Untitled
Abstract: No abstract text available
Text: H S I ELECTRONICS INC 3SE D ES 5b5b4bb 0DD03S4 b E3MSI ABRUPT - HYPERABRUPT UHF/VHF TUNING DIODES elG ctron lcs m e The abrupt ZC700 and hyperabrupt ZC800 series tuning diodes together offer a selection of characteristics that could fit many U H F /V H F applications. Where required the higher
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0DD03S4
ZC700
ZC800
IL-S-19500.
ZC700-ZC714,
ZC800-ZC899,
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Untitled
Abstract: No abstract text available
Text: M S I ELECTRONICS INC e le c tro n lc e m e 3SE D SbSbMbb 0000333 3 El MSI T'07-f^ m HYPERABRUPT U H F /V H F TU N IN G DIODES DHA6520. A, B, C, D thru DHA6525, A, B, C, D CATHODE The controlled C -V characteristics of this hyperabrupt tuning diode series
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DHA6520.
DHA6525,
IL-S-19500
DHA6524A
DHA6523A
6522B
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2N1358
Abstract: pnp germanium transistor MIL-S-19500 Germanium Transistor FY 3011
Text: MIL-S-19500/122C >L ojiriUAiiLjL xyoy SUPERSEDING MIL-S-19500/122B 28 Ju ly 1965 M IL IT A R Y S PEC IFIC A T IO N SEM ICONDUCTOR D EV IC E, TRANSISTO R, PN P, GERM ANIUM , HIG H -PO W ER T Y P E 2N1358 This specification is mandatory for use bv a ll Departments
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MIL-S-19500/122C
MIL-S-19500/122B
2N1358
MIL-S-19500/122C
2N1358
pnp germanium transistor
MIL-S-19500
Germanium Transistor
FY 3011
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Untitled
Abstract: No abstract text available
Text: LITEW^I SBL1630PT thru 1660PT SEMICONDUCTORS FEATURES TO-3P • Plastic package has U /L • • Flam m ability Classification 94V-0 Exceeds environmental standards o f M IL-S-19500 • • Metal o f silicon rectifier, m a jo rity carrier conduction Low power loss, high efficiency
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SBL1630PT
1660PT
IL-S-19500
D0201AD
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traveler
Abstract: No abstract text available
Text: FSL110D, FSL110R Semiconductor Data Sheet 3.5A, 100V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs T h e D iscrete Products O pe ra tio n of Harris Sem ico n du cto r has d evelo ped a s e ries of R adiation H a rd e n e d M O S F E T s October 1998
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FSL110D,
FSL110R
1-800-4-HARR
traveler
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Untitled
Abstract: No abstract text available
Text: FSF254D, FSF254R 18A, 250V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs e 1998 Features Description • The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space
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FSF254D,
FSF254R
MIL-S-19500
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diode smd ED 84
Abstract: smd transistor NG
Text: FSYC9260D, FSYC9260R Semiconductor August 1998 Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs File Number 4569 Features • 2 8 A , -200V , rQg ONi = 0.130J2 T h e D iscrete Products O pe ra tio n of Harris Sem ico n du cto r • Total D ose
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FSYC9260D,
FSYC9260R
1-800-4-HARR
diode smd ED 84
smd transistor NG
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A14A
Abstract: A14U A14F A14B A115F A115D A115C GE A14A GER4007 A115B
Text: REC TIFIERS rHE INDUSTRY’S BROADEST LINE OF POWER RECTIFIERS— .250 TO 1500 AMPERES, UP TO 3000 VOLTS • CURRENT/VOLTAGE RATINGS ■ PACKAGING ■ MOUNTING AND COOLING ■ HIGH-SPEED FAST RECOVERY ■ TRANSIENT SELF-PROTECTION ■ GENERAL PURPOSE REC TIFIERS
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1N5059-62
1N4245-49
1N5624-27
DT230
A14A-P
GER4001-7
A114A-M
A15A-N
A115A-M
DT23CF
A14A
A14U
A14F
A14B
A115F
A115D
A115C
GE A14A
GER4007
A115B
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NE510A
Abstract: SE510A differential pair cascode NE510J SE510 SE510J
Text: signotiES DUAL DIFFERENTIAL AMPLIFIER LINEAR INTEGRATED CIRCUITS DESCRIPTION PIN CONFIGURATIONS The 510 is a dual high-frequency differential amplifier with associated constant current sources and biasing elements contained w ithin a silicon m onolithic epitaxial substrate.
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SE510J
SE510A
12ErC
NE510A
differential pair cascode
NE510J
SE510
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Untitled
Abstract: No abstract text available
Text: FSYA150D, FSYA150R S e m iconductor January 1999 Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space
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FSYA150D,
FSYA150R
1-800-4-HARRIS
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smd transistor NG
Abstract: No abstract text available
Text: FSYE13A0D, FSYE13A0R M ay 1999 D ata S h eet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs T h e D iscrete Products O pe ra tio n of Harris Sem ico n du cto r has d evelo ped a s e ries of R adiation H a rd e n e d M O S F E T s specifically d esig n ed for c o m m ercial and m ilitary spa c e
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FSYE13A0D,
FSYE13A0R
1-800-4-HARRIS
smd transistor NG
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Untitled
Abstract: No abstract text available
Text: FSL923A0D, FSL923A0R f f X R R /S Data Sheet 5A, -200V, 0.670 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs June 1999 File Num ber 4359.2 Features • 5A, -200V, rQg ONi = 0.670J2 • Total Dose The Discrete Products Operation of Harris has developed a
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FSL923A0D,
FSL923A0R
-200V,
670J2
1-800-4-HARRIS
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Untitled
Abstract: No abstract text available
Text: RFF70N06 Semiconductor 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET September 1998 Features Description • 25Af, 60V The RFF70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses fea ture sizes approaching those of LSI circuits gives optimum
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RFF70N06
RFF70N06
0-025i2
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
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Untitled
Abstract: No abstract text available
Text: iüWÏÏTMSIM] 500W BI-POLARITY TRANSIENT VOLTAGE SUPPRESSORS January 16, 1998 TEL:805-498-2111 FAX:805-498-3804 W EB:http://www.semtech.com AXIAL LEADED, HERMETICALLY SEALED, 500 WATT TRANSIENT VOLTAGE SUPPRESSORS Q UICK REFERENCE DATA Vbr Low dynamic impedance
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1N6102
1N6137
175mA
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