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    1090mhz signal

    Abstract: ILD1011 ILD1011M400 INTEGRA TECHNOLOGIES ILD1011M400 1030mhz 4620 integra ild1011m 400w class d schematic probe wafer
    Text: Part Number: Integra ILD1011M400 Preliminary TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET − High Power Gain − Superior thermal stability The high power transistor part number ILD1011M400 is designed for Avionics systems operating at 1030-1090 MHz. Operating at 50µs,


    Original     		PDF ILD1011M400 ILD1011M400 ILD1011M400-REV-PR4-DS-REVPR4 1090mhz signal ILD1011 INTEGRA TECHNOLOGIES ILD1011M400 1030mhz 4620 integra ild1011m 400w class d schematic probe wafer

    ILD1011M160HV

    Abstract: No abstract text available
    Text: Part Number: Integra ILD1011M160HV TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability The high power transistor part number ILD1011M160HV is designed for Avionics systems operating at 1030-1090 MHz. Operating at


    Original     		PDF ILD1011M160HV ILD1011M160HV ILD1011M160HV-REV-NC-DS-REV-B

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra ILD1011M30 TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability  Gold Metal The high power transistor part number ILD1011M30 is designed for Avionics systems operating at 1030-1090 MHz. This LDMOS FET device


    Original     		PDF ILD1011M30 ILD1011M30 ILD1011M30-REV-NC-DS-REV-B

    Untitled

    Abstract: No abstract text available
    Text: Part Number: ILD1011M450HV Preliminary Integra TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET − High Power Gain − Superior thermal stability The high power transistor part number ILD1011M450HV is designed for Avionics systems operating at 1030-1090 MHz. Operating at


    Original     		PDF ILD1011M450HV ILD1011M450HV ILD1011M450HV-REV-PR1-DS-REV-A

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra ILD1011M15 TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability  Gold Metal The high power transistor part number ILD1011M15 is designed for Avionics systems operating at 1030-1090 MHz. This LDMOS FET device


    Original     		PDF ILD1011M15 ILD1011M15 ILD1011M15-REV-NC-DS-REV-B

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra ILD1011M400 TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability The high power transistor part number ILD1011M400 is designed for Avionics systems operating at 1030-1090 MHz. Operating at 50µs,


    Original     		PDF ILD1011M400 ILD1011M400 ILD1011M400-REV-NC-DS-REV-I

    ILD1011M250

    Abstract: ild10
    Text: Part Number: Integra ILD1011M250 TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability The high power transistor part number ILD1011M250 is designed for Avionics systems operating at 1030-1090 MHz. Operating at 50µs,


    Original     		PDF ILD1011M250 ILD1011M250 ILD1011M250-REV-NC-DS-REV-A ild10

    Integra Technologies

    Abstract: No abstract text available
    Text: Part Number: Integra ILD1011M15HV TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability The high power transistor part number ILD1011M15HV is designed for Avionics systems operating at 1030-1090 MHz. Operating at 50µs,


    Original     		PDF ILD1011M15HV ILD1011M15HV ILD1011M15HV-REV-NC-DS-REV-E Integra Technologies

    transistor BD 522

    Abstract: J023
    Text: Part Number: Integra ILD1011M550HV TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability The high power transistor part number ILD1011M550HV is designed for Avionics systems operating at 1030-1090 MHz. Operating at


    Original     		PDF ILD1011M550HV ILD1011M550HV ILD1011M550HV-REV-NC-DS-REV-A transistor BD 522 J023

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra ILD1011M280HV Preliminary TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability The high power transistor part number ILD1011M280HV is designed for Avionics systems operating at 1030-1090 MHz. Operating at


    Original     		PDF ILD1011M280HV ILD1011M280HV ILD1011M280HV-REV-PR1-DS-REV-B

    bd 142 transistor

    Abstract: No abstract text available
    Text: Part Number: Integra ILD1011M150 TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability The high power transistor part number ILD1011M150 is designed for Avionics systems operating at 1030-1090 MHz. Operating at 50µs,


    Original     		PDF ILD1011M150 ILD1011M150 ILD1011M150-REV-NC-DS-REV-B bd 142 transistor

    filter for GPS spice

    Abstract: BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode
    Text: RF手册第14版 用于高性能RF产品的应用和设计手册2010年5月 恩智浦半导体RF手册第14版 3 高性能RF适用于最高要求的应用 恩智浦RF手册令设计更简易 恩智浦RF手册–当今RF设计市场上最重要的参考工具之一–展示了我们从小信号到大功率


    Original     		PDF RF20105 67SiGe JESD204A-DACADC JESD204A- AEC100 BFR90 BFQ33 TFF1004HN JESD204A BLF578) filter for GPS spice BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode

    MPF102 spice model

    Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H
    Text: RF Manual 15th edition Application and design manual for High Performance RF products May 2011 High Performance RF for the most demanding applications NXP’s RF Manual makes design work much easier NXP's RF Manual is one of the most important reference tools on the market for


    Original     		PDF te121 MPF102 spice model BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H

    sot-89 BV SMD TRANSISTOR MARKING CODE

    Abstract: bgu7051 MS1051 2SK163 BLF578 fm band BLF278 mosfet HF applications BFU610F TAN250A PTFA 210301E - 30 W 100MHz SMD RF Mixer
    Text: RFマニュアル第14版 RF製品用のアプリケーションお よび設計マニュアル2010年5月 NXPセミコンダクターズRFマニュアル第14版 3 最も要求の高いアプリケーションに向けたハイパフォーマンスRF NXPのRFマニュアルでRF設計がこれ


    Original     		PDF NXPRF14 JESD204A AEC100 RFBFR90 RFBFQ33 TFF1004HN FMF11070HN sot-89 BV SMD TRANSISTOR MARKING CODE bgu7051 MS1051 2SK163 BLF578 fm band BLF278 mosfet HF applications BFU610F TAN250A PTFA 210301E - 30 W 100MHz SMD RF Mixer