k10t60
Abstract: No abstract text available
Text: IKP10N60T p TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C
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IKP10N60T
k10t60
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k10t60
Abstract: Q67040S4681 Q67040S4682 30A20V fast recovery diode 1000v 10A IKP10N60T K10T60 IKB10N60T IKP10N60T SWITCHING DIODE 600V 2A Q67040-S4681
Text: IKP10N60T IKB10N60T TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C
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Original
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IKP10N60T
IKB10N60T
P-TO-220-3-1
O-220AB)
Oct-04
k10t60
Q67040S4681
Q67040S4682
30A20V
fast recovery diode 1000v 10A
IKP10N60T K10T60
IKB10N60T
IKP10N60T
SWITCHING DIODE 600V 2A
Q67040-S4681
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Untitled
Abstract: No abstract text available
Text: IKP10N60T p TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C
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Original
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IKP10N60T
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PDF
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k10t60
Abstract: No abstract text available
Text: IKP10N60T p TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C
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Original
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IKP10N60T
PG-TO-220-3-1
k10t60
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Untitled
Abstract: No abstract text available
Text: TRENCHSTOP Series IKP10N60T p Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features: • Very low VCE sat 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s
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IKP10N60T
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PDF
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Untitled
Abstract: No abstract text available
Text: IKP10N60T p TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C
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Original
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IKP10N60T
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PDF
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IKP10N60T
Abstract: IKP10N60T IGBT k10t60
Text: IKP10N60T p TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C
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Original
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IKP10N60T
PG-TO-220-3-1
O-220AB)
IKP10N60T IGBT
k10t60
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PDF
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K10T60
Abstract: IKP10N60T PG-TO-220-3-1 fast recovery diode 1000v 10A
Text: IKP10N60T p TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C
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Original
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IKP10N60T
K10T60
IKP10N60T
PG-TO-220-3-1
fast recovery diode 1000v 10A
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PDF
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k10t60
Abstract: IKP10N60T PG-TO-220-3-1
Text: IKP10N60T p TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C
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Original
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IKP10N60T
k10t60
IKP10N60T
PG-TO-220-3-1
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