OA 10 diode
Abstract: No abstract text available
Text: SK 75 TAE FIHK FIIKP F+IK TOR UV L F F <O- R WE X$> CYEE CZEE HMUVOLJCZ Characteristics Symbol Conditions SEMITOP 2 Thyristor and Diode separated in the same housing SK 75 TAE Target Data Features # $%&' * +,-./0 # 10, -)2,3 &%40*.0/ # 5,(* *2(0-6,2 (07 .-%8(*.%0
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mikroelektronik Heft 12
Abstract: SY 185 Radio Fernsehen Elektronik 1977 Heft 9 B260D information applikation keramische Werke Hermsdorf mikroelektronik Heft 10 VEB mikroelektronik information applikation mikroelektronik mikroelektronik DDR
Text: li ii iff li i l •> ■! l l ■! *i n lil i KBD Information Applikation ANSTEUER SCHALTKREIS FÜR SCHALTNETZTEILE UND GLEICH SPANNUNGSWANDLER — R«ge verstarkm B 260 Informations- und Applikationshefte „M IK R O E LE K TR O N IK " Bisher erschienen:
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TDA2800
Abstract: information applikation information applikation mikroelektronik mikroelektronik heft Radio Fernsehen Elektronik 1977 Heft 9 "Mikroelektronik" Heft Mikroelektronik Information Applikation mikroelektronik Heft 12 applikation heft mikroelektronik DDR
Text: m o ^ a f^ o lsl-cta n m iil i Information Applikation Q O 0 t r ö n f l k l n it s O l B l C f a P O T lM Information Applikation - Heft 56 IS für Farbfefnseh-\ empfänger v , * Teil 2 v e b H a lb leite rw e rk fr a n k fu r t/ o d e r im v e b k o m b in a t m ik ro e le k tro n ik
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SKKD 80
Abstract: No abstract text available
Text: s e m ik r o n V rsm V rrm Ifhms maximum values for continuous operation 110 A V Ifa v (sin. 180; Tease = 65 °C; 50 Hz) 70 A 1500 SKKD 60 F 15 1600 SKKD 60 F 16 Symbol Conditions SEMIPACK 2 Fast Diode 1*Modules SKKD 60 F Preliminary data SKKD 60 F Units
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RE14
Abstract: No abstract text available
Text: A f ik v m MA4ST520/MA4ST530 Series UHF, VHF Silicon Hyperabrupt Tuning Varactors Features • A SUPERIOR ION IMPLANTATION PROCESS RESULTS IN MORE REPEATABLE C-V CHARACTERISTICS WITHIN SPECIFIED CAPACITANCE
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MA4ST520/MA4ST530
MA4ST520
MA4ST530
MA4ST530
RE14
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0496B
Abstract: No abstract text available
Text: S E M IK R O N V rsm Ifrms m axim um values fo r continuous operation V rrm 110 A Fast Diode1* Modules V I fav (sin. 180; T case = 85 °C; 50 Hz) 58 A 1100 SKKD 75 F 11 1200 SKKD 75 F 12 Symbol Conditions SEMIPACK 2 SKKD 75 F P relim inary data SKKD 75 F
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Untitled
Abstract: No abstract text available
Text: s e M IK R D N V r sm Ifrm s V rrm SEMIPACK 2 maximum values for continuous operation 450 A Ifa v V Fast Diode1* Modules (sin. 180; Tease = 85 °C; 50 H z) 220 A 1000 SKKE 301 F 10 1100 SKKE 301 F 11 1200 SKKE 301 F 12 Symbol Conditions SKKE 301 F Preliminary data
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fll3bti71
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information applikation
Abstract: applikation heft A109D a 109 opv information applikation mikroelektronik VEB mikroelektronik "information applikation" "halbleiterwerk frankfurt" mikroelektronik Heft 12 "Mikroelektronik" Heft
Text: I 1 I 'li Information Applikation OPERATIONS VERSTÄRKER •lit J m ■ liUf [ f ^ a lk a r a ^ E lo k c t s n a n il- c Information Applikation Heft 21: OPERATIONS-VERSTÄRKER-IS T e ill veb halbleiterwerk frankfurt/oder im v e b k o m b in a t m ik ro e le k tro n ik
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skm 151 fc
Abstract: FT460
Text: 6RI75G 75A POWER DIODE MODULE • 4^ ^ : : F e a t u r e s i • i • • HêBM ^ *> a Glass Passivation Chip Easy Connection Insulated Type ■ ■ f f l i Ê : A p p lic a t io n s • -f >v<— 9 —H fS fflB iK (■ ’ • /«■y 7- U - Æ Œ f f l Œ S
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6RI75G
50/60Hz
95t/R89
Shl50
skm 151 fc
FT460
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D1FL40
Abstract: No abstract text available
Text: n - n x V 'C X - Y - H £I Surface Mount Super Fast Recovery Diode Single Diode OUTLINE DIMENSIONS D1FL40 U n it • m m Package I 1F 400V 0.8A • / J v ik S M D • f iy - r x •trr5 0 n s V i I/ j f - u > ?7 •?y k<p j f r f / ^ - Standard soldering pad
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D1FL40
D1FL40
J515-5
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UTI03
Abstract: 1di480a 3A1T
Text: 1DI48OA-O55 480a l- ; : Outline Drawings u POWER TRANSISTOR MODULE I F e a tu re s • fiSiWEE High Voltage • 7 U — sfr-f l) >9*?4 it —K A iK • Including Free W heeling Diode ASO A’i7 £ i . '• Excellent Safe.Operating Area ! • JfiStT6 Insulated Type
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1DI48OA-O55
UTI03
1di480a
3A1T
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2SB1549
Abstract: No abstract text available
Text: b 7 > is / T ransistors 2SB1549 • 2SB1549 Ik ? * * y 7 J t f U - f # PNP y <; 3 > h7 > y M W - V ' s h > Epitaxial Planar PNP Silicon Transistor Darlington Freq. Power Amp. M ) • ^•Jfi'+jiEil/Dimensions (U n it: mm) ft« 1) ? - ' ) > h > } g ^ T 'h F E
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2SB1549
100ms)
--50pA
2SB1549
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fs10j
Abstract: SKN340F18 B949 b951 b950 T 341 D semikron rectifier 100A 800V B948 SKN340F SKN340F12
Text: 51E D fll3b b ? l 0003=145 s e m ik r d n SEMIKRON INC 400 A 600 800 445 A k SKN 340 F 08 SKN 340 F SKN 341F SKN 341 F 08 SKN 341 F 10 - 1200 SKN 340 F 12 1400 SKN 340 F 14 - 1600 SKN 340 F 16 - 1800 SKN 340 F 18 - Ifav Î '0 3 - 2 .3 , SKN 341 F 06 - 1000
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SKN340
SKN340F12
SKN340F14
SKN340F16
SKN340F18
SKN341F06
SKN341
SKN341F10
SKN340F
fs10j
SKN340F18
B949
b951
b950
T 341 D
semikron rectifier 100A 800V
B948
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a210k
Abstract: Mikroelektronik Heft "Mikroelektronik" Heft information applikation mikroelektronik mikroelektronik Heft 12 A211D A209K VEB mikroelektronik mikroelektronik DDR IC A211D
Text: INFORMATION APPLIKATIO N MIKROELEKTRONIK In fo r m a tio n - Applikation Die monolithisch integrierten N F-V erstärker A 210D A210K A211D Eigenschaften und ! Anwendung Mikroelektronik Heft 1 veb haîbîeîterwerk frankfurt/oder l e i t b e t r i e b im v e b k o m b i n a t m ik r o e le k t r o n ik
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A210K
A211D
Mikroelektronik Heft
"Mikroelektronik" Heft
information applikation mikroelektronik
mikroelektronik Heft 12
A211D
A209K
VEB mikroelektronik
mikroelektronik DDR
IC A211D
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Untitled
Abstract: No abstract text available
Text: s e M IK R O n 800 400 A 400 A SKN 340 F 08 SKN 2M400/08 SKN 340 F 12 SKN 2M400/10 SKN 2M400/12 SKN 340 F 14 SKN 2M400/14 1000 1200 1400 1500 1600 SKN 340 F 16 1800 SKN 340 F 18 SKN 340 F SKN 2M400 SKN 2M400/15 Symbol Conditions Ifav Fast Recovery Rectifier
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2M400/08
2M400/10
2M400/12
2M400/14
2M400
2M400/15
2M400
13bb71
0DQb37b
GGDb377
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nt97
Abstract: No abstract text available
Text: Letter symbols Thyristors/Diodes Thyristors/Diodes op eratin g tem perature f fre que ncy fo repetition fre q u e n c y 'g F c la m p in g force tgd G w eigh t Ik ¡D forw ard off-state current ¡G gate cu rre n t sinusoidal Ig d gate non trig g e r current
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Untitled
Abstract: No abstract text available
Text: s e M IK R O V Ifrm s rsm 220 A V rrm If a v sin. 180; Fast Diode = 65 °C; 50 Hz 140 A 1600 S K K E 120 F 16 1700 SKKE 120 F 17 Symbol Conditions Sin. 180; Tease = Tease = Ifs m i2t Ir m 85 °C 65 °C 25 °C; 10 ms = 150 °C; 10 ms Tvj = Tvj Q rr Ir SKKE 120 F
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SHARP S
Abstract: GL380
Text: GL380/GL381 SHARP GL380/GL381 High Output, 03m m Resin Mold Type infrared Emitting Diode • Features ■ Outflne Dimensions Unit : mm 1. High output (Ik : MIN. 4.5mW/sr at Ip=50mA, GL380) ( I K : MIN. 8.5mW /sr at I f = 50mA, GL381) 2. Compact ^3mm resin mold package
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GL380/GL381
GL380)
GL381)
SHARP S
GL380
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H11K1
Abstract: H11K
Text: Optoisolator Specifications H11K1, H11K2 Optoisolator GaAIAs Infrared Emitting Diode and Two NPN Silicon Photo-Darlington Amplifiers T h e H I IK series consists o f a gallium -alum inum -arsenide, infrared em itting diode coupled with two high voltage silicon Darlingtonconnected phocotransistors which have integral base-emitter resistors
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H11K1,
H11K2
INFRAR000,
H11K1
H11K
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Single Diode W tm SF20H1R5 OUTLINE 15V 20A Feature • Tj=125°C • Tj=125°C • fiV F = 0 .4 1 V • Low V f=0.41 V • 71 [Æ - J U K • Full Molded • « tB J ± 2 k V S § Œ • Dielectric Strength 2kV • T ï K I f c S J Ü C D jf f i J r iK i t
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SF20H1R5
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Untitled
Abstract: No abstract text available
Text: s e m ik r d n V rsm Ifrms maximum values for continuous operation 110 A I 110 A V rrm (sin. 180; T ca. e = 80 °C; 50 Hz) 40 A 40 A Ifa v V 400 SKKD 40 F 04 SKMD 40 F 04 600 SKKD 40 F 06 SKMD 40 F 06 800 SKKD 40 F 08 SKMD 40 F 08 1000 SKKD 40 F 10 S K M D 40 F 10
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O-240
Q005TEQ
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cp151d
Abstract: TP10N
Text: LCP1511D LCP1512D SGS’THOMSON M S I3 IIL I g T F Ifi!© iK ]|]( 3 i PROGRAMMABLE TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION Application Specific Discretes A.S.D. FEATURES . DUAL PROGRAMMABLE TRANSIENT SUP PRESSOR. . WIDE NEGATIVE FIRING VOLTAGE RANGE:
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LCP1511D
LCP1512D
30Afor
150mA.
cp151d
TP10N
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90f06
Abstract: No abstract text available
Text: s em ik r o n Ifrm s V rsm 150 A V rrm Ifa v V Fast Diode1* Modules sin. 180; Tease = 85 °C; 50 Hz 90 A 400 SKKD 90 F 04 600 SKKD 90 F 06 Symbol Conditions Ifav Tease = 85 °C; sin. 180 Ifsm T Vj = 25 °C; 10 ms Tvj = 150 °C; 10 ms i2t T Vj = 25 °C; 8,3 . 10 ms
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D-90253
90f06
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semikron skmd 100
Abstract: No abstract text available
Text: s e m ik r d n V rsm If r m s m axim u m valu e s fo r co ntin u o us operation 110 A V rrm | 110 A Ifa v (sin. 180; Teas* = 80 °C; 50 Hz) SKKD 40 F SKMD 40 F 40 A 40 A 400 SKKD 40 F 04 SKMD 40 F 04 600 SKKD 40 F 06 SKMD 40 F 06 800 SKKD 40 F 08 SKMD 40 F 08
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O-240
semikron skmd 100
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