Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD1088 TO – 220 TRANSISTOR NPN 1. BASE FEATURES z High DC Current Gain z DARLINGTON 2. COLLECTOR 3. EMITTER APPLICATIONS z For Switching Igniter Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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O-220
2SD1088
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2SD1976
Abstract: DSA003645
Text: 2SD1976 Silicon NPN Triple Diffused ADE-208-918 Z 1st. Edition Sep. 2000 Application High voltage switching, igniter Feature • Built-in High voltage zener diode (300 V) • High Speed switching Outline TO-220AB 2 1 1 2 3 1. Base 2. Collector (Flange) 3. Emitter
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2SD1976
ADE-208-918
O-220AB
2SD1976
DSA003645
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2SD1113
Abstract: DSA003644
Text: 2SD1113 K Silicon NPN Triple Diffused ADE-208-903 (Z) 1st. Edition Sep. 2000 Application Igniter Outline TO-220AB 2 1 1 2 3 1. Base 2. Collector (Flange) 3. Emitter 6 kΩ (Typ) 450 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit
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2SD1113
ADE-208-903
O-220AB
DSA003644
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circuit diagram electronic choke for tube light
Abstract: Electronic ignitors for HID lamp circuits osram MZN 400 Su-lt BAG TURGI MZN 1000 S Metal Halide Lamp Ignitor BAG TURGI MZN 400 S bag turgi MZN 4000 electronic ballast for uv tube light 380 mzn 4000 OSRAM economic
Text: POWERSTAR HQI/HCI POWERBALL HCI Technical Information ● All rights reserved. No part of this document may be reproduced, copied or distributed in any form printed matter, photocopy, etc. without the written permission of HID M-M, OSRAM Germany. ● This brochure supersedes all previous editions.
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MT-35/30/1B-H
90/S-G12-20/100
35/WDL
circuit diagram electronic choke for tube light
Electronic ignitors for HID lamp circuits
osram MZN 400 Su-lt
BAG TURGI MZN 1000 S
Metal Halide Lamp Ignitor
BAG TURGI MZN 400 S
bag turgi MZN 4000
electronic ballast for uv tube light
380 mzn 4000
OSRAM economic
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Untitled
Abstract: No abstract text available
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . capacit o rs lighting applications Film Ca pacito r s capabilities w w w. v i s h a y. c o m Lighting Applications Film Capacitors CFL 2 , 42 # # # # , # 42 # Electronic Ballast Europe # 6 # # 2
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VMN-PL0003-0711
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2SD1113
Abstract: No abstract text available
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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D-85622
2SD1113
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2SD1976
Abstract: No abstract text available
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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D-85622
2SD1976
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2SD1976
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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D-85622
2SD1976
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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do2000
D-85622
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2SD1113
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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D-85622
2SD1113
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Epcos
Abstract: ZKP 180 schematic diagram Electronic Ballast xenon xenon hid ballast diode ZKP epcos SURGE ARRESTERS SURGE ARRESTER spark gap varistor x72 apqp MANUAL A81-A230X
Text: Überspannungsableiter und Schaltfunkenstrecken Surge Arresters and Switching Spark Gaps Produktschrift 2000 / Product Profile 2000 http://www.epcos.com Vorwort Preview Kommunikationseinrichtungen und Systeme zur Datenübertragung können durch Überspannungen und die
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FS08X-1
Q69-X334
Q69-X340
Q69-X329
Q69-X344
Epcos
ZKP 180
schematic diagram Electronic Ballast xenon
xenon hid ballast
diode ZKP
epcos SURGE ARRESTERS
SURGE ARRESTER spark gap
varistor x72
apqp MANUAL
A81-A230X
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vogt -sumida-5432001800
Abstract: vogt 573 10 270 20 vogt 545 vogt a3 VOGT W1 573 10 270 20 545 01 122 00 vogt VOGT K3 vogt IL 050 321 31 01 vogt 545 23 127 00 vogt transformer 545 35
Text: COMPONENTS | MODULES | CORES 2011 SUMIDA Components & Modules GmbH Dr. Hans-Vogt-Platz 1 | D-94130 Obernzell Phone: +49/85 91/937-100 Fax: +49/85 91/937-103 E-Mail: contact@sumida-eu.com Internet: www.sumida-eu.com COMPONENTS | MODULES | CORES -2- INTRODUCTION
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D-94130
vogt -sumida-5432001800
vogt 573 10 270 20
vogt 545
vogt a3
VOGT W1 573 10 270 20
545 01 122 00 vogt
VOGT K3
vogt IL 050 321 31 01
vogt 545 23 127 00
vogt transformer 545 35
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schematic diagram Electronic Ballast xenon
Abstract: diode ZKP ZKP 180 apqp MANUAL epcos SURGE ARRESTERS A80-A230X M51-A230XSMD xenon igniter RAB0203-I circuit diagram ballast xenon
Text: Überspannungsableiter und Schaltfunkenstrecken Surge Arresters and Switching Spark Gaps Produktschrift 2000 / Product Profile 2000 http://www.epcos.com Vorwort Preview Kommunikationseinrichtungen und Systeme zur Datenübertragung können durch Überspannungen und die
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igniter z 2000
Abstract: 2SD1410
Text: SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER 2SD1410 INDUSTRIAL APPLICATIONS Unit in rr IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. 03.2±Q2 FEATURES: . High DC Current Gain : hFE=2000(Min.) (VCE=2V, Ic=2A) MAXIMUM RATINGS (Ta=25°C)
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2SD1410
20fle
igniter z 2000
2SD1410
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2SD141
Abstract: 2SD1410A
Text: TO SH IBA 2SD1410A TOSHIBA TRANSISTOR 2 S SILICON NPN TRIPLE DIFFUSED TYPE D 1 4 1 O A Unit in mm IGNITER APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS • r 10 ±0.3 -y 5< ÍY^ High DC Current Gain : hjpg = 2000 Min. o iV ' •nP = 2—V. •* Tn = 2 A}'
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2SD1410A
2SD141
2SD1410A
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2SD1088
Abstract: igniter 2sd1088 TOSHIBA
Text: SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER 2SD1088 INDUSTRIAL APPLICATIONS IGNITER APPLICATIONS. U n i t in m m HIGH VOLTAGE SWITCHING APPLICATIONS. 1U.3MAX. 5Ä 3T FEATURES: . H i g h DC C u r r e n t G a i n : h F E = 2 0 0 0 ( M i n .) MAXIMUM RATINGS
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2SD1088
20fla
2SD1088
igniter
2sd1088 TOSHIBA
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BA8B
Abstract: 2SD1361 IJ500
Text: TOSHIBA {DIS CR ET E/OPT O} Sb d¥ TQT72SD QOOTTBl T ^ T “ c r m i •■ '0 ^ T-33-29 9097250 TOSHIBA DISCRETE/O P T O ) SILICON NPN TRIPLE DIFFUSED TYPE _ (DARLINGTON POWER) INDUSTRIAL APPLICATIONS IGNITER APPLICATIONS. :HIGH VOLTAGE SWITCHING APPLICATIONS.
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T-33-29
BA8B
2SD1361
IJ500
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2SD799
Abstract: DK Q
Text: 2SD799 SILICON NPN TRIPLE DIFFUSE TYPE DARLINGTON POWER INDUSTRIAL APPLICATIONS _ Unit in mm IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES: • High DC Current Gain : hpjr=600(Min.) (V^]j=2V, Iq =2A) • Monolithic Construction with Built-In BaseEmitter Shunt Resistor.
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2SD799
2SD799
DK Q
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Untitled
Abstract: No abstract text available
Text: 2SD1409A TOSHIBA TO SHIBA TRANSISTOR IGNITER APPLICATIONS 2SD1409A SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON PO W ER HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 ± 0.3 • 03.2 ± 0.2 2.7± 0.2 High DC Current Gain * = 600 (Min.)
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2SD1409A
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2SD1085
Abstract: RE100T
Text: 2SD1085 K Silicon NPN Triple Diffused HITACHI Application High voltage switching, igniter Outline TO -220AB 2 h II I I 1 j 2 ,g 1 Base 2 Collector (Flange) 3 Emitter - V\A—I—'WV-Ì- J ki3 4 5 (Typ) 250 Cl (Typ) ¿ 3 Absolute Maximum Ratings (Ta = 25°C)
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2SD1085
-220AB
RE100T
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Untitled
Abstract: No abstract text available
Text: 2SD1976 Silicon NPN Triple Diffused HITACHI Application High voltage switching, igniter Feature • Built-in High voltage zener diode 300 V • High Speed switching Outline TO -220AB 2SD1976 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage
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2SD1976
-220AB
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Untitled
Abstract: No abstract text available
Text: 2SD1976 Silicon NPN Triple Diffused HITACHI Application High voltage switching, igniter Feature • Built-in High voltage zener diode 300 V • High Speed switching Outline T O -2 2 0 A B 2SD1976 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Rating
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2SD1976
D-85622
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2SD1409A
Abstract: No abstract text available
Text: TOSHIBA TOSHIBA TRANSISTOR IGNITER APPLICATIONS 2SD1409A 2SD1409A SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 ±0.3 • 03.2 ±0.2 2.7±0.2 High DC Current Gain * = 600 (Min.)
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2SD1409A
2SD1409A
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Untitled
Abstract: No abstract text available
Text: 2SD2323 Silicon NPN Triple Diffused H ITA C H I Application High voltage switching, igniter Features • Built-in High voltage zener diode 300 V • High speed switching Outline T O -2 2 0 F M JÜL 2 B ase 1• 12 3 2. C o lle c to r 3. E m itte r ° t Xt
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2SD2323
25Hitachi
D-85622
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