BA8B
Abstract: 2SD1361 IJ500
Text: TOSHIBA {DIS CR ET E/OPT O} Sb d¥ TQT72SD QOOTTBl T ^ T “ c r m i •■ '0 ^ T-33-29 9097250 TOSHIBA DISCRETE/O P T O ) SILICON NPN TRIPLE DIFFUSED TYPE _ (DARLINGTON POWER) INDUSTRIAL APPLICATIONS IGNITER APPLICATIONS. :HIGH VOLTAGE SWITCHING APPLICATIONS.
|
OCR Scan
|
PDF
|
T-33-29
BA8B
2SD1361
IJ500
|
BST 063 133
Abstract: No abstract text available
Text: _ ^ PRELIMINARY -AS . •— FEATURES: ■ ULTRA LOW NOISE FIGURE ■ GATE LENGTH < 0.2 ixm ■ T-SHAPED GATE ■ CHIP FORM 0.75 dB at f = 18 GHz ■ SUPER HIGH ASSOCIATED GAIN 11 dB at f = 18 GHz ■ H IG H M AXIM UM AVAILABLE GAIN 13 dB a t f = 18 GHz
|
OCR Scan
|
PDF
|
JS8911-AS
Volta36
1DT725D
BST 063 133
|
ditj
Abstract: 2SA1308 2SC3308 cloi lbz e1
Text: ~5b TOSHIBA {DISCRETE/OPT03- d T I ^ O T T E S D □□□7bfi7 L. — 9097250 TOSHIBA <DI S C R E T E / O P T O > 2SC3308 5 òC 0 7 t> 8 7 ? - ò*f INDUSTRIAL APPLICATIONS . Unit in mra ' 1 0 .3 M A X . Low Collector Saturation Voltage ' : VC E sat =0.4V(Max.)
|
OCR Scan
|
PDF
|
DISCRETE/0PT03-
2SC3308
2SA1308.
11ILUI.
111111111U
ditj
2SA1308
cloi
lbz e1
|