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    Infineon Technologies AG IGC109T120T6RMX1SA3

    IGBT CHIPS - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: IGC109T120T6RMX1SA)
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    Avnet Americas IGC109T120T6RMX1SA3 Waffle Pack 34
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    IGC109T120T6RM Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IGC109T120T6RM Infineon Technologies IGBT Chips; Technology: IGBT 4 Medium Power; VDS (max): 1,200.0 V; IC (max): 110.0 A; VCE(sat) (max): 2.05 V; VGE(th) (min): 5.0 V; Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: IGC109T120T6RM IGBT4 Medium Power Chip Features: • 1200V Trench + Field stop technology • low switching losses • soft turn off • positive temperature coefficient • easy paralleling Chip Type VCE ICn IGC109T120T6RM 1200V 110A This chip is used for:


    Original     		PDF IGC109T120T6RM IGC109T120T6RM L7742B,

    Untitled

    Abstract: No abstract text available
    Text: IGC109T120T6RM IGBT4 Medium Power Chip Features: • 1200V Trench + Field stop technology • low switching losses • soft turn off • positive temperature coefficient • easy paralleling Chip Type VCE ICn IGC109T120T6 RM 1200V 110A This chip is used for:


    Original     		PDF IGC109T120T6RM IGC109T120T6 L7742B,