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    IGBT ULTRAFAST 100A Search Results

    IGBT ULTRAFAST 100A Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TW030Z120C Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET, 1200 V, 60 A, 0.041 Ω@18V, TO-247-4L(X) Visit Toshiba Electronic Devices & Storage Corporation

    IGBT ULTRAFAST 100A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GC 72 smd diode

    Abstract: No abstract text available
    Text: 50MT060ULSTAPbF www.vishay.com Vishay Semiconductors "Low Side Chopper" IGBT MTP Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 ultrafast speed IGBT technology • HEXFRED recovery diode with ultrasoft reverse • Very low conduction and switching losses


    Original     		PDF 50MT060ULSTAPbF E78996 2002/95/EC 11-Mar-11 GC 72 smd diode

    GC 72 smd diode

    Abstract: No abstract text available
    Text: 50MT060ULSTAPbF www.vishay.com Vishay Semiconductors "Low Side Chopper" IGBT MTP Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 ultrafast speed IGBT technology • HEXFRED recovery diode with ultrasoft reverse • Very low conduction and switching losses


    Original     		PDF 50MT060ULSTAPbF E78996 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 GC 72 smd diode

    Untitled

    Abstract: No abstract text available
    Text: 50MT060ULSTAPbF www.vishay.com Vishay Semiconductors "Low Side Chopper" IGBT MTP Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 ultrafast speed IGBT technology • HEXFRED recovery diode with ultrasoft reverse • Very low conduction and switching losses


    Original     		PDF 50MT060ULSTAPbF E78996 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: 50MT060ULSTAPbF Vishay High Power Products "Low Side Chopper" IGBT MTP Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 ultrafast speed IGBT technology • HEXFRED recovery diode with ultrasoft reverse • Very low conduction and switching losses


    Original     		PDF 50MT060ULSTAPbF E78996 2002/95/EC 11-Mar-11

    ultrafast igbt

    Abstract: 50mt060ulstapbf GC smd diode 94540
    Text: 50MT060ULSTAPbF Vishay High Power Products "Low Side Chopper" IGBT MTP Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 ultrafast speed IGBT technology • HEXFRED recovery diode with ultrasoft reverse • Very low conduction and switching losses


    Original     		PDF 50MT060ULSTAPbF E78996 2002/95/EC 18-Jul-08 ultrafast igbt 50mt060ulstapbf GC smd diode 94540

    gFE smd diode

    Abstract: 50MT060ULSTAPBF
    Text: 50MT060ULSTAPbF Vishay High Power Products "Low Side Chopper" IGBT MTP Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 ultrafast speed IGBT technology • HEXFRED recovery diode with ultrasoft reverse RoHS COMPLIANT • Very low conduction and switching losses


    Original     		PDF 50MT060ULSTAPbF E78996) 18-Jul-08 gFE smd diode 50MT060ULSTAPBF

    Untitled

    Abstract: No abstract text available
    Text: 50MT060ULSTAPbF Vishay High Power Products "Low Side Chopper" IGBT MTP Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 ultrafast speed IGBT technology • HEXFRED recovery diode with ultrasoft reverse RoHS COMPLIANT • Very low conduction and switching losses


    Original     		PDF 50MT060ULSTAPbF E78996) 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Bulletin I27123 rev. B 10/02 50MT060ULS "LOW SIDE CHOPPER" IGBT MTP Ultrafast Speed IGBT Features • Gen. 4 Ultrafast Speed IGBT Technology • HEXFRED TM Diode with UltraSoft Reverse Recovery • Very Low Conduction and Switching Losses • Optional SMT Thermistor NTC


    Original     		PDF I27123 50MT060ULS E78996

    IC 555

    Abstract: 50MT060ULSTA 50MT060ULSA
    Text: Bulletin I27191 02/05 50MT060ULSA 50MT060ULSTA "LOW SIDE CHOPPER" IGBT MTP Ultrafast Speed IGBT Features • Gen. 4 Ultrafast Speed IGBT Technology • HEXFRED TM Diode with UltraSoft Reverse Recovery • Very Low Conduction and Switching Losses • Optional SMD Thermistor NTC


    Original     		PDF I27191 50MT060ULSA 50MT060ULSTA E78996 12-Mar-07 IC 555 50MT060ULSTA 50MT060ULSA

    IC 555

    Abstract: IRF E78996 50MT060ULS 50MT060ULST
    Text: I27123 rev. C 02/03 50MT060ULS "LOW SIDE CHOPPER" IGBT MTP Ultrafast Speed IGBT Features • Gen. 4 Ultrafast Speed IGBT Technology • HEXFRED TM Diode with UltraSoft Reverse Recovery • Very Low Conduction and Switching Losses • Optional SMT Thermistor NTC


    Original     		PDF I27123 50MT060ULS E78996 IC 555 IRF E78996 50MT060ULS 50MT060ULST

    IRG4ZC70UD

    Abstract: smd diode T3 P channel 50A IGBT smd transistor 18E smd transistor 5c SMD-10 PACKAGE transistor 5c smd package SMD diode 18b 5c
    Text: PD -9.1668A IRG4ZC70UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features ● ● ● ● ● ● ● UltraFast IGBT optimized for high switching frequencies n-channel IGBT co-packaged with HEXFRED ultrafast, ultra-soft recovery antiparallel diodes for use in


    Original     		PDF IRG4ZC70UD SMD-10 IRG4ZC70UD smd diode T3 P channel 50A IGBT smd transistor 18E smd transistor 5c SMD-10 PACKAGE transistor 5c smd package SMD diode 18b 5c

    Untitled

    Abstract: No abstract text available
    Text: Bulletin I27191 02/05 50MT060ULSA 50MT060ULSTA "LOW SIDE CHOPPER" IGBT MTP Ultrafast Speed IGBT Features • Gen. 4 Ultrafast Speed IGBT Technology • HEXFRED TM Diode with UltraSoft Reverse Recovery • Very Low Conduction and Switching Losses • Optional SMD Thermistor NTC


    Original     		PDF I27191 50MT060ULSA 50MT060ULSTA E78996 08-Mar-07

    IC 555

    Abstract: IRF E78996 555 IC 50MT060ULSA 50MT060ULSTA
    Text: Bulletin I27191 02/05 50MT060ULSA 50MT060ULSTA "LOW SIDE CHOPPER" IGBT MTP Ultrafast Speed IGBT Features • Gen. 4 Ultrafast Speed IGBT Technology • HEXFRED TM Diode with UltraSoft Reverse Recovery • Very Low Conduction and Switching Losses • Optional SMD Thermistor NTC


    Original     		PDF I27191 50MT060ULSA 50MT060ULSTA E78996 IC 555 IRF E78996 555 IC 50MT060ULSA 50MT060ULSTA

    50mt060uls

    Abstract: No abstract text available
    Text: Bulletin I27123 rev. A 04/02 50MT060ULS "LOW SIDE CHOPPER" IGBT MTP Ultrafast Speed IGBT Features VCES = 600V • Gen. 4 Ultrafast Speed IGBT Technology • HEXFRED TM Diode with UltraSoft Reverse Recovery • Very Low Conduction and Switching Losses • Optional SMT Thermistor NTC


    Original     		PDF I27123 50MT060ULS E78996 50mt060uls

    Untitled

    Abstract: No abstract text available
    Text: PD - 91682A IRG4PSC71UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency minimum switching and conduction losses than


    Original     		PDF 1682A IRG4PSC71UD Super-247 O-247

    diode lt 247

    Abstract: IRG4PSC71UD TB diode 1084 GE
    Text: PD - 91682 IRG4PSC71UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency minimum switching and conduction losses than


    Original     		PDF IRG4PSC71UD Super-247 O-247 diode lt 247 IRG4PSC71UD TB diode 1084 GE

    Untitled

    Abstract: No abstract text available
    Text: PD - 91681A IRG4PSC71U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter


    Original     		PDF 1681A IRG4PSC71U 40kHz 200kHz Super-247 O-247 twic10)

    IRG4PSC71U

    Abstract: T5 transistor TO-247
    Text: PD - 91681A IRG4PSC71U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter


    Original     		PDF 1681A IRG4PSC71U 40kHz 200kHz Super-247 O-247 IRG4PSC71U T5 transistor TO-247

    IRG4PSC71U

    Abstract: No abstract text available
    Text: PD - 91681 IRG4PSC71U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4PSC71U 40kHz 200kHz Super-247 O-247 Super-247 IRG4PSC71U

    APT100DQ120

    Abstract: APT100GT120JR
    Text: APT100GT120JR 1200V, 100A, VCE ON = 3.2V Typical Thunderbolt IGBT The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using NonPunch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		PDF APT100GT120JR 50KHz E145592 -226ns 928ns APT100DQ120 APT100GT120JR

    A/smd diode t53

    Abstract: No abstract text available
    Text: PD -9.1668A International I R Rectifier IRG4ZC70UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Surface Mountable UltraFast CoPack IGBT • UltraFast IGBT optimized for high switching frequencies • IGBT co-packaged with HEXFREDa ultrafast,


    OCR Scan     		PDF IRG4ZC70UD SMD-10 A/smd diode t53

    diode mur

    Abstract: 600V 25A Ultrafast Diode MUR850 diode diode 400V 4A igbt 1000v 80a diode 400v 2A ultrafast igbt 200v 30a 600v 30a IGBT 30A, 600v DIODE igbt 200V 4A
    Text: [ MCT/IGBT/DIODES 5 ULTRAFAST SINGLE DIODES PAGE SELECTION GUIDE. 5-3 ULTRAFAST SINGLE DIODE DATA SHEETS 2A, 50V - 200V Ultrafast Diodes.


    OCR Scan     		PDF GE1001, GE1002, GE1003, GE1004 GE1101, GE1102, GE1103, GE1104 GE1301, GE1302, diode mur 600V 25A Ultrafast Diode MUR850 diode diode 400V 4A igbt 1000v 80a diode 400v 2A ultrafast igbt 200v 30a 600v 30a IGBT 30A, 600v DIODE igbt 200V 4A

    Untitled

    Abstract: No abstract text available
    Text: PD - 91682 International IQ R Rectifier IRG4PSC71UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency minimum switching and conduction losses than


    OCR Scan     		PDF IRG4PSC71UD Super-247 O-247

    Super-247 Package

    Abstract: IRG4PSC71UD
    Text: International IÖR Rectifier PD - 91682A IRG4PSC71UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency minimum switching and conduction losses than


    OCR Scan     		PDF Super-247 O-247 1682A IRG4PSC71UD --600V Liguria49, Super-247 Package IRG4PSC71UD