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    IGBT TYPES CASE Search Results

    IGBT TYPES CASE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TB67H480FNG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver/Unipolar Type/Vout(V)=50/Iout(A)=2.5/ PHASE input type Visit Toshiba Electronic Devices & Storage Corporation
    TB67H481FNG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver/Unipolar Type/Vout(V)=50/Iout(A)=2.5/ IN input type Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    IGBT TYPES CASE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    din IEC 68

    Abstract: 150a gto GTO 100A IXYS 40N60A D-68623 DWEP 17-12 DWEP DWlP 2580B L 7CG
    Text: Contents Page Symbols and Definitions Nomenclature General Information Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types S-Series, SCSOA Capability, Fast Types


    Original     		PDF

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF

    IXAN0010

    Abstract: 0010 ixan0010 4 ixan0010 2 MOSFET IGBT DRIVERS THEORY AND APPLICATIONS MOSFET IGBT THEORY AND APPLICATIONS 18V, 400mW Zener diodes protect mosfet igbt drivers theory IXDD408 IXDD
    Text: IXAN0010 MOSFET/IGBT DRIVERS THEORY AND APPLICATIONS By Abhijit D. Pathak 1. Introduction 1.1. MOSFET and IGBT Technology. 1.2. MOSFET Models and critical parameters 1.3. Turn-on and Turn-off phenomenon and their explanations 1.4. Power losses in Drivers 2. Types of Drivers


    Original     		PDF IXAN0010 D-68623; IXAN0010 0010 ixan0010 4 ixan0010 2 MOSFET IGBT DRIVERS THEORY AND APPLICATIONS MOSFET IGBT THEORY AND APPLICATIONS 18V, 400mW Zener diodes protect mosfet igbt drivers theory IXDD408 IXDD

    V1000V

    Abstract: WSL2106
    Text: WESTCODEPositive development in power electronics WSL2106.  Rat Rep: 99S04AD Issue: 1   WESTCODE DATE: 12 Jan 2000 Provisional Dual IGBT and MOSFET Gate Driver Types: WSL2106   4. Maximum ratings and characteristics. Maximum Ratings VS VIH IGP PO VOP


    Original     		PDF WSL2106. WSL2106 99SO4 V1000V WSL2106

    westcode fuse

    Abstract: westcode igbt
    Text: WESTCODE Date:- 04 Dec. 2000 Data Sheet Issue:- 3 Dual IGBT and MOSFET gate driver Types: WSL2315 Absolute Maximum Ratings Ratings 1 VDD Supply voltage referred to ground 12 Opto VDD additional Opto converter U1553/1 supply VIM Logic input voltage 12 Opto Logic input optical


    Original     		PDF U1553/1 WSL2315 WSL2315 BNX002-01 HFBR2521 1N4004 HFBR2521 westcode fuse westcode igbt

    welding transformer SCR

    Abstract: thyristor control arc welding rectifier circuit single phase inverter IGBT driver 50 kva 200 A WELDING INVERTER DESIGN BY IGBT 1ED020I12-F chopper transformer FOR UPS press-pack igbt electrolysis variable speed drive with thyristor single phase parallel inverter using 2 SCR
    Text: High Power Semiconductors Best-in-class products to meet your application demands [ www.infineon.com/highpower ] EasyPIM , EasyPACK EconoPIM™, EconoPACK™ The easy way with compact modules Trendsetting in case design and IGBT technology Product range


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: VS-GB300NH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 300 A FEATURES • Low VCE on SPT + IGBT technology • 10 s short circuit capability • VCE(on) with positive temperature coefficient • Low inductance case


    Original     		PDF VS-GB300NH120N 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: VS-GB300LH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 300 A FEATURES • Low VCE on SPT + IGBT technology • 10 s short circuit capability • VCE(on) with positive temperature coefficient • Low inductance case


    Original     		PDF VS-GB300LH120N 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: VS-GB300NH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 300 A FEATURES • Low VCE on SPT + IGBT technology • 10 s short circuit capability • VCE(on) with positive temperature coefficient • Low inductance case


    Original     		PDF VS-GB300NH120N 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    induction cooker circuit diagram

    Abstract: control circuit of induction cooker diagram induction cooker induction heat circuit induction cooker coil design igbt induction cooker induction cooker circuit induction cooker heat sensor bosch induction cooker circuit diagram induction cooker circuit with IGBT
    Text: Direct Link 1116 Applications & Cases Components for induction cookers April 2008 Energy efficiency in the kitchen Induction cookers are extremely energy efficient. EPCOS supplies a full range of components, including film capacitors, chokes, transformers,


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: VS-GB300LH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 300 A FEATURES • Low VCE on SPT + IGBT technology • 10 s short circuit capability • VCE(on) with positive temperature coefficient • Low inductance case


    Original     		PDF VS-GB300LH120N 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: VS-GB100NH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 100 A FEATURES • 10 s short circuit capability • VCE on with positive temperature coefficient • Maximum junction temperature 150 °C • Low inductance case


    Original     		PDF VS-GB100NH120N 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: VS-GB75TP120N www.vishay.com Vishay Semiconductors Half Bridge IGBT Power Module, 1200 V, 75 A FEATURES • High short circuit capability, self limiting to 6 x I • 10 s short circuit capability • VCE on with positive temperature coefficient • Low inductance case


    Original     		PDF VS-GB75TP120N 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: VS-GB100LH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 100 A FEATURES • 10 s short circuit capability • VCE on with positive temperature coefficient • Maximum junction temperature 150 °C • Low inductance case


    Original     		PDF VS-GB100LH120N 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: VS-GB100NH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 100 A FEATURES • 10 s short circuit capability • VCE on with positive temperature coefficient • Maximum junction temperature 150 °C • Low inductance case


    Original     		PDF VS-GB100NH120N 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: VS-GB300TH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V and 300 A FEATURES • 10 s short circuit capability • VCE on with positive temperature coefficient • Maximum junction temperature 150 °C • Low inductance case


    Original     		PDF VS-GB300TH120N 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: VS-GB300TH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V and 300 A FEATURES • 10 s short circuit capability • VCE on with positive temperature coefficient • Maximum junction temperature 150 °C • Low inductance case


    Original     		PDF VS-GB300TH120N 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SKHI 20

    Abstract: semikron SKHI 22 AR skm 191 SKM284F skm 151 mosfet skm 191 mosfet skm 22 gal 121 SKM 300 GA 102 D skm 75 101 SKM 40 GD 101 D
    Text: s e MIKRDn Section 6: SEMITRANS M Power MOSFET and IGBT Modules Summary of Types Power M O SFET Modules Types 1 Circuit V ds Id RDS on) Pd Tease j T j = 25 °C Tease = 25 °C = 25 CC ! max. I W A m il Rthjc Case Page °c/w New type V • SKM 101 AR 50 200


    OCR Scan     		PDF

    SKM100GB101D

    Abstract: SKM200GB122D SKM40GD121D SKM200GB102D SKM400GA122D SKM400GA102D SKM75GB121D SKM40GD101D 40GD101D SKM150GB122D
    Text: s e m ik r d n SEMITRANS IGBT Modules 1000 to 1700 V Cross Reference List Previous to Actual Types 1 Case width) Sixpacks SEMITRANS 6 (45 mm) DUALS SEMITRANS 2 (34 mm) SK-BOOK ’90 / SUPPL. 91 1989-1991 SKM 15GD100D SK-BOOK ’92/'93 1992-1995 SKM 22GD101D


    OCR Scan     		PDF 15GD100D 25GD100D 22GD101D 22GD121D 40GD101D 40GD121D 40GB101D 40GB121D 50GB101D 50GB121D SKM100GB101D SKM200GB122D SKM40GD121D SKM200GB102D SKM400GA122D SKM400GA102D SKM75GB121D SKM40GD101D SKM150GB122D

    case style

    Abstract: IXSH35N100A
    Text: -^ Discrete IGBT 8 S series with SCSOA capability A ji> *C 2S) Vcss min V typ ns T O -2 4 7 (H )^ ^ ^ PLUS247 (X) Case style 6 ► New TO-268AA (T) _ TO-264 (K) SOT-227B (N) ISOPLUS247™ (R) Case style Case style Case style LOW SATl JRATION l/OLTA<3E TYPES


    OCR Scan     		PDF O-268AA O-264 OT-227B PLUS247TM ISOPLUS247TM IXSH24N60 IXSH45N100 IXSH45N120* IXSH45N120B IXST45N120B case style IXSH35N100A

    TOSHIBA IGBT

    Abstract: failure-rate Toshiba MG200Q2YS40 igbt based high frequency inverter
    Text: . 1 IGBT Derating at Elevated Case-Temperature range 5-1 5 khz with some applications operating to beyond 20 khz. At these frequencies switching-losses are significant and must be conside­ red during device selection. To assist in calcula­ ting device derating at normal operating


    OCR Scan     		PDF MG200Q2YS40 30V2YS4O V11S41 TOSHIBA IGBT failure-rate Toshiba MG200Q2YS40 igbt based high frequency inverter

    diode u2 40

    Abstract: 48 H diode DIODE U2 70 IXSH24N60AU1 IXSN35N120AU1 IXSN35N100U1 IXSX35N120AU1 h 48 diode diode u2 34 ixsn80n60
    Text: Discrete IGBT with Fast Diode u^aHighs IGBT/Diode Combi-Pack S series with SCSOA capability tQBTs=su^ *q25 Vcss min V A V CE SAT) max V TO-247(H) V TO-268AA (T) TO-264 (K) SOT-227B (N> typ ns PLUS247 (X) Case style * ► N eiV ISOPLUS247™ (R) Case style


    OCR Scan     		PDF O-264 O-247 O-268AA OT-227B PLUS247TM ISOPLUS247TM IXSH24N60BD1 IXSH30N60U1 IXSN62N60U1 IXSN35N100U1* diode u2 40 48 H diode DIODE U2 70 IXSH24N60AU1 IXSN35N120AU1 IXSN35N100U1 IXSX35N120AU1 h 48 diode diode u2 34 ixsn80n60

    SKM 75 GAL 123 IGBT

    Abstract: SKM 300 CIRCUIT GB-123 skm 50 gd 123 d GB173 1700V-Types GAL 700 SKM 25 GD SKM100GB173 skm400
    Text: s e MIKROn Section 6: SEMITRANS IGBT Modules; New Range 1995/96 3rd Version: Low Inductance, lower V c E s a t, soft and fast CAL diodes1*; Preliminary Data 4 Type Rthjc VcEsat RthCH Case Circuit 4) Tc lc Tea» Modul =25°C 25°C 25°C underdevelopment


    OCR Scan     		PDF GA123 GB123 GB173 SKM300GB SKM 75 GAL 123 IGBT SKM 300 CIRCUIT GB-123 skm 50 gd 123 d 1700V-Types GAL 700 SKM 25 GD SKM100GB173 skm400

    semikron SKm 123D

    Abstract: semikron SKm GAL 123D SEMIKRON SKM 100 GAL 123D semikron SKm 50 GB 123D semikron skm 150 gb 123 skm 50 gd 123 d skm 22 gal 123 SKM 75 GB 123D semikron skm 40 skm 40 gb 123 d
    Text: s e MIKROn Section 6: SEMITRANS IGBT Modules; New Range 1995/96 3rd Version: Low Inductance, lower V c E s a t, soft and fast CAL diodes1*; Preliminary Data 4 Type Rthjc VcEsat RthCH Case Circuit 4) Tc lc Tea» Modul =25°C 25°C 25°C underdevelopment


    OCR Scan     		PDF GA123 00GA163D fll3bb71 semikron SKm 123D semikron SKm GAL 123D SEMIKRON SKM 100 GAL 123D semikron SKm 50 GB 123D semikron skm 150 gb 123 skm 50 gd 123 d skm 22 gal 123 SKM 75 GB 123D semikron skm 40 skm 40 gb 123 d