TOSHIBA IGBT
Abstract: 800 kw Toshiba AC motor MG900GXH1US53 4 kw Toshiba AC motor diode 900A
Text: TOSHIBA MG900GXH1US53 TOSHIBA IGBT TENTATIVE DATA MODULE MG900GXH1US53 SILICON N-CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Features • High Input Impedance • Enhancement Mode • Electrodes are Isolated from Case EQUIVALENT CIRCUIT
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MG900GXH1US53
25degC)
TOSHIBA IGBT
800 kw Toshiba AC motor
MG900GXH1US53
4 kw Toshiba AC motor
diode 900A
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TOSHIBA IGBT
Abstract: MG25J1BS11 igbt 25A toshiba
Text: MG25J1BS11 TOSHIBA IGBT Module Silicon N - Channel IGBT MG25J1BS11 High Power Switching Applications Motor Control Applications Unit: mm Enhancement-mode The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33F2A Maximum Ratings Ta = 25°C
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MG25J1BS11
2-33F2A
TOSHIBA IGBT
MG25J1BS11
igbt 25A toshiba
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MG75J1BS11
Abstract: TOSHIBA IGBT DATA BOOK TOSHIBA IGBT
Text: MG75J1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG75J1BS11 High Power Switching Applications Motor Control Applications Unit: mm Enhancement-mode The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33F2A Maximum Ratings Ta = 25°C
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MG75J1BS11
2-33F2A
MG75J1BS11
TOSHIBA IGBT DATA BOOK
TOSHIBA IGBT
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MG50Q1BS11
Abstract: TOSHIBA IGBT IC 7800 MG50Q1BS1 toshiba 7800 MG50Q1BS11 equivalent
Text: MG50Q1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG50Q1BS11 High Power Switching Applications Motor Control Applications Unit: mm Enhancement-mode The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33D2A Maximum Ratings Ta = 25°C
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Original
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MG50Q1BS11
2-33D2A
MG50Q1BS11
TOSHIBA IGBT
IC 7800
MG50Q1BS1
toshiba 7800
MG50Q1BS11 equivalent
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TOSHIBA IGBT DATA BOOK
Abstract: TOSHIBA IGBT MG75Q1BS11 IGBT Guide
Text: MG75Q1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG75Q1BS11 High Power Switching Applications Motor Control Applications Unit: mm Enhancement-mode The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33D2A Maximum Ratings Ta = 25°C
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Original
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MG75Q1BS11
2-33D2A
TOSHIBA IGBT DATA BOOK
TOSHIBA IGBT
MG75Q1BS11
IGBT Guide
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PDF
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MG50J1BS11
Abstract: No abstract text available
Text: MG50J1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG50J1BS11 High Power Switching Applications Motor Control Applications Unit: mm Enhancement-mode The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33F2A Maximum Ratings Ta = 25°C
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Original
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MG50J1BS11
2-33F2A
MG50J1BS11
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MG25Q1BS11
Abstract: No abstract text available
Text: MG25Q1BS11 TOSHIBA IGBT Module Silicon N - Channel IGBT MG25Q1BS11 High Power Switching Applications Motor Control Applications Unit: mm Enhancement-mode The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33D2A Maximum Ratings Ta = 25°C
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Original
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MG25Q1BS11
2-33D2A
MG25Q1BS11
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MG150J1BS11
Abstract: TOSHIBA IGBT TOSHIBA IGBT MG150J1BS11
Text: MG150J1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG150J1BS11 High Power Switching Applications Motor Control Applications Unit: mm Enhancement-mode The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33F2A Maximum Ratings Ta = 25°C
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Original
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MG150J1BS11
2-33F2A
MG150J1BS11
TOSHIBA IGBT
TOSHIBA IGBT MG150J1BS11
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TOSHIBA IGBT
Abstract: MG100J1BS11
Text: MG100J1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG100J1BS11 High Power Switching Applications Motor Control Applications Unit: mm Enhancement-mode The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33F2A Maximum Ratings Ta = 25°C
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Original
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MG100J1BS11
2-33F2A
TOSHIBA IGBT
MG100J1BS11
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MG25J1BS11
Abstract: No abstract text available
Text: MG25J1BS11 TOSHIBA IGBT Module Silicon N - Channel IGBT MG25J1BS11 High Power Switching Applications Motor Control Applications Unit: mm l Enhancement-mode l The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33F2A Maximum Ratings Ta = 25°C
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Original
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MG25J1BS11
2-33F2A
MG25J1BS11
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mg150j
Abstract: TOSHIBA IGBT MG150J1BS11
Text: MG150J1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG150J1BS11 High Power Switching Applications Motor Control Applications Unit: mm l Enhancement-mode l The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33F2A Maximum Ratings Ta = 25°C
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Original
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MG150J1BS11
2-33F2A
mg150j
TOSHIBA IGBT
MG150J1BS11
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MG25Q1BS11
Abstract: No abstract text available
Text: MG25Q1BS11 TOSHIBA IGBT Module Silicon N - Channel IGBT MG25Q1BS11 High Power Switching Applications Motor Control Applications Unit: mm l Enhancement-mode l The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33D2A Maximum Ratings Ta = 25°C
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Original
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MG25Q1BS11
2-33D2A
MG25Q1BS11
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Untitled
Abstract: No abstract text available
Text: MG100J1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG100J1BS11 High Power Switching Applications Motor Control Applications Unit: mm l Enhancement-mode l The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33F2A Maximum Ratings Ta = 25°C
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Original
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MG100J1BS11
2-33F2A
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MG75Q1BS11
Abstract: No abstract text available
Text: MG75Q1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG75Q1BS11 High Power Switching Applications Motor Control Applications l Enhancement-mode l The electrodes are isolated from case. Unit: mm Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33D2A Maximum Ratings Ta = 25°C
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Original
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MG75Q1BS11
2-33D2A
MG75Q1BS11
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MG50J1BS11
Abstract: No abstract text available
Text: MG50J1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG50J1BS11 High Power Switching Applications Motor Control Applications Unit: mm l Enhancement-mode l The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33F2A Maximum Ratings Ta = 25°C
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Original
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MG50J1BS11
2-33F2A
MG50J1BS11
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PDF
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MG50Q1BS11
Abstract: TOSHIBA IGBT
Text: MG50Q1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG50Q1BS11 High Power Switching Applications Motor Control Applications l Enhancement-mode l The electrodes are isolated from case. Unit: mm Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33D2A Maximum Ratings Ta = 25°C
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Original
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MG50Q1BS11
2-33D2A
MG50Q1BS11
TOSHIBA IGBT
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MG1200FXF1US53
Abstract: 4500a Toshiba IGBT 1200A 3300V YG6260 transistor BA RW diode ba 124 ba ph 20v diode ba qu IGBT GTR IPM sage power switching 15v 1.2a
Text: MG1200FXF1US53 TOSHIBA Target Spec. TOSHIBA GTR MODULE MG1200FXF1US53 S ILICON N-CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Features ●High Input Impedance ●Enhancement Mode ●Electrodes are Isolated from Case EQUIVALENT CIRCUIT
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MG1200FXF1US53
25degC)
MG1200FXF1US53
4500a
Toshiba IGBT 1200A 3300V
YG6260
transistor BA RW
diode ba 124
ba ph 20v diode
ba qu
IGBT GTR IPM
sage power switching 15v 1.2a
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Untitled
Abstract: No abstract text available
Text: MG400V2YS60A TOSHIBA IGBT Module Silicon N Channel IGBT MG400V2YS60A High Power Switching Applications Motor Control Applications • The electrodes are isolated from case. • Enhancement−mode • Thermal output terminal TH Unit: mm Equivalent Circuit
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MG400V2YS60A
2-126A2A
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Untitled
Abstract: No abstract text available
Text: MG600Q2YS60A TOSHIBA IGBT Module Silicon N Channel IGBT MG600Q2YS60A High Power Switching Applications Motor Control Applications • The electrodes are isolated from case. • Enhancement−mode • Thermal output terminal TH Unit: mm Equivalent Circuit
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MG600Q2YS60A
2-126A2A
4300ments,
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MG400V2YS60A
Abstract: No abstract text available
Text: TOSHIBA MG400V2YS60A TOSHIBA IGBT MODULE SILICON N CHANNEL IGBT MG400V2 YS60A Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. Enhancement-Mode Thermal Output Terminal TH EQUIVALENT CIRCUIT
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OCR Scan
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MG400V2YS60A
2-126A1A
000707EAA1
MG400V2YS60A
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TOSHIBA IGBT
Abstract: MG100Q2YS65H "TOSHIBA IGBT module"
Text: TOSHIBA MG100Q2YS65H TENTATIVE TOSHIBA IGBT MODULE SILICON N Channel IGBT M G 1 0 0 Q2 Y S 6 5 H O HIGH POWER &HIGH SPEED SWITCHING APPUOATIONS •High Input impedance • Enhancem ent-M ode •The Electrodes are Isolated from Case. EQUIVALENT CIRCUIT El C io
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OCR Scan
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MG100Q2YS65H
CS23iC>
2-95A4
TOSHIBA IGBT
MG100Q2YS65H
"TOSHIBA IGBT module"
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PC 181 OPTO
Abstract: MG50N2YS1 16175 MU51
Text: TD TOSHIBA {DISCRETE/OPTO]- D e J IìGci72S0 DDlbl74 0 | 9097250 TOSHIBA <DISCRETE/OPTO TOSHIBA 90D 16174 SEMICONDUCTOR D TOSHIBA GTR MODULE MG50N2YS1 TECHNICAL DATA SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm
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OCR Scan
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ciGci72S0
DDlbl74
MG50N2YS1
EGA-MG50N2YS1-4
DT-33
MG50N2YS1
EGA-MG50N2YS1-
PC 181 OPTO
16175
MU51
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Untitled
Abstract: No abstract text available
Text: TOSHIBA { D I SC RE TE /OPT O} *TG 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA SEMICONDUCTOR dFI^CHTESO GDlbiao Q 90D 16120 D T - 33-/3 TOSHIBA GTR MODULE MG25H1BS1 TECHNICAL DATA SILICON N-CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.
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OCR Scan
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MG25H1BS1
25H1BS1-4
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Untitled
Abstract: No abstract text available
Text: TOSHIBA {DI SC RE TE /OPT O} * • dF 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA SEMICONDUCTOR I t o ^tssd 90D 16129 auibiai D t 7"-33~/3 TOSHIBA GTR MODULE MG50H1BS1 TECHNICAL DATA SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.
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OCR Scan
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MG50H1BS1
50HIBS1-A
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