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    Powerex Power Semiconductors MG150J7KS61

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    MG150J Datasheets (23)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MG150J1BS11 Toshiba N channel IGBT Original PDF
    MG150J1BS11 Toshiba N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS) Scan PDF
    MG150J1JS50 Toshiba Half Bridge IGBT Power Module Original PDF
    MG150J1JS50 Toshiba GTR Module Silicon N Channel IGBT Scan PDF
    MG150J1ZS50 Toshiba Independent IGBT Power Module Original PDF
    MG150J1ZS50 Toshiba TRANS IGBT MODULE N-CH 600V 150A 5(2-95A3A) Original PDF
    MG150J1ZS50 Toshiba GTR Module Silicon N Channel IGBT Scan PDF
    MG150J2YS1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG150J2YS1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG150J2YS11 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG150J2YS11 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG150J2YS2 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG150J2YS50 Toshiba N channel IGBT Original PDF
    MG150J2YS50 Toshiba TRANS IGBT MODULE N-CH 600V 150A 7(2-95A1A) Original PDF
    MG150J2YS50 Toshiba GTR Module Silicon N Channel IGBT Scan PDF
    MG150J2YS50 Toshiba N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS) Scan PDF
    MG150J7KS50 Toshiba Three-Phase Bridge IGBT Power Module Original PDF
    MG150J7KS50 Toshiba TRANS IGBT MODULE N-CH 600V 150A 16(2-110A1B) Original PDF
    MG150J7KS50 Toshiba GTR Module Silicon N Channel IGBT Scan PDF
    MG150J7KS60 Toshiba Silicon N Channel IGBT Original PDF

    MG150J Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MG150J2YS50

    Abstract: mg150j2y diode bridge toshiba MG150J2YS IGBT MG150J2YS50
    Text: MG150J2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150J2YS50 Unit: mm High Power Switching Applications Motor Control Applications The electrodes are isolated from case High input impedance Includes a complete half bridge in one package Enhancement-mode


    Original     		PDF MG150J2YS50 2-95A1A 000707EAA2 MG150J2YS50 mg150j2y diode bridge toshiba MG150J2YS IGBT MG150J2YS50

    MG150J1JS50

    Abstract: mg150j1
    Text: MG150J1JS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150J1JS50 High Power Switching Applications Motor Control Applications Unit: mm The electrodes are isolated from case. High input impedance Includes a complete half bridge in one package. Enhancement-mode


    Original     		PDF MG150J1JS50 2-95A2A MG150J1JS50 mg150j1

    Untitled

    Abstract: No abstract text available
    Text: MG150J7KS60 TOSHIBA GTR Module Silicon N Channel IGBT MG150J7KS60 600V/150A 7in1 High Power Switching Applications Motor Control Applications • Integrates inverter and brake power circuit into a single package • The electrodes are isolated from case.


    Original     		PDF MG150J7KS60 00V/150A 2-108G1B

    Untitled

    Abstract: No abstract text available
    Text: MG150J7KS60 TOSHIBA IGBT Module Silicon N Channel IGBT MG150J7KS60 600V/150A 7in1 High Power Switching Applications Motor Control Applications • Integrates inverter and brake power circuit into a single package • The electrodes are isolated from case.


    Original     		PDF MG150J7KS60 00V/150A 2003-1are

    MG150J7KS60

    Abstract: No abstract text available
    Text: MG150J7KS60 TOSHIBA IGBT Module Silicon N Channel IGBT MG150J7KS60 600V/150A 7in1 High Power Switching Applications Motor Control Applications • Integrates inverter and brake power circuit into a single package • The electrodes are isolated from case.


    Original     		PDF MG150J7KS60 00V/150A 2-108G1B MG150J7KS60

    mg150j2ys50

    Abstract: No abstract text available
    Text: MG150J2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150J2YS50 Unit: mm High Power Switching Applications Motor Control Applications l The electrodes are isolated from case l High input impedance l Includes a complete half bridge in one package l Enhancement-mode


    Original     		PDF MG150J2YS50 2-95A1A 000707EAA2 mg150j2ys50

    MG150J7KS50

    Abstract: No abstract text available
    Text: MG150J7KS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150J7KS50 High Power Switching Applications Motor Control Applications l The electrodes are isolated from case. l High input impedance l 7 IGBTs built into 1 package. l Enhancement-mode l High speed type IGBT :


    Original     		PDF MG150J7KS50 2-110A1B MG150J7KS50

    MG150J7KS60

    Abstract: No abstract text available
    Text: MG150J7KS60 TOSHIBA GTR Module Silicon N Channel IGBT MG150J7KS60 600V/150A 7in1 High Power Switching Applications Motor Control Applications • Integrates inverter and brake power circuit into a single package · The electrodes are isolated from case. ·


    Original     		PDF MG150J7KS60 00V/150A MG150J7KS60

    MG150J1ZS50

    Abstract: No abstract text available
    Text: MG150J1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150J1ZS50 High Power Switching Applications Motor Control Applications Unit: mm The electrodes are isolated from case. High input impedance Includes a complete half bridge in one package. Enhancement-mode


    Original     		PDF MG150J1ZS50 2-95A3A MG150J1ZS50

    ic 393

    Abstract: No abstract text available
    Text: TOSHIBA MG150J1JS50 MG1 50J1JS50 TO SH IBA GTR M O D ULE SILICON N CHANNEL IGBT HIGH P O W ER SWITCHING APPLICATIONS. U nit in mm M O TO R CONTROL APPLICATIONS. 2 - ¿5 .« ± 0 .3 The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One


    OCR Scan     		PDF MG150J1JS50 50J1JS50 30//s 15/iS ic 393

    MG150J2YS1

    Abstract: No abstract text available
    Text: GTR MODULE SILICON N CHANNEL IGBT MG150J2YS1 HIGH P OWER S W I T C H I N G APPLICATIONS. M O T O R C O N TROL APP LICATIONS. . High Input Impedance . High Speed : tf~0. 35jis Max. trr-O.25 m 5 (Max.) . Low Saturation Voltage : VcE(sat)=4.0V(Max.) . Enhancement-Mode


    OCR Scan     		PDF MG150J2YS1 35jis MG150J2YS1

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG150J7KS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 150J7KS50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • • • The Electrodes are Isolated from Case. High Input Impedance 7 IGBTs Built into 1 Package.


    OCR Scan     		PDF MG150J7KS50 150J7KS50 6o----12 16o----

    50J2Y

    Abstract: 50J2YS50
    Text: T O SH IB A MG150J2YS50 MG1 50J2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 2 - f S S A ± 0 .3 • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One


    OCR Scan     		PDF MG150J2YS50 50J2YS50 2-95A1A 50J2Y 50J2YS50

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA MG150J1BS11 M G 15 0 J 1 B S 1 1 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=1.0,«s Max. (Ie = 150A) Low Saturation Voltage : V q e (sat) = 2.7V (Max.) (Iq = 150A)


    OCR Scan     		PDF MG150J1BS11

    G150J2YS50

    Abstract: MG150J2YS50
    Text: MG150J2YS50 TOSHIBA TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG1 50J2YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. U nit in mm 2 - ^ 5.4 ± 0.3 The Electrodes are Isolated from Case. High Input Impedance Includes a Complete H alf Bridge in One


    OCR Scan     		PDF MG150J2YS50 G150J2YS50 G150J2YS50 MG150J2YS50

    MG150J1BS11

    Abstract: No abstract text available
    Text: TOSHIBA MG150J1BS11 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG150J1BS11 Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf^l.O/^s Max. (Iç; = 150A) Low Saturation Voltage : (sat) -2.7V (Max.) (Iç; = 150A)


    OCR Scan     		PDF MG150J1BS11 150J1B 2-33F1A MG150J1BS11

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG150J1ZS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M fn u n 11 7 ^ n HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The Electrodes are Isolated from Case. • High Input Impedance • Includes a Complete H alf Bridge in One Package.


    OCR Scan     		PDF MG150J1ZS50 00A///s 50tis 100//S*

    MG150J2YS50

    Abstract: 150J2YS50
    Text: TOSHIBA MG150J2YS50 T O SH IB A GTR M O D U L E SILICO N N C H A N N E L IGBT MG 150J2YS50 H IGH P O W E R S W IT C H IN G APPLIC ATIO N S. U nit in mm M O T O R C O N T R O L APPLIC ATIO N S. 2 - ^ 5 l< ± 0 .3 3-M5 The Electrodes are Isolated from Case.


    OCR Scan     		PDF MG150J2YS50 150J2YS50 15//s 2-95A1A G150J2YS50 MG150J2YS50 150J2YS50

    Untitled

    Abstract: No abstract text available
    Text: MG150J1ZS50 U nit in mm HIGH P O W E R SW ITC H IN G APPLICA TIO N S. M O T O R C O N T R O L A PPLICA TIO N S. 2-FAST-ON-TAB »110 • • The Electrodes are Isolated from Case. High Input Impedance • Enhancement-M ode High Speed : tf= 0.30/iS Max. (Iç = 150A)


    OCR Scan     		PDF MG150J1ZS50 30/iS 15//s

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG150J1ZS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG1 5 0 J 1 Z S 5 0 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. U nit in mm 2 -/6 .4 ± 0 .3 • The Electrodes are Isolated from Case. • High Input Impedance • Includes a Complete H alf Bridge in One


    OCR Scan     		PDF MG150J1ZS50

    Untitled

    Abstract: No abstract text available
    Text: MG150J2YS50 H IGH P O W ER SW ITC H IN G APPLICA TIO N S. U n it in m m M O T O R C O N T R O L A PPLICATIO N S. • T h e E le c tro d e s a r e Is o la te d from C a se. • H ig h I n p u t Im p e d a n c e • In c lu d e s a C o m p lete H a l f B rid g e in O ne


    OCR Scan     		PDF MG150J2YS50

    TRANSISTOR BJ 003

    Abstract: MG150J1JS50 60A4
    Text: TOSHIBA MG150J1JS50 MG1 50J1JS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 2 - 0 5 .4* 0.3 • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One


    OCR Scan     		PDF MG150J1JS50 150J1JS50 VCEVQE--10V TRANSISTOR BJ 003 MG150J1JS50 60A4

    qc diode

    Abstract: No abstract text available
    Text: TOSHIBA MG150J7KS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 1 5QJ7KS50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • The Electrodes are Isolated from Case. High Input Impedance 7 IGBTs Built into 1 Package. Enhancement-Mode


    OCR Scan     		PDF MG150J7KS50 5QJ7KS50 --24H qc diode

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG150J1BS11 TOSHIBA GTR MODULE m •v ■ SILICON N CHANNEL IGBT r; 1 ^ n 1 1 'w ■ v v ■ r nar <; 1 1 v ■ ■ HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=1.0^s Max. (Iç = i50A) Low Saturation Voltage ; V q e (sat) = 2,7V (Max,) (Iq = 150A)


    OCR Scan     		PDF MG150J1BS11