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    IGBT POWER LOSS Search Results

    IGBT POWER LOSS Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation

    IGBT POWER LOSS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ANIP9931E

    Abstract: Calculation of major IGBT operating parameters the calculation of the power dissipation for the IGBT IGBT JUNCTION TEMPERATURE CALCULATION calculation of the major IGBT operating calculation of IGBT parameter diode b2 SGP20N60
    Text: ANIP9931E Calculation of major IGBT operating parameters CALCULATION OF MAJOR IGBT OPERATING PARAMETERS This application note covers how to calculate major IGBT operating parameters - power dissipation; - continuous collector current; - total power losses;


    Original     		PDF ANIP9931E SGP20N60. SGP20N60 August-99 ANIP9931E Calculation of major IGBT operating parameters the calculation of the power dissipation for the IGBT IGBT JUNCTION TEMPERATURE CALCULATION calculation of the major IGBT operating calculation of IGBT parameter diode b2

    calculation of IGBT snubber

    Abstract: darlington pair MODULE 200A RC VOLTAGE CLAMP snubber circuit ipm darlington RCD snubber mitsubishi semiconductors power modules mos IGBT snubber mitsubishi semiconductors inverter power modules CM100DY-24H inverter circuit using IGBT module
    Text: MITSUBISHI SEMICONDUCTORS POWER MODULES MOS GENERAL CONSIDERATIONS FOR IGBT AND INTELLIGENT POWER MODULES 3.0 General Considerations for IGBT and Intelligent Power Modules H-Series IGBT and Intelligent Power Modules are based on advanced third generation IGBT and free-wheel


    Original     		PDF 00V/100A calculation of IGBT snubber darlington pair MODULE 200A RC VOLTAGE CLAMP snubber circuit ipm darlington RCD snubber mitsubishi semiconductors power modules mos IGBT snubber mitsubishi semiconductors inverter power modules CM100DY-24H inverter circuit using IGBT module

    DM2G100SH6N

    Abstract: dm2g100sh6 dawin
    Text: DM2G100SH6N May. 2009 High Power Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN’S IGBT module devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives


    Original     		PDF DM2G100SH6N Fig14. 100us DM2G100SH6N dm2g100sh6 dawin

    DL2G50SH6N

    Abstract: DIODE 10V 10mA DL2G50SH6N, IGBT Module,
    Text: DL2G50SH6N May. 2009 High Power Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN’S IGBT 6DM-2 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives


    Original     		PDF DL2G50SH6N Fig14. Fig15. DL2G50SH6N DIODE 10V 10mA DL2G50SH6N, IGBT Module,

    c125 diode

    Abstract: DM2G50SH6N
    Text: DM2G50SH6N May. 2009 High Power Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN’S IGBT module devices are optim ized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives


    Original     		PDF DM2G50SH6N Fig14. Fig15. c125 diode DM2G50SH6N

    DM2G300SH6N

    Abstract: DM2G300SH dm2g
    Text: DM2G300SH6N Aug. 2009 High Power Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN’S IGBT 7DM-3 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives


    Original     		PDF DM2G300SH6N Fig12. DM2G300SH6N DM2G300SH dm2g

    DM2G75SH6N

    Abstract: cvcf
    Text: DM2G75SH6N Aug. 2009 High Power Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN’S IGBT module devices are optim ized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives


    Original     		PDF DM2G75SH6N Fig14. DM2G75SH6N cvcf

    dawin

    Abstract: DM2G400SH6N 450w smps
    Text: DM2G400SH6N Aug. 2009 High Power Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN’S IGBT 7DM-3 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives


    Original     		PDF DM2G400SH6N Fig12. dawin DM2G400SH6N 450w smps

    DL2G75SH6N

    Abstract: dawin
    Text: DL2G75SH6N Aug. 2009 High Power Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN’S IGBT 6DM-2 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives


    Original     		PDF DL2G75SH6N Fig14. DL2G75SH6N dawin

    calculation of IGBT snubber

    Abstract: silicon thermal grease single phase igbt based inverter 200 amps circuit CM100DY-24H darlington pair MODULE 200A powerex snubber capacitor IGBT snubber shinetsu G746 PM600HSA120 IGBT JUNCTION TEMPERATURE CALCULATION
    Text: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 3.0 General Considerations for IGBT and Intelligent Power Modules Powerex IGBT and Intelligent Power Modules are based on advanced low loss IGBT and free-wheel diode technologies. The general


    Original     		PDF 00V/100A calculation of IGBT snubber silicon thermal grease single phase igbt based inverter 200 amps circuit CM100DY-24H darlington pair MODULE 200A powerex snubber capacitor IGBT snubber shinetsu G746 PM600HSA120 IGBT JUNCTION TEMPERATURE CALCULATION

    DL2G100SH6N

    Abstract: cvcf
    Text: DL2G100SH6N Aug. 2009 High Power Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN’S IGBT 6DM-2 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives


    Original     		PDF DL2G100SH6N Fig14. 100us DL2G100SH6N cvcf

    DM2G300SH12A

    Abstract: DM2G300SH 018E-01
    Text: DM2G300SH12A May. 2009 High Power SPT+ & Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN’S IGBT 7DM-3 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives


    Original     		PDF DM2G300SH12A DM2G300SH12A DM2G300SH 018E-01

    dm2g150sh12a

    Abstract: No abstract text available
    Text: DM2G150SH12A May. 2009 High Power SPT+ & Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN’S IGBT 7DM-3 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives


    Original     		PDF DM2G150SH12A dm2g150sh12a

    DM2G100SH12A

    Abstract: DM2G100
    Text: DM2G100SH12A May. 2009 High Power SPT+ & Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN’S IGBT 7DM-2 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives


    Original     		PDF DM2G100SH12A DM2G100SH12A DM2G100

    DM2G100SH12AE

    Abstract: DM2G100SH12A
    Text: DM2G100SH12AE May. 2009 High Power SPT+ & Rugged Type IGBT Module Equivalent Circuit and Package Description DAWIN’S IGBT 7DM-1 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives


    Original     		PDF DM2G100SH12AE Moto250 DM2G100SH12AE DM2G100SH12A

    dm2g100sh12al

    Abstract: DM2G100 dm2g100sh12a dm2g100sh
    Text: DM2G100SH12AL May. 2009 High Power SPT+ & Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN’S IGBT 7DM-3 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives


    Original     		PDF DM2G100SH12AL dm2g100sh12al DM2G100 dm2g100sh12a dm2g100sh

    MITSUBISHI CM400

    Abstract: MITSUBISHI CM300 H BRIDGE inverters circuit diagram using igbt NPN/transistor NEC K 2500 HALF BRIDGE NPN DARLINGTON POWER MODULE ups circuit diagram using igbt IGBT h-series application note CM30 igbt CM400 MITSUBISHI cm50-24h
    Text: MITSUBISHI SEMICONDUCTORS POWER MODULES MOS USING IGBT MODULES 4.0 Using IGBT Modules 4.1 Structure and Operation of IGBT Module Mitsubishi IGBT modules are designed to be rugged, low loss and easy to use. Use of advanced processing technologies gives low


    Original     		PDF 20kHz MITSUBISHI CM400 MITSUBISHI CM300 H BRIDGE inverters circuit diagram using igbt NPN/transistor NEC K 2500 HALF BRIDGE NPN DARLINGTON POWER MODULE ups circuit diagram using igbt IGBT h-series application note CM30 igbt CM400 MITSUBISHI cm50-24h

    dm2g200sh12a

    Abstract: No abstract text available
    Text: DM2G200SH12A May. 2009 High Power SPT+ & Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN’S IGBT 7DM-3 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives


    Original     		PDF DM2G200SH12A dm2g200sh12a

    Untitled

    Abstract: No abstract text available
    Text: MIG150J202H TOSHIBA Integrated IGBT Module Silicon N Channel IGBT MIG150J202H High Power Switching Applications Motor Control Applications l Integrates inverter, brake power circuits & control circuits IGBT drive units, protection units for over-current,


    Original     		PDF MIG150J202H 2-110A1A

    Tag 225-600

    Abstract: IGBT cross-reference SCR GTO fast diode 3000V tag 200-600 522.500. 5 x 20 mm HVDC plus scr phase control battery charger esm 30 450 v GTO thyristor Application notes
    Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half


    Original     		PDF DS5766-4. Tag 225-600 IGBT cross-reference SCR GTO fast diode 3000V tag 200-600 522.500. 5 x 20 mm HVDC plus scr phase control battery charger esm 30 450 v GTO thyristor Application notes

    DCR2950W

    Abstract: K1457 Tag 225-600 dim1200fss12 thyratron IGBT cross-reference DCR890F DSF110 igbt types 6000v DIM800DCS12-A
    Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half


    Original     		PDF DS5766-4. DCR2950W K1457 Tag 225-600 dim1200fss12 thyratron IGBT cross-reference DCR890F DSF110 igbt types 6000v DIM800DCS12-A

    Untitled

    Abstract: No abstract text available
    Text: APTGU180DU120 Dual common source PT IGBT Power Module VCES = 1200V IC = 180A @ Tc = 80°C Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • Power MOS 7 Punch Through PT IGBT - Low conduction loss


    Original     		PDF APTGU180DU120 50kHz reE-02

    MG400V2YS60A

    Abstract: MG600Q2YS60A MG800J2YS50A W1203 TOSHIBA
    Text: New Product Guide Compact-IGBT Series PRODUCT GUIDE Compact-IGBT Series Outline Equivalent Circuit Package Dimensions Toshiba have developed a low-loss high-power compact IGBT series whose devices are housed in compact packages. These devices are intended mainly for use in high-power inverters and servo amps. The


    Original     		PDF 2-126A1A MG400V2YS60A MG600Q2YS60A MG800J2YS50A W1203 TOSHIBA

    DCR2950W

    Abstract: igbt types 6000v igbt sinewave inverter thyristor phase control 600v to 1600v DCR2630Y Tag 225-600 PT85QWX45 HVDC plus bi-directional switches IGBT GTO hvdc thyristor
    Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half


    Original     		PDF DS5766-4. DCR2950W igbt types 6000v igbt sinewave inverter thyristor phase control 600v to 1600v DCR2630Y Tag 225-600 PT85QWX45 HVDC plus bi-directional switches IGBT GTO hvdc thyristor