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    MagnaChip Semiconductor Ltd DM2G50SH6N

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    c125 diode

    Abstract: DM2G50SH6N
    Text: DM2G50SH6N May. 2009 High Power Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN’S IGBT module devices are optim ized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives


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    PDF DM2G50SH6N Fig14. Fig15. c125 diode DM2G50SH6N