Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IGBT PARALLEL DIAGRAM Search Results

    IGBT PARALLEL DIAGRAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    IGBT PARALLEL DIAGRAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    APT0405

    Abstract: TRANZORB IGBT parallel DRIVE OSCILLATION GE215 g3 diode "ADVANCED POWER TECHNOLOGY EUROPE" SP6 CASE TO SINK SP6 CASE TO SINK THERMAL RESISTANCE "SP6 CASE TO SINK" THERMAL RESISTANCE capacitor RG
    Text: Application note APT0405 November 2004 Parallel Connection of IGBT and MOSFET Power Modules. Serge Bontemps Product Manager Advanced Power Technology Europe Chemin de Magret 33700 Merignac, France Introduction Several dice are usually connected in parallel within high current power modules.


    Original     		PDF APT0405 APT0405 TRANZORB IGBT parallel DRIVE OSCILLATION GE215 g3 diode "ADVANCED POWER TECHNOLOGY EUROPE" SP6 CASE TO SINK SP6 CASE TO SINK THERMAL RESISTANCE "SP6 CASE TO SINK" THERMAL RESISTANCE capacitor RG

    carrier wiring diagram

    Abstract: igbt wiring IGBT DRIVER SCHEMATIC IGBT parallel hitachi snubber capacitor igbt parallel diagram MBN800
    Text: April 1998 No.17 Hitachi Power Devices Technical Information PD Room This month we present you topics on connecting IGBT elements in parallel following up on the material last month. Last month, we discussed on the gate driver circuit used for driving elements in parallel and this month, we describe the main circuit wiring.


    Original     		PDF

    HGT1S12N60C3DR

    Abstract: HGT1S12N60C3DRS HGTG12N60C3DR HGTP12N60C3DR TB334 12N60C3 TO-262AA Package equivalent 44J1
    Text: HGTG12N60C3DR, HGTP12N60C3DR, HGT1S12N60C3DR, HGT1S12N60C3DRS 24A, 600V, Rugged, UFS Series N-Channel IGBT with Anti-Parallel Ultrafast Diode February 1998 Features Description • 24A, 600V at TC = 25oC This family of IGBTs was designed for optimum performance


    Original     		PDF HGTG12N60C3DR, HGTP12N60C3DR, HGT1S12N60C3DR, HGT1S12N60C3DRS 150oC 250ns HGT1S12N60C3DR HGT1S12N60C3DRS HGTG12N60C3DR HGTP12N60C3DR TB334 12N60C3 TO-262AA Package equivalent 44J1

    K20H603

    Abstract: No abstract text available
    Text: IGBT withsoft,fastrecoveryanti-paralleldiode IKP20N60H3 600Vhighspeedswitchingseriesthirdgeneration Datasheet IndustrialPowerControl IKP20N60H3 Highspeedswitchingseriesthirdgeneration


    Original     		PDF IKP20N60H3 K20H603

    K50H603

    Abstract: IKW50N60H3
    Text: IGBT withsoft,fastrecoveryanti-paralleldiode IKW50N60H3 600Vhighspeedswitchingseriesthirdgeneration Datasheet IndustrialPowerControl IKW50N60H3 Highspeedswitchingseriesthirdgeneration


    Original     		PDF IKW50N60H3 K50H603 IKW50N60H3

    K20H603

    Abstract: No abstract text available
    Text: IGBT withsoft,fastrecoveryanti-paralleldiode IKW20N60H3 600Vhighspeedswitchingseriesthirdgeneration Datasheet IndustrialPowerControl IKW20N60H3 Highspeedswitchingseriesthirdgeneration


    Original     		PDF IKW20N60H3 K20H603

    G3N60C3D

    Abstract: G3N60C3 HGT1S3N60C3D HGT1S3N60C3DS HGT1S3N60C3DS9A HGTP3N60C3D TA49119 G3N60
    Text: HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS Semiconductor 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes January 1997 Features Packaging JEDEC TO-220AB • 6A, 600V at TC = 25oC EMITTER COLLECTOR GATE • 600V Switching SOA Capability


    Original     		PDF HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS O-220AB 130ns 150oC O-262AA G3N60C3D G3N60C3 HGT1S3N60C3D HGT1S3N60C3DS HGT1S3N60C3DS9A HGTP3N60C3D TA49119 G3N60

    K20H603

    Abstract: No abstract text available
    Text: IGBT withsoft,fastrecoveryanti-paralleldiode IKB20N60H3 600Vhighspeedswitchingseriesthirdgeneration Datasheet IndustrialPowerControl IKB20N60H3 Highspeedswitchingseriesthirdgeneration


    Original     		PDF IKB20N60H3 K20H603

    K30H603

    Abstract: K30H60 IKW30N60H3
    Text: IGBT withsoft,fastrecoveryanti-paralleldiode IKW30N60H3 600Vhighspeedswitchingseriesthirdgeneration Datasheet IndustrialPowerControl IKW30N60H3 Highspeedswitchingseriesthirdgeneration


    Original     		PDF IKW30N60H3 K30H603 K30H60 IKW30N60H3

    dc welding machine circuit diagram

    Abstract: igbt for induction heating SM2G50US60
    Text: Preliminary SM2G50US60 IGBT MODULE FEATURES ' High Speed Switching ' Low Conduction Loss : VCE sat = 2.1 V (typ) ' Fast & Soft Anti-Parallel FWD ' Short circuit rated : Min 10uS at Tc=100 & APPLICATIONS ' ' ' ' ' Package code : 7-PM-AA General Purpose Inverters


    Original     		PDF SM2G50US60 dc welding machine circuit diagram igbt for induction heating SM2G50US60

    dc welding machine circuit diagram

    Abstract: SM2G200US60
    Text: Preliminary SM2G200US60 IGBT MODULE FEATURES ' High Speed Switching ' Low Conduction Loss : VCE sat = 2.1 V (typ) ' Fast & Soft Anti-Parallel FWD ' Short circuit rated : Min 10uS at Tc=100 & APPLICATIONS ' ' ' ' ' Package code : 7-PM-BA General Purpose Inverters


    Original     		PDF SM2G200US60 dc welding machine circuit diagram SM2G200US60

    dc welding machine circuit diagram

    Abstract: dc servo igbt diagram igbt 300V 10A datasheet igbt module inverter welding machine ups circuit diagram using igbt SM2G75US60
    Text: Preliminary SM2G75US60 IGBT MODULE FEATURES ' High Speed Switching ' Low Conduction Loss : VCE sat = 2.1 V (typ) ' Fast & Soft Anti-Parallel FWD ' Short circuit rated : Min 10uS at Tc=100 & APPLICATIONS ' ' ' ' ' Package code : 7-PM-AA General Purpose Inverters


    Original     		PDF SM2G75US60 dc welding machine circuit diagram dc servo igbt diagram igbt 300V 10A datasheet igbt module inverter welding machine ups circuit diagram using igbt SM2G75US60

    dc welding machine circuit diagram

    Abstract: induction heating ic SM2G400US60
    Text: Preliminary SM2G400US60 IGBT MODULE FEATURES ' High Speed Switching ' Low Conduction Loss : VCE sat = 2.1 V (typ) ' Fast & Soft Anti-Parallel FWD ' Short circuit rated : Min 10uS at Tc=100 & APPLICATIONS ' ' ' ' ' Package code : 7-PM-EA General Purpose Inverters


    Original     		PDF SM2G400US60 dc welding machine circuit diagram induction heating ic SM2G400US60

    dc welding machine circuit diagram

    Abstract: igbt for induction heating SM2G100US60
    Text: Preliminary SM2G100US60 IGBT MODULE FEATURES ' High Speed Switching ' Low Conduction Loss : VCE sat = 2.1 V (typ) ' Fast & Soft Anti-Parallel FWD ' Short circuit rated : Min 10uS at Tc=100 & APPLICATIONS ' ' ' ' ' Package code : 7-PM-AA General Purpose Inverters


    Original     		PDF SM2G100US60 dc welding machine circuit diagram igbt for induction heating SM2G100US60

    dc welding machine circuit diagram

    Abstract: SM2G300US60
    Text: Preliminary SM2G300US60 IGBT MODULE FEATURES ' High Speed Switching ' Low Conduction Loss : VCE sat = 2.1 V (typ) ' Fast & Soft Anti-Parallel FWD ' Short circuit rated : Min 10uS at Tc=100 & APPLICATIONS ' ' ' ' ' Package code : 7-PM-BA General Purpose Inverters


    Original     		PDF SM2G300US60 dc welding machine circuit diagram SM2G300US60

    dc welding machine circuit diagram

    Abstract: X2G75CD06P1
    Text: HIGH POWER PT TYPE 2-PACK IGBT MODULE X2G75CD06P1 • CIRCUIT DIAGRAM 600V 75A PACKAGE : M1 ■ APPLICATIONS ■ FEATURES • Punch Through g PT Technology gy • 10us short circuit capability • High speed switching • Industry standard package • Fast & Soft Anti-Parallel FWD


    Original     		PDF X2G75CD06P1 dc welding machine circuit diagram X2G75CD06P1

    X2G100CD06P1

    Abstract: Electric Welding Machine diagram diagram welding inverter dc to ac
    Text: HIGH POWER PT TYPE 2-PACK IGBT MODULE X2G100CD06P1 • CIRCUIT DIAGRAM 600V 100A PACKAGE : M1 ■ FEATURES ■ APPLICATIONS • Punch Through g PT Technology gy • 10us short circuit capability • High speed switching • Industry standard package • Fast & Soft Anti-Parallel FWD


    Original     		PDF X2G100CD06P1 X2G100CD06P1 Electric Welding Machine diagram diagram welding inverter dc to ac

    SMBH1G100US60

    Abstract: No abstract text available
    Text: Preliminary SMBH1G100US60 IGBT MODULE FEATURES ' High Speed Switching ' Low Conduction Loss : VCE sat = 2.1 V (typ) ' Fast & Soft Anti-Parallel FWD ' Short circuit rated : Min 10uS at Tc=100 & APPLICATIONS Package code : 7-PM-AA ' Buck(Step Down) Converter


    Original     		PDF SMBH1G100US60 SMBH1G100US60

    SMBL1G300US60

    Abstract: 300V dc dc boost converter IGBT gate drive for a boost converter
    Text: Preliminary SMBL1G300US60 IGBT MODULE FEATURES ' High Speed Switching ' Low Conduction Loss : VCE sat = 2.1 V (typ) ' Fast & Soft Anti-Parallel FWD ' Short circuit rated : Min 10uS at Tc=100 & APPLICATIONS Package code : 7-PM-BA ' Boost(Step Up) Converter


    Original     		PDF SMBL1G300US60 SMBL1G300US60 300V dc dc boost converter IGBT gate drive for a boost converter

    300V dc dc boost converter

    Abstract: SMBL1G75US60
    Text: Preliminary SMBL1G75US60 IGBT MODULE FEATURES ' High Speed Switching ' Low Conduction Loss : VCE sat = 2.1 V (typ) ' Fast & Soft Anti-Parallel FWD ' Short circuit rated : Min 10uS at Tc=100 & APPLICATIONS Package code : 7-PM-AA ' Boost(Step Up) Converter


    Original     		PDF SMBL1G75US60 300V dc dc boost converter SMBL1G75US60

    igbt module

    Abstract: SMBL1G150US60
    Text: Preliminary SMBL1G150US60 IGBT MODULE FEATURES ' High Speed Switching ' Low Conduction Loss : VCE sat = 2.1 V (typ) ' Fast & Soft Anti-Parallel FWD ' Short circuit rated : Min 10uS at Tc=100 & APPLICATIONS Package code : 7-PM-BA ' Boost(Step Up) Converter


    Original     		PDF SMBL1G150US60 igbt module SMBL1G150US60

    12N60D1D

    Abstract: 12n60d1
    Text: HGTG12N60D1D 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode Package Features • 12A,600V JE D E C S T Y LE TO -247 • Latch Free Operation • Typical Fall Time <500ns • Low Conduction Loss • With Anti-Parallel Diode • tRR < 60ns Description


    OCR Scan     		PDF HGTG12N60D1D 500ns 12N60D1D 12n60d1

    20n60b3d

    Abstract: G20N60B
    Text: HGTG20N60B3D 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Package Features • 40A, 600V at T c = +25°C JEDEC STYLE TO-247 • Typical Fall Time - 140ns at +150°C • Short Circuit Rated • Low Conduction Loss • Hyperfast Anti-Parallel Diode


    OCR Scan     		PDF HGTG20N60B3D 140ns O-247 HGTG20N60B3D RHRP3Q60. 20n60b3d G20N60B

    PJ 969 diode

    Abstract: G20N50c 20N50C1D pj 986 diode F25 transistor mosfet 20n GE 639 pj 809 IGBT 500V 35A igbt 20A 500V
    Text: HGTG20N50C1D M o r r is 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 20A ,500V JEDEC STYLE TO-247 • Latch Free Operation • Typical Fall Time < 500ns • High Input Im pedance • Low Conduction Loss • With Anti-Parallel Diode


    OCR Scan     		PDF 500ns HGTG20N50C1D O-247 AN7254 AN7260) PJ 969 diode G20N50c 20N50C1D pj 986 diode F25 transistor mosfet 20n GE 639 pj 809 IGBT 500V 35A igbt 20A 500V