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    IGBT K06T60 Search Results

    IGBT K06T60 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    IGBT K06T60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K06T60

    Abstract: No abstract text available
    Text: IKB06N60T p TrenchStop series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon 3 diode Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs


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    PDF IKB06N60T K06T60

    Untitled

    Abstract: No abstract text available
    Text: IKA06N60T TRENCHSTOP Series Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features • Very low VCE sat 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s


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    PDF IKA06N60T

    k06t60

    Abstract: igbt k06t60
    Text: IKA06N60T ^ TrenchStop series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Features • Very low VCE sat 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs


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    PDF IKA06N60T k06t60 igbt k06t60

    k06t60

    Abstract: igbt k06t60
    Text: IKA06N60T TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features • Very low VCE sat 1.5 V (typ.)  Maximum Junction Temperature 175 °C  Short circuit withstand time – 5s


    Original
    PDF IKA06N60T k06t60 igbt k06t60

    k06t60

    Abstract: igbt k06t60 IKA06N60T PG-TO220-3-31 Wr1c
    Text: IKA06N60T TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop ® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Features • Very low VCE sat 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs


    Original
    PDF IKA06N60T PG-TO-220-3-31 k06t60 igbt k06t60 IKA06N60T PG-TO220-3-31 Wr1c

    Untitled

    Abstract: No abstract text available
    Text: IKP06N60T p TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C


    Original
    PDF IKP06N60T

    k06t60

    Abstract: IKP06N60T
    Text: IKP06N60T p TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C


    Original
    PDF IKP06N60T k06t60

    Untitled

    Abstract: No abstract text available
    Text: IKA06N60T TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop ® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Features • Very low VCE sat 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs


    Original
    PDF IKA06N60T

    K06T60

    Abstract: igbt k06t60 IKP06N60T PG-TO-220-3-1 diode 400V 6A
    Text: IKP06N60T p TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C


    Original
    PDF IKP06N60T K06T60 igbt k06t60 IKP06N60T PG-TO-220-3-1 diode 400V 6A

    k06t60

    Abstract: igbt k06t60 diode 400V 4A fast recovery diode 2a trr 200ns IGBT DRIVE 500V 300A diode 400V 6A IKA06N60T PG-TO220-3-31 fast recovery diode 1a trr 200ns
    Text: IKA06N60T TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop ® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Features • Very low VCE sat 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs


    Original
    PDF IKA06N60T PG-TO-220-3-31 k06t60 igbt k06t60 diode 400V 4A fast recovery diode 2a trr 200ns IGBT DRIVE 500V 300A diode 400V 6A IKA06N60T PG-TO220-3-31 fast recovery diode 1a trr 200ns

    k06t60

    Abstract: igbt k06t60 diode 1309
    Text: IKB06N60T p TrenchStop series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C


    Original
    PDF IKB06N60T k06t60 igbt k06t60 diode 1309

    Untitled

    Abstract: No abstract text available
    Text: TRENCHSTOP Series IKB06N60T p Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features • Very low VCE sat 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s


    Original
    PDF IKB06N60T

    IKP06N60T

    Abstract: No abstract text available
    Text: IKP06N60T p TRENCHSTOP Series Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features • Very low VCE sat 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s


    Original
    PDF IKP06N60T IKP06N60T

    K06T60

    Abstract: No abstract text available
    Text: IKP06N60T p TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C •          Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C


    Original
    PDF IKP06N60T K06T60

    k06t60

    Abstract: marking code 8A IKA06N60T e3055 5304 marking code 5304 POWER SUPPLY IC ic 5304 1a pspice high frequency igbt
    Text: IKA06N60T ^ TrenchStop series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs


    Original
    PDF IKA06N60T Oct-04 k06t60 marking code 8A IKA06N60T e3055 5304 marking code 5304 POWER SUPPLY IC ic 5304 1a pspice high frequency igbt

    k06t60

    Abstract: igbt k06t60 diode 400V 6A IKB06N60T PG-TO-263-3-2
    Text: IKB06N60T p TrenchStop series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon 3 diode • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs


    Original
    PDF IKB06N60T k06t60 igbt k06t60 diode 400V 6A IKB06N60T PG-TO-263-3-2

    k06t60

    Abstract: IKB06N60T igbt k06t60
    Text: IKB06N60T p TrenchStop series ^ Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs


    Original
    PDF IKB06N60T k06t60 IKB06N60T igbt k06t60

    k06t60

    Abstract: igbt k06t60 600V 300A igbt dc to dc power supply Q67040S4679 IKP06N60T IKB06N60T datasheet ic 7822 pspice high frequency igbt diode 400V 6A marking diode 6a
    Text: IKB06N60T IKP06N60T TrenchStop series ^ Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs


    Original
    PDF IKB06N60T IKP06N60T P-TO-220-3-1 O-220AB) Oct-04 k06t60 igbt k06t60 600V 300A igbt dc to dc power supply Q67040S4679 IKP06N60T IKB06N60T datasheet ic 7822 pspice high frequency igbt diode 400V 6A marking diode 6a

    k06t60

    Abstract: igbt k06t60
    Text: IKA06N60T ^ TrenchStop series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs


    Original
    PDF IKA06N60T k06t60 igbt k06t60

    k06t60

    Abstract: fast recovery diode 1000v 10A diode 400V 6A diode 6a 400v IKP06N60T 6A, 100v fast recovery diode datasheet ic 7822 FAST RECOVERY DIODE 200ns PG-TO-220-3-1
    Text: IKP06N60T p TrenchStop series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs


    Original
    PDF IKP06N60T PG-TO-220-3-1 k06t60 fast recovery diode 1000v 10A diode 400V 6A diode 6a 400v IKP06N60T 6A, 100v fast recovery diode datasheet ic 7822 FAST RECOVERY DIODE 200ns PG-TO-220-3-1

    k06t60

    Abstract: igbt k06t60 IKP06N60T Q67040S4679
    Text: IKP06N60T p TrenchStop series ^ Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs


    Original
    PDF IKP06N60T PG-TO-220-3-1 O-220AB) k06t60 igbt k06t60 Q67040S4679