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    IGBT IN SMPS Search Results

    IGBT IN SMPS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    IGBT IN SMPS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    VS-GT105LA120UX

    Abstract: No abstract text available
    Text: 600/650 V and 1200 V, 50 A to 250 A IGBT Modules 600/650 V and 1200 V, up to 250 A IGBT Modules in SOT-227 Package High efficiency IGBT Modules featuring SOT-227 standard outline. A choice of PT, NPT and Trench IGBT technologies allows usage in switching frequencies from


    Original     		PDF OT-227 OT-227 VS-GT120DA65U VS-GT140DA60U VS-GA200SA60UP VS-GB55LA120UX VS-GP250SA60S VS-GB55NA120UX VS-GB75LA60UF VS-GB75NA60UF VS-GT105LA120UX

    Untitled

    Abstract: No abstract text available
    Text: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high operating frequencies 8 to 40 kHz in hard switching, > 200 kHz in resonant mode


    Original     		PDF GA200TS60UPbF 12-Mar-07

    GA400TD60U

    Abstract: No abstract text available
    Text: PD - 5.059B PRELIMINARY "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK GA400TD60U Ultra-FastTM Speed IGBT Features VCES = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode


    Original     		PDF GA400TD60U 25imeters GA400TD60U

    GA100TS120UPBF

    Abstract: No abstract text available
    Text: GA100TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high operating frequencies 8 to 40 kHz in hard switching, > 200 kHz in resonant mode


    Original     		PDF GA100TS120UPbF 12-Mar-07 GA100TS120UPBF

    GA100TS120UPBF

    Abstract: No abstract text available
    Text: GA100TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 IGBT technology • Ultrafast: optimized for high operating frequencies 8 to 40 kHz in hard switching, > 200 kHz in resonant mode


    Original     		PDF GA100TS120UPbF 12-Mar-07 GA100TS120UPBF

    Untitled

    Abstract: No abstract text available
    Text: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high operating frequencies 8 to 40 kHz in hard switching, > 200 kHz in resonant mode


    Original     		PDF GA200TS60UPbF 12-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: GA75TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 75 A FEATURES • Generation 4 IGBT technology • Ultrafast: optimized for high operating frequencies 8 to 40 kHz in hard switching, > 200 kHz in resonant mode RoHS


    Original     		PDF GA75TS120UPbF 12-Mar-07

    GA100TS120UPBF

    Abstract: No abstract text available
    Text: Preliminary Data Sheet I27243 12/06 GA100TS120UPbF "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features VCES = 1200V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode


    Original     		PDF I27243 GA100TS120UPbF GA100TS120UPBF

    Untitled

    Abstract: No abstract text available
    Text: GA75TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 75 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high operating frequencies 8 to 40 kHz in hard switching, > 200 kHz in resonant mode RoHS


    Original     		PDF GA75TS120UPbF 12-Mar-07

    GA400TD60U

    Abstract: No abstract text available
    Text: PD - 5.059B PRELIMINARY "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK GA400TD60U Ultra-FastTM Speed IGBT Feature Featuress VCES = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode


    Original     		PDF GA400TD60U GA400TD60U

    GA100TS120UPBF

    Abstract: No abstract text available
    Text: GA100TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 to 40 kHz in hard switching, > 200 kHz in resonant mode RoHS COMPLIANT


    Original     		PDF GA100TS120UPbF 18-Jul-08 GA100TS120UPBF

    GA100TS120UPBF

    Abstract: No abstract text available
    Text: GA100TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 to 40 kHz in hard switching, > 200 kHz in resonant mode RoHS COMPLIANT


    Original     		PDF GA100TS120UPbF 18-Jul-08 GA100TS120UPBF

    GA100TS120UPBF

    Abstract: No abstract text available
    Text: GA100TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK UltrafastTM Speed IGBT FEATURES • Generation 4 IGBT technology 3 • Ultrafast: optimized for high operating frequencies 8 to 40 kHz in hard switching, > 200 kHz in resonant mode 6 7


    Original     		PDF GA100TS120UPbF 12-Mar-07 GA100TS120UPBF

    GA100TS120U

    Abstract: No abstract text available
    Text: PD - 50060B GA100TS120U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF 50060B GA100TS120U T52-7105 GA100TS120U

    ge 142

    Abstract: lta 301 GA150TS60U
    Text: PD - 50056D GA150TS60U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF 50056D GA150TS60U ge 142 lta 301 GA150TS60U

    tc 317 c

    Abstract: 056B GA150TS60U
    Text: PD -5.056B PRELIMINARY "HALF-BRIDGE" IGBT INT-A-PAK GA150TS60U Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF GA150TS60U tc 317 c 056B GA150TS60U

    RG2 DIODE

    Abstract: GA125TS120U
    Text: PD - 5.053 PRELIMINARY GA125TS120U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF GA125TS120U RG2 DIODE GA125TS120U

    GA300TD60U

    Abstract: No abstract text available
    Text: PD -50057D GA300TD60U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF -50057D GA300TD60U GA300TD60U

    ic 5056 mv 85

    Abstract: GA150TS60U
    Text: PD -5.056 PRELIMINARY "HALF-BRIDGE" IGBT INT-A-PAK GA150TS60U Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF GA150TS60U ic 5056 mv 85 GA150TS60U

    GA500TD60U

    Abstract: No abstract text available
    Text: PD - 50048C GA500TD60U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF 50048C GA500TD60U GA500TD60U

    GA100TS120U

    Abstract: No abstract text available
    Text: PD - 5.060A PRELIMINARY GA100TS120U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF GA100TS120U GA100TS120U

    18672

    Abstract: 100TS120U
    Text: International IOSR Rectifier PD - 5.060A GA100TS120U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40kHz in hard switching, >200kHz in resonant mode


    OCR Scan     		PDF 8-40kHz 200kHz GA100TS120U A100TS120U 18672 100TS120U

    IQR 336

    Abstract: 5056B IOR 336
    Text: International IQR Rectifier "HALF-BRIDGE" IGBT INT-A-PAK PD - 5.056B GA150TS60U Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology VcES = 600V • UltraFast: Optimized for high operating frequencies 8-40kHz in hard switching, >200kHz in resonant mode


    OCR Scan     		PDF 8-40kHz 200kHz GA150TS60U A150TS60U IQR 336 5056B IOR 336

    100TS60U

    Abstract: 74c74 ETS-D
    Text: International IO R Rectifier "HALF-BRIDGE" IGBT INT-A-PAK PD - 5.055A GA100TS60U Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology VcES= 600V • UltraFast: Optimized for high operating frequencies 8-40kHz in hard switching, >200kHz in resonant mode


    OCR Scan     		PDF 8-40kHz 200kHz GA100TS60U 100TS60U 100TS60U 74c74 ETS-D