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    IGBT DRIVE 500V 300A Search Results

    IGBT DRIVE 500V 300A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CS-SATDRIVEX2-001 Amphenol Cables on Demand Amphenol CS-SATDRIVEX2-001 Serial ATA Extension Cable - SATA II Drive Extension Cable with Power (6.0 Gbps) 1m Datasheet
    CS-SATDRIVEX2-002 Amphenol Cables on Demand Amphenol CS-SATDRIVEX2-002 Serial ATA Extension Cable - SATA II Drive Extension Cable with Power (6.0 Gbps) 2m Datasheet
    CS-SATDRIVEX2-000.5 Amphenol Cables on Demand Amphenol CS-SATDRIVEX2-000.5 Serial ATA Extension Cable - SATA II Drive Extension Cable with Power (6.0 Gbps) 0.5m Datasheet
    XPN1300ANC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 30 A, 0.0133 Ω@10V, TSON Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation

    IGBT DRIVE 500V 300A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IGBT DRIVE 500V 300A

    Abstract: BJT 300A, 500V BJT Gate Drive circuit K.S. Terminals NATIONAL IGBT OF IGBT 300A 500V lgbt Drive Base BJT Switching Behaviour of IGBT Transistors
    Text: APPLICATION NOTE DRIVE CIRCUIT FOR INTEGRATION WITH IGBTS by C. Licitra, S. Musumeci, A. Raciti, A. Galluzzo, R. Letor, M. Melito ABSTRACT lGBT devices are increasingly used in power electronic equipment due their high power handling capability. The present paper deals with the problems


    Original     		PDF

    smps 1000W

    Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit
    Text: 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain


    Original     		des691 10F-A, smps 1000W 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit PDF

    P-Channel mosfet 400v to220

    Abstract: IGBT DRIVE 500V 300A 400V switching transistor 0,3A mosfet forklift Microwave Oven Inverter Control IC apec CT60AM-18B igbt 100a 150v ct60am Transistor Mosfet N-Ch 30V
    Text: APEC '99 Trench-Gate Technology for The Next Generation of MOS Power Devices IEEE, APEC Conference 1999 Eric R. Motto Sr. Application Engineer Powerex Inc. Youngwood PA USA APEC '99 Introduction 1. The Trench Gate Structure, Development History and Advantages


    Original     		CM600HA-5F CM450HA-5F CM350DU-5F CM200TU-5F CT60AM-18B P-Channel mosfet 400v to220 IGBT DRIVE 500V 300A 400V switching transistor 0,3A mosfet forklift Microwave Oven Inverter Control IC apec CT60AM-18B igbt 100a 150v ct60am Transistor Mosfet N-Ch 30V PDF

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original     		100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter PDF

    IGBT DRIVER SCHEMATIC 3 PHASE

    Abstract: IGBT DRIVE 500V 300A SPM2G48-60 SPM2G65-60 SPM2G75-60 SPM2G85-60 SPM4G48-60 SPM6G48-60 SPM6G50-60 SPM6G65-60
    Text: SPMXGXX-XX SENSITRON SEMICONDUCTOR STANDARD IGBT MODULES WITH GATE DRIVERS FEATURES: • High Power Density • Low Saturation Voltage V CE(SAT ) • Low Thermal Resistance (R θJC) INDUSTRIAL IGBT PRODUCT MAP IC (Amps) CONFIGURATION VECS (V) 25 50 100 HalfBridge


    Original     		SPM2G48-60 SPM2G65-60 SPM2G75-60 SPM2G85-60 SPM4G48-60 SPM6G48-60 SPM6G65-60 SPM6G50-60 IGBT DRIVER SCHEMATIC 3 PHASE IGBT DRIVE 500V 300A SPM2G48-60 SPM2G65-60 SPM2G75-60 SPM2G85-60 SPM4G48-60 SPM6G48-60 SPM6G65-60 PDF

    half bridge converter 2kw

    Abstract: 5kw 20khz diagram induction heating 66a hall sensor TLE4209A XMC4700 ISO26262 1ED020112f TLE7183QU TLE5009 btm7752
    Text: Efficient Semiconductor Solutions for Motor Control and Drives www.infineon.com/motorcontrol Contents Solutions for Motor Control and Drives 04 Low-Voltage Applications 06 High-Voltage Applications 08 Product Families 10 Microcontrollers 10 Low-Voltage Products


    Original     		PDF

    SCS205KG

    Abstract: SCS220KE2 SCS240KE2 SCS212AJ SCS230KE2 SCS210AJ
    Text: SiC Power Devices vol.3 The Industry's First Mass-Produced "Full SiC" Power Modules ROHM now offers SiC power devices featuring a number of characteristics, including: high breakdown voltage, low power consumption, and high-speed switching operation not provided by conventional silicon devices.


    Original     		000A-class) 56P6733E 1500SG SCS205KG SCS220KE2 SCS240KE2 SCS212AJ SCS230KE2 SCS210AJ PDF

    zener DIODE A112

    Abstract: DC Motor control IGBT FUJI ELECTRIC ipm 7mbp75ra120 IGBT DRIVE 500V 300A 7MBP50RA120 application note 7MBP50RA06001 overcurrent circuit protection shock fuji ipm calculation of IGBT snubber TLP521-1GR
    Text: FUJI POWER SEMICONDUCTORS IGBT-IPM R-SERIES APPLICATION MANUAL 1 REH983 CONTENTS Chapter 1 Features 1.1 IGBT-IPM Characteristics. 3 1.2 R-IPM Characteristics. 4


    Original     		REH983 zener DIODE A112 DC Motor control IGBT FUJI ELECTRIC ipm 7mbp75ra120 IGBT DRIVE 500V 300A 7MBP50RA120 application note 7MBP50RA06001 overcurrent circuit protection shock fuji ipm calculation of IGBT snubber TLP521-1GR PDF

    Snubber circuit Design

    Abstract: MG15G6EL1 MG20G6EL1 MG25N6EK1 160U2G43 equivalent MG300G1UL1 IGBT snubber for inductive load calculation of IGBT snubber MG400G1UL1 what is fast IGBT transistor
    Text: 1. Ratings of GTR module collector currents, voltage between terminals, power dissipation, junction temperature, storage temperature etc. o f transistors. These charac­ teristics are closely related each other and cannot be considered independently are further, very


    OCR Scan     		30U6P42 50U6P43 75U6P43 100U6P43 Snubber circuit Design MG15G6EL1 MG20G6EL1 MG25N6EK1 160U2G43 equivalent MG300G1UL1 IGBT snubber for inductive load calculation of IGBT snubber MG400G1UL1 what is fast IGBT transistor PDF

    3kw pfc

    Abstract: No abstract text available
    Text: DIO 3706 "Why Diodes" Discrete & Analog Flyer V11_- 04/06/2013 19:26 Page 1 DC-DC Why DIODES? Diodes Incorporated provides product designers with a broad range of Standard, Discrete, Logic and Analog IC semiconductor components that are renowned for their


    Original     		600mV 3kw pfc PDF

    concept igd 001

    Abstract: 2SD315ai igd001 2SD315A concept LDI 001 2SD315 igbt driver IGD 001 2sd315a LDI 001 AN9701
    Text: SCALE Driver Data Sheet 2SD315AI−25 Dual SCALE Driver 2SD315AI−25 for Halfbridge IGBTs up to 2500V Description The SCALE drivers from CONCEPT are based on a chip set that was developed specifically for the reliable driving and safe operation of IGBTs and power MOSFETs.


    Original     		2SD315AI-25 CH-2504 concept igd 001 2SD315ai igd001 2SD315A concept LDI 001 2SD315 igbt driver IGD 001 2sd315a LDI 001 AN9701 PDF

    50w ultrasonic generator 40khz

    Abstract: igbt welding machine scheme 40KHZ ULTRASONIC CLEANER driver CIRCUIT 600V 300A igbt dc to dc boost converter 48v to 230v inverters circuit diagram 3b0565 e-bike motor controller 5V 100w unipolar STEPPER MOTOR 500w inverter pcb board circuit diagram 48V 500w 3 phase BLDC motor controller
    Text: Efficient Semiconductor Solutions for Motor Control and Drives Applications ] www.infineon.com/motorcontrol] Contents Solutions for Motor Control and Drives 04 Low-Voltage Applications 06 High-Voltage Applications 08 Choosing the right Microcontroller 10


    Original     		98/2000/XP 6ED003L06 SPD04N50C3 IDT08S60 SPA15N60C3 ICE3B0565 XC886 XC878/XE164 XC800 XC878 50w ultrasonic generator 40khz igbt welding machine scheme 40KHZ ULTRASONIC CLEANER driver CIRCUIT 600V 300A igbt dc to dc boost converter 48v to 230v inverters circuit diagram 3b0565 e-bike motor controller 5V 100w unipolar STEPPER MOTOR 500w inverter pcb board circuit diagram 48V 500w 3 phase BLDC motor controller PDF

    Untitled

    Abstract: No abstract text available
    Text: IKA06N60T TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop ® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Features • Very low VCE sat 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs


    Original     		IKA06N60T PDF

    K06T60

    Abstract: No abstract text available
    Text: IKP06N60T p TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C •          Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C


    Original     		IKP06N60T K06T60 PDF

    k06t60

    Abstract: igbt k06t60 IKA06N60T PG-TO220-3-31 Wr1c
    Text: IKA06N60T TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop ® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Features • Very low VCE sat 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs


    Original     		IKA06N60T PG-TO-220-3-31 k06t60 igbt k06t60 IKA06N60T PG-TO220-3-31 Wr1c PDF

    Untitled

    Abstract: No abstract text available
    Text: IKA06N60T TRENCHSTOP Series Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features • Very low VCE sat 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s


    Original     		IKA06N60T PDF

    K10T60

    Abstract: IKP10N60T PG-TO-220-3-1 fast recovery diode 1000v 10A
    Text: IKP10N60T p TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C


    Original     		IKP10N60T K10T60 IKP10N60T PG-TO-220-3-1 fast recovery diode 1000v 10A PDF

    Untitled

    Abstract: No abstract text available
    Text: IKP06N60T p TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C


    Original     		IKP06N60T PDF

    k06t60

    Abstract: igbt k06t60
    Text: IKA06N60T ^ TrenchStop series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Features • Very low VCE sat 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs


    Original     		IKA06N60T k06t60 igbt k06t60 PDF

    Untitled

    Abstract: No abstract text available
    Text: IKA10N60T TRENCHSTOP Series Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features: • Very low VCE sat 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s


    Original     		IKA10N60T PDF

    k06t60

    Abstract: igbt k06t60
    Text: IKA06N60T TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features • Very low VCE sat 1.5 V (typ.)  Maximum Junction Temperature 175 °C  Short circuit withstand time – 5s


    Original     		IKA06N60T k06t60 igbt k06t60 PDF

    k10t60

    Abstract: diode 10a 400v fast recovery diode 600v 12A IKA10N60T fast recovery diode 1a trr 200ns 10A 600A DC diode IGBT DRIVE 50V 300A diode 400V 4A 600v 75a fast recovery diode 1000v 10A
    Text: IKA10N60T TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Features • Very low VCE sat 1.5 V (typ.) • Maximum Junction Temperature 175°C • Short circuit withstand time – 5µs


    Original     		IKA10N60T PG-TO-220-3-31 O-220 k10t60 diode 10a 400v fast recovery diode 600v 12A IKA10N60T fast recovery diode 1a trr 200ns 10A 600A DC diode IGBT DRIVE 50V 300A diode 400V 4A 600v 75a fast recovery diode 1000v 10A PDF

    k06t60

    Abstract: igbt k06t60 diode 400V 4A fast recovery diode 2a trr 200ns IGBT DRIVE 500V 300A diode 400V 6A IKA06N60T PG-TO220-3-31 fast recovery diode 1a trr 200ns
    Text: IKA06N60T TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop ® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Features • Very low VCE sat 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs


    Original     		IKA06N60T PG-TO-220-3-31 k06t60 igbt k06t60 diode 400V 4A fast recovery diode 2a trr 200ns IGBT DRIVE 500V 300A diode 400V 6A IKA06N60T PG-TO220-3-31 fast recovery diode 1a trr 200ns PDF

    k10t60

    Abstract: No abstract text available
    Text: IKA10N60T TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Features • Very low VCE sat 1.5 V (typ.) • Maximum Junction Temperature 175°C • Short circuit withstand time – 5µs


    Original     		IKA10N60T k10t60 PDF