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    IGBT 900V 80A Search Results

    IGBT 900V 80A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    IGBT 900V 80A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information IXYN80N90C3H1 900V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching VCES IC90 VCE sat tfi(typ) = = ≤ = 900V 70A 2.7V 86ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C


    Original     		PDF IXYN80N90C3H1 OT-227B, E153432 IF110

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXYH40N90C3D1 900V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 40A 2.5V 110ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C


    Original     		PDF IXYH40N90C3D1 IC110 110ns O-247 IF110

    40N90C3D1

    Abstract: No abstract text available
    Text: Advance Technical Information 900V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXYH40N90C3D1 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 40A 2.5V 110ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C


    Original     		PDF IC110 IXYH40N90C3D1 110ns O-247 IF110 40N90C3D1

    IXYH40N90C3D1

    Abstract: No abstract text available
    Text: Advance Technical Information IXYH40N90C3D1 900V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 40A 2.5V 110ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C


    Original     		PDF IXYH40N90C3D1 IC110 110ns O-247 IF110 062in. IXYH40N90C3D1

    40N90C3D1

    Abstract: No abstract text available
    Text: Advance Technical Information IXYH40N90C3 900V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 40A 2.5V 110ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ


    Original     		PDF IXYH40N90C3 IC110 110ns O-247 062in. 40N90C3D1

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXYH40N90C3 900V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 40A 2.5V 110ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ


    Original     		PDF IXYH40N90C3 IC110 110ns O-247 40N90C3D1

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information 900V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) IXYH40N90C3 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 40A 2.5V 110ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ


    Original     		PDF IC110 IXYH40N90C3 110ns O-247 40N90C3D1

    80n90

    Abstract: 80N90C3 IXYT80N90C3 IXYH80N90C3
    Text: Advance Technical Information IXYT80N90C3 IXYH80N90C3 900V XPTTM IGBTs GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 80A 2.7V 86ns TO-268 (IXYT) G E Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		PDF IXYT80N90C3 IXYH80N90C3 IC110 O-268 062in. O-247) O-268 O-247 80N90C3 80n90 IXYH80N90C3

    80n90

    Abstract: No abstract text available
    Text: Advance Technical Information 900V XPTTM IGBTs GenX3TM VCES IC110 VCE sat tfi(typ) IXYT80N90C3 IXYH80N90C3 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 80A 2.7V 86ns TO-268 (IXYT) G E Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		PDF IC110 IXYT80N90C3 IXYH80N90C3 O-268 80N90C3 80n90

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXYT80N90C3 IXYH80N90C3 XPTTM 900V IGBTs GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 80A 2.7V 86ns TO-268 (IXYT) G E Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		PDF IXYT80N90C3 IXYH80N90C3 IC110 O-268 80N90C3

    APT10035LLL

    Abstract: APT80GA90LD40 MIC4452
    Text: APT80GA90LD40 900V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT80GA90LD40 APT10035LLL APT80GA90LD40 MIC4452

    Untitled

    Abstract: No abstract text available
    Text: APT80GA90LD40 900V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT80GA90LD40 APT80GA90LD40 O-264

    Untitled

    Abstract: No abstract text available
    Text: APT80GA90LD40 900V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT80GA90LD40 O-264

    IGBT 900V 80A

    Abstract: APT40GP90B2DF2
    Text: TYPICAL PERFORMANCE CURVES APT40GP90B2DF2 APT40GP90B2DF2 900V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		PDF APT40GP90B2DF2 APT40GP90B2DF2 IGBT 900V 80A

    Untitled

    Abstract: No abstract text available
    Text: TYPICAL PERFORMANCE CURVES APT40GP90B APT40GP90B 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		PDF APT40GP90B O-247

    IGBT 900V 80A

    Abstract: 228F APT40GP90B T0-247
    Text: APT40GP90B TYPICAL PERFORMANCE CURVES APT40GP90B 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		PDF APT40GP90B O-247 IGBT 900V 80A 228F APT40GP90B T0-247

    pearson 411

    Abstract: ic 4560 APT80GA90LD40 APT10035LLL MIC4452 power Diode 20A
    Text: APT80GA90B2D40 APT80GA90LD40 900V APT80GA90B2D40 High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT80GA90B2D40 APT80GA90LD40 pearson 411 ic 4560 APT80GA90LD40 APT10035LLL MIC4452 power Diode 20A

    APT40GP90J

    Abstract: No abstract text available
    Text: APT40GP90J APT40GP90J TYPICAL PERFORMANCE CURVES 900V E E POWER MOS 7 IGBT C G The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		PDF APT40GP90J APT40GP90J

    APT10035LLL

    Abstract: APT46GA90JD40 MIC4452 max4170
    Text: APT46GA90JD40 900V High Speed PT IGBT E E POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 22 C G through leading technology silicon design and lifetime control processes. A reduced Eoff TO S VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT46GA90JD40 E145592 APT10035LLL APT46GA90JD40 MIC4452 max4170

    IGBT 900V 80A

    Abstract: 196F 20A 100 V ISOTOP Diode 20A 1,0V ISOTOP
    Text: APT40GP90JDF2 APT40GP90JDF2 TYPICAL PERFORMANCE CURVES 900V E E POWER MOS 7 IGBT C G The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		PDF APT40GP90JDF2 APT40GP90JDF2 IGBT 900V 80A 196F 20A 100 V ISOTOP Diode 20A 1,0V ISOTOP

    Untitled

    Abstract: No abstract text available
    Text: APT40GP90JDF2 APT40GP90JDF2 TYPICAL PERFORMANCE CURVES 900V E E POWER MOS 7 IGBT C G The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		PDF APT40GP90JDF2 APT40GP90JDF2

    Untitled

    Abstract: No abstract text available
    Text: APT46GA90JD40 900V High Speed PT IGBT E E POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 22 C G through leading technology silicon design and lifetime control processes. A reduced Eoff TO S VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT46GA90JD40 APT46GA90JD40 E145592

    Untitled

    Abstract: No abstract text available
    Text: APT46GA90JD40 900V High Speed PT IGBT E E POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 22 C G through leading technology silicon design and lifetime control processes. A reduced Eoff TO S VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT46GA90JD40 E145592 FEATURE12

    Ultrafast Recovery Rectifier Bridge

    Abstract: APT10035LLL APT46GA90JD40 MIC4452
    Text: APT46GA90JD40 900V High Speed PT IGBT E E POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 22 C G through leading technology silicon design and lifetime control processes. A reduced Eoff TO S VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT46GA90JD40 E145592 Ultrafast Recovery Rectifier Bridge APT10035LLL APT46GA90JD40 MIC4452