Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXYN80N90C3H1 900V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching VCES IC90 VCE sat tfi(typ) = = ≤ = 900V 70A 2.7V 86ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C
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IXYN80N90C3H1
OT-227B,
E153432
IF110
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXYH40N90C3D1 900V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 40A 2.5V 110ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C
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IXYH40N90C3D1
IC110
110ns
O-247
IF110
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40N90C3D1
Abstract: No abstract text available
Text: Advance Technical Information 900V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXYH40N90C3D1 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 40A 2.5V 110ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C
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IC110
IXYH40N90C3D1
110ns
O-247
IF110
40N90C3D1
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PDF
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IXYH40N90C3D1
Abstract: No abstract text available
Text: Advance Technical Information IXYH40N90C3D1 900V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 40A 2.5V 110ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C
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IXYH40N90C3D1
IC110
110ns
O-247
IF110
062in.
IXYH40N90C3D1
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PDF
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40N90C3D1
Abstract: No abstract text available
Text: Advance Technical Information IXYH40N90C3 900V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 40A 2.5V 110ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ
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IXYH40N90C3
IC110
110ns
O-247
062in.
40N90C3D1
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXYH40N90C3 900V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 40A 2.5V 110ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ
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IXYH40N90C3
IC110
110ns
O-247
40N90C3D1
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PDF
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information 900V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) IXYH40N90C3 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 40A 2.5V 110ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ
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IC110
IXYH40N90C3
110ns
O-247
40N90C3D1
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PDF
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80n90
Abstract: 80N90C3 IXYT80N90C3 IXYH80N90C3
Text: Advance Technical Information IXYT80N90C3 IXYH80N90C3 900V XPTTM IGBTs GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 80A 2.7V 86ns TO-268 (IXYT) G E Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IXYT80N90C3
IXYH80N90C3
IC110
O-268
062in.
O-247)
O-268
O-247
80N90C3
80n90
IXYH80N90C3
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PDF
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80n90
Abstract: No abstract text available
Text: Advance Technical Information 900V XPTTM IGBTs GenX3TM VCES IC110 VCE sat tfi(typ) IXYT80N90C3 IXYH80N90C3 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 80A 2.7V 86ns TO-268 (IXYT) G E Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IC110
IXYT80N90C3
IXYH80N90C3
O-268
80N90C3
80n90
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXYT80N90C3 IXYH80N90C3 XPTTM 900V IGBTs GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 80A 2.7V 86ns TO-268 (IXYT) G E Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IXYT80N90C3
IXYH80N90C3
IC110
O-268
80N90C3
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APT10035LLL
Abstract: APT80GA90LD40 MIC4452
Text: APT80GA90LD40 900V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT80GA90LD40
APT10035LLL
APT80GA90LD40
MIC4452
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Untitled
Abstract: No abstract text available
Text: APT80GA90LD40 900V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT80GA90LD40
APT80GA90LD40
O-264
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PDF
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Untitled
Abstract: No abstract text available
Text: APT80GA90LD40 900V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT80GA90LD40
O-264
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IGBT 900V 80A
Abstract: APT40GP90B2DF2
Text: TYPICAL PERFORMANCE CURVES APT40GP90B2DF2 APT40GP90B2DF2 900V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT40GP90B2DF2
APT40GP90B2DF2
IGBT 900V 80A
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Untitled
Abstract: No abstract text available
Text: TYPICAL PERFORMANCE CURVES APT40GP90B APT40GP90B 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT40GP90B
O-247
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IGBT 900V 80A
Abstract: 228F APT40GP90B T0-247
Text: APT40GP90B TYPICAL PERFORMANCE CURVES APT40GP90B 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT40GP90B
O-247
IGBT 900V 80A
228F
APT40GP90B
T0-247
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pearson 411
Abstract: ic 4560 APT80GA90LD40 APT10035LLL MIC4452 power Diode 20A
Text: APT80GA90B2D40 APT80GA90LD40 900V APT80GA90B2D40 High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT80GA90B2D40
APT80GA90LD40
pearson 411
ic 4560
APT80GA90LD40
APT10035LLL
MIC4452
power Diode 20A
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PDF
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APT40GP90J
Abstract: No abstract text available
Text: APT40GP90J APT40GP90J TYPICAL PERFORMANCE CURVES 900V E E POWER MOS 7 IGBT C G The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT40GP90J
APT40GP90J
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APT10035LLL
Abstract: APT46GA90JD40 MIC4452 max4170
Text: APT46GA90JD40 900V High Speed PT IGBT E E POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 22 C G through leading technology silicon design and lifetime control processes. A reduced Eoff TO S VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT46GA90JD40
E145592
APT10035LLL
APT46GA90JD40
MIC4452
max4170
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IGBT 900V 80A
Abstract: 196F 20A 100 V ISOTOP Diode 20A 1,0V ISOTOP
Text: APT40GP90JDF2 APT40GP90JDF2 TYPICAL PERFORMANCE CURVES 900V E E POWER MOS 7 IGBT C G The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT40GP90JDF2
APT40GP90JDF2
IGBT 900V 80A
196F
20A 100 V ISOTOP
Diode 20A 1,0V ISOTOP
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Untitled
Abstract: No abstract text available
Text: APT40GP90JDF2 APT40GP90JDF2 TYPICAL PERFORMANCE CURVES 900V E E POWER MOS 7 IGBT C G The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT40GP90JDF2
APT40GP90JDF2
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PDF
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Untitled
Abstract: No abstract text available
Text: APT46GA90JD40 900V High Speed PT IGBT E E POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 22 C G through leading technology silicon design and lifetime control processes. A reduced Eoff TO S VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT46GA90JD40
APT46GA90JD40
E145592
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PDF
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Untitled
Abstract: No abstract text available
Text: APT46GA90JD40 900V High Speed PT IGBT E E POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 22 C G through leading technology silicon design and lifetime control processes. A reduced Eoff TO S VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT46GA90JD40
E145592
FEATURE12
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Ultrafast Recovery Rectifier Bridge
Abstract: APT10035LLL APT46GA90JD40 MIC4452
Text: APT46GA90JD40 900V High Speed PT IGBT E E POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 22 C G through leading technology silicon design and lifetime control processes. A reduced Eoff TO S VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT46GA90JD40
E145592
Ultrafast Recovery Rectifier Bridge
APT10035LLL
APT46GA90JD40
MIC4452
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PDF
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