169800
Abstract: 12M6501
Text: Data Sheet, Doc. No. 5SYA 1698-00 12 08 5SMY 12M6501 IGBT-Die VCE = 6500 V IC = 31 A Ultra low loss IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: SIPOS Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage
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12M6501
CH-5600
169800
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Untitled
Abstract: No abstract text available
Text: MIO 600-65E11 IC80 = 600 A = 6500 V VCES VCE sat typ = 4.2 V IGBT Module Single switch Short Circuit SOA Capability Square RBSOA C' C C C 5 7 9 E E E 4 6 8 3 G 2 E' t 1 Features Conditions VCES VGE = 0 V Maximum Ratings 6500 V ± 20 V 600 A 1200 A 10 µs
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600-65E11
20110119a
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GT 1081
Abstract: MAS 10 RCD IGBT GT 1081 igbt 3 KA transistor GT 1081 T1791 rcd 103 35d56 DS30 GS11
Text: Click on outline no. IGBT and GCT - Freewheeling Diodes Type V DRM V D 1031 SH D 1331 SH D 1641 SX D 1181 SX D 1441 SX D 931 SH D 1131 SH *) 4500 4500 4500 6000 6000 6500 6500 estimate failure rate λ ~ 100 fit V(D)D *) I(FSM) ∫i2dt V(F)/I(FM) kV kA A²s
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Untitled
Abstract: No abstract text available
Text: MIO 600-65E11 Advanced Technical Information IC80 = 600 A = 6500 V VCES VCE sat typ. = 4.2 V IGBT Module Single switch Short Circuit SOA Capability Square RBSOA C' C C C 5 7 9 E E E 4 6 8 3 G 2 E' 1 Features IGBT Symbol Conditions VCES VGE = 0 V Maximum Ratings
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600-65E11
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kuka
Abstract: ECONOPACK
Text: kuka-2003-inhalt.qxd 17.04.2003 IGBT 10:33 Uhr Seite 6 SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 6 Overview IGBT’s 2500 V 3300 V 6500 V IHV P [kW] P. 17 1200 V 1600 V 1700 V IHM P. 15 600 V 62 mm 1200 V 1700 V P. 10 600 V 1200 V 1700 V
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kuka-2003-inhalt
kuka
ECONOPACK
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resistor 2200 ohm
Abstract: No abstract text available
Text: MIO 600-65E11 IC80 = 600 A = 6500 V VCES VCE sat typ = 4.2 V IGBT Module Single switch Short Circuit SOA Capability Square RBSOA C' C C C 5 7 9 E E E 4 6 8 3 G 2 E' 1 Features IGBT Symbol Conditions VCES VGE = 0 V Maximum Ratings VGES IC85 TC = 85°C ICM
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600-65E11
20110119a
resistor 2200 ohm
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g0547
Abstract: No abstract text available
Text: MIO 600-65E11 IC80 = 600 A = 6500 V VCES VCE sat typ = 4.2 V IGBT Module Single switch Short Circuit SOA Capability Square RBSOA C' C C C 5 7 9 E E E 4 6 8 3 G 2 E' 1 Features IGBT Symbol Conditions VCES VGE = 0 V Maximum Ratings VGES IC85 TC = 85°C ICM
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600-65E11
g0547
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PDF
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Untitled
Abstract: No abstract text available
Text: MIO 600-65E11 IC80 = 600 A VCES = 6500 V VCE sat typ = 4.2 V IGBT Module Single switch Short Circuit SOA Capability Square RBSOA C' C C C 5 7 9 E E E 4 6 8 3 G 2 E' 1 Features IGBT Symbol Conditions VCES VGE = 0 V Maximum Ratings VGES IC85 TC = 85°C ICM
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600-65E11
20110119a
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PDF
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Econo PIM
Abstract: a1020 Econo SCR 600 911 DIODE Igbt 1200 1200
Text: IGBT SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 4 Overview IGBT’s 2500 V 3300 V 6500 V IHV P [kW] P. 7-8 1200 V 1600 V 1700 V IHM P. 5-6 600 V 62 mm 1200 V 1700 V P. 9-11 600 V 1200 V 1700 V 34 mm P. 9-11 1200 V 1700 V Econo PACK+
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MOS Controlled Thyristor
Abstract: thyristor lifetime
Text: Static and Switching Characteristics of 6500 V Silicon Carbide Anode Switched Thyristor Modules Siddarth Sundaresan, Aye-Mya Soe, Ranbir Singh GeneSiC Semiconductor Inc. Dulles, VA 20152, USA Abstract— Silicon Carbide Anode Switched Thyristors ASTs overcome major limitations of conventional Si and SiC IGBT
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Untitled
Abstract: No abstract text available
Text: VCE IC = = 6500 V 600 A ABB HiPakTM IGBT Module 5SNA 0600G650100 Doc. No. 5SYA1558-04 01-2014 • Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC High insulation package AlSiC base-plate for high power cycling capability
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0600G650100
5SYA1558-04
CH-5600
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Untitled
Abstract: No abstract text available
Text: VCE IC = = 6500 V 600 A ABB HiPakTM IGBT Module 5SNA 0600G650100 Doc. No. 5SYA1558-02 Jan 06 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • High insulation package • AlSiC base-plate for high power cycling capability
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0600G650100
5SYA1558-02
CH-5600
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5SYA2039
Abstract: No abstract text available
Text: Data Sheet, Doc. No. 5SYA 1413-02 04-2012 5SNA 0500J650300 ABB HiPakTM IGBT Module VCE = 6500 V IC = 500 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC High insulation package AlSiC base-plate for high power cycling capability
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0500J650300
CH-5600
0500J650300|
5SYA2039
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Untitled
Abstract: No abstract text available
Text: Data Sheet, Doc. No. 5SYA 1413-02 04-2012 5SNA 0500J650300 HiPak IGBT Module VCE = 6500 V IC = 500 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC High insulation package AlSiC base-plate for high power cycling capability
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0500J650300
CH-5600
0500J650300|
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12M6501
Abstract: No abstract text available
Text: VCE IC = = 6500 V 25 A IGBT-Die 5SMX 12M6501 Die size: 13.6 x 13.6 mm Doc. No. 5SYA1627-03 11 11 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: SIPOS and Silicon Nitride plus Polyimide
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12M6501
5SYA1627-03
CH-5600
12M6501
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Untitled
Abstract: No abstract text available
Text: Data Sheet, Doc. No. 5SYA 1413-01 07-2011 5SNA 0500J650300 ABB HiPakTM IGBT Module VCE = 6500 V IC = 500 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC High insulation package AlSiC base-plate for high power cycling capability
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0500J650300
Condit20
CH-5600
0500J650300|
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PDF
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Untitled
Abstract: No abstract text available
Text: VCE IC = = 6500 V 750 A ABB HiPakTM IGBT Module 5SNA 0750G650300 Doc. No. 5SYA 1600-03 01-2014 • Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC High insulation package AlSiC base-plate for high power cycling
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0750G650300
UL1557,
E196689
CH-5600
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Untitled
Abstract: No abstract text available
Text: VCE IC = = 6500 V 400 A ABB HiPakTM IGBT Module 5SNA 0400J650100 Doc. No. 5SYA 1592-03 04-2012 • Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC High insulation package AlSiC base-plate for high power cycling capability
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0400J650100
UL1557,
E196689
CH-5600
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5SYA2042
Abstract: 5SNA0400J650100
Text: VCE IC = = 6500 V 400 A ABB HiPakTM IGBT Module 5SNA 0400J650100 Doc. No. 5SYA 1592-03 04-2012 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC High insulation package AlSiC base-plate for high power cycling capability AlN substrate for low thermal
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0400J650100
CH-5600
5SYA2042
5SNA0400J650100
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5SNA
Abstract: IGBT 6500 IC da 5SNA0750G650300
Text: VCE IC = = 6500 V 750 A ABB HiPakTM IGBT Module 5SNA 0750G650300 PRELIMINARY Doc. No. 5SYA 1600-00 Apr 08 • Ultra low-loss, rugged SPT+ chip-set • Smooth switching SPT+ chip-set for good EMC • High insulation package • AlSiC base-plate for high power
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0750G650300
CH-5600
5SNA
IGBT 6500
IC da
5SNA0750G650300
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5SNA0600G650100
Abstract: No abstract text available
Text: VCE IC = = 6500 V 600 A ABB HiPakTM IGBT Module 5SNA 0600G650100 Doc. No. 5SYA1558-03 04-2012 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC High insulation package AlSiC base-plate for high power cycling capability AlN substrate for low thermal
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0600G650100
5SYA1558-03
CH-5600
5SNA0600G650100
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5SNA0750G650300
Abstract: No abstract text available
Text: VCE IC = = 6500 V 750 A ABB HiPakTM IGBT Module 5SNA 0750G650300 Doc. No. 5SYA 1600-01 Feb 09 • Ultra low-loss, rugged SPT+ chip-set • Smooth switching SPT+ chip-set for good EMC • High insulation package • AlSiC base-plate for high power cycling capability
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0750G650300
CH-5600
5SNA0750G650300
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5SMX 12M6500
Abstract: 5SMX
Text: VCE IC = = 6500 V 25 A IGBT-Die 5SMX 12M6500 PRELIMINARY Die size: 13.6 x 13.6 mm Doc. No. 5SYA1627-00 Mrz.05 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: SIPOS and Silicon Nitride plus Polyimide
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12M6500
5SYA1627-00
CH-5600
5SMX 12M6500
5SMX
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PDF
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Untitled
Abstract: No abstract text available
Text: VCE IC = = 6500 V 750 A ABB HiPakTM IGBT Module 5SNA 0750G650300 Doc. No. 5SYA 1600-03 01-2014 • Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC High insulation package AlSiC base-plate for high power cycling capability
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0750G650300
CH-5600
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